• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.4-5
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• 2010

The surface phonon is defined as a coherent vibrational excitation of surface atoms propagating along the surface. It is characterized by a phonon dispersion curves, which were extensively studied in 1990's using helium atom scattering and high-resolution electron-energy-loss spectroscopy (HREELS)[1].The understanding is mainly based on the theoretical framework of a classical bond model or cluster calculations. The recent sample preparation and first principles calculations open the naval way to deep insight for surface phonon problems. The surface phonon dispersion on the hydrogen-terminated Si(111)-($1{\times}1$) surface [H:Si(111)] is the typical system and already reported experimentally [2] and theoretically [3], although the understandingis incomplete. The sample contaminated by the oxygen atoms on the surface and the calculations were also classical. In this study, firstly, we have prepared an ultra-clean H:Si(111) surface [4] and measured the surface phonon dispersion curvesusing HREELS. Secondly, we have performed first-principles density functional calculations with the projector augmented wave functionals, as implemented in VASP, using generalized gradient approximations. We used aslab of six silicon layers and both top and bottom surfaces were terminated with hydrogen atoms. Finally, we have compared with the surface phonon dispersion of deuterium-terminatedSi(111)-($1{\times}1$) surface[5] and led to our conclusions. The Si-H stretching and the bending modes are observed at 258.5 and 78.2 meV, respectively. These energies are the same as the previously reported values [2], but the energy-loss peaks at the lower energy regions are dramatically shifted. Through this combination study, we have formulated the procedure of preparing ultra-clean H:Si(111)/D:Si(111), which was confirmed by HREELS vibrational analysis. The Si surface will be utilized for further nano-physics research as well as for the materials for nano-fubrication.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.77-77
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• 2016

Thin films synthesized by plasma processes have been widely applied in a variety of industrial sectors. The structure control of thin film is one of prime factor in most of these applications. It is well known that the structure of this film is closely associated with plasma parameters and species of plasma which are electrons, ions, radical and neutrals in plasma processes. However the precise control of structure by plasma process is still limited due to inherent complexity, reproducibility and control problems in practical implementation of plasma processing. Therefore the study on the fundamental physical properties that govern the plasmas becomes more crucial for molecular scale control of film structure and corresponding properties for new generation nano scale film materials development and application. The thin films are formed through nucleation and growth stages during thin film depostion. Such stages involve adsorption, surface diffusion, chemical binding and other atomic processes at surfaces. This requires identification, determination and quantification of the surface activity of the species in the plasma. Specifically, the ions and neutrals have kinetic energies ranging from ~ thermal up to tens of eV, which are generated by electron impact of the polyatomic precursor, gas phase reaction, and interactions with the substrate and reactor walls. The present work highlights these aspects for the controlled and low-temperature plasma enhanced chemical vapour disposition (PECVD) of Si-based films like crystalline Si (c-Si), Si-quantum dot, and sputtered crystalline C by the design and control of radicals, plasmas and the deposition energy. Additionally, there is growing demand on the low-temperature deposition process with low hydrogen content by PECVD. The deposition temperature can be reduced significantly by utilizing alternative plasma concepts to lower the reaction activation energy. Evolution in this area continues and has recently produced solutions by increasing the plasma excitation frequency from radio frequency to ultra high frequency (UHF) and in the range of microwave. In this sense, the necessity of dedicated experimental studies, diagnostics and computer modelling of process plasmas to quantify the effect of the unique chemistry and structure of the growing film by radical and plasma control is realized. Different low-temperature PECVD processes using RF, UHF, and RF/UHF hybrid plasmas along with magnetron sputtering plasmas are investigated using numerous diagnostics and film analysis tools. The broad outlook of this work also outlines some of the 'Grand Scientific Challenges' to which significant contributions from plasma nanoscience-related research can be foreseen.

• 대한조선학회논문집
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• 제60권5호
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• pp.375-387
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• 2023

The subsea power cables are increasingly important for harvesting renewable energies as we develop offshore wind farms located at a long distance from shore. Particularly, the continuous flexural motion of inter-array dynamic power cable of floating offshore wind turbine causes tremendous fatigue damages on the cable. As the subsea power cable consists of the helical structures with various components unlike a mooring line and a steel pipe riser, the fatigue analysis of the cables should be performed using special procedures that consider stick/slip phenomenon. This phenomenon occurs between inner helically wound components when they are tensioned or compressed by environmental loads and the floater motions. In particular, Vortex-induced vibration (VIV) can be generated by currents and have significant impacts on the fatigue life of the cable. In this study, the procedure for VIV fatigue analysis of the dynamic power cable has been established. Additionally, the respective roles of programs employed and required inputs and outputs are explained in detail. Demonstrations of case studies are provided under severely sheared currents to investigate the influences on amplitude variations of dynamic power cables caused by the excitation of high mode numbers. Finally, sensitivity studies have been performed to compare dynamic cable design parameters, specifically, structural damping ratio, higher order harmonics, and lift coefficients tables. In the future, one of the fundamental assumptions to assess the VIV response will be examined in detail, namely a narrow-banded Gaussian process derived from the VIV amplitudes. Although this approach is consistent with current industry standards, the level of consistency and the potential errors between the Gaussian process and the fatigue damage generated from deterministic time-domain results are to be confirmed to verify VIV fatigue analysis procedure for slender marine structures.

• 분석과학
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• 제14권2호
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• pp.159-166
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• 2001

한외여과법을 이용하여 휴믹산(Aldrich Co.)을 분자량 별로 3개의 소부분($F_1$: 1,000-10,000 daltons; $F_2$: 10,000-50,000 daltons; $F_3$: 100,000-300,000 daltons)으로 분리한 뒤, 적외선 분광법과 고체상태 C-13 핵자기공명 분광법을 이용하여 각 소부분의 구조적 특성을 규명하였고, pH 적정법을 이용하여 각 소부분의 카르복실산 작용기 함량을 결정하였다. 휴믹산과 금속이온과의 착물 반응 특성을 규명하기 위하여, Eu(III)과 각 소부분 휴믹산과의 착화합물($[Eu(III)]=1.0{\times}10^{-4}mol\;L^{-1}$, $(HA)=470-970mg\;L^{-1}$, at pH 5.0)을 Eu(III)의 $^7F_0-{^5}D_0$ 전이를 이용한 여기 스펙트럼으로 관찰하였다. 적외선 스펙트럼과 C-13 핵자기공명 스펙트럼 분석 결과, 100,000 dalton 이상의 고분자량의 휴믹산 분자는($F_3$) 높은 지방족 탄소함량을 가지며, 50,000 daltons 이하의 저 분자량의 휴믹산($F_1$, $F_2$) 분자는 상대적으로 높은 방향족 탄소 함량을 가짐을 확인하였다. pH 적정 결과 휴믹산은 분자의 크기가 커질수록 더 낮은 카르복실기 함량을 가짐을 확인하였다. Eu(III)-휴믹산 착물의 여기스펙트럼을 Lorenzian-Gaussian 식을 이용하여 분석한 결과, 휴믹산 분자의 크기가 커질수록 최대피크의 파장 위치가 더 낮은 에너지 방향으로 이동하였다. 이러한 피크 이동의 결과는 휴믹산 분자의 크기가 커질수록 Eu(III)과 결합하는 분자내 카르복실산의 배위수가 증가함을 나타내는 것으로서, C-13 NMR 스펙트럼 분석에서 밝혀진 휴믹산 분자의 구조적인 요인과의 관련성을 밝혔다.