• 세라미스트
• /
• 제21권2호
• /
• pp.29-37
• /
• 2018

In order to overcome the problems of existing low-dimensional materials (carbon nanotubes, graphene, transition metal dichalcogenides, etc) researches on new 1D materials have been studied. In the case of $LiMo_3Se_3$ and $Mo_6S_{9-x}I_x$, continuous researches have been carried out for 3D bulk synthesis and atomic scale dispersion. Recently, quantum confinement effect of $LiMo_3Se_3$ and bio-stability of $Mo_6S_{9-x}I_x$ have been proven and various applications have started to be studied. In addition, device application results using new 1D materials such as $Sb_2Se_3$ (optoelectronic devices using the property of effectively reducing exciton decay due to no dangling bond) and $VS_4$ (electrochemical energy storage using the space between 1-D nanostructures) have been reported very importantly. Therefore, it can be claimed that it has reached a very important time to find and synthesize new 1D materials and to report various characteristics not existing.

• Transactions on Electrical and Electronic Materials
• /
• 제6권3호
• /
• pp.115-118
• /
• 2005

Organic photovoltaic properties were studied in $CuPc/C_{60}$ and $ZnPc/C_{60}$ heterojunction structure by varying the organic layer thicknesses. Current density-voltage characteristics of organic photovoltaic cells were measured using Keithley 236 source-measure unit and a 500 W xenon lamp (ORIEL 66021) for a light source. From the analyses of current-voltage characteristics such as short-circuit current density, open-circuit voltage and power conversion efficiency, optimum thickness of the organic layer were obtained.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 1996년도 추계학술대회 논문집
• /
• pp.37-39
• /
• 1996

A hydride vapor phase epitaxy (HVPE) method was performed to prepare the GaN thick-films on c-plane sapphire substrates. The full-width at half maximum of double crystal X-ray rocking curve from 350${\mu}{\textrm}{m}$ thick GaN was 576 arcsecond. The photo- luminescence spectrum measured (at room temperature) show the narrow bound exciton(I$_2$) line and weak donor-acceptor pair recombination peak, however, there was not observed deep donor-acceptor pare recombination indicate the GaN crystals prepared in this study are of high purity and high crystalline quality.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
• /
• pp.640-640
• /
• 2013

본 연구에서는 유리 기판과 Si 기판에 Ag-doped ZnO 나노로드를 수열합성법을 이용하여 성장하였다. ZnO는 UV 영역에서 exciton 발광을 하며, 가시광선에서도 발광을 하는 것으로 알려져 있다. 그리고 Ag 금속은 입자형태로 ZnO 박막에 도포되었을 때 UV영역의 발광 세기를 강화시킨다는 사실이 알려져 있다. 이러한 내용을 바탕으로 ZnO 나노로드 합성 용액에 Ag powder의 양을 변화시켜 첨가하고, 유리와 Si기판을 넣고 80도에서 30분간 성장하였다. XRD, XPS를 통해 구조적 특성 변화를 보았고 SEM을 통해 나노로드의 형태를 확인하였다. 또한 PL, 투과도 측정을 통해 Ag 도핑에 따른 광학적 특성 변화를 확인하였다. SEM 측정으로 샘플의 단면을 확인한 결과 Ag 도핑 농도에 따른 차이가 거의 없음을 알았다. ZnO 나노로드가 성장된 유리 기판은 본래의 유리기판보다 투과도가 높았으며, Ag를 많이 첨가할수록 투과도가 낮아졌다.

• ETRI Journal
• /
• 제18권3호
• /
• pp.181-193
• /
• 1996

A blue light emitting device has been successfully fabricated using a polymer with regulated conjugation length containing trimethylsilyl substituted phenylenevinylene units. Electroluminescence from the device has an emission maximum at 470 nm. The device shows typical diode characteristics with operating voltage of 20 V and the light becomes visible at a current density of less than $0.5;mA/cm^2$. The electroluminescence spectrum is virtually identical with the photoluminescence spectrum, indicating that the radiation mechanisms are the same for both. A light emitting device using the blend of a large band gap polymer and a small band gap polymer was also fabricated. Light emission from the small band gap polymer shows much improved quantum efficiency, but there is no light emission from the large band gap polymer. Quantum efficiency of the blend increases up to about two orders of magnitude greater than that of the small band gap polymer with increasing proportion of the large band gap polymer. The improvement in quantum efficiency is interpreted in terms of exciton transfer and the hole blocking behaviour of the large band gap polymer. Finally, we have fabricated a patterned flexible light emitting device using the high quantum efficiency polymer blend system.

• 한국전기전자재료학회논문지
• /
• 제22권9호
• /
• pp.756-759
• /
• 2009

We described the growth of undoped ZnO thin films and their optical properties changing with a various growth temperature. The undoped ZnO thin films were grown on $c-Al_2O_3$ substrates using pulsed laser deposition (PLD) at room temperature, 200, 400, and $600^{\circ}C$, respectively. Field emission microscopy (FE-SEM) measurements showed that the grain size of undoped ZnO thin films are increasing as a increase of growth temperature. In addition, we were investigated that the structural and optical properties of undoped ZnO thin films by x-ray diffraction (XRD) and photoluminescence (PL) studied. Also, we could confirmed that the exciton luminescence was strongly related to charge trap by grain boundary of the samples using micro-PL measurement.

• 한국정보디스플레이학회:학술대회논문집
• /
• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권1호
• /
• pp.651-654
• /
• 2007

Anthracene derivatives, 9,10trimethylsilylanthr - acene(SA) and bis(2-phenylethynyl)trimethylsilyl anthracene(Si-BPEA) were synthesized and their emission properties were studied with UV and PL spectrometers. The PL maxima of anthracene, SA, bis(2-phenylethynyl)anthracene (BPEA), Si-BPEA were obtained at 401, 438, 475, 478nm, respectively. The electro-optical properties OLED devices made with these anthracene derivatives were discussed.

• 한국전기전자재료학회논문지
• /
• 제11권10호
• /
• pp.784-789
• /
• 1998

In this work, the optical properties of freestanding GaN single crystalline substrate grown by hydride vapor phase epitaxy(HVPE) were investigated. The low temperature PL spectrum in freestanding GaN consists of free and bound exciton emissions, and a deep DAP recombination around at 1.8eV. The optically-pumped stimulated emission in freestanding GaN substrate was observed at room temperature. At the maximum power density of 2MW/$\textrm{cm}^2$, the peak energy and FEHM of stimulated emission were 3.318 eV and 8meV, respectively. The excitation power dependence on the integrated emission intensity indicates the threshold pumping power density of 0.4 MW/$\textrm{cm}^2$.

• 한국공작기계학회논문집
• /
• 제11권6호
• /
• pp.111-117
• /
• 2002

The high quality and a nearly stoichometric growth of $Cd_{1-y} Zn_y$/Te(y＝0.04) epilayers have been successfully grown on GaAs substrate by hot wall epitaxy (HWE) by optimizing the growth condition including the preheating treatment and Cd reservoir temperature. The relationship between quality and thickness was examined and best value of FWHM from X-ray rocking curve of 121 arcsec are obtained. Also, emission peaks related to the recombination of free excitons such as the ground state and the first excited state were observed in the PL spectrum at 4.2K. The ($A^0$, X) emission related to Cd vacancy and deep level emission was not measured. These results indicated that the grown CZT/GaAs epilayer was high qualify and purity.

• 한국결정성장학회지
• /
• 제16권1호
• /
• pp.12-19
• /
• 2006

Metalorganic chemical vapor deposition (MOCYD) techniques have been applied to fabricate semiconducting ZnO thin films and nanostructures, which are promising for novel optoelectronic device applications using their unique multifunctional properties. The growth and characterization of ZnO thin films on Si and $SiO_2$ substrates by MOCYD as fundamental study to realize ZnO nanostructures was carried out. The precise control of initial nucleation processes was found to be a key issue for realizing high quality epitaxial layers on the substrates. In addition, fabrication and characterization of ZnO nanodots with low-dimensional characteristics have been investigated to establish nanostructure blocks for ZnO-based nanoscale device application. Systematic realization of self- and artificially-controlled ZnO nanodots on $SiO_2/Si$ substrates was proposed and successfully demonstrated utilizing MOCYD in addition with a focused ion beam technique.