• 한국물환경학회지
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• 제28권5호
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• pp.762-767
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• 2012

The ecotoxicity assessment of nanomaterials (NMs) in the environment is actively conducted throughout the world because of the concerns about their potential risk from usage and release into the environment, as well as their unique physiochemical properties. Ecotoxicity tests for NMs have been conducted using various species and methods; however, in spite of these efforts, the characteristics and toxicity of NMs have not been defined. The fish embryo toxicity test (FET) has been conducted extensively to evaluate the toxicity of NMs as an alternative to a whole-body test in fish. In this study, we collected and analyzed the trends of nanotoxicity on the early development of freshwater fish. The model nanomaterials are carbon NMs ($C_{60},\;C_{70},\;C_{60}$(OH)n and carbon nanotube). Their adverse effects were extensively investigated based on the properties of NMs, test species, and diverse exposure conditions.

• 전기학회논문지
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• 제59권2호
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• pp.359-362
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• 2010

In this study, inverter logic circuits on a plastic substrate are built with two top-gate FETs in series on a single ZnO nanowire. The voltage transfer characteristics of the ZnO nanowire-based inverter logic circuit exhibit a clear inverting operation. The logic swing, gain and transition width of the inverter logic circuit is about 90 %, 1.03 and 1.2 V, respectively. The result of mechanical bending cycles of the inverter logic circuit on a plastic substrate shows that the stable performance is maintained even after many hundreds of bending cycles.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.315-317
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• 2009

We report the preparation of novel nanofiber organic semiconductors that can be utilized as the active channel materials in the field effect transistors (FETs). The nanofibers produced by the electrospinning reveals the excellent performances (mobility ~ 0.16 $cm^2$/V) due to thier highly ordered molecular packing in the polymer matrix.

• 대한전자공학회논문지
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• 제24권5호
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• pp.804-812
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• 1987

1\ulcorner gate MESFETs are fabricated on MOCVD and VPE grown GaAs wafers using photolithography, chemical wet etching and lift-off techniques. DC characteristics such as Vt, Gm, Rs, etc. are studied and active channel parameters of MESFET(a, n, Leff, \ulcorner)are analyzed for 1-4 \ulcorner gate FETs and 100\ulcorner FAT FET. The correlation between DC data and active channel parameters are experimentally analyzed. The measured transconductance and low-field mobility in the active channel for the 1\ulcorner gate MESFET made on MOCVD wafer are 67mS/mm and 2980cm\ulcornerVs respectively.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2000년도 ITC-CSCC -2
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• pp.1063-1066
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• 2000

ln this paper, a new active phase shifter is proposed using a vector sum method, and it is shown that the proposed phase shifter is more efficient than the others in size, power, number of circuits, and gain. Also a unique digital phase control method of the circuit is suggested. The proposed scheme was designed and implemented using a Wilkinson power combiner/divider, a branch line 3dB quadrature hybrid coupler and variable gain amplifiers (VGAs) using dual gate FETs (DGFETs). Furthermore, it is also shown that the proposed scheme is more efficient and works properly with the digital phase control method.

• 전자공학회논문지A
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• 제29A권3호
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• pp.33-40
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• 1992

In this paper, We designed a 2-stage amplifier for transponder of satellite with dual GaAs FETs NE13783, and performed the worst-case analysis for circuit qualification in the space environment. The bandwidth of amplifier was chosen 11.7-12.2 GHz which is the down link frequency band for domestic Ku-band satellite communication, and the alumina substrate with 25 mil of thickness. The design and optimization of amplifier was achieved by the commercial CAD program TOUCHSTONE and the measurement was performed through the automatic network analyzer.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1997년도 추계학술대회 논문집
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• pp.328-330
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• 1997

Organic semiconductors such as conjugated polymers and oligomers have been studied many research groups. The band structures of conjugated polymers and oligomers are similar to those of conventional inorganic semiconductors Thin films based on these materials show a promising potential for Field Effect Transistors(FETs) and Light Emitting Diodes(LED) because fabrication processes are simple and cheaper for large electronic devices and flexible devices are also possible.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2003년도 하계학술대회 논문집 B
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• pp.1235-1237
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• 2003

For small capacity rectifier circuits as these for consumer electronics and appli capacitor input type rectifier circuits are gen used. Consequently. various harmonics gen within the power system become a serious pro Various studies of this effect have been pres previously. However. most of these employ swit devices, such as FETs and the like. The absen switching devices makes systems more toleran over -load, and brings low radio noise benefits propose a power factor correction scheme using resonant in commercial frequency without swit devices. In this method. It makes a sinusoidal by widening conduction period using the cu resonance in commercial frequency. Hence, harmonic characteristics can be significantly imp where the lower order harmonics. such as the and seventh orders are much reduced. The resu confirmed by the theoretical and experm implementations.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.70-71
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• 2007

Analyzing pentacene field effect transistors (FETs) with Au source and drain electrodes as Maxwell-Wagner effect elements, electron and hole injection from the Au electrodes into the FET channel were examined using current-voltage (I-V), capacitance-voltage (C-V) and optical second harmonic generation (SHG) measurements. Based on these results, a mechanism of the hole and electron injection into pentacene from the Au electrodes and subsequently recombination mechanism with light-emitting in the pentacene layer are discussed, with taking into account the presence of trapped charges.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.145.1-145.1
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• 2013

A prerequisite for the development of graphene-based field effect transistors (FETs) is reliable control of the type and concentration of carriers in graphene. These parameters can be manipulated via the deposition of atoms, molecules, and polymers onto graphene as a result of charge transfer that takes place between the graphene and adsorbates. In this work, we demonstrate a unique and facile methodology for the homogenous and stable p-type doping of graphene by hybridization with ZnO thin films fabricated by MeV electron beam irradiation (MEBI) under ambient conditions. The formation of the ZnO/graphene hybrid nanostructure was attributed to MEBI-stimulated dissociation of zinc acetate dihydrate and a subsequent oxidation process. A ZnO thin film with an ultra-flat surface and uniform thickness was formed on graphene. We found that homogeneous and stable p-type doping was achieved by charge transfer from the graphene to the ZnO film.