• 대한기계학회:학술대회논문집
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• 대한기계학회 2004년도 춘계학술대회
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• pp.1915-1920
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• 2004

An edge tone is the discrete tone or narrow-band sound produced by an oscillating free shear layer impinging on a rigid surface. In this paper we present a two-dimensional edge tone to predict the frequency characteristics of the discrete oscillations of a jet-edge feedback cycle by the finite difference lattice Boltzmann method. We use a new lattice BGK compressible fluid model that has an additional term and allow larger time increment comparing a conventional FDLB model, and also use a boundary fitted coordinates. The jet is chosen long enough in order to guarantee the parabolic velocity profile of the jet at the outlet, and the edge consists of a wedge with an angle of ${\alpha}=23^{\circ}$ . At a stand-off distance ${\omega}$ , the edge is inserted along the centreline of the jet, and a sinuous instability wave with real frequency f is assumed to be created in the vicinity of the nozzle and to propagate towards the downstream. We have succeeded in capturing very small pressure fluctuations result from periodically oscillation of jet around the edge. That pressure fluctuations propagate with the sound speed. Its interaction with the wedge produces an irrotational feedback field which, near the nozzle exit, is a periodic transverse flow producing the singularities at the nozzle lips.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1999년도 하계학술대회 논문집 D
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• pp.1514-1516
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• 1999

This paper covers our efforts to improve the low carrier mobility and light instability of hydrogenated amorphous silicon (a-Si:H) films with microcrystalline silicon $({\mu}c-Si)$ films. We successfully prepared ${\mu}c-Si$ films on $CaF_2$/glass substrate by decomposition of $SiH_4$ in RPCVD system. The $CaF_2$ films on glass served as a seed layer for ${\mu}c-Si$ film growth. The XRD analysis on $CaF_2$/glass illustrated a (111) preferred $CaF_2$ grains with the lattice mismatch less than 5 % of Si. We achieved ${\mu}c-Si$ films with a crystalline volume fraction of 61 %, (111) and (220) crystal orientations. grain size of $706\AA$, activation energy of 0.49 eV, and Photo/dark conductivity ratio of 124. By using a $CaF_2$/glass structure. we were able to achieve an improved ${\mu}c-Si$ films at a low substrate temperature of $300^{\circ}C$.

• 한국수학교육학회지시리즈B:순수및응용수학
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• 제11권1호
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• pp.29-36
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• 2004

Given vectors x and ｙ in a Hilbert space, an interpolating operator is a bounded operator T such that Tx=y. In this paper the following is proved: Let $\cal{L}$ be a subspace lattice on a Hilbert space $\cal{H}$. Let x and ｙ be vectors in $\cal{H}$ and let $P_x$, be the projection onto sp(x). If $P_xE=EP_x$ for each $ E \in \cal{L}$ then the following are equivalent. (1) There exists an operator A in Alg(equation omitted) such that Ax=y, Af = 0 for all f in ($sp(x)^\perp$) and $A=-A^\ast$. (2) (equation omitted)

• 한국전산유체공학회:학술대회논문집
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• 한국전산유체공학회 2003년도 The Fifth Asian Computational Fluid Dynamics Conference
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• pp.118-120
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• 2003

The behavior of viscous fingerings caused by an external force is investigated by using a two­phase lattice Boltzmann method. The effects of the modified capillary number, the viscosity contrast, and the modified Darcy-Rayleigh number on the instability of interfaces are found. The calculated wave numbers are in good agreement with the theoretical ones in the range of wave numbers smaller than 10, but the calculated ones tend to become smaller than the theoretical ones in higher wave numbers.

• Journal of applied mathematics & informatics
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• 제32권3_4호
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• pp.441-446
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• 2014

In this paper the following is proved: Let $\mathcal{L}$ be a subspace lattice on a Hilbert space $\mathcal{H}$ and X and Y be operators acting on $\mathcal{H}$. Then there exists a compact operator A in $Alg\mathcal{L}$ such that AX = Y if and only if ${\sup}\{\frac{{\parallel}E^{\perp}Yf{\parallel}}{{\parallel}E^{\perp}Xf{\parallel}}\;:\;f{\in}\mathcal{H},\;E{\in}\mathcal{L}\}$ = K < ${\infty}$ and Y is compact. Moreover, if the necessary condition holds, then we may choose an operator A such that AX = Y and ${\parallel}A{\parallel}=K$.

• 한국결정성장학회지
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• 제22권2호
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• pp.73-77
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• 2012

스컬용융법으로 큐빅지르코니아(YSZ) 단결정들($ZrO_2$: $Y_2O_3$= 80 : 20, 70 : 30, 60 : 40, 50 : 50 wt%, $Co_3O_4$: 0.8wt%, $CeO_2$: 0.4wt%)을 성장시켜 $N_2$ 분위기 $1000^{\circ}C$에서 5시간 동안 열처리 하였다. 오랜지색, 황갈색 또는 갈색의 단결정들은 각각 갈적색, 황색 또는 녹색으로 변화되었다. 열처리 전 후의 YSZ 단결정들은 직경 6.5, 두께 2 mm의 웨이퍼로 연마 하였다. 각 시편의 광학적 또는 구조적 특성은 UV-VIS 분광광도계와 XRD(X-ray diffraction)로 분석하였으며, $Ce^{3+}(^2F_{5/2,7/2}(4f){\rightarrow}^2T_g(5d^1))$, $Co^{2+}(^4A_2(^4F){\rightarrow}^4T_1(^4F)$ 또는 $^4T_1(^4P))$ 및 $Co^{3+}$에 의한 흡수, 이온화에너지 및 격자상수 변화를 확인하였다.

• 마이크로전자및패키징학회지
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• 제30권3호
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• pp.94-101
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• 2023

투명 전도성 산화물(TCO)를 대체할 수 있는 대표적인 물질로 알려진 ZnO는 3.37 eV의 bandgap과 60 meV의 exciton binding energy를 가진 반도체 물질이다. 본 연구에서는 투명 전극으로 사용하기 위한 높은 전기적 특성을 확보하기 위해 원자층 증착법을 기반으로 양이온과 음이온의 단일 및 이중 도핑에 따라 성장한 ZnO 박막을 제작하였다. 3가 양이온 Al, Ga과 음이온 F이 단일 및 이중 도핑된 ZnO 박막의 구조적, 광학적 특성 및 전기적 특성을 확인하였다. 단일 도핑의 경우, ZnO에 donor로 작용하는 Al, Ga, F에 의해 캐리어 농도가 도핑 전에 비해 증가하였고 근자외선 영역에서의 band-edge absorption이 증가하는 것을 확인하였다. 단일 도핑 중에서는 F이 ZnO 내 산소 공공 자리에 passivation 되면서 높은 mobility와 함께 가장 높은 전도도를 보였다. 이중 도핑의 경우, 각 원소들의 도핑 효과가 더해지면서 단일 도핑에 비해 높은 전기적 특성을 보였다. 결과적으로 Ga-F에 비해 Al-F 도핑 시 ionic radius 차이에 의한 lattice distortion 감소 및 delocalized 된 전자 상태의 증가로 가장 낮은 비저항 값을 보였으며 PDOS 분석을 통한 시뮬레이션 데이터로 측정 값과 일치하는 결과를 확인했다.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제52권10호
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• pp.447-450
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• 2003

This paper presents a process optimization of antireflection (AR) coating on crystalline Si solar cells. Theoretical and experimental investigations were performed on a double-layer AR (DLAR) coating of MgF$_2$/CeO$_2$. We investigated CeO$_2$ films as an AR layer because they have a proper refractive index of 2.46 and demonstrate the same lattice constant as Si substrate. RF sputter grown CeO$_2$ film showed strong dependence on a deposition temperature. The CeO$_2$ deposited at 40$0^{\circ}C$ exhibited a strong (111) preferred orientation and the lowest surface roughness of 6.87 $\AA$. Refractive index of MgF$_2$ film was measured as 1.386 for the most of growth temperature. An optimized DLAR coating showed a reflectance as low as 2.04% in the wavelengths ranged from 0.4${\mu}{\textrm}{m}$ to 1.1${\mu}{\textrm}{m}$. We achieved the efficiencies of solar cells greater than 15% with 3.12% improvement with DLAR coatings. Further details on MgF$_2$, CeO$_2$ films, and cell fabrication parameters are presented in this paper.

• 대한화학회지
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• 제38권9호
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• pp.628-631
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• 1994

펄스 핵자기공명 기법을 이용하여 상자성 물질인 $CuF_2$를 조사한 결과 상온에서 $^{19}F$ 위치의 차이에 의한 확연히 구별되는 두 개의 공명선을 얻었다. 한 선은 진동수 이동이 거의 없었지만 다른 한 선은 진동수 이동이 심했다. 두 경우 모두 스핀-격자 완화시간$(T_1)$이 짧지만 진동수 이동이 심한 경우에 $T_1$ 이 더 짧았다. 이는 두 경우에 대한 주위의 전자 환경이 다르기 때문으로 해석된다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 춘계학술대회 논문집
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• pp.593-596
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• 1999

This paper presents a process optimization of antireflectiun (AR) coating on crystalline Si solar cells. Theoretical and experimental investigations were performed on a doble-layer AR(DLAR) coating of MgF$_2$/CeO$_2$, We investigated CeO$_2$ films as an All layer because they hale a proper refractive index of 2.46 and demonstrate the same lattice constant as Si substrate. RF sputter grown CeO$_2$ film showed strong dependence on a deposition temperature. The CeO$_2$ film deposited at 400 $^{\circ}C$ exhibited a strong (111) preferred orientation and the lowest surface roughness of 6.87 $\AA$. Refractive index of MgF$_2$ film was measured as 1.386 for the most of growth temperature. An optimized DLAR coating showed a reflectance as low as 2.04 % in the wavelengths ranged from 0.4 7m to 1.1 7m. We achieved the efficiencies of solar cells greater than 15% with 3.12 % improvement with DLAR coatings . Further details on MgF$_2$, CeO$_2$ films, and cell fabrication Parameters are presented in this paper.