• Title/Summary/Keyword: ExpGA

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A Study of A Design Optimization Problem with Many Design Variables Using Genetic Algorithm (유전자 알고리듬을 이용할 대량의 설계변수를 가지는 문제의 최적화에 관한 연구)

  • 이원창;성활경
    • Journal of the Korean Society for Precision Engineering
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    • v.20 no.11
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    • pp.117-126
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    • 2003
  • GA(genetic algorithm) has a powerful searching ability and is comparatively easy to use and to apply as well. By that reason, GA is in the spotlight these days as an optimization skill for mechanical systems.$^1$However, GA has a low efficiency caused by a huge amount of repetitive computation and an inefficiency that GA meanders near the optimum. It also can be shown a phenomenon such as genetic drifting which converges to a wrong solution.$^{8}$ These defects are the reasons why GA is not widdy applied to real world problems. However, the low efficiency problem and the meandering problem of GA can be overcomed by introducing parallel computation$^{7}$ and gray code$^4$, respectively. Standard GA(SGA)$^{9}$ works fine on small to medium scale problems. However, SGA done not work well for large-scale problems. Large-scale problems with more than 500-bit of sere's have never been tested and published in papers. In the result of using the SGA, the powerful searching ability of SGA doesn't have no effect on optimizing the problem that has 96 design valuables and 1536 bits of gene's length. So it converges to a solution which is not considered as a global optimum. Therefore, this study proposes ExpGA(experience GA) which is a new genetic algorithm made by applying a new probability parameter called by the experience value. Furthermore, this study finds the solution throughout the whole field searching, with applying ExpGA which is a optimization technique for the structure having genetic drifting by the standard GA and not making a optimization close to the best fitted value. In addition to them, this study also makes a research about the possibility of GA as a optimization technique of large-scale design variable problems.

Anti-inflammatory effects of Agar free-Gelidium amansii (GA) extracts in high-fat diet-induced obese mice

  • Lee, Yunkyoung;Oh, Hyunhee;Lee, Myoungsook
    • Nutrition Research and Practice
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    • v.12 no.6
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    • pp.479-485
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    • 2018
  • BACKGROUND/OBJECTIVES: Gelidium amansii (GA) contains plenty of agars and various biological substances, which make them a popular functional food to control body weight in previous studies. Unlike previous studies focused on agar in GA, objectives of this study were to investigate the effects of agar-free GA extract (AfGAE) on preventive and treatment models by using diets-induced obese (DIO) C57BL/6J mice. MATERIALS/METHODS: AfGAE were used to test their effects on the prevention (Exp-1) and treatment (Exp-2) against obesity after pilot study in DIO mice. The weight changes of the body and fat tissues and protein expression related to lipid metabolism and inflammation as well as plasma lipid profile and insulin were detected. RESULTS: Although AfGAE did not prevent long-term DIO, it did increase the levels of anti-inflammatory cytokine production and lipolysis protein. We further evaluated various doses of AfGAE in preventive and treatment models. As a result, our findings suggested that an AfGAE administration as a preventive model might be a better approach to achieve its anti-inflammatory and lipolysis-promoting effects in DIO mice. CONCLUSION: Although future studies to investigate the target materials such as polyphenols in AfGAE are required, the result suggests that GA without agar might be a therapeutic tool to improve health conditions related to inflammation.

The characteristics of the sulfur-doped $In_{1-x}Ga_xP$ Light emitting diode (Sulfur를 첨가한 $In_{1-x}Ga_xP$의 발광 다이오드 특성)

  • Cho, M.W.;Moon, D.C.;Kim, S.T.
    • Proceedings of the KIEE Conference
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    • 1988.11a
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    • pp.168-171
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    • 1988
  • The p-n homo junction diode of the III-V ternary alloy semiconductor $In_{1-x}Ga_xP$ : S grown by the temperature gradient solution (TGS) was fabricated by Zn-diffusion, and it's characteristics was investigated. The carrier concentration of $In_{1-x}Ga_xP$ doped with sulfur, 0.5 mol %, was $1{\times}10^{17}cm^{-3}$ and the mobility was varied with the composition. In the case that the diffusion time was constant as 30 minutes. The temperature dependence of diffusion coefficient was decreased from D= $4.2{\times}10^{-5}$ exp (-1.74/$k_{B}T$) to D= $2.5{\times}10^{-5}$ exp (-3.272/$k_{B}T$) with increasing of composition $\times$ from 0.43 to 0.98. The major peak of E.L spectrum was due to D-A pair recombination and the peak intensity was increased with the increasing of input current. And the E.L intensity was decreased with the increasing temperature, and shift to the long wavelength. The luminescence efficiencies measured at $5^{\circ}C$, atmosphere temperature, was decreased from $2.6{\times}10^{-4}$% to $9.49{\times}10^{-6}$ % with increasing of composition it from 0.39, direct transition region, to 0.98, indirect transition region.

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Effect of the Chizadochi-Tang on Hepatotoxicity of D-Galactosamine in Rats (D-Galactosamine으로 유발된 흰쥐의 간손상에 대한 치자두시탕 추출액이 미치는 영향)

  • Kim, Jin-Ho;Jeong, Jong-Kil
    • The Korea Journal of Herbology
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    • v.28 no.2
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    • pp.17-23
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    • 2013
  • Objectives : To investigate the hepatoprotective effect of Gardeniae Fructus (Ga) and Glycine semen preparatum (Gl) aqueous extract against D-galactosamine (D-GalN, 300mg/kg body weight) was administered to the male Sprague Dawley (SD) rats. Materials and Methods : The study was carried out on male SD rats (age matched, weight $250{\pm}10$ g). Experimental groups (Exp) divided four : Normal group (Nor) was administered saline, Control (Con) group was only received D-GalN (300 mg/kg) intraperitoneally. Exp was orally administered Ga (200 mg/kg; Ga group), Gl (700 mg/kg; Gl group), and Chizadochi-Tang (200 mg/kg+700 mg/kg, GG group) after D-GalN treatment during 14 days (n=6). Results : D-GalN administration induced hepatotoxicity in rats which was manifested by increased levels of aspartate aminotransferase (AST), alanine aminotransferase (ALT), alkaline phosphatase (ALP) and lactate dehydrogenase (LDH) but decreased total cholesterol (HDL C) and triglyceride (TG). The serum TG concentrations were significantly increased ($^{\sharp}p$ <0.05) in the Ga group compared with Con. AST and ALP activities were significantly decreased ($^{\sharp}p$ <0.05) in the all experimental groups compared with Con. ALT activities were significantly decreased ($^{\sharp}p$ <0.05) in the Ga group compared with Con. LDH activities were significantly decreased ($^{\sharp}p$ <0.05) in the GG group compared with Con. On the light microscopic study, a number of vacuole were observed in the Con, but decreased in experimental groups. Conclusion : Ga aqueous extract and Chizadochi-Tang extract possesses hepatoprotective potential, thus validating its use in alleviating toxic effects of D-GalN.

Formation of $P^+-Layer$ in GaAs Using the Open-Tube Diffusion of Zn (Open-Tube에서 Zn확산을 이용한 GaAs에의 $p^+$층 형성)

  • 심규환;강진영;민석기;한철원;최인훈
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.25 no.8
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    • pp.959-965
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    • 1988
  • Zinc diffusion characteristics and its applicabilities have been studied using an open-tube system. Thermal decomposition of arsenide(As) at gallium arsenide(GaAs) wafer surface was well inhibited by using Ga: poly-GaAs: Zn compositon as a diffusion source. Junction depth was obtained as 4.6x10**7\ulcorner exp)-1.25/kT) where activation energy of diffusion was 1.25eV. From Boltzmann-matano analysis, it could be identified that concentration dependencies of Zn diffusivity well consisted with those of kick-out model. The ideality factor of p+-n junction formed by Zn diffusion was about 1.6 and infrared light intensity was linearly varied in the range of sixty folds. It is concluded frodm these results that Zn diffuses according to kick-out model, and open-tube method is applicable to compound semiconductor devices.

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The Properties of Zn-diffusion in $In_{1-x}Ga_{x}p$. ($In_{1-x}Ga_{x}p$ 내에서 Zn 의 확산성질)

  • Kim, S.T.;Moon, D.C.;Suh, Y.S.
    • Proceedings of the KIEE Conference
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    • 1988.07a
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    • pp.353-355
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    • 1988
  • The properites of Zn-diffusion in III-V ternary alloy semiconductor $In_{1-x}Ga_{x}p$, which was grown by the temperature gradient solution (TGS) method, have been investigated. The composition, x, dependence of the Zn-diffusion coefficient at $850^{\circ}C$ and the activation energy for Zn-diffusion into $In_{1-x}Ga_{x}p$ were found to be $D850^{\circ}C$(x)= $3.935{\times}10^{-8}exp(-6.84{\cdot}x)$, and $E_{A}(x)=1,28+2,38{\cdot}x$, respectively. From this study, we confirm that the Zn-diffusion in $In_{1-x}Ga_{x}p$ was explainable with the diffusion mechanisms of the interstitial-substitutional, which was widely accepted mechanisms in the III-V binary semiconductors.

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Growth of GaAs Crystals by synthesis Solute Diffusion Method (합성 용질 확산법에 의한 GaAs결정 성장에 관하여)

  • 문동찬;정홍배;이영희;김선태;최영복
    • The Transactions of the Korean Institute of Electrical Engineers
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    • v.41 no.1
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    • pp.56-62
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    • 1992
  • The GaAs bulk crystals are grown by the Synthesis Solute Diffusion(SSD) method and its properties are investigated. The crystal growth rate at optimum condition is 0.28 cm/day and their temperature dependence is R(T) = 2.92 x 10S04T exp(-1.548eV/kS1BTT) [cmS02T/day.K]. Etch pits density distribution along radial direction is order of 10S04TcmS0-2T and 10S03TcmS0-2T at the edge and middle of the wafers, respectively, and it increased exponentially along vertical direction of ingot. Moreover,it is uniformly distributed as order of 10S03TcmS0-2T in radial direction of In doped GaAs. The carrier concentration and mobilities are measured to 0.34-2.1 x 10S016T cmS0-3T and 2.3-3.3x10S03T cmS02T/V.sec, respectively.

Effect of Harvest Time on Seed Quality of Silage Corn Inbreds and Hybrids

  • Lee, Suk-Soon;Yun, Sang-Hee;Soo, Jung-Moon;Min, Hwang-Kee;Ryu, Si-Hwan;Park, Jong-Yeol
    • KOREAN JOURNAL OF CROP SCIENCE
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    • v.47 no.5
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    • pp.361-367
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    • 2002
  • In order to determine the optimum harvest time for the seed production of inbreds and hybrids in silage corn, the ears of sib-pollinated 'KS5', 'KS7rhm', and 'Ga209' and cross-pollinated 'KS5' $\times$ 'KS6' (Suwon19), 'KS7 rhm' $\times$ 'KSl17' (Suwonok), and 'Ga209' $\times$ 'DB544'(Kwanganok) were harvested at the one-week intervals from 4 to 10 weeks after silking. The optimum harvest time for the seed production for 'KS5', 'KS5' $\times$ 'KS6', 'KS7 rhm', and 'KS7rhm' $\times$ 'KS117' was 7 weeks after silking considering both emergence rate and plumule growth in cold test. Although earlier harvested seeds showed similar germination rate as the seeds harvested at the optimum time at $25^{\circ}C$, their emergence rate were lower in cold test. Seed weight and $\alpha$-amylase activity of earlier harvested seeds were lower compared to those of seeds harvested at the optimum time, while leakage of total sugars and electrolytes were higher. However, the later harvested seeds showed lower germination rates at $25^{\circ}C$ and emergence rates in cold test probably due to the lower $\alpha$-amylase activity although they showed increased seed weight and reduced leakage of total sugars and electrolytes. In contrast, the emergence rate of 'Ga209' and 'Ga209' $\times$ 'DB544' in cold test increased up to 10 weeks after silking probably due to the increased seed weight and $\alpha$-amylase activity and reduced sugar and electrolyte leakages during the germination. The cross-pollinated F$_1$ hybrid seeds showed higher germination and emergence rates at $25^{\circ}C$ and in cold test, and higher plumule growth and $\alpha$-amylase activity compared to those of sib-pollinated inbreds.

On the Crystal Growth of Gap by Synthesis Solute Diffusion Method and Electroluminescence Properties. (합성용질확산법에 의한 GaP결정의 성장과 전기루미네센스 특성)

  • Kim, Seon-Tae;Mun, Dong-Chan
    • Korean Journal of Materials Research
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    • v.3 no.2
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    • pp.121-130
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    • 1993
  • The GaP crystals were grown by synthesis solute diffusion method and its properties were investigated. High quality single crystals were obtained by pull-down the crystal growing ampoule with velocity of 1.75mm/day. Etch pits density along vertical direction of ingot was increased from 3.8 ${\times}{10^4}$c$m^{-2}$ of the first freeze to 2.3 ${\times}{10^5}$c$m^2$ of the last freeze part. The carrier concentration and mobilities at room temperature were measured to 197.49cc$m^2$/V.sec and 6.75 ${\times}{10^{15}}$c$m^{-3]$, respectively. The temperature dependence of optical energy gap was empirically fitted to $E_g$(T)=[2.3383-(6.082${\times}{10^{-4}}$)$T^2$/(373. 096+TJeV. Photoluminescence spectra measured at low temperature were consist with sharp line-spectra near band-gap energy due to bound-exciton and phonon participation in band edge recombination process. Zn-diffusion depth in GaP was increased with square root of diffusion time and temperature dependence of diffusion coefficient was D(Tl = 3.2 ${\times}{10^3}$exp( - 3.486/$k_{\theta}$T)c$m^2$/sec. Electroluminescence spectra of p-n GaP homojunction diode are consisted with emission at 630nm due to recombination of donor in Zn-O complex center with shallow acceptors and near band edge emission at 550nm. Photon emission at current injection level of lower than 100m A was due to the band-filling mechanism.

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