• 제목/요약/키워드: Excimer Laser Crystallization

검색결과 67건 처리시간 0.032초

Excimer Laser응용 실리콘 결정화 공정에 대한 In-Situ 광학적 연구 (An In-Situ Optical Study on Silicon Crystallization Process Using an Excimer Laser)

  • 김우진;윤창환;박승호;김형준
    • 대한기계학회:학술대회논문집
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    • 대한기계학회 2003년도 춘계학술대회
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    • pp.1407-1411
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    • 2003
  • Due to the heat confinement in the shallow region of the target for a short time scale, pulsed laser annealing has received increasing interest for the fabrication of poly-Si thin film transistors(TFTs) on glass as a low cost substrate in the flat panel displays. The formation and growth mechanisms of poly silicon(poly-Si) grains in thin films are investigated using an excimer laser crystallization system. To understand the crystallization mechanism, the grain formations are observed by FESEM analysis. The optical reflectance and transmittance during the crystallization process are measured using HeNe laser optics. A two-step ELC(Excimer Laser Crystallization) process is applied to enhance the grain formation uniformity.

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비정질 실리콘의 ELC 공정에 대한 광학적 연구 (An Optical Study on ELC Process of Amorphous Silicon)

  • 김우진;윤창환;박승호;김형준
    • 한국레이저가공학회지
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    • 제6권2호
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    • pp.9-17
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    • 2003
  • Due to the heat confinement in the shallow region of the target for a short time scale, pulsed laser annealing has received an increasing interest for the fabrication of poly-Si thin film transistors(TFTs) on glass as a low cost substrate in the flat panel displays. The formation and growth mechanisms of poly silicon(poly-Si) grains in thin films are investigated using an excimer laser crystallization system. To understand the crystallization mechanism, the grain formations are observed by FESEM photography. The optical reflectance and transmittance during the crystallization process are measured using HeNe laser optics. A two-step ELC(Excimer Laser Crystallization) process is applied to enhance the grain formation uniformity.

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Excimer Laser Annealing 결정화 방법 및 고유전 게이트 절연막을 사용한 poly-Si TFT의 특성 (Characteristics of poly-Si TFTs using Excimer Laser Annealing Crystallization and high-k Gate Dielectrics)

  • 이우현;조원주
    • 한국전기전자재료학회논문지
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    • 제21권1호
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    • pp.1-4
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    • 2008
  • The electrical characteristics of polycrystalline silicon (poly-Si) thin film transistor (TFT) crystallized by excimer laser annealing (ELA) method were evaluated, The polycrystalline silicon thin-film transistor (poly-Si TFT) has higher electric field-effect-mobility and larger drivability than the amorphous silicon TFT. However, to poly-Si TFT's using conventional processes, the temperature must be very high. For this reason, an amorphous silicon film on a buried oxide was crystallized by annealing with a KrF excimer laser (248 nm)to fabricate a poly-Si film at low temperature. Then, High permittivity $HfO_2$ of 20 nm as the gate-insulator was deposited by atomic layer deposition (ALD) to low temperature process. In addition, the solid phase crystallization (SPC) was compared to the ELA method as a crystallization technique of amorphous-silicon film. As a result, the crystallinity and surface roughness of poly-Si crystallized by ELA method was superior to the SPC method. Also, we obtained excellent device characteristics from the Poly-Si TFT fabricated by the ELA crystallization method.

ELA 결정화와 SPC 결정화를 이용한 쇼트키 장벽 다결정 실리콘 박막 트랜지스터 (Schottky barrier Thin-Film-Transistors crystallized by Excimer laser annealing and solid phase crystallization method)

  • 신진욱;최철종;조원주
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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    • pp.129-130
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    • 2008
  • Polycrystalline silicon (poly-Si) Schottky barrier thin film transistors (SB-TFT) are fabricated by erbium silicided source/drain for n-type SB-TFT. High quality poly-Si film were obtained by crystallizing the amorphous Si film with excimer laser annealing (ELA) or solid phase crystallization (SPC) method. The fabricated poly-Si SB-TFTs have a large on/off current ratio with a low leakage current. Moreover, the electrical characteristics of poly-Si SB TFTs are significantly improved by the additional forming gas annealing in 2 % $H_2/N_2$, because the interface trap states at the poly-Si grain boundaries and at the gate oxide/poly-Si channel decreased.

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Excimer-Laser Crystallization for Low-Temperature Polycrystalline Si TFTs

  • Kim, Hyun-Jae
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2000년도 제1회 학술대회 논문집
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    • pp.151-152
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    • 2000
  • For excimer laser crystallization (ELC), energy density, number of pulses, beam uniformity, and condition of initial amorphous Si (a-Si) films are significant factors contributing the final microstructure and the performance of low-temperature polycrystalline Si TFTs. The process and equipment have been achieved a significant improvement, but still, environmental factors associated with initial amorphous Si (a-Si) films and process conditions need to be optimized.

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Recent advances in excimer-laser-based crystallization for active-matrix displays

  • Turk, Brandon A.;Herbst, Ludolf;Simon, Frank;Paetzel, Rainer
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권1호
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    • pp.12-15
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    • 2007
  • Excimer-laser-based crystallization is ideallysuited for forming crystalline Si films on glass substrates for use in active-matrix displays. In this paper, we will report on recent and significant technical advances in light sources and beam delivery systems targeted at enabling ultra-uniform mura-free low-temperature polycrystalline silicon active-matrix backplanes while simultaneously lowering production costs and increasing throughput.

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Effective Annealing and Crystallization of Si Film for Advanced TFT System

  • Noguchi, Takashi
    • Journal of Information Display
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    • 제11권1호
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    • pp.12-16
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    • 2010
  • The effect of the crystallization and activated annealing of Si films using an excimer laser and the new CW blue laser are described and compared with furnace annealing for application in advanced TFTs and for future applications. Pulsed excimer laser annealing (ELA) is currently being used extensively as a low-temperature poly-silicon (LTPS) process on glass substrates as its efficiency is high in the ultra-violet (UV) region for thin Si films with thickness of 40-60 nm. ELA enables extremely low resistivity relating to high crystallinity for both the n- and p-type Si films. On the other hand, CW blue laser diode annealing (BLDA) enables the smooth Si surface to have arbitral crystal grains from micro-grains to an anisotropic huge grain structure only by controlling its power density. Both annealing techniques are expected to be applied in the future advanced TFT systems.

New High Stability Excimer Laser for LTPS Manufacturing

  • Herbst, Ludolf;Paetzel, Rainer;Simon, Frank;Fechner, Burkhard
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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    • pp.540-543
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    • 2006
  • LTPS TFT backplanes for AM OLED displays have advantages in regard to reliability and performance compared to TFT backplanes based on amorphous silicon. However, the requirements for homogeneous laser crystallization during LTPS process are much higher than for LCD backplanes. Most important is the energy stability of the laser source. In this paper we describe a new excimer laser which meets the requirements of LTPS manufacturing process with high homogeneity.

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Excimer laser annealing of sol-gel derived PZT thin films

  • 도영호;강민규;오승민;강종윤;윤석진
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2010년도 하계학술대회 논문집
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    • pp.20-20
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    • 2010
  • The effect of excimer laser annealing on the structural and dielectric behaviors of $PbZr_{0.52}Ti_{0.48}O_3$ (PZT) thin films has been investigated. The amorphous PZT thin films were prepared on Pt/Ti/$SiO_2$/Si substrates by a sol-gel method. The PZT precursor was prepared from lead acetate, zirconium acetylacetonate, and titanium isopropoxide. The starting materials were dissolved in n-propanol and 1,3-propanediol. After, the amorphous PZT thin films were laser-annealed (using KrF excimer laser) as a function of the laser energy density and the number of laser pulse. Structural properties of PZT thin films are characterized by using X-ray diffraction (XRD) and scanning electron microscopy (SEM). The dielectric characterization was done on a RT66A test system and a Agilent 4294A impedance analyzer. The PZT thin films show that excimer laser irradiation drastically improved the crystallization and dielectric properties of the PZT thin films, depending on the energy density and the pulse number.

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