• Proceedings of the Materials Research Society of Korea Conference
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• 한국재료학회 2009년도 추계학술발표대회
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• pp.31.1-31.1
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• 2009

In an approach to acclimate ourselves torecent ecological consciousness trend, a lead-free piezoelectric material, bismuth sodium titanate (abbreviated as BNT) based bismuth sodium barium titanate (abbreviated as BNT-BT), was considered as an environment-friendly alternative for a lead based piezoelectric system. Ceramic specimens of0.94[(BixNa0.5)TiO3]-0.06[BaTiO3] (x = 0.500~0.515) compositions were prepared by a modified mixed oxide method. To increase the chemical homogeneity andre action activity, high energy mechanical milling machine and pre-milled nanosized powder has been used. In this method (BixNa0.5)TiO3 (x=0.500~0.515) andBaTiO3 were prepared separately from pre-milled constituent materials at low calcination temperature and then separately prepared BNTX (X=1, 2, 3 and 4) and BT were mixed by high energy mechanical milling machine. Without further calcination step the mixed powders were pressed into disk shape and sintered at $1110^{\circ}C$. Microstructures, phase structures and electrical properties of the ceramic specimens were systematically investigated. Highly dense ceramic specimens with homogenous grains were prepared in spite of relatively low sintering temperature. Phase structures were not significantly influenced by the excess amount Bi. Large variation on the piezoelectric and dielectric properties was detected at relative high excess Bi amounts. When $x{\leq}0.505$, the specimens exhibit insignificant variation in piezoelectric and dielectric constant though depolarization temperature is found to be decreased. Considerable amount of decrease in piezoelectric and dielectric properties are observed with higher excess of Bi amounts ($x{\geq}0.505$). This research indicates the advantages of high energy mechanical milling and importance of proper maintenance of Bi stoichiometry.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• 제27권6호
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• pp.372-376
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• 2014

We investigated the effect of excess CuO on the sintering behavior, ferroelectric, and piezoelectric properties of lead-free $Bi_{0.5}(Na_{0.82}K_{0.18})_{0.5}TiO_3$ (BNKT) ceramics. The addition of excess CuO was found to greatly contribute to the densification and grain growth, however, excess CuO over 3 mol% was precipitated at grain boundaries after sintering. BNKT with 1~2 mol% CuO in excess sintered at $975^{\circ}C$ showed piezoelectric properties comparable to those of unmodified BNKT sintered at $1,175^{\circ}C$. These results seem meaningful for its application to low cost multilayer actuators (MLAs) because low firing ceramics make it possible to apply less expensive base metals to the inner electrode of MLAs.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 한국전기전자재료학회 1988년도 춘계학술대회 논문집
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• pp.3-6
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• 1988

Electrical and magnetic properties of $Y_1Ba_2Cu_3O_7-y$ sintered with $Bi_2O_3$ have been investigated by levitation experiment and the measurement of electrical resistivity. The effects of $Bi_2O_3$ addition on the microstructure of the sintered specimens were also investigated. The electrical resistivity in the normal state is smaller in $Y_{0.85}Bi_{0.15}Ba_2Cu_3O_{7-y}$, where the Bi is substituted into Y site, than in the basic compound $Y_1Ba_2Cu_3O_{7-y}$ due to improved microstructure. On the other hand, the microstructure is poor and electrical resistivity is larger in the $Y_1Ba_2Cu_3O_{7-y}$ sintered with excess $Bi_2O_3$. It appears that the impurity in grain boundary affect the electrical properties significantly but has little effect on the magnetic property.

• Proceedings of the Materials Research Society of Korea Conference
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• 한국재료학회 1998년도 IUMRS-ICEM ABSTRACT BOOK
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• pp.136.3-136
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• 1998

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
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• pp.851-856
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• 2003

We have investigated the material and electrical properties of $Bi_{4-x}La_xTi_3O_{12}$ (BLT) ferroelectric thin film for ferroelectric nonvolatile memory applications of capacitor type and single transistor type. The 120nm thick BLT films were deposited on $Pt/Ti/SiO_2/Si$ and $SiO_2/Nitride/SiO_2$ (ONO) substrates by the sol-gel spin coating method and were annealed at $700^{\circ}C$. It was observed that the crystallographic orientation of BLT thin films were strongly affected by the excess Bi content and the intermediate rapid thermal annealing (RTA) treatment conditions regardeless of two type substrates. However, the surface microstructure and roughness of BLT films showed dependence of two different type substrates with orientation of (111) plane and amorphous phase. As increase excess Bi content, the crystallographic orientation of the BLT films varied drastically in BLT films and exhibited well-crystallized phase. Also, the conversion of crystallographic orientation at intermediate RTA temperature of above $450^{\circ}C$ started to be observed in BLT thin films with above excess 6.5% Bi content and the rms roughness of films is decreased. We found that the electrical properties of BLT films such as the P-V hysteresis loop and leakage current were effectively modulated by the crystallographic orientations change of thin films.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 한국분말야금학회 2006년도 Extended Abstracts of 2006 POWDER METALLURGY World Congress Part2
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• pp.1232-1233
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• 2006

To co-fire with commercial LTCC (Low Temperature Co-fired Ceramic) materials at $850^{\circ}C{\sim}880^{\circ}C$, different contents of $B_2O_3$ were added to the $Bi_2O_3-ZnO-Nb_2O_5$ (BZN) ceramics. According to the test results, the cubic phase of BZN was transformed into orthorhombic in all the test materials. $BiNbO_4$ phase was formed in test materials with $2{\sim}5wt%$ of $B_2O_3$ addition. The phase transformation of cubic BZN was controlled during the synthesis process with excess ZnO content. The Cubic and orthorhombic phases of BZN could coexist and be sintered densely at $850^{\circ}C/2hr$.

• Journal of the Korean Ceramic Society
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• 제37권8호
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• pp.787-791
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• 2000

Samples with the nominal composition, Bi2-xGexSr2CaCu2O8＋$\delta$ (x=0, 0.1, 0.2, 0.3, 0.4, 0.5) were prepared by the solid-state reaction method. We have studied the effect of substitution Ge for Bi and investigated the superconducting properties by changing oxygen content with Ge substitution. It was found that temperature difference, ΔK, between TCon and TCzero was considerably smaller in the samples prepared by the intermediate pressing method than that in the samples by the solid-state reaction method. We found the solubility limit of Ge to the 80 K single phase was around x=0.3. Within the solubility limit, lattice constant c decreased with the increase of x. In the region of the 80K single phase, the onset critical temperature TCon increased and excess oxygen content decreased with increase of x.

• Korean Journal of Crystallography
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• 제11권2호
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• pp.95-101
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• 2000

Ferroelectric SrBi2Ta2O9 (SBT) thin films of Pt/Ti/SiO2 electrode were fabricated using a sintered SBT target with various Bi2O3 content by rf magnetron sputtering. Good hysteresis loop characteristics were observed in the SBT thin films deposited with 50mol% excess Bi target. SBT thin films crystallized from 650℃ however, good hysteresis loop can be obtained in the film annealed above 700℃. pt/TiO2/SiO2 and Pt/SiO2 electrodes were also used to investigate the Pt electrode dependence of SBT thin films. SBT thin films showed random oriented polycrystalline structure and similar morphology regardless of electrodes with quite different surface morphology. A 0.2㎛ thick SBT film annealed at 750℃ exhibited the remanent polarization (2Pr) of μC/㎠ and coercive voltage(Vc) of 1V at an applied voltage of 5V.

• Journal of the Korean Ceramic Society
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• 제34권2호
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• pp.202-208
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• 1997

Bi-layered SrBi2Ta2O9(SBT) films were deposited on Pt/Ti/SiO2/Si sibstrates by rf magnetron sputt-ering at room temperature and then were annealed at 75$0^{\circ}C$, 80$0^{\circ}C$ and 85$0^{\circ}C$ for 1 hour in oxygen at-mosphere. The film composition of SrBi2Ta2O9 was obtained after depositing at room temperature and annealing at 80$0^{\circ}C$. Excess 20mole% Bi2O3 and 30 mole% SrCO3 were added to the target to compensate for the lack of Bi and Sr in SBT film. 200 nm thick SBT film exhibited and dense microstructure, adielectric constant of 210, and a dissipation factor of 0.05 at 1 MHz frequency. The films exhibited Curie temperature of 32$0^{\circ}C$ and a dielectric constant of 314 at that temperature under 100 kHz frequency. The remanent polarization(2Pr) and the coercive field(2Ec) of the SBT films were 9.1 $\mu$C/$\textrm{cm}^2$ and 85 kV/cm at an applied voltage of 3V, resspectively and the SBT film showed a fatigue-free characteristics up to 1010 cy-cles under 5V bipolar pulse. The leakage current density of the SBT film was about 7$\times$10-7A/$\textrm{cm}^2$ at 150 kV/cm. Fatigue-free SBT films prepared by rf magnetron sputtering can be suitable for application to non-volatile memory device.

• Korean Journal of Materials Research
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• 제9권8호
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• pp.849-853
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• 1999

In the study, superconducting properties of $Bi_2$-x(sub)$LSr_2$Ca(sub)1+x(sub)$LCu_2$O(sub)8+d (x(sub)L=0, 0.05, 0.1, 0.2) films prepared by the LPE method was investigated. The peak decompositions of Sr3d and Ca2p XPS spectra, together with the EPMA results, elucidated the occupancies of Bi, Sr and Ca atoms on the SrO- and Ca-layers. The lattice parameter c monotonically increased with increasing x(sub)L for $0\leq$x(sub)L$\leq$0.2. The superconducting critical temperature T(sub)c showed a maximum value around x(sub)L=0.1. The x(sub)L dependence of the superconducting critical temperature T(sub)c and the lattice parameter c are explained by the changes of the excess oxygens in the BiO-layer. Since distribution and deficiency of the atoms in SrO-layer have influenced on superconducting properties and crystal structure.