• Journal of the Korean Chemical Society
• /
• v.48 no.3
• /
• pp.249-253
• /
• 2004

CdS semiconductor quantum dot (QD) structures in aqueous solution are fabricated by using a gamma-ray irradiation technique and their optical absorption spectra are investigated. Cadmium sulfate solution, 2-mercaptoethanol solution, and reducing agent $e^{-}_{aq}$ are employed to produce CdS molecules, leading to CdS quantum dots. The measured linear absorption spectra before and after g-ray irradiation clearly show exciton peaks between 300 nm and 400 nm, which indicate the formation of CdS QD's. It is also observed that the exciton peaks are red-shifted with increasing the g-ray irradiation time from 5 min to 15 min. Therefore, it is concluded that the mean QD sizes can be systematically controlled with the dosage of the g-ray irradiation.

• Proceedings of the Optical Society of Korea Conference
• /
• 2009.02a
• /
• pp.327-328
• /
• 2009

• Journal of the Korean Institute of Telematics and Electronics D
• /
• v.35D no.8
• /
• pp.44-52
• /
• 1998

The theoretical modeling of transition energy and absorption coefficient for intersubband transitions in quantum wells in presented. We include, as well as hartree and exchange-correlation potentials, boht depolarization effect and exciton-like effect which play great roles in heavily doped cases where practically reasonable absorption coefficients are available. Also, the calculated results are compared with the existing experimental values for .delta.-doped Si quantum wells to check the validity of our theoretical calculation.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2007.08b
• /
• pp.1203-1205
• /
• 2007

Confinement of charge carrier and exciton is the essential factor for enhancing the efficiency and stability of the electrophosphorescent devices. The interplay between the properties of emitters and other adjacent layers are studied based on the physical interpretation with difference of energy level, charge carrier mobility, and corresponding charge-trapping behavior.

• Bulletin of the Korean Chemical Society
• /
• v.7 no.2
• /
• pp.106-108
• /
• 1986

Exciton chirality method was applied for the determination of absolute configuration of panaxynol, a poly-yne compound from Panax ginseng roots for the first time. The circular dichroic spectra of panaxynol benzoates show the negative chirality at ${\lambda}_{ext}$, indicating the S configuration of C-3 chiral center.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.08a
• /
• pp.363-364
• /
• 2012

기존 양자점에 대한 연구는 레이저 다이오드와 광증폭기등과 같은 광소자의 활성층에 사용되던 양자우물을 대체하기 위하여 고밀도, 고균일 양자점 성장에 관한 연구가 활발히 진행되었지만, 최근에는 양자점을 이용한 Single-photon source의 관심이 높아짐에 따라 저밀도 양자점 성장에 관한 연구가 주목 받고 있다. 본 연구에서는 수직형 저압 Metal organic chemical vapor deposition (MOCVD)를 이용하여 InP 기판 위에 저밀도 InAs 양자점을 성장하였다. 저밀도의 양자점을 성장하기 위하여 양자점과 덮개 층($1.1 {\mu}m$ InGaAsP)사이에 V족 원료 가스인 As만 공급하는 성장 중단 시간 (GI:Growth interruption)을 삽입하였다. 시료의 구조는 InP (100)기판위에 50 nm InGaAsP barrier, 1.5ML GaAs를 성장 후 InAs 1.9 ML를 성장하였다. 그 후 0, 1, 2, 5 분의 GI을 삽입한 후 InGaAsP 와 InP 덮개층을 성장하였다. 양자점의 밀도와 형상을 측정하기 위하여 Atomic force microscopy (AFM)을, 광학적 특성 분석을 위하여 저온 Micro Photoluminescence (${\mu}$-PL)을 측정하였다. 성장 중단 시간의 증가에 따라 InAs/InP 양자점의 높이와 넓이는 증가하고 밀도는 감소하였다. 성장 중단 시간 3분 이후에는 밀도 감소가 둔화 되었으며, 5분일 때 $3.2{\times}10^7/cm^2$의 극저밀도 InAs/InP 양자점이 성장되었다. 또한 저밀도 양자점 시료의 저온 ${\mu}$-PL을 측정하여 단일 양자점의 exciton과 bi-exciton peak가 측정되었다.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2016.02a
• /
• pp.226-226
• /
• 2016

PHOLED devices which have the structure of ITO/HAT-CN(5nm)/NPB(50nm)/EML(30nm)/TPBi(10nm)/Alq3(20nm)/LiF(0.8nm)/Al(100nm) are fabricated to investigate the green emission profile in EML by using a gasket doping method. CBP and Ir(ppy)3 (2% wt) are co-deposited homogeneously as a background material of EML for green PHOLED, then a 5nm thickness of additionally doped layer by Ir(btp)2 (8% wt) is formed as a profiler of the green emission. The total thickness of the EML is maintained at 30nm while the distance of the profiler from the HTL/EML interface side (x) is changed in 5nm steps from 0nm to 25nm. As shown in Fig. 1, the green (513nm) peak from Ir(ppy)3 is not observed when Ir(btp)2 is also doped homogeneously because Ir(ppy)3 works as an gasket dopant of the Ir(btp)2 :CBP system. Therefore, in this experment, Ir(btp)2 can be used as a profiler of the green emission in CBP:Ir(ppy)3 system. The emission spectra from the PHOLED devices with different x are shown in Fig. 2. In this gasket doping system, stronger red peak means more energy transfer from green to red dopant or higher exciton density by green dopant. To find the green emission profile, the external quantum efficiency (EQE) at 3mA/cm2 for red peaks are calculated. More green light emission at near EML/HBL interface than that of HTL/EML is observed (insert of Fig. 2). This means that the higher exciton density at near EML/HBL interface in homogeneously doped CBP with Ir(ppy)3. As shown in Fig. 3, excitons can be quenched easily to HTL(NPB) because the T1 level of HTL(2.5eV) is relatively lower than that of EML(2.6eV). On the other hand, the T1 level of HBL(2.7eV) is higher than that of EML.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2016.02a
• /
• pp.225-225
• /
• 2016

PHOLED devices which have the structure of ITO/HAT-CN(5nm)/NPB(50nm)/EML(47nm)/TPBi(10nm)/Alq3(20nm)/LiF(0.8nm)/Al(100nm) are fabricated to investigate the diffusion length of the triplet exciton by using double-quantum-well(DQE) EML structure. To fabricate DQW structures, Ir(ppy)3(2% wt) and Ir(btp)2(8% wt) are used as green and red emission zones, respectively. In DQW structured EML, as shown in Fig. 1, 1nm thick layers of green and red emission zones are located middle of the EML, and the distance between these wells(x) is changed from 0nm to 10nm. As shown in Fig. 2, the emission spectra from DQW PHOLED devices are changed with different x. The intensity of the green emission(520nm) is decreased when x is decreased, and it goes to near zero when x=0nm. This behavior can be identified as the diffusion of the triplet excitons from Ir(ppy)3 to Ir(btp)2 by the Dexter energy transfer(DET). From the external quantum efficiency(EQE) of the red emission, as shown in Fig. 3, the diffusion length of the triplet excitons can be determined by the equation of DET rate, R=A Exp(-2RDA/L), where RDA is donor-acceptor distance and L is the sum of the van der Wals radii. As a result, the measured data of the red EQEs with different x are identified to theoretical result from the equation of DET rate(Fig. 4). From this results, we could confirm that the diffusion length of the triplet excitons can be determined by using DQW structure and this method is very useful to investigate the behavior of the excitons in PHOLEDs.

• Korean Journal of Materials Research
• /
• v.22 no.9
• /
• pp.489-493
• /
• 2012

Green phosphors $K_2BaW_2O_8:Tb^{3+}$(1.0 mol%) were synthesized by solid state reaction method. Differential thermal analysis was applied to trace the reaction processes. Three endothermic values of 95, 706, and $1055^{\circ}C$ correspond to the loss of absorbed water, the release of carbon dioxide, and the beginning of the melting point, respectively. The phase purity of the powders was examined using powder X-ray diffraction(XRD). Two strong excitation bands in the wavelength region of 200-310 nm were found to be due to the ${WO_4}^{2-}$ exciton transition and the 4f-5d transition of $Tb^{3+}$ in $K_2BaW_2O_8$. The excitation spectrum presents several lines in the range of 310-380 nm; these are assigned to the 4f-4f transitions of the $Tb^{3+}$ ion. The strong emission line at around 550 nm, due to the $^5D_4{\rightarrow}^7F_5$ transition, is observed together with weak lines of the $^5D_4{\rightarrow}^7F_J$(J = 3, 4, and 6) transitions. A broad emission band peaking at 530 nm is observed at 10 K, while it disappears at room temperature. The decay times of $Tb^{3+}$ $^5D_4{\rightarrow}^7F_5$ emission are estimated to be 4.8 and 1.4 ms, respectively, at 10 and 295 K; those of the ${WO_4}^{2-}$ exciton emissions are 22 and 0.92 ${\mu}s$ at 10 and 200 K, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2001.07a
• /
• pp.533-538
• /
• 2001

The ZnSe sample grown by chemical bath deposition (CBD) method were annealed in Ar gas at 450$^{\circ}C$ Using extrapolation method of X-ray diffraction pattern, it was found to have zinc blend structure whose lattice parameter a$\_$o/ was 5.6687 ${\AA}$. From Hall effect, the mobility was likely to be decreased by impurity scattering at temperature range from 10 K to 150 K and by lattice scattering at temperature range from 150 K to 29 3K. The band gap given by the transmission edge changed from 2.7005 eV at 293 K to 2.8739 eV at 10 K. Comparing photocurrent peak position with transmission edge, we could find that photocurrent peaks due to excition electrons from valence band, $\Gamma$$\_$8/ and $\Gamma$$\_$7/ to conduction band $\Gamma$$\_$6/ were observed at photocurrent spectrum. From the photocurrent spectra by illumination of polarized light on the ZnSe thin film, we have found that values of spin orbit coupling splitting Δso is 0.0981 eV. From the PL spectra at 10 K, the peaks corresponding to free bound excitons and D-A pair and a broad emission band due to SA is identified. The binding energy of the free excitons are determined to be 0.0612 eV and the dissipation energy of the donor -bound exciton and acceptor-bound exciton to be 0.0172 eV, 0.0310 eV, respectively.