• Korean Journal of Optics and Photonics
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• v.7 no.4
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• pp.397-402
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• 1996

A compact excimer laser was developed with coaxial type which the one line cross flow fan is only used. At 1 kHz repetitive operation, average power of KrF laser is 56 watt. In this paper, Design parameter and CR characteristic are investigated for attainment of the compact 1 kHz excimer laser. We have obtained overall efficiency of 1.2% with KrF laser gas. At this time, CR and the variation of laser output are 2.97, $\pm$9%. Laser gas volume and active volume are 10 liter, 1.8(H)$\times$1.2(W)$\times$30(L)=64.8 ㎤, respectively.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.9
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• pp.623-627
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• 1999

We report a new in-situ fluorine passivation method without in implantation by employing excimer laser annealing of $SiO_{x}F_{y}$/a-Si structure and its effects on p-channel poly-Si TFTs. The proposed method doesn't require any additional annealing step and is a low temperature process because fluorine passivation is simultaneous with excimer-laser-induced crystallization. A in-situ fluorine passivation by the proposed method was verified form XPS analysis and conductivity measurement. From experimental results, it has been shown that the proposed method is effective to improve the electrical characteristics, specially field-effect mobility, and the electrical stability of p-channel poly-Si TFTs. The improvement id due to fluorine passivation, which reduces the trap state density and forms the strong Si-F bonds in poly-Si channel and $SiO_2/poly-Si$ interface. From these results, the high performance poly-Si TFTs canbe obtained by employing the excimer-laser-induced fluorine passivation method.

• Proceedings of the KSME Conference
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• 2002.08a
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• pp.353-356
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• 2002

Planar laser induced fluorescence(PLIF) has been widely used to obtain two dimensional fuel distribution. Preliminary investigation was performed to measure quantitative air excess ratio distribution in an engine fueled with LPG. It is known that fluorescence signal from acetone as a fluorescent tracer is less sensitive to oxygen quenching than other dopants. Acetone was excited by KrF excimer laser (248nm) and its fluorescence image was acquired by ICCD camera with a cut-of filter to suppress Mie scattering from the laser light. For the purpose of quantifying PLIF signal, an image processing method including the correction of laser sheet beam profile was suggested. Raw images were divided by each intensity of laser energy and profile of laser sheet beam. Inhomogeneous fluorescence images scaled with the reference data, which was taken by a calibration process, were converted to air excess ratio distribution. This investigation showed instantaneous quantitative measurement of planar air excess ratio distribution for gaseous fuel.

• Laser Solutions
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• v.11 no.1
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• pp.12-18
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• 2008

Laser micromachining is a promising technique to fabricate the micro-scale devices. However, there remains important challenges to reducethe redeposition of ablated materials around the laser irradiated zone and to get a smooth surface, especially for metal and semiconductor materials. To achieve the high-quality micromachined devices, various methods have been developed. Liquid-assisted micromachining can be a good solution to overcome the previously mentioned problems. During the laser ablation process, the liquid around the solid sample dramatically changes the ablation characteristics, such as ablation rate, surface profile, formation of debris, and so on. In this investigation, we conducted the laser micromachining of Si in various liquid environmental conditions, such as liquid types, liquid thickness. In addition, using nanoscale time-resolved shadowgraphy technique, we observed the ablation process in liquid environments to understand the mechanism of liquid-assisted laser micromachining.

• Laser Solutions
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• v.15 no.2
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• pp.1-5
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• 2012

Gelatin is used as a model for soft biological tissues in studying laser interaction with the soft tissues. In this work, we analyze the interaction between gelatin and excimer and Ti:Sapphire femtosecond laser under various conditions, especially by varying the laser, laser fluence and pulse number. The results show that swelling of the surface and ablation depth can be controlled by adjusting the process parameters.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.2
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• pp.324-331
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• 1995

The leakage current characteristics of the low temperature processed LDD structure poly-Si TFT is analyzed. The excimer laser technology was applied to the recrystallization process of poly-Si film and the maximum processing temperature was retained under 600.deg.C. From the fabricated LDD space 0.3.mu.m to 3$\mu$m, the best on/off current ration could be obtained with the 1.3$\mu$m LDD space. And the threshold voltage did not increase more than 4V over 0.8$\mu$m LDD space. The characteristics of leakage current was compared to non-LDD structure TFT to analyze the mechanism of leakage current. Consequently, it could be concluded that the leakage current is strongly affected by the trap states as well as high electric field between gate and drain.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1995.11a
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• pp.148-151
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• 1995

Excimer laser has been used to fabricate superconducting YBa$_2$Cu$_3$O$\sub$7-x/(YBCO) thin films on various substrates. An XeCl excimer laser with an wavelength of 308 nm was used to deposit both buffer layer and superconducting thin film on sapphire substrate. The characterizations of the interface between thin film and substrate were performed. The interfacial properties of thin films on buffered sapphire and on bare sapphire were compared. With a 20 nm PrBa$_2$Cu$_3$O$\sub$7-x/(PBCO) buffer layer, no diffusion layer was observed between film and substrate while the diffusion layer with about 30 nm thickness was observed between film and sapphire without buffer layer.

• Journal of Information Display
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• v.1 no.1
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• pp.25-28
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• 2000

We propose a new in-situ fluorine passivation of poly-Si TFTs using excimer laser annealing to reduce the trap state density and improve reliability significantly. To investigate the effect of an in-situ fluorine passivation, we have fabricated fluorine-passivated p-channel poly-Si TFTs and examined their electrical characteristics and stability. A new in-situ fluorine passivation brought about an improvement in electrical characteristic. Such improvement is due to the formation of stronger Si-F bonds than Si-H bonds in poly-Si channel and $SiO_2$/Poly-Si interface.

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 1999.11a
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• pp.58-63
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• 1999

In order to analyze the discharge-pumped KrF excimer laser, computer simulation code is developed. On the other hand, the electron velocity distribution in a discharge plasma, measured by the Thomson scattering method, showed the Maxwellian, while the code predicted non-Maxwellian. This disagreement was solved by introducing the electron-electron collision into the simulation code. We also developed a simulation code on the CO2 laser-heated plasma in high-pressure Ar gas, and estimated the formation process of Ar2 excimer. The code predicted the possibility of the Ar2 laser action at 126 nm.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.129-130
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• 2008

Polycrystalline silicon (poly-Si) Schottky barrier thin film transistors (SB-TFT) are fabricated by erbium silicided source/drain for n-type SB-TFT. High quality poly-Si film were obtained by crystallizing the amorphous Si film with excimer laser annealing (ELA) or solid phase crystallization (SPC) method. The fabricated poly-Si SB-TFTs have a large on/off current ratio with a low leakage current. Moreover, the electrical characteristics of poly-Si SB TFTs are significantly improved by the additional forming gas annealing in 2 % $H_2/N_2$, because the interface trap states at the poly-Si grain boundaries and at the gate oxide/poly-Si channel decreased.