• 전자공학회논문지A
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• 제32A권3호
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• pp.110-117
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• 1995

New formulas for the minimum noise figure and the optimum source impedance of microwave FETs are derived using the noise equivalent circuits obtained from the steady-state Nyquist theorem for multi-terminal semiconductor devices. The derived formulas manifest the relationships between the noise sources and the physical parameters of a noise equivalent circuit. Furthermore the formulas can explain the effect of gate leakage current on the minimum noise figure and the optimum source impedance. comparisons with the published experimental data confirm the validity and usability of our formula.

• Journal of Electrical Engineering and Technology
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• 제10권3호
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• pp.1169-1173
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• 2015

This paper presents vertical carbon nanotube (CNT) field effect transistors (FETs). For the first time, the author successfully fabricated vertical CNT-based FETs on an anodized aluminum oxide (AAO) template by using atomic layer deposition (ALD). Single walled CNTs were vertically grown and aligned with the vertical pores of an AAO template. By using ALD, a gate oxide material (Al₂O₃) and a gate metal (Au) were centrally located inside each pore, allowing the vertical CNTs grown in the pores to be individually gated. Characterizations of the gated/vertical CNTs were carried and the successful gate integration with the CNTs was confirmed.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2010년도 춘계학술발표대회
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• pp.17.2-17.2
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• 2010

Printed electronics is an emerging technology to realize various microelectronic devices via a cost-effective method. Here we demonstrated a high performance of p-channel and n-channel top-gate/bottom contact polymer field-effect transistors (FETs), and applications to elementary organic complementary inverter and ring oscillator circuits by inkjet processing. We could obtained high field-effect mobility more than $0.4\;cm^2/Vs$ for both of p-channel and n-channel FETs, and successfully measured inkjet-printed polymer inverters. The performance of devices highly depends on the selection of dielectrics, printing condition and device architecture. Optimized CMOS ring oscillators with p-type and n-type polymer transistors showed as high as 50 kHz operation frequency. This research was financially supported by development of next generation RFID technology for item level applications (2008-F052-01) funded by the ministry of knowledge economy (MKE).

• 한국재료학회:학술대회논문집
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• 한국재료학회 2012년도 춘계학술발표대회
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• pp.69.3-69.3
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• 2012

A high-performance low-voltage graphene field-effect transistor (FED array was fabricated on a flexible polymer substrate using solution-processable, high-capacitance ion gel gate dielectrics. The high capacitance of the ion gel, which originated from the formation of an electric double layer under the application of a gate voltage, yielded a high on-current and low voltage operation below 3 V. The graphene FETs fabricated on the plastic substrates showed a hole and electron mobility of 203 and 91 $cm^2/Vs$, respectively, at a drain bias of - I V. Moreover, ion gel gated graphene FETs on the plastic substrates exhibited remarkably good mechanical flexibility. This method represents a significant step in the application of graphene to flexible and stretchable electronics.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.1319-1321
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• 2009

Copper phthalocyanine (CuPc) Field-effect transistors (FETs) was successfully fabricated on plastic substrates. Orientation of CuPc crystallites on substrate could be obtained via rubbing process. It was revealed that CuPc crystallites were perpendicularly aligned on PES substrates with the rubbing direction. The performance of FETs was affected by orientation of CuPc on rubbed substrates.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1992년도 춘계학술대회 논문집
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• pp.86-90
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• 1992

We have studied the characteristics of n-and p-channel FETs with submicron channel length fabricated by twin-well process. Threshold voltage variation and potential distribution with channel ion implantation conditions and impurity profile of n-and p-channel region wee simulated using SUPREM-II and MINIMOS 4.0 simulater, P-channel FET had buried-channel in the depth of 0.15 $\mu\textrm{m}$ from surface by counter-doped boron ion implantation for threshold voltage adjustment. As a result of device measurement, we have obtained good drain saturation characteristics for 3.3 [V] opreation, minimized short channel effect with threshold voltage shift below 0.2[V], high punchthrough and breakdown voltage above 10[V] and low subthreshold value.

• Journal of Semiconductor Engineering
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• 제1권3호
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• pp.88-98
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• 2020

As biosensors are widely used in the medical field, flexible devices compatible with live animals have aroused great interest. Especially, significant research has been carried out to develop implantable or skin-attachable devices for real-time bio-signal sensing. From the device point of view, various biosensor types such as field-effect transistors (FETs) and multi-electrode arrays (MEAs) have been reported as diverse sensing strategies. In particular, the flexible FETs and MEAs allow semiconductor engineering to expand its application, which had been impossible with stiff devices and materials. This review summarizes the state-of-the-art research on flexible FET and MEA biosensors focusing on their materials, structures, sensing targets, and methods.

• 반도체디스플레이기술학회지
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• 제21권3호
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• pp.22-25
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• 2022

Metal oxide semiconductor (MOS) based on spray-pyrolysis deposition technique has attracted large attention due to simple and low-cost processibility while preserving their intrinsic optical and electrical characteristics. However, their high process temperature limits practical applications. Here, we demonstrated the nc-ZnO/ZnO field-effect transistors (FETs) via spray-pyrolysis as incorporating ZnO nanocrystalline nanoparticles into typical ZnO precursor. The nc-ZnO/ZnO FETs exhibit good quality of electrical properties. Our experiments reveal that nc-ZnO in active layer enhance electrical characteristics.

• 전자통신동향분석
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• 제38권1호
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• pp.36-45
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• 2023

The increasing demand for ultra-high efficiency of compact power conversion systems for electric vehicle applications has brought GaN power semiconductors to the fore due to their low conduction losses and fast switching speed. In particular, the development of materials and core device processes contributed to remarkable results regarding the publication of vertical GaN power devices with high breakdown voltage. This paper reviews recent advances on GaN material technology and vertical GaN power device technology. The GaN material technology covers the latest technological trends and GaN epitaxial growth technology, while the vertical GaN power device technology examines diodes, Trench FETs, JFETs, and FinFETs and reviews the vertical GaN PiN diode technology developed by ETRI.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2000년도 추계학술발표강연 및 논문개요집
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• pp.57-57
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• 2000