• Journal of the Korea Academia-Industrial cooperation Society
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• v.15 no.2
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• pp.1211-1215
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• 2014

We developed a new $Rb_2LiCeCl_6$ scintillator and determined the scintillation and thermoluminescence properties of the scintillator. The emission spectrum of $Rb_2LiCeCl$ is located in the range of 350 ~ 410 nm, peaking at 368 nm and 378 nm, due to the 4f ${\rightarrow}$ 5d transition of $Ce^{3+}$ ions. The fluorescence decay time of the crystal is composed two components. The fast component is 71 ns (85%) and the slow component is 405 ns (15%) of the crystal. The after-glow is caused by the electron and hole traps in the crystal lattice. We determined physical parameters of the traps in the crystal. The determined activation energy(E), kinetic order(m) and frequency factor(s) of the trap are 0.75 eV, 1.48 and $3.0{\times}10^8s^{-1}$, respectively.

• Journal of the Korean Ceramic Society
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• v.56 no.1
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• pp.104-110
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• 2019

The low-temperature sintering behavior of AlN was investigated through a conventional method. $CaF_2$, CuO and Cu were selected as additives based on their low melting points. When sintered at $1600^{\circ}C$ for 8 h in $N_2$ atmosphere, a sample density > 98% was obtained. The X-ray data indicated that eutectic reactions below $1200^{\circ}C$ were found. Therefore, the current systems have lower liquid formation temperatures than other systems. The liquid phase showed high dihedral angles at triple grain junctions, indicating that the liquid had poor wettability on the grain surfaces. Eventually, the liquid was likely to vaporize due to the unfavorable wetting condition. As a result, a microstructure with clean grain boundaries was obtained, resulting in higher contiguity between grains. From EDS analysis, oxygen impurity seems to be well removed in AlN lattice. Therefore, it is believed that the current systems are beneficial for reducing sintering temperature and improving oxygen removal.

• The Plant Pathology Journal
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• v.38 no.1
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• pp.1-11
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• 2022

Fusarium culmorum is one of the most important causal agents of root rot of wheat. In this study, 10 F. culmorum isolates were collected from farms located in five agro-ecological regions of Morocco. These were used to challenge 20 durum wheat genotypes via artificial inoculation of plant roots under controlled conditions. The isolate virulence was determined by three traits (roots browning index, stem browning index, and severity of root rot). An alpha-lattice design with three replicates was used, and the resulting ANOVA revealed a significant (P < 0.01) effect of isolate (I), genotype (G), and G × I interaction. A total of four response types were observed (R, MR, MS, and S) revealing that different genes in both the pathogen and the host were activated in 53% of interactions. Most genotypes were susceptible to eight or more isolates, while the Moroccan cultivar Marouan was reported resistant to three isolates and moderately resistant to three others. Similarly, the Australian breeding line SSD1479-117 was reported resistant to two isolates and moderately resistant to four others. The ICARDA elites Icaverve, Berghisyr, Berghisyr2, Amina, and Icaverve2 were identified as moderately resistant. Principal component analysis based on the genotypes responses defined two major clusters and two sub-clusters for the 10 F. culmorum isolates. Isolate Fc9 collected in Khemis Zemamra was the most virulent while isolate Fc3 collected in Haj-Kaddour was the least virulent. This work provides initial results for the discovery of differential reactions between the durum lines and isolates and the identification of novel sources of resistance.

• Journal of Sensor Science and Technology
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• v.11 no.6
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• pp.371-377
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• 2002

$Y_2O_3:Eu^{3+}$ and Li-doped $Y_2O_3:Eu^{3+}$ thin films have been grown on sapphire substrates using a pulsed laser deposition technique. The thin film phosphors were deposited at a substrate temperature of $600^{\circ}C$ under the oxygen pressure of 100, 200 and 300 mTorr. The films grown under different deposition conditions have been characterized using microstructural and luminescent measurements. The crystallinity and photoluminescence (PL) of the films are highly dependent on the oxygen pressure. The PL brightness data obtained from $Y_2O_3:Eu^{3+}$ films grown under optimized conditions have indicated that sapphire is one of the most promising substrate for the growth of high quality $Y_2O_3:Eu^{3+}$ thin film red phosphor. In particular, the incorporation of $Li^{+}$ ions into $Y_2O_3$ lattice could induce a remarkable increase of PL. The highest emission intensity was observed with LiF-doped $Y_{1.84}Li_{0.08}Eu_{0.08}O_3(Y_2O_3LiEu)$, whose brightness was increased by a factor of 2.7 in comparison with that of $Y_2O_3:Eu^{3+}$ films. This phosphor may promise for application to the flat panel displays.

• Journal of the Korean Vacuum Society
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• v.4 no.S1
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• pp.168-173
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• 1995

$GaxIn{1_x}As$ epitaxial layers were grown by a simplified hydrode vapor phase epitaxy(VPE) method bsed on the utilization of Ga/In alloy as the source metal. The effects of a wide range of experimental variables(i.e.,inlet mole fraction of HCI, deposition temperature, Ga/In alloy composition) on the ternary composition and growth rate were investigated. Layers of $Ga_{0.47}In_{0.53}As$ lattice matched to InP were successfully grown from alloys containing 5 to 8 at.% Ga. These layers were used to produce state-of-the art p-i-n photodetectors having the following characteristics: dark current, $I_d$(-5V) = 10-20 nA: responsivity, R=0.84-0.86 A/W; dark current, Id(-5V)=10-20 nA; responsivity, R=0.84-0.86 A/W; capacitance, C=0.88-0.92 pF; breakdown voltage, $V_b$ >40V. This study demonstrated for the first time that a simplified hydride VPE process with a Ga/In alloy source is capable of producing device quality epitaxial layers.

• Proceedings of the KIEE Conference
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• 2008.10a
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• pp.171-172
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• 2008

$(Ba_{0.57}Sr_{0.33}Ca_{0.10})TiO_3$ (BSCT) thick films doped with 0.1 mol% $MnCO_3$ and $Yb_2O_3$ ($0.1{\sim}0.7$ mol%) were fabricated by the screen printing method on the alumina substrate. And the structural and electrical properties as a function of $Yb_2O_3$ amount were investigated. The lattice constants of the BSCT thick film doped with 0.1 mol% is 0.3955 nm. The specimen doped with 0.7 mol% $Yb_2O_3$ showed dense and uniform grains with diameters of about 6.3 mm. The thickness of all BSCT thick films was approximately 60 mm. The Curie temperature of the BSCT specimen doped with 0.1 mol% $Yb_2O_3$ was $18^{\circ}C$, and the dielectric constantand dielectric loss at this temperature was 4637 and 4.2%, respectively. The BSCT specimen doped with 0.1 mol% $Yb_2O_3$ showed the maximum value of $349{\times}10^{-9}C/cm^2K$ at Curie temperature. The figure of merit $F_D$ for specific detectivity of the specimens doped with 0.1 mol% $Yb_2O_3$ showed the highest value of $10.9{\times}10^{-9}Ccm/J$.

• Journal of the Korean Society for Heat Treatment
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• v.18 no.5
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• pp.312-317
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• 2005

The precipitation process in Cu-0.2 wt.%Cr-0.05 wt.%Zr alloys has been studied by electrical electrical resistivity measurements. The kinetics of precipitation could be well described by Johnson-Mehl-Avrami equation, $f(t)=1-\exp(-kt^n)$. The values of n were found to be in the range of 0.36~0.42 at first stage and 1.3~1.6 at second stage. The activation energy was determined by cross-cut method and was 80~89 kJ/mol. The value is similar to the energy for the migration of either a vacancy or a vacancy-solute complex through the lattice.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1995.11a
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• pp.167-170
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• 1995

LiCoO$_2$is a electrode material of Li ion Cell which is expected as the cell with a very high electric charge density. The recent study is mainly to focused on a high power secondary cell. If very thin Li ion Cell can be made in the scale of IC substrate it can be a electric souse in IC chip , micro machine or very thin electrical display etc. LiCoO$_2$thin film can be made by CVD, Laser ablation, E-Beam, ton Beam process, sputtering etc. But to make the material with a high quality for a cell is difficult as the electrode in cell have the fitable ratio in components and a lattice structure of bulk etc. In this study, LiCoO$_2$is made by R.F magnetron sputtering with the variance of substrate temperature and oxygen partial pressure etc. In the substrate temperature of 600$^{\circ}C$ and the oxygen rate of 10%, we can acquire the good thin film LiCoO$_2$compared wish a bulk material.

• Journal of Environmental Science International
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• v.29 no.8
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• pp.793-800
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• 2020

The conventional development of multi-component electrodes is based on the researcher's experience and is based on trial and error. Therefore, there is a need for a scientific method to reduce the time and economic losses thereof and systematize the mixing of electrode components. In this study, we use design of mixture experiments (DOME)- in particular a simplex lattice design with Design Expert^Ⓡ program- to attempt to find an optimum mixing ratio for a three-component electrode for the high RNO degradation; RNO is an indictor of OH radical formation. The experiment included 12 experimental points with 2 center replicates for 3 different independent variables (with the molar ratio of Ru, Ti, Ir). As the Prob > F value of the 'Quadratic' model is 0.0026, the secondary model was found to be suitable. Applying the molar ratio of the electrode components to the corrected response model results is an RNO removal efficiency (%) = 59.89 × [Ru] + 9.78 × [Ti] + 67.03 × [Ir] + 66.38 × [Ru] × [Ir] + 132.86 × [Ti] × [Ir]. The R² value of the equation is 0.9374 after the error term is excluded. The optimized formulation of the ternary electrode for an high RNO degradation was acquired when the molar ratio of Ru 0.100, Ti 0.200, Ir 0.700 (desirability d value, 1).

• Journal of Magnetics
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• v.14 no.4
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• pp.161-164
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• 2009

Iron-doped $Sn_{1-x}Fe_xO_2$ (x = 0.0, 0.05, 0.1, 0.2, 0.33) thin films on Si(100) substrates and powders were prepared by a chemical solution process. The x-ray diffraction (XRD) patterns of the $Sn_{1-x}Fe_xO_2$ thin films and powders showed a polycrystalline rutile tetragonal structure. Thermo gravimetric (TG) - differential thermal analysis (DTA) showed the final weight loss above $430{^{\circ}C}$ for all powder samples. According to XRD Rietveld refinement of the powders, the lattice parameters and unit cell volume decreased with increasing Fe content. The magnetic properties were characterized using a vibrating sample magnetometer (VSM) and M$\ddot{o}$ssbauer spectroscopy. The thin film samples with x = 0.1 and 0.2 showed paramagnetic properties but thin films with x = 0.33 exhibited ferromagnetic properties at room temperature. Mossbauer studies revealed the $Fe^{3+}$ valence state in the samples. The ferromagnetism in the samples can be interpreted in terms of the direct ferromagnetic coupling of ferric ions via an electron trapped in a bridging oxygen deficiency, which can be explained using the F-center exchange model.