• Title/Summary/Keyword: Extreme ultraviolet

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Single Exposure Imaging of Talbot Carpets and Resolution Characterization of Detectors for Micro- and Nano- Patterns

  • Kim, Hyun-su;Danylyuk, Serhiy;Brocklesby, William S.;Juschkin, Larissa
    • Journal of the Optical Society of Korea
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    • v.20 no.2
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    • pp.245-250
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    • 2016
  • In this paper, we demonstrate a self-imaging technique that can visualize longitudinal interference patterns behind periodically-structured objects, which is often referred to as Talbot carpet. Talbot carpet is of great interest due to ever-decreasing scale of interference features. We demonstrate experimentally that Talbot carpets can be imaged in a single exposure configuration revealing a broad spectrum of multi-scale features. We have performed rigorous diffraction simulations for showing that Talbot carpet print can produce ever-decreasing structures down to limits set by mask feature sizes. This demonstrates that large-scale pattern masks may be used for direct printing of features with substantially smaller scales. This approach is also useful for characterization of image sensors and recording media.

Determination of Optical Constants of Thin Films in Extreme Ultraviolet Wavelength Region by an Indirect Optical Method

  • Kang, Hee Young;Lim, Jai Dong;Peranantham, Pazhanisami;HwangBo, Chang Kwon
    • Journal of the Optical Society of Korea
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    • v.17 no.1
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    • pp.38-43
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    • 2013
  • In this study, we propose a simple and indirect method to determine the optical constants of Mo and ITO thin films in the extreme ultraviolet (EUV) wavelength region by using X-ray reflectometry (XRR) and Rutherford backscattering spectrometry (RBS). Mo and ITO films were deposited on silicon substrates by using an RF magnetron sputtering method. The density and the composition of the deposited films were evaluated from the XRR and RBS analysis, respectively and then the optical constants of the Mo and ITO films were determined by an indirect optical method. The results suggest that the indirect method by using the XRR and RBS analysis will be useful to search for suitable high absorbing EUVL mask material quickly.

Gold-sapphire Plasmonic Nanostructures for Coherent Extreme-ultraviolet Pulse Generation

  • Han, Seunghwoi
    • Current Optics and Photonics
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    • v.6 no.6
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    • pp.576-582
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    • 2022
  • Plasmonic high-order harmonic generation (HHG) is used in nanoscale optical applications because it can help in realizing a compact coherent ultrashort pulse generator on the nanoscale, using plasmonic field enhancement. The plasmonic amplification of nanostructures induces nonlinear optical phenomena such as second-order harmonic generation, third-order harmonic generation, frequency mixing, and HHG. This amplification also causes damage to the structure itself. In this study, the plasmonic amplification according to the design of a metal-coated sapphire conical structure is theoretically calculated, and we analyze the effects of this optical amplification on HHG and damage to the sample.

Optical Proximity Correction using Sub-resolution Assist Feature in Extreme Ultraviolet Lithography (극자외선 리소그라피에서의 Sub-resolution assist feature를 이용한 근접효과보정)

  • Kim, Jung Sik;Hong, Seongchul;Jang, Yong Ju;Ahn, Jinho
    • Journal of the Semiconductor & Display Technology
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    • v.15 no.3
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    • pp.1-5
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    • 2016
  • In order to apply sub-resolution assist feature (SRAF) in extreme ultraviolet lithography, the maximum non-printing SRAF width and lithography process margin needs to be improved. Through simulation, we confirmed that the maximum SRAF width of 6% attenuated phase shift mask (PSM) is large compared to conventional binary intensity mask. The increase in SRAF width is due to dark region's reflectivity of PSM which consequently improves the process window. Furthermore, the critical dimension error caused by variation of SRAF width and center position is reduced by lower change in diffraction amplitude. Therefore, we speculate that the margin of SRAF application will be improved by using PSM.

Extreme Ultraviolet Plasma and its Emission Characteristics Generated from the Plasma Focus in Accordance with Gas Pressure for Biological Applications

  • Kim, Jin Han;Lee, Jin Young;Kim, Sung Hee;Choi, Eun Ha
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.08a
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    • pp.178.2-178.2
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    • 2013
  • Conventional ultraviolets A,B,C are known to be very important factor of killing, changing surface properties of biological cells and materials. It is of great importance to investigate the influence of extreme ultraviolet (EUV) exposure on the biological cell. Here we have studied high density EUV plasma and its emission characteristics, which have been generated by plasma focus device with hypercycloidal pinch (HCP) electrode under various Ar gas pressures ranged from 30~500 mTorr in this experiment. We have also measured the plasma characteristics generated from the HCP plasma focus device such as electron temperature by the Boltzman plot, plasma density by the Stark broading method, discharge images by open-shuttered pin hole camera, and EUV emission signals by using the photodiode AXUV-100 Zr/C.

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CO TO H2 RATIO OF INTERSTELLAR MOLECULAR CLOUDS IN THE DIRECTIONS OF EARLY TYPE STARS (초기형 별 방향 성간운의 CO 와 H2 비율 계산)

  • Park, Jae-Woo;Lee, Dae-hee;Min, Kyoung-Wook
    • Journal of Astronomy and Space Sciences
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    • v.21 no.4
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    • pp.243-248
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    • 2004
  • We present measurements of interstellar CO absorption lines in the spectra of 7 early-type stars that were observed with the FUSE(Far Ultraviolet Spectroscopic Explore.) Among 54 early-type target stars in the Galactic disk and halo observed with the BBFS(Berkeley Extreme and Far-ultraviolet Spectrometer), we choose 7 program stars (HD 37903, HD 97991, HD 149881, HD 156110, HD 164794, HD 214080 and HD 219188) which have only a single velocity component in the high-resolution optical measurements, in order to avoid line blending. To analyze the CO molecule, we select the E-X (0-0) band at $1076{\AA}$, which has a large oscillate. strength and is not blended with other interstellar absorption lines. We detect the CO absorption lines in three (HD 37903, HD 164794, and HD 214080) out of seven targets, and derive CO column densities for those targets. We also estimated the CO to $H_2$ ratios toward the three stars, based on the previously estimated $H_2$ column densities.

Influence of Ne-Xe Gas Mixture Ratio on the Extreme Ultraviolet (EUV) Emission Measurement from the Coaxially Focused Plasma

  • Lee, Sung-Hee;Hong, Young-June;Choi, Duk-In;Uhm, Han-Sup;Choi, Eun-Ha
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.02a
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    • pp.220-220
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    • 2011
  • The Ne-Xe plasmas in dense plasma-focus device with coaxial electrodes were generated for extreme ultraviolet (EUV) lithography. The influence of gas mixture ratio, Ne-Xe (1, 10, 15, 20, 25, 30, 50%) mixture gas, on EUV emission measurement, EUV intensity and electron temperature in the coaxially focused plasma were investigated. An input voltage of 4.5 kV was applied to the capacitor bank of 1.53mF and the diode chamber was filled with Ne-Xe mixture gas at a prescribed pressure. The inner surface of the cylindrical cathode was lined by an acetal insulator. The anode was made of tin metal. The EUV emission signal of the wavelength in the range of 6~16 nm has been detected by a photo-detector (AXUV-100 Zr/C, IRD). The visible emission line was also detected by the composite-grating spectrometer of the working wavelength range of 200~1100 nm (HR 4000CG). The electron temperature is obtained by the optical emission spectroscopy (OES) and measured by the Boltzmann plot with the assumption of local thermodynamic equilibrium (LTE).

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