• Transactions of the Society of Information Storage Systems
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• v.8 no.2
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• pp.56-60
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• 2012

Graphene oxide, which is exfoliated by oxidant from graphite, is the material for solving the problem of mass production and positioning. We made graphene oxide based devices by dielectrophoresis, studied and controlled factors which can affect the characteristic of graphene oxide channel. Graphene oxide channel assembled by dielectrophoresis can be constructed differently by various frequency options. We confirmed the change of gate characteristics and I-V characteristics in the range from 80K to 300K temperature.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.262-262
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• 2012

Modifications of graphenes have been studied for catalytic applications due to their advantages such as high surface area, conductivity and thermal stability. In this research, individual graphene oxide (GO) sheets were exfoliated from graphite using Hummers and Offeman method. Pd nano-particles were deposited on the GO surface using Pd2+ ion exchange where hydroxyl groups on the GO act as nucleation sites of Pd nanoparticles and their dispersions. The thermal treatments of the Pd-GO in H2 flow produced Pd-Graphene nanocomposites. Their catalytic performances in Sonogashira reaction were investigated. Morphological and chemical structures of the GO, Pd-GO, and Pd-Graphene were investigated using FT-IR, XRD, TEM, STEM, and XPS. The catalytic performances have been investigated using microwave reactor.

• Transactions of the Society of Information Storage Systems
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• v.9 no.1
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• pp.22-27
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• 2013

In this paper we are presenting a architecture of Co ion decorated graphene oxide as an electrode for supercapacitor application. Graphene oxide, which is exfoliated by oxidant from graphite, is the material for solving the problem of mass production and coating on the surface of working electrode. The $Co^{2+}$ ions are coated by using layer by layer(LBL) method on graphene oxide foam. The metal ion decorated graphene oxide shows enhanced capacitance performance when tested as supercapacitor electrode, showing the specific capacitance of $827Fg^{-1}$.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.490-490
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• 2011

Graphene, hexagonal network of carbon atoms forming a one-atom thick planar sheet, has been emerged as a fascinating material for future nanoelectronics. Huge attention has been captured by its extraordinary electronic properties, such as bipolar conductance, half integer quantum Hall effect at room temperature, ballistic transport over ${\sim}0.4{\mu}m$ length and extremely high carrier mobility at room temperature. Several approaches have been developed to produce graphene, such as micromechanical cleavage of highly ordered pyrolytic graphite using adhesive tape, chemical reduction of exfoliated graphite oxide, epitaxial growth of graphene on SiC and single crystalline metal substrate, and chemical vapor deposition (CVD) synthesis. In particular, direct synthesis of graphene using metal catalytic substrate in CVD process provides a new way to large-scale production of graphene film for realization of graphene-based electronics. In this method, metal catalytic substrates including Ni and Cu have been used for CVD synthesis of graphene. There are two proposed mechanism of graphene synthesis: carbon diffusion and precipitation for graphene synthesized on Ni, and surface adsorption for graphene synthesized on Cu, namely, self-limiting growth mechanism, which can be divided by difference of carbon solubility of the metals. Here we present that large area, uniform, and layer controllable graphene synthesized on Cu catalytic substrate is achieved by acetylene-assisted CVD. The number of graphene layer can be simply controlled by adjusting acetylene injection time, verified by Raman spectroscopy. Structural features and full details of mechanism for the growth of layer controllable graphene on Cu were systematically explored by transmission electron microscopy, atomic force microscopy, and secondary ion mass spectroscopy.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.157-157
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• 2011

Graphene has generated significant interest in the recent years as a functional material for electronics, sensing, and energy applications due to its unique electrical, optical, and mechanical properties. Much of the considerable interest in graphene stems from results obtained for samples mechanically exfoliated from graphite. Practical applications, however, require reliable and well-controlled methods for fabrication of large area graphene films. Recently high quality graphene layers were fabricated using chemical vapor deposition (CVD) on nickel and copper with methane as the source of the carbon atoms. Here, we report a simple and efficient method to synthesize graphene layers using solid carbon source. Few-layer graphene films are grown using filtered vacuum arc source (FVAS) technique by evaporation of carbon atom on Ni catalytic metal and subsequent annealing of the samples at 800$^{\circ}$C. In our system, carbon atoms diffuse into the Ni metal layer at elevated temperatures followed by their segregation as graphene on the free surface during the cooling down step as the solubility of carbon in the metal decrease. For a given annealing condition and cooling rate, the number of graphene layers is easily controlled by changing the thickness of the initially evaporated amorphous carbon film. Based on the Raman analysis, the quality of graphene is comparable to other synthesis methods found in the literature, such as CVD and chemical methods.

• Proceedings of the Materials Research Society of Korea Conference
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• 2012.05a
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• pp.90.2-90.2
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• 2012

Graphene has recently attracted significant attention because of its unique optical and electrical properties. For practical device applications, special attention has to be paid to the synthesis of high-quality graphene on large-area substrates. Graphene has been synthesized by eloborated mechanical exfoliation of highly oriented pyrolytic graphite, chemical reduction of exfoliated grahene oxide, thermal decomposition of silicon carbide, and chemical vapor deposition (CVD) on Ni or Cu substrates. Among these techniques, CVD is superior to the others from the perspective of technological applications because of its possibility to produce a large size graphene. PECVD has been demonstrated to be successful in synthesizing various carbon nanostructures, such as carbon nanotubes and nanosheets. Compared with thermal CVD, PECVD possesses a unique advantage of additional high-density reactive gas atoms and radicals, facilitating low-temperature, rapid, and controllable synthesis. In the current study, we report results in synthesizing of high-quality graphene films on a Ni films at low temperature. Controllable synthesis of quality graphene on Cu foil through inductively-coupled plasma CVD (ICPCVD), in which the surface chemistry is significantly different from that of conventional thermal CVD, was also discussed.

• Analytical Science and Technology
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• v.9 no.1
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• pp.43-51
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• 1996

We have discussed on the deintercalation process of Li-EaGICs and Li-EGICs synthesized under pressure and temperature by spontaneous oxidation reaction of those compounds based on the results of X-ray diffraction, thermal analysis and electrical specific resistivity analysis. According to the results of the X-ray analysis for the intercalation process, we have found that the stage 1 for Li-EaGICs and Li-EGICs were not completly formed, but their lower stages were formed mainly. And from this results of the deintercalation process, we have found that the deintercalation process did not occur any more after 4 weeks, and the Li-EGDICs have more residual lithium metals than LiEaGDICs between the graphite interlayers. According to the thermal decomposition analysis, Li-two compounds had included very hard exothermic reaction. And we have found that these compounds did not occrurred deintercalation reaction above $400^{\circ}C$. According to the results of the electrical specific resistivity measurements, Li-EGDICs have relatively lower electrical specific resistivity than Li-EaGDICs, and Li-EaGDICs showed a formation of the ideal curve. From these results, we can suggest that Li-EaGDICs have a better properties as an anode material secondary than Li-EGICs.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.10a
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• pp.16.2-16.2
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• 2011

Graphene has attracted significant attention due to its unique characteristics and promising nanoelectronic device applications. For practical device applications, it is essential to synthesize high-quality and large-area graphene films. Graphene has been synthesized by eloborated mechanical exfoliation of highly oriented pyrolytic graphite, chemical reduction of exfoliated grahene oxide, thermal decomposition of silicon carbide, and chemical vapor deposition (CVD) on metal substrates such as Ni, Cu, Ru etc. The CVD has advantages over some of other methods in terms of mass production on large-areas substrates and it can be easily separated from the metal substrate and transferred to other desired substrates. Especially, plasma-enhanced CVD (PECVD) can be very efficient to synthesize high-quality graphene. Little information is available on the synthesis of graphene by PECVD even though PECVD has been demonstrated to be successful in synthesizing various carbon nanostructures such as carbon nanotubes and nanosheets. In this study, we synthesized graphene on $Ni/SiO_2/Si$ and Cu plate substrates with CH4 diluted in $Ar/H_2$ (10%) by using an inductively-coupled PECVD (ICPCVD). High-quality graphene was synthesized at as low as $700^{\circ}C$ with 600 W of plasma power while graphene layer was not formed without plasma. The growth rate of graphene was so fast that graphene films fully covered on substrate surface just for few seconds $CH_4$ gas supply. The transferred graphene films on glass substrates has a transmittance at 550 nm is higher 94%, indicating 1~3 monolayers of graphene were formed. FETs based on the grapheme films transferred to $Si/SiO_2$ substrates revealed a p-type. We will further discuss the synthesis of graphene and doped graphene by ICPVCD and their characteristics.

• Korean Journal of Air-Conditioning and Refrigeration Engineering
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• v.25 no.3
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• pp.126-130
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• 2013

In this study, a shape-stabilized phase change material (SSPCM) was prepared by octadecane and exfoliated graphite nanoplate (xGnP) in a vacuum, to improve thermal storage performance. The octadecane as an organic phase change material (PCM) is very stable against phase separation of PCM, and has the proper temperature range for thermal comfort in the building; and the xGnP is a porous carbon nano-material. Scanning electron microscope (SEM) and Fourier transformation infrared spectrophotometer (FT-IR) were used to confirm the chemical and physical stability of the Ocatadecane/xGnP SSPCM. In addition, thermal properties were determined by Deferential scanning calorimeter (DSC), and Thermogravimetric analysis (TGA). The specific heat of Octadecane/xGnP SSPCM was $14.1J/g{\cdot}K$ at $31.3^{\circ}C$. The melting temperature ranges of melting and freezing were found to be $26{\sim}35^{\circ}C$ and $26{\sim}19^{\circ}C$, respectively. At this time, the latent heats of melting and freezing were 110.9 J/g and 104.5 J/g, respectively. The Octadecane was impregnated into xGnP by as much as about 56.0% of the Octadecane/xGnP SSPCM's mass fraction.

• Composites Research
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• v.29 no.3
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• pp.104-110
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• 2016

This paper reports a novel method for simultaneous exfoliation of graphene and dispersion of carbon nanotube by using intercalation method. In common, graphene flake and carbon nanotubes can be produced through individual exfoliation or debundling process, but the process require significant amount of time. Here, potassium sodium tartrate was thermally intercalated into graphite and carbon nanotube bundle for simultaneous exfoliation and dispersion of graphene and carbon nanotubes. We confirmed expansion of interlayer distance via XRD, and also found that oxidation level of the exfoliated materials were significantly low (below 8.3 at%). The produced materials are fabricated in to conductive composite film via vacuum filtration and spray deposition to show enhancement of conductive properties.