• Title/Summary/Keyword: Excess properties

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Effect of Excess ZnO on Microwave Dielectric Characteristics of Ba(${Zn}_{1/3}{Ta}_{2/3}$)$O_3$ Ceramics (ZnO의 과잉첨가가 Ba(${Zn}_{1/3}{Ta}_{2/3}$)$O_3$세라믹스의 마이크로파 유전특성에 미치는 영향)

  • 이두희;윤석진;박창엽
    • The Transactions of the Korean Institute of Electrical Engineers
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    • v.43 no.4
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    • pp.613-619
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    • 1994
  • Dielectric properties of Ba(ZnS11/3TTaS12/3T)OS13T+x ZnO(x=0, 0.4, 0.8, 1.0 wt%) ceramics have been investigated at microwave frequencies. With excess ZnO, the sinterability was improved and the dielectric constant($\varepsilon$S1rT) and the unloaded quality factor(QS1UT) were increased. The structure changed into hexagonal from pseudocubic as being annealed at 140$0^{\circ}C$ in excess ZnO composition. Also, the temperature coefficient of the resonant frequency ($\tau$S1fT) turned into (-)ppm/$^{\circ}C$ when sintered at 155$0^{\circ}C$ for 2 hours. But the specimen sintered in ZnO muffling showed increased density and $\varepsilon$S1rT but lowerde QS1uT. Among the specimen investigated, expecially the composition added with 0.4wt% excess ZnO showed the most optimum dielectric values ($\varepsilon$S1rT=28, QS1uT x f=120000GHz) better than those of original Ba(ZnS11/2T TaS12/3T)OS13T ceramics.

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Comparison of 1-g and Centrifuge Model Tests on Liquefied Sand Grounds (액상화 지반에 대한 1-g 모형실험과 원심모형실험의 비교 연구)

  • Kim, Sung-Ryul;Hwang, Jae-Ik;Ko, Hon-Yim;Kim, Myoung-Mo
    • Proceedings of the Earthquake Engineering Society of Korea Conference
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    • 2006.03a
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    • pp.97-104
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    • 2006
  • The centrifuge and 1-g shaking table tests were performed simultaneously to compare the dynamic behaviors of loose sands of same geotechnical properties. The prototype soils were 10 m thick liquefiable loose sands. The geometric scaling factors were 20 for 1-g and 40 for centrifuge tests. The excess pore pressure, surface settlement, and acceleration in the soil were measured at the same locations in the 1-g and centrifuge tests. The total excess pore pressure from development to dissipation was measured. In the centrifuge test, viscous fluid was used as the pore water to eliminate the time scaling difference between dynamic time and dissipation time. In the 1-g tests, the steady state concept was applied to determine the unit weight of the model soil, and two different time scaling factors were applied for the dynamic time and the dissipationtime. It is concluded that the 1-g tests can simulate the excess pore pressure of the prototype soil if the permeability of the model soil is small enough to prevent dissipation of excess pore pressure during shaking and the dissipation time scaling factor is properly determined.

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Microstructure and Dielectric Properties in $30Pb(Mg_{1/3}Nb_{2/3})O_3-20PbTiO_3-50Pb(Mg_{1/2}W_{1/2})O_3$ Ceramics with Excess MgO Addition (MgO가 과잉첨가된 $30Pb(Mg_{1/3}Nb_{2/3})O_3-20PbTiO_3-50Pb(Mg_{1/2}W_{1/2})O_3$계 세라믹스의 미세구조와 유전특성)

  • 길영배;이응상
    • Journal of the Korean Ceramic Society
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    • v.34 no.1
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    • pp.31-36
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    • 1997
  • The effects of 0 to 10mol% excess MgO addition on the microstructure and dielectric properties in 30Pb(Mg1/3Nb2/3)O3-20PbTiO3-50Pb(Mg1/2W1/2)O3 ternary system were investigated. Samples were prepared by mixed oxide and precursor methods to compare the role of excess MgO. Excess MgO enhanced grain growth and increased dielectric constant. The dielectric constant and tesmperature dependence of dielectric constant of the sample sintered at 100$0^{\circ}C$ with 5mol% MgO were above 5,000 and +25% to -50% from - 55$^{\circ}C$ to 1$25^{\circ}C$, respectively. For these specimens the phases percent were mainly perovskite and Pb2WO5, which was confirmed by XRD analysis. Also the amount of cubic pyrochlore Pb3Nb4O13 and PbWO4 were de-creased with sintering temperature and MgO addition. BSE image showed the chemical inhomogeneous dis-tribution. Crystal phase formed at each sintering temperature and the chemical inhomogeneous distribution caused the decrease of the temperature dependence of dielectric constant.

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The Effect of Ba and Fe Concentration on Soft Magnetic Properties of Z-Type Barium Ferrite (Z-Type 바리움 페라이트 분말의 연자성 특성에 미치는 Ba 및 Fe 농도의 영향)

  • Cho, Kwang-Muk;Nam, In-Tak
    • Journal of the Korean Magnetics Society
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    • v.19 no.1
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    • pp.12-16
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    • 2009
  • Z-type barium ferrite [($Ba_{3}Co_{0.8}Zn_{1.2}Fe_{24}O_{41}$, $Ba_{3+{\delta}}Co_{0.8}Zn_{1.2}Fe_{24}O_{41}$ ${\delta}$ = 3, 5, 7, 13 wt%. $Ba_{3}Co_{0.8}Zn_{1.2}Fe_{24+{\delta}}O_{41}$ ${\delta}$ = 5, 7, 10 wt% )] were synthesized using co-precipitation method. The microstructure and magnetic properties of synthesized particles were investigated. In all prepared particles M-type Ba ferrite is identified with Z-type Ba ferrite together. It is found that particles having 7 wt% for Ba and 5 wt% for Fe excess addition revealed high saturation magnetization, respectively. All synthesized particles showed relatively high coercivity for device application. This result may be attributed to the contribution of M-type Ba ferrite. Ba and Fe excess addition was not affected to the structural change of CoZnZ Ba ferrite. The certain amount of excess additions of Ba and Fe and the 2 step heat-treatment may be beneficial to the improvement of soft magnetic properties of Z-type barium hexa-ferrite

Effect of RF Powers on the Electro·optical Properties of ZnO Thin-Films (RF 출력이 ZnO 박막의 전기·광학적 특성에 미치는 영향)

  • Shin, Dongwhee;Byun, Changsob;Kim, Seontai
    • Korean Journal of Materials Research
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    • v.22 no.10
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    • pp.508-512
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    • 2012
  • ZnO thin films were grown on a sapphire substrate by RF magnetron sputtering. The characteristics of the thin films were investigated by ellipsometry, X-ray diffraction (XRD), atomic force microscopy (AFM), photoluminescence (PL), and Hall effect. The substrate temperature and growth time were kept constant at $200^{\circ}C$ at 30 minutes, respectively. The RF power was varied within the range of 200 to 500 W. ZnO thin films on sapphire substrate were grown with a preferred C-axis orientation along the (0002) plan; X-ray diffraction peak shifted to low angles and PL emission peak was red-shifted with increasing RF power. In addition, the electrical characteristics of the carrier density and mobility decreased and the resistivity increased. In the electrical and optical properties of ZnO thin films under variation of RF power, the crystallinity improved and the roughness increased with increasing RF power due to decreased oxygen vacancies and the presence of excess zinc above the optimal range of RF power. Consequently, the crystallinity of the ZnO thin films grown on sapphire substrate was improved with RF sputtering power; however, excess Zn resulted because of the structural, electrical, and optical properties of the ZnO thin films. Thus, excess RF power will act as a factor that degrades the device characteristics.

A Statistical Model for the Ultra-Wide Bandwidth Indoor Apartment Channel (실내 아파트 환경에서의 통계적 UWB 채널 모델)

  • Park Jin-Hwan;Lee Sang-Hyup;Bang Sung-Il
    • Journal of the Institute of Electronics Engineers of Korea TC
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    • v.42 no.9 s.339
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    • pp.19-28
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    • 2005
  • We establish a statistical model for the ultra-wide bandwidth (UMB) indoor channel based on over 2000 frequency response measurements campaign in a Practical apartment. The approach is based on the investigation of the statistical properties of the multipath profiles measured in different place with different rooms. Based on the experimental results, a characterization of the propagation channel from theoretic view point is described. Also we describe a method for measurement of the channel impulse response and channel transfer function. Using the measured data, the authors compares channel impulse responses obtained from time-domain and channel transfer functions obtained from frequency-domain with statistical path loss model. The bandwidth of the signal used in this experiment is from 10MHz to 8.01 GHz. The time-domain results such as maximum excess delay, men excess delay and ms delay spread are presented. As well as, omni-directional biconical antenna were used for transmitter and receiver In addition, measurements presented here support m channel model including the antenna characteristics.