• Journal of the Korean Ceramic Society
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• v.43 no.11 s.294
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• pp.743-745
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• 2006

The luminescence properties of $Sr_{1-x}Ba_xTiO_3:Pr$, Al red phosphor for Field Emission Displays (FEDs) have been investigated in powders prepared though solid-state reactions. $Sr_{1-x}Ba_xTiO_3:Pr$, Al red phosphors indicate a higher luminescent intensity, and have been found to have potential for field emission displays. The addition of Ba increased the luminescence intensity at 617 nm by up to 30%. Ba ions are effective in producing the energy transfers from host-to-activator in 4f-5d transitions.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.53 no.2
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• pp.62-66
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• 2004

This paper investigated the characteristics of a newly developed high density hollow cathode plasma (HCP) system and its application for the etching of silicon wafers. We used SF$_{6}$ and $O_2$ gases in the HCP dry etch process. Silicon etch rate of $0.5\mu\textrm{m}$/min was achieved with $SF_6$$O_2$plasma conditions having a total gas pressure of 50mTorr, and RF power of 100 W. This paper presents surface etching characteristics on a crystalline silicon wafer and large area cast type multicrystlline silicon wafer. The results of this experiment can be used for various display systems such as thin film growth and etching for TFT-LCDs, emitter tip formations for FEDs, and bright plasma discharge for PDP applications.s.

• Journal of Korean Vacuum Science & Technology
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• v.3 no.1
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• pp.90-94
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• 1999

Field Emission display (FEDs) require enhancement in both driving methods and process techniques to improve the display image quality. However, from the point of view of manufacturing, it is difficult to find methods and techniques to realize low cost manufacturing. New and simple color phosphor screen designs were suggested with non-crossed electrode lines and full color anode panels for small area displays were demonstrated. To avoid unwanted reaction with gases produced from phosphors in a high vacuum glass container, a very thin polyimide layer was coated on the phosphor screen. Moreover, to improve the display image quality, black matrix composed of inorganic materials was fabricated. This paper describes the performance and characteristics of the new full color anode panels.

• Journal of radiological science and technology
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• v.31 no.3
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• pp.287-292
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• 2008

Position information of radiation interactions in detection material is essential to reconstruct a radiation source image. With most position sensing techniques, the position information of a single interaction inside the detectors can be precisely obtained. Each interaction position of multi-scattering inside scintillators, however, can not be individually measured and only the average of the scattering positions can be obtained, which causes the uncertainty in the measured interaction position. In this paper, the position uncertainties due to the multi-scattering were calculated by Monte Carlo simulation. The simulation model was a 50 by 50 by 5 mm $LaCl_3$(Ce) scintillator(pixel size is 2 by 2 by 5mm) which was utilized for the dual collimation camera. The dual collimation camera uses the information from both photoelectric effect and Compton scattering, and therefore, position uncertainties for both partial and full energy deposition of radiation interactions are calculated. In the case of partial energy deposition(PED), the standard deviations of positions are less than $1{\sim}2mm$, which means the uncertainty caused by multi-scattering is not significant. Because the effect of the multi-scattering with PED is insignificant, the multi-scattering has little effect on the performance of Compton imaging of dual collimation camera. In the case of full energy deposition(FED), however, the standard deviation of the positions is about twice that of the pixel size of the 1stdetector, except for 122keV incident radiations. Therefore, the standard deviations caused by multi-scatterings should be considered in the design of the coded mask of the dual collimation camera to avoid artifact on the reconstructed image. The position uncertainties of the FEDs are much larger than those of the PEDs for all radiation energies and the ratio of PEDs to FEDs increases when the incident radiation energy increases. The position uncertainties of both PEDs and FEDs are dependent on the incident radiation energy.

• Journal of Information Display
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• v.7 no.2
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• pp.16-21
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• 2006

The effect of improvement on the surface morphology of screen-printed carbon nanotube (CND) films was studied by using the optically clear poly-dimethylsiloxane (PDMS) elastomer for surface treatment. After the PDMS activation treatment was applied to the diode-type CNT cathode, the entangled carbon nanotube (CNT) bundles were broken up into individual free standing nanotubes to remarkably improve the field-emission characteristics over the as-deposited CNT film. Also, the cathode film morphology of a top gated triode-type structure can be treated by using the proposed surface treatment technique, which is a low-cost process, simple process. The relative uniform emission image showed high brightness with a high anode current. This result shows the possibility of using this technique for surface treatment of large-size field emission displays (FEDs) in the future.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1459-1461
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• 2005

Carbon nanotube -copper composite structures were fabricated using composite plating method and their field emission characteristics were investigated. Multi-walled carbon nanotubes synthesized by chemical vapor deposition were used in the present study. It was revealed that turn-on field of the structures was about 3.0 $V/{\mu}m$ at the current density of 0.1 ${\mu}A/cm^2$. We observed relatively uniform emission characteristics as well as stable emission currents. CNT-Cu composite plating method is efficient and it has no intrinsic limit on the plating area. Moreover, it gives strong adhesion between emitters and an electrode. The refore, we expect that CNT-Cu composite plating method can be applied to fabricate electron field emitters for large area FEDs and large area vacuum lighting sources.

• Biomedical Science Letters
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• v.7 no.1
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• pp.47-51
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• 2001

To investigate an effect of the topical toluene application to .at skin on the liver injury, toluene (35 mg/$cm^2$) was sequentially applied for 3 or 5 days to rat skin and then the animals were sacrificed. 5 day toluene-treated rats showed the slight increase of live. weight per body weight(%) compared with control. Serum levels of xanthine oxidase and alanine aminotransferase activity were significantly increased both in 3 days and 5 days toluene-treated animals compared with control. In the histopathological findings, cytoplasmic degeneration of hepatocytes around the central vein was noted in the liver of rats applied with toluene to the skin. These results indicate toluene application to rat skin feds to somewhat slight liver injury. On the other hand, the hepatic benzylalcohol or aldehyde dehydrogenase activities were significantly decreased by toluene application to rat skin. In conclusion, the liver min was induced by toluene application to rat skin, and it can be hypothesized that accumulation of benzaldehyde in liver cell may be responsible for liver injury.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.12S
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• pp.1248-1254
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• 2003

Carbon nanotubes(CNTs) are grown by using Co catalyst metal. CNTs fabricated by PECVD(plasma enhanced chemical vapor deposition) method are studied in terms of surface reaction and surface structure by TEM and Raman analysing method and ate analysed in its electrical field emission characteristics with variation of space between anode and cathode. Acetylene(C$_2$H$_2$) gas is used as the carbon source, while ammonia and hydrogen gas are used as catalyst and dilution gas. The CNTs grown by hydrogen(H$_2$) gas plasma indicates better vortical alignment, lower temperature process, and longer tip, compared to that grown by ammonia(NH$_3$) gas plasma. The CNTs fabricated with Co(cobalt) catalyst metal and PECVD method show the multiwall structure in mid-circle type in tip-end and the inner vacancy of 10nm. Emission properties of CNTs indicate the turn-on field to be 2.6 V/${\mu}{\textrm}{m}$ We suggest that CNTs can be possibly applied to the emitter tip of FEDs and high brightness flat lamp because of low temperature CNTs growth, low turn-on field.

• Bulletin of the Korean Chemical Society
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• v.29 no.4
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• pp.822-826
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• 2008

We report the cathodoluminescence and aging properties of a series of green phosphors of formula $Sr_{1-x}M_xGa_2S_4$:Eu (x = 0.0-1.0, M = Ba or Ca) that have potential applications in field emission displays (FEDs). The series of phosphors was synthesized via NaBr-aided solid-state reactions in a flowing $H_2S$ stream. A low level ($\sim$20%) of Ba or Ca substitution for Sr in $SrGa_2S_4$:Eu maintains the orthorhombic phase of pure $SrGa_2S_4$:Eu phosphors. Further, a low level ($\sim$20%) of Ba or Ca substitution for Sr in $SrGa_2S_4$:Eu provides various green colors and sufficient brightness for FED applications. Substitution of Ba or Ca for Sr in $SrGa_2S_4$:Eu also improved the stability of the phosphor when it was operated under electron-beam irradiation of 5 kV.

• Journal of Information Display
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• v.2 no.4
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• pp.1-7
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• 2001

This paper investigates the characteristics of a newly developed high density hollow cathode plasma(HCP) system and its application for the etching of silicon wafers. We used $SF_6$ and $O_2$ gases in the HCP dry etch process. This paper demonstrates very high plasma density of $2{\times}10^{12}cm^{-3}$ at a discharge current of 20 rna, Silicon etch rate of 1.3 ${\mu}m$/min was achieved with $SF_6/O_2$ plasma conditions of total gas pressure of 50 mTorr, gas flow rate of 40 seem, and RF power of200W. This paper presents surface etching characteristics on a crystalline silicon wafer and large area cast type multicrystlline silicon wafer. We obtained field emitter tips size of less than 0.1 ${\mu}m$ without any photomask step as well as with a conventional photolithography. Our experimental results can be applied to various display systems such as thin film growth and etching for TFT-LCDs, emitter tip formations for FEDs, and bright plasma discharge for PDP applications. In this research, we studied silicon etching properties by using the hollow cathode plasma system.