• Nuclear Engineering and Technology
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• v.55 no.3
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• pp.919-926
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• 2023

To analyze the cause of the destruction of thin, carbon-backed lithium fluoride targets during a measurement of the fusion of ⁷Li and ¹⁷O, we estimate theoretically the lifetimes of carbon and LiF films due to sputtering, thermal evaporation, and lattice damage and compare them with the lifetime observed in the experiment. Sputtering yields and thermal evaporation rates in carbon and LiF films are too low to play significant roles in the destruction of the targets. We estimate the lifetime of the target due to lattice damage of the carbon backing and the LiF film using a previously reported model. In the experiment, elastically scattered target and beam ions were detected by surface silicon barrier (SSB) detectors so that the product of the beam flux and the target density could be monitored during the experiment. The areas of the targets exposed to different beam intensities and fluences were degraded and then perforated, forming holes with a diameter around the beam spot size. Overall, the target thickness tends to decrease linearly as a function of the beam fluence. However, the thickness also exhibits an increasing interval after SSB counts per beam ion decreases linearly, extending the target lifetime. The lifetime of thin LiF film as determined by lattice damage is calculated for the first time using a lattice damage model, and the calculated lifetime agrees well with the observed target lifetime during the experiment. In experiments using a thin LiF target to induce nuclear reactions, this study suggests methods to predict the lifetime of the LiF film and arrange the experimental plan for maximum efficiency.

• Journal of the Korean Magnetics Society
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• v.5 no.5
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• pp.854-857
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• 1995

We have studied the temperature dependence of the $^{1}H$ NMR spin-lattice relaxation for the impure $CuF_{2}.2H_{2}O$ over a temperature range from 77 K to room temperature. We find that the remperature dependence of the $^{1}H$ spin-lattice relaxation is dominated by the eletron spin-flip and the Raman process of eletron spin-lattice relaxation. The electron spin-flip exchange energy was calculated to be $1.8(\pm0.04)$ K.

• Journal of the Korean Magnetics Society
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• v.3 no.1
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• pp.13-17
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• 1993

We have studied $CuF_{2}.2H_{2}O$ using $^{1}H$ and $^{19}F$ pulsed nuclear magnetic resonance at 30 MHz. From the data of lineshapes, the spin-lattice relaxation times ($T_1$) and the spin echo decay times, lattice dynamics in the structure is investigated. $T_1$ data from both $^{1}H$ and $^{19}F$ NMR indicate that spin-lattice relaxation is dominated by the paramagnetic ion centers at the Cu sites. The lineshapes at room temperature appear to be strongly affected by exchange narrowing and motional narrowing.

• Korean Journal of Mathematics
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• v.27 no.2
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• pp.425-435
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• 2019

The notion of multiplier for an almost distributive lattice is introduced, and some related properties are investigated. Moreover, we introduce a congruence relation ${\phi}_{\alpha}$ induced by ${\alpha}{\in}L$ on an almost distributive lattice and derive some useful properties of ${\phi}_{\alpha}$.

• Communications of the Korean Mathematical Society
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• v.15 no.3
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• pp.511-519
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• 2000

If G is a strict generalized orthomodular lattice and H={I｜I=[0, $\chi$, $\chi$$\in$G}, then H is prime ideal of the Janowitz's hull J(G) of G. If f is the janowitz's embedding, then the set of all commutatiors of f(G) equals the set of all commutators of the Janowitz's hull J(G) of G. Let L be an OML. Then L J(G) for a strict GOML G if and only if ther exists a proper nonprincipal prime ideal G in L.

• Kyungpook Mathematical Journal
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• v.45 no.2
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• pp.293-299
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• 2005

Let ${\cal{L}}$ be a commutative subspace lattice on a Hilbert space ${\cal{H}}$ and X and Y be operators on ${\cal{H}}$. Let $${\cal{M}}_X=\{{\sum}{\limits_{i=1}^n}E_{i}Xf_{i}:n{\in}{\mathbb{N}},f_{i}{\in}{\cal{H}}\;and\;E_{i}{\in}{\cal{L}}\}$$ and $${\cal{M}}_Y=\{{\sum}{\limits_{i=1}^n}E_{i}Yf_{i}:n{\in}{\mathbb{N}},f_{i}{\in}{\cal{H}}\;and\;E_{i}{\in}{\cal{L}}\}.$$ Then the following are equivalent. (i) There is an operator A in $Alg{\cal{L}}$ such that AX = Y, Ag = 0 for all g in ${\overline{{\cal{M}}_X}}^{\bot},A^*A=AA^*$ and every E in ${\cal{L}}$ reduces A. (ii) ${\sup}\;\{K(E, f)\;:\;n\;{\in}\;{\mathbb{N}},f_i\;{\in}\;{\cal{H}}\;and\;E_i\;{\in}\;{\cal{L}}\}\;<\;\infty,\;{\overline{{\cal{M}}_Y}}\;{\subset}\;{\overline{{\cal{M}}_X}}$and there is an operator T acting on ${\cal{H}}$ such that ${\langle}EX\;f,Tg{\rangle}={\langle}EY\;f,Xg{\rangle}$ and ${\langle}ET\;f,Tg{\rangle}={\langle}EY\;f,Yg{\rangle}$ for all f, g in ${\cal{H}}$ and E in ${\cal{L}}$, where $K(E,\;f)\;=\;{\parallel}{\sum{\array}{n\\i=1}}\;E_{i}Y\;f_{i}{\parallel}/{\parallel}{\sum{\array}{n\\i=1}}\;E_{i}Xf_{i}{\parallel}$.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.20 no.4
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• pp.159-163
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• 2010

Co-(0.5 mol%) and Ce-(0~0.3 mol%) doped cubic zirconia ($ZrO_2:Y_2O_3$=64:36 mol%) single crystals grown by a skull melting method were heat-treated in $N_2$ at $1200^{\circ}C$ for 3 hrs. The brown-colored as-grown single crystals were changed into either green or blue color after the heat treatment. Before and after the heat treatment, the YSZ (yttriastabilized zirconia) single crystals were cut for wafer form (${\phi}7mm{\times}t2mm$) and round brilliant cut ($\phi$ 12 mm). The optical and structural properties were examined by UV-VIS spectrophotometer and X-ray diffraction. Absorption by $Ce^{3+}(^2F_{5/2},\;_{7/2}(4f){\rightarrow}^2T_g(5d^1)),\;Co^{2+}(^4A_2(^4F){\rightarrow}^4T_1(^4F)$ or $^4T_1(^4P))$ and $Co^{3+}$, change of ionization energy and lattice parameter were confirmed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.06a
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• pp.239-242
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• 1998

Ca $F_2$ films have superior gate insulator properties than conventional gate insulator such as $SiO_2$, Si $N_{x}$, $SiO_{x}$, and T $a_2$ $O_{5}$ to the side of lattice mismatch between Si substrate and interface trap charge density( $D_{it}$). Therefore, this material is enable to apply Thin Film Transistor(TFT) gate insulator. Most of gate oxide film have exhibited problems on high trap charge density, interface state in corporation with O-H bond created by mobile hydrogen and oxygen atom. This paper performed Ca $F_2$ property evaluation as MIM, MIS device fabrication. Ca $F_2$ films were deposited at the various substrate temperature using a thermal evaporation. Ca $F_2$ films was grown as polycrystalline film and showed grain size variation as a function of substrate temperature and RTA post-annealing treatment. C-V, I-V results exhibit almost low $D_{it}$(1.8$\times$10$^{11}$ $cm^{-1}$ /le $V^{-1}$ ) and higher $E_{br}$ (>0.87MV/cm) than reported that formerly. Structural analysis indicate that low $D_{it}$ and high $E_{br}$ were caused by low lattice mismatch(6%) and crystal growth direction. Ca $F_2$ as a gate insulator of TFT are presented in this paper paperaper

• Communications of the Korean Mathematical Society
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• v.26 no.1
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• pp.13-21
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• 2011

The aim of this paper is to introduce the notion of permuting tri-f-derivations in lattices and to study some properties of permuting tri-f-derivations.

• Steel and Composite Structures
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• v.52 no.1
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• pp.89-107
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• 2024

This article focuses on the static and dynamic analysis and optimization of an anisogrid lattice plate subjected to axial compressive load with simply supported boundary conditions. The lattice plate includes diagonal and transverse ribs and is modeled as an orthotropic plate with effective stiffness properties. The study employs the first-order shear deformation theory and the Ritz method with a Legendre approximation function. In the realm of optimization, the Non-dominated Sorting Genetic Algorithm-II is utilized as an evolutionary multi-objective algorithm to optimize. The research findings are validated through finite element analysis. Notably, this study addresses the less-explored areas of optimizing the geometric parameters of the plate by maximizing the buckling load and natural frequency while minimizing mass. Furthermore, this study attempts to fill the gap related to the analysis of the post-buckling behavior of lattice plates, which has been conspicuously overlooked in previous research. This has been accomplished by conducting nonlinear analyses and scrutinizing post-buckling diagrams of this type of lattice structure. The efficacy of the continuous methods for analyzing the natural frequency, buckling, and post-buckling of these lattice plates demonstrates that while a degree of accuracy is compromised, it provides a significant amount of computational efficiency.