• Journal of Korean Vacuum Science & Technology
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• v.4 no.2
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• pp.41-43
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• 2000

We present a study of exciton relaxation in GaAs/AIGaAs quantum well structures by using time-resolved photoluminescence techniques.03 observed that light-hole exciton has a longer decay time than heavy-hole exciton, which results from the difference of the exciton population factor. We considered the thermal population time to explain the observed exciton dynamics.

• Journal of the Optical Society of Korea
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• v.10 no.4
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• pp.184-187
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• 2006

For resonant excitation of the ground state $1s^e-1S^h_{3/2}$, dynamics of 'the electron-hole pair in a CdSe quantum dot was investigated by degenerate pump-probe measurement. At low e-h pair densities, the decay of $1s^e-1S^h_{3/2}$ state is dominated by radiative recombination. As the number of the electron-hole pairs increases, new decay features become significant. Theoretical comparison suggests this is attributed to the bi-molecular and Auger-type scattering.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.119-119
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• 2010

We report strong exciton transition and exciton-phonon couplings in photoluminescence (PL) of ZnO thin films grown on MgO/sapphire (buffer/substrate) by plasma-assisted molecular beam epitaxy. The PL spectra at 10 K showed the intensity of the dominant emission, donor-bound exciton transition of front surface (top surface, the latter part in growth) is found to be about 100 times higher than that of back surface (in-depth bottom area, the initial part), while the room temperature PL spectra showed dominant contributions from the free exciton emissions and phonon-replicas of free excitons for front surface and back surface, respectively, It could be attributed to the strong contributions of exciton-phonon coupling. Time resolved PL spectra reveal that the life time of exciton recombination from the front surface are longer than those from back surface. This is most probably due to the fact that reduction of non-radiative recombination in the front surface. This investigation indicates that the existence of native defects or trap centers which can be reduced by the proper initial condition in growth and the exciton-phonon interaction couplings play an important role in optical properties and crystal quality of ZnO thin films.

• Proceedings of the Optical Society of Korea Conference
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• 1997.08a
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• pp.51-51
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• 1997

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.332.1-332.1
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• 2016

Application of magnetic fields is important to characterize the carrier dynamics in semiconductor quantum structures. We performed photoluminescence (PL) measurements from an InGaP-AlInGaP single quantum well under pulsed magnetic fields to 50 T. The zero field interband PL transition energy matches well with the self-consistent Poisson-Schr?dinger equation. We attempted to analyze the dimensionality of the quantum well by using the diamagnetic shift of the magnetoexciton. The real quantum well has finite thickness that causes the quasi-two-dimensional behavior of the exciton diamagnetic shift. The PL intensity diminishes with increasing magnetic field because of the exciton motion in the presence of magnetic field.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.1133-1135
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• 2009

The rolls of triplet excitons in a polymer based photovoltaic (PV) device are investigated for improving the efficiency of PV devices. Generally, the thick photo-absorbing layer can improve the PV device efficiency by increasing the photon absorption. However, in case of PV devices with singlet excitons, the efficiency is limited by the short exciton diffusion length, which depends on the mobility and lifetimes of excitons. Therefore, using the triplet excitons, which have a higher mobility and longer lifetime, can solve the problem of premature exciton dissociation caused by the shorter singlet exciton diffusion length in the thick photo-absorbing layer. In this study, the triplet exciton dynamics of a conjugated polymer in a phosphorescent dye blended polymer PV device is investigated by photo-induced absorption, and PV devices performance at various concentrations of phosphorescent dye are is also evaluated.

• Proceedings of the Optical Society of Korea Conference
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• 2006.02a
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• pp.95-96
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• 2006

• Applied Science and Convergence Technology
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• v.24 no.5
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• pp.156-161
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• 2015

Application of magnetic fields is important to characterize the carrier dynamics in semiconductor quantum structures. We performed photoluminescence (PL) measurements from an InGaP-AlInGaP single quantum well under pulsed magnetic fields to 50 T. The zero field interband PL transition energy matches well with the self-consistent Poisson-$Schr{\ddot{o}}dinger$ equation. We attempted to analyze the dimensionality of the quantum well by using the diamagnetic shift of the magnetoexciton. The real quantum well has finite thickness that causes the quasi-two-dimensional behavior of the exciton diamagnetic shift. The PL intensity diminishes with increasing magnetic field because of the exciton motion in the presence of magnetic field.

• Proceedings of the Optical Society of Korea Conference
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• 2009.02a
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• pp.327-328
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• 2009

• Bulletin of the Korean Chemical Society
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• v.24 no.8
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• pp.1081-1090
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• 2003

Two different electronically resonant two-dimensional spectroscopies are described. The first, two-color photon echo peak shift spectroscopy, is sensitive to correlations in transition frequency between the initial and probed (final) states. It provides new insight into the mechanism of ultrafast solvation and should prove useful for characterizing dynamics in inhomogeneous systems in general. The second technique, fifth order threepulse scattering, contains two coherence periods whose durations are controlled. The entire two-dimensional surface was recorded for a dye molecule in dilute solution and a photosynthetic light-harvesting complex. The data provide insight into the short-time dynamics of solvation and exciton relaxation, respectively.