• Journal of Institute of Control, Robotics and Systems
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• v.21 no.2
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• pp.162-167
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• 2015

In this paper, we propose a F-MBE algorithm for Dual mode seeker (CCD and IIR). The MBE algorithm show improved performance at the IIR target size estimation. but the MBE can't use at Dual Mode seeker. To overcome this problem,, we apply template matching method for CCD target size information. The performance of proposed F-MBE method is tested at target intercept scenario of dual mode seeker equipped missile. The experiment results show that the proposed algorithm has the relatively improved performance.

• Proceedings of the Materials Research Society of Korea Conference
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• 2005.05a
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• pp.246-246
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• 2005

• Journal of the Korean Institute of Telematics and Electronics
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• v.27 no.1
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• pp.46-50
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• 1990

Heteroface AlGaAs/GaAs drift solar cells with an active area conversion efficiency of 15.9% under one sun and AM 1.5 condition have been grown by molecular beam epitaxy(MBE). These drift solar cells have graded doping profiles in the base and emitter regions. The cells have a short circuit current density (Jsc) of 19.00 mA/cm\ulcorner an open circuit voltage(Voc) of 0.93 V, and f fill factor(FF) of 0.78, respectively. Conventional solar cells with fixed doping profiles were also grown by MBE for comparison with the drift solar cells. Even though the fabrication cost of MBE grown solar cell is higher, the expected highest conversion efficiency of the single or multiple cells could compensate for the increased cost, particularly in case of space applications.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1998.06a
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• pp.71-74
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• 1998

$Er^{3+}$ doped $NdF_{3}$ single crystalline thin films with smooth, microcrack-free, and high-crystalline quality were grown on $CaF_{2}(111)$ substrate at $500^{\circ}C$by molecular beem epitaxy(MBE). The relation-ship between subcell and supercell showing the reconstructed $3^{1/2} \times 3^{1/2}$ structure was studied by reflection high-energy electron diffraction(RHEED) investigation. The film surface and the growth mode were examined in studied by RHEED patterns and atomic force microscope(AFM) images ex situ. The crystallinity of film and the lattice mismatch between $NdF_{3}Er}^{3+}(0002)$ film and $CaF_{2}(111)$ substrate depending in the $Er^{3+}$ concentration were investigated by X-ray rocking curve analysis.

• Journal of Environmental Health Sciences
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• v.29 no.2
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• pp.16-22
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• 2003

BBP (Butyl benzyl phthalate), a widely used plasticizer. can enter the food and environment as consequence of its manufacture, use, and disposal. BBP was found to be developmental and teratogenic or endocrine disrupting chemical in rats. The effects of BBP were investigated in female rats (P) and second generation (F1) via lactations. Sprague-Dawley were given BBP by oral administration at 0, 5, 10, 100, 1000 mg/kg on day 0 to 21 of lactation period. The results were as follows : At maternal findings, there were some significant changes (p<0.05) in relative organ weight, especially liver and uterus weight by BBP administration. In estrous cycle, high treated group was inclined to be proestrus or estrus compared to control group. BBP indues estrous cycle earlier than the control group. At fetal findings, there were some significant changes in relative liver and spleen weight, especially 100, 1000 mg/kg administered groups. The relative weight of ventral prostate was decreased, so it was represent to dose-response tendency. Parent rats (P) were detected monobenzyl phthalate (MBeP) 3.21~5.81 $\mu\textrm{g}$/ml in 100, 1000 mg/kg dose groups. MBeP of male and female fetuses (F1) were detected at the level of 1.21~2.63 $\mu\textrm{g}$/ml of serum. Male serum concentration oi MBeP was higher than the females'. Estrogen receptor $\alpha$ expression by BBP and bisphenol A in uterus and testis of F1 were studied. The ER$\alpha$ expression were increased in F1 male testis and female uterus. F1 male showed distint ER$\alpha$ expression, especially in the combined exposrue. Synergistic ER$\alpha$ expression was found by combined treatment group of BBP and bisphenol A. From the above results, it could be concluded that the effects of dams and F1 by BBP administration during lactation period were estrogenic, and BBP can transfer to F1 via lactation, and make estrogenic at F1 reproductive organs.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.15 no.8
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• pp.752-758
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• 2004

This paper reports on the DC and RF characteristics of AlGaN/InGaN/GaN high electron-mobility transistors (HEMTs) grown by molecular beau epitaxy(MBE) on sapphire substrates. The devices with a 0.5 ${\mu}$m gate-length exhibited relatively flat transconductance(g$\_$m/), which results from the enhanced carrier confinement of the InGaN channel. The maximum drain current was 880 mA/mm with a peak g$\_$m/ of 156 mS/mm, an f$\_$T/ of 17.3 GHz, and an f$\_$MAX/ or 28.7 GHz. In addition to promising DC and RF results, pulsed I-V and current-switching measurements showed little dispersion in the unpassivated AlGaN/InGaN HEMTs. These results suggest that the addition of In to the GaN channel improves the electron transport characteristics as well as suppressing current collapse that is related to the surface trap states.

• Proceedings of the IEEK Conference
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• 2000.06b
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• pp.16-19
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• 2000

DC and low frequency noise characteristics of InGaP/InGaAs pseudomorphic HEMTs (p-HEMTs) grown by compound source MBE are investigated for temperature range of 150K to 370K. Equivalent input noise spectra( $S_{iv}$ ) were measured as a function of frequency and temperature. $S_{iv}$ was measured to be 3.4 $\times$ 10$^{-12}$ $V^2$/ Hz at 1kHz for 1.3 X 50${\mu}{\textrm}{m}$$^2$InGaP/InGaAs p-HEMT at room temperature. Measurements of the low-frequency noise spectra of the p-HEMT as a function of temperature show that the trap with an activation energy level around 0.589 eV is a dominant trap that accounts for the low-frequency noise behavior of the device. The normalized extrinsic gm frequency dispersion of the p-HEMT. was as low as 2.5％ at room temperature, indicating that the device has well-behaved low-frequency noise characteristics. Sub-micron (0.25 $\times$ 50${\mu}{\textrm}{m}$$^2$) gate p-HEMT showed $f_{T}$ and $f_{max}$ of 40GHz and 108GHz, respectively.y.y.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1998.09a
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• pp.3-7
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• 1998

The rare-earth ions (R3+, R=Nd, Er) doped CaF2 layers have been grown on CaF2(111) substrate by molecular beam epitaxy. The epitaxial relationship and the crystallinity of CaF2:R3+ layers depending on the concentration of R3+ were studied by reflection high-energy electron diffraction (RHEED). In aspect of application as buffer layer in semiconductor-related hybrid structure, the lattice displacement between CaF2:R3+ layers and CaF2(111) substrate was investigated by X-ray rocking curve analysis.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.2
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• pp.57-65
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• 1995

The effects of device geometry and layout on high speed performance such as current gain outoff frequency(f$_{T}$) and maximum oscillation frequency(f$_{max}$) are of very improtant for the scaling-down of geterojunction bipolar transistors(HBT$_{s}$). In this paper AlGaAs/GaAs HBTs are fabricated by MBE epitaxial growth and conventional mesa process, and the experimental data of emitter-base geometru dependency of HBT performance are presented in order to provide the quantitative information for optimum device structure design. It is shown that f$_{T}$ and f$_{max}$ are inversely proportional to the emiter stripe width, while the low emitter perimeter/area ratio is better to f$_{T}$ and worse ot f$_{max}$. It is also demonstrated the f$_{T}$ and f$_{max}$ are highly improved by the emitter-base spacing reduction resulting in less parsitic effects. As the result f$_{T}$ of 42GHz and f$_{max}$ of 23GHz are obtained for fabricated HBT with emitter area of 3${\times}20^{\mu}m^{2}$ and E-B spacing of 0.2$\mu$m.m.m.

• Proceedings of the Acoustical Society of Korea Conference
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• 1994.06c
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• pp.175-178
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• 1994

본 논문에서는 선형 예측 방법과 다중 대역 여기 방법의 장점을 조합하여 낮은 전송률에서 고품질의 합성음을 제공하는 LP-SMBE 부호기를 제안한다. LP-SMBE 부호기에서는 선형 예측 방법과 단순화된 여기 신호 추정방법을 이용하여 성도 특성 정보와 여기 신호를 분리 추정한다. 제안한 단순화된 여기 신호 추정 방법은 정규화된 스펙트럼 영역에서 원음 스펙트럼과 합성 스펙트럼을 비교하여 여기 신호를 추정한다. 이 방법은 기존 MBE 방법의 여기 신호 추정 방법보다 연산량이 적고, 여기 신호르 F보다 정확히 추정할 수 있다.