• Title/Summary/Keyword: Excess holes

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Improved Efficiency and Lifetime for Organic Light-emitting Devices based on Mixed-hole Transporting Layer (혼합된 정공 수송 층을 이용한 유기발광소자의 효율 및 수명 개선)

  • Seo, Jl-Hyun;Park, Jung-Hyun;Park, Il-Hong;Kim, Jun-Ho;Kim, Young-Kwan
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.20 no.3
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    • pp.257-262
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    • 2007
  • Organic light-emitting diodes (OLEDs) with the high efficieney and long lifetime are of growing interest in next-generation displays. Among the factors influencing OLEDs properties, one of unstable factor is $Alq_3$ cationic species caused by the excess holes resided in $Alq_3$ layer. Therefore, we suppressed the accumulation of excess holes by using the mixed-hole transporting layer (MHTL) of NPB and CBP in multilayer green OLEDs. The devices with MHTL showed improved characteristics in the luminous efficiency and lifetime. More characteristics and the carrier transport mechanism will be discussed.

Improved Efficiency and Lifetime for Organic Light-Emitting Devices Based on Mixed-Hole Transporting Layer (혼합된 정공 수송 층을 이용한 유기발광소자의 효율 및 수명 개선)

  • Seo, Ji-Hyun;Park, Jung-Hyun;Kim, Jun-Ho;Kim, Young-Kwan
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2006.06a
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    • pp.67-68
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    • 2006
  • Organic light-emitting devices (OLEDs) with the high efficiency and long lifetime are of growing interest in next-generation displays. Among the factors influencing OLEDs properties, one of unstable factor is $Alq_3$ cationic species caused by the excess holes resided in $Alq_3$ layer. Therefore, we suppressed the accumulation of excess holes by using the mixed-hole transporting layer (MHTL) of NPB and CBP in multilayer green OLEDs. The devices with MHTL showed improved characteristics in the luminance efficiency and lifetime. More characteristics and the carrier transport mechanism will be discussed.

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Stbilization of Perovskite Phase and Enhanced DPT Characteristics of $Pb(Zn, Mg)_{1/3}Nb_{2/3}O_3-PbTiO_3$ Ceramics by the Additionof Excess Constituent Oxides ($Pb(Zn, Mg)_{1/3}Nb_{2/3}O_3-PbTiO_3$계에서 구성 산화물 첨가에 따른 Perovskite상 안정화 및 DPT성 증대 효과)

  • 이규만;장현명;유병두
    • Journal of the Korean Ceramic Society
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    • v.30 no.11
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    • pp.925-932
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    • 1993
  • The perovskite phase in PZN-PMN-PT (Pb(Zn, Mg)1/3Nb2/3O3-PbTiO3) pseudoternary ceramics was stabilized by the addition of excess constituent divalent oxides (PbO, MgO and ZnO). The excess addition of 5mol% MgO or 7.5mol% PbO fully stabilized the perovskite phase. The enhanced diffuse phase transition (DPT) and the decrease in the electrical resistivity observed in the presence of excess ZnO or MgO were interpreted in terms of the additional formation of negatively charged, short-range ordered 1:1 domains with a concomitant generation of charge carriers, holes.

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Effect of the LiF anode interfacial layer on polymer light emitting diodes

  • Sohn, Sun-Young;Lee, Dae-Woo;Park, Keun-Hee;Jung, Dong-Geun;Kim, H.M.;Manna, U.;Yi, J.
    • 한국정보디스플레이학회:학술대회논문집
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    • 2005.07b
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    • pp.1056-1058
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    • 2005
  • Electrical and optical characteristics of MEH-PPV-based PLEDs with the LiF anode interfacial layer were investigated. The maximum luminance efficiency of the device with a LiF anode interfacial layer of 1-nm-thick was 3.0 lm/W, which is higher than 1.97 lm/W of the device without a LiF layer. By inserting LiF, excess injected holes from ITO anode can be blocked and hence the recombination ratio of electrons and holes can be increased in the emitting layer to improve device efficiency.

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Study on The Salinization in Groundwater of the Eastern Area of Cheju Island (제주도 동부지역 지하수의 염수화에 관한 연구)

  • 김지영;오윤근;류성필
    • Journal of Environmental Science International
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    • v.10 no.1
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    • pp.47-58
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    • 2001
  • According to the results of the groundwater quality investigation about 230 holes all over the country, the groundwater which was in excess of standard grows larger every year and closed holes increased to 23,457 holes in 1997 from 15,724 holes in 1996. This is the major reasons that water quality contamination, shortage of water quantity, increasing of salinity and so on. There are 7 groundwater salinization sources which are condisered as most important on a regional level. And among theses the Cheju Island groundwater salinization sources are (1) halite solution, (2) natural saline groundwater, (3) sea-water intrusion. The method of taking an isotopes is one of research methods of the origin of groundwater salinization and is used in so many studies because it has very high confidence. $^{18O}O, ^2H, ^3H, ^{14}C$ and so on in an isotopes are frequently used in the method of them. Consequently on this study we analyzed major ions and $^3H$ in groundwater, sea-water and rain of the eastern part of cheju island known as contaminated site from long time ago to examine the origin of groundwater salinization. Relation ratios of the major ions versus chloride ion shows similar tendency to sea-water. This indicates that sea-water entered the groundwater layer. And amount of $^3H$ in holes of the land side is higher than of the sea side. Relation of chloride ion versus $^3$H indicates negative character. Therefore we can think that the reason of groundwater salinization of this part is natural saline groundwater and halite solution by relation.

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The Characteristices of the 4,4',4'-trifluoro-triazine as a hole Blocking Material in Electroluminescent Devices (전계발광 소자에서 정공 차단 물질로서의 4,4',4'-trifluoro-triazine의 특성)

  • Shin, Ji-Won;Shin, Dong-Muyng;Sohn, Byoung-Chung
    • Journal of the Korean Applied Science and Technology
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    • v.17 no.2
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    • pp.120-125
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    • 2000
  • The tfTZ(4,4',4''-trifluoro-triazine) was used as a hole blocking material for the electroluminescent devices(ELDs) in this study. In general, the holes are outnumbered the electrons in hole transport and emitting layers because the hole transport is more efficient in most organic ELDs. The hole blocking layer are expected to control the excess holes to increase the recombination of holes and electrons and to decrease current density. The former study using the 2,4,6-triphenyl-1,3,5-triazine(TTA) as hole blocking layer showed that the TTA did not form stable films with vapor deposition technique. The tfTZ can generate stable evaporated films, moreover the fluorine group can lower the highest occupied molecular orbital(HOMO) level, which produces the energy barrier for the holes. The tfTZ has high electron affinities according to the data by the Cyclic-Voltammety(CV) method, which is developed for the measurement of HOMO and lowest occupied molecular orbital(LUMO) level of organic thin films. The lowered HOMO level is made the tfTZ to be applied for a hole blocking layer in ELDs. We fabricated multilayer ELDs with a structure of ITO/hole blocking layer(HBL)/hole transporting layer(HTL)/emitting layer/electrode. The hole blocking properties of this devices is confirmed from the lowered current density values compared with that without hole blocking layer.

A Study on the Development of Dewatering Mold Form for Performance Improvement of Concrete (콘크리트 성능개선을 위한 탈수거푸집공법의 실용화 연구)

  • Woo Kwang-Min;Lee Hak-Ki
    • Korean Journal of Construction Engineering and Management
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    • v.4 no.4 s.16
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    • pp.88-95
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    • 2003
  • Dewatering mold form get many holes on the surface to drain excessive water from combine concrete. While fiber is adhered to the forms inter surface, that makes it possible to improve concrete workability by draining excess water through the holes. We can expect the outer layer to solidify and to compact and get improvement of concretes durability. Maybe, it is valuable enough that dewatering mold form is put to practical use. On this study, the purpose is to obtain fundamental data for effective dewatering mold and properties of exposed concrete with the form, and ultimately, is to propose practical theory.

Annealing Behaviors of Wsix Film Formed by LPCVD (저압 화학 증착된 WSix 박막의 열처리에 따른 거동)

  • Lee, Jae-Ho;Im, Ho-Bin
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1988.05a
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    • pp.52-55
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    • 1988
  • Tunsten silicide (WSix) films on polycrystalline silicon were formed by low-pressure chemical vapor deposition (LPCVD) and were annealed in $N_2$ for 30 mins at various temperatures. The annealing behaviors of tungsten silicide films have been investigated by electrical resistivity measurements, X-ray diffraction methods, scanning electron microscopy (SEM) and Hall measurements. The electrical resistivity decreased almost linearly with increasing annealing temperature and reached $35{\mu}{\Omega}-cm$ at $1000^{\circ}C$ annealing. The X-ray and SEM analyses indicate that crystallization of $WSi_2$ and grain growth occurs when annealed above $1000^{\circ}C$. Excess silicon redistribution occurs considerably when annealed above $1000^{\circ}C$. By Hall measurements, the carrier type for specimens annealed at $1000^{\circ}C$ was found to be positive holes, while the carriers were electrons in the specimens that were annealed at $800^{\circ}C$.

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Preparation of the mixed oxide photocatalyst and its quantum yield. (Mixed oxide 광촉매의 제조 및 광분해 효율 평가)

  • Kim, Dong H.;Lee, Tai K.;Kim, Kyung N.;Chungmoo Auh;Kim, Kwang B.;Lee, Seung W.
    • Proceedings of the Korea Society for Energy Engineering kosee Conference
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    • 1995.05a
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    • pp.45-52
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    • 1995
  • The photocatalytic activity of TiO$_2$ was investigated as a function of added amount of Nb$_2$O$_{5}$, heat treatment temperature and the decomposition rate of 1 mM dichloroacetic acid(DCA). Mixed oxides of TiO$_2$ and Nb$_2$O$_{5}$ was prepared by the sol-gel process. The addition of Nb$_2$O$_{5}$ into TiO$_2$ has deleterious effect on the decomposition rate of DCA, which was decreased as the amount of Nb$_2$O$_{5}$ was increased. The excess electrons due to the doping of Nb$_2$O$_{5}$ into TiO$_2$ can promote the reduction process instead of oxidation or recombination rate with electron holes. The most efficient photocatalyst was the one heat treated at 40$0^{\circ}C$ for an hour as far as the heat treatment temperature is concerned. The lower the pH of the solution, the higher the quantum yield.tum yield.

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Metal Surface Treatment Effects on Screen Printed Silicon Solar Cells

  • Chakrabarty K.;Mangalaraj D.;Kim K. H.;Dhungel S. K.;Park J. H.;Singh S. N.
    • Transactions on Electrical and Electronic Materials
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    • v.4 no.4
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    • pp.22-25
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    • 2003
  • High series resistance due to the presence of glass frit is one of the major problems for screen printed silicon solar cells. Cells having electrical parameters below the prescribed values are usually rejected during solar module fabrication. Therefore, it is highly desirable to improve the electrical parameters of the silicon solar cells and thereby to increase the overall production yield. It was observed that, the performance of low quality mono-crystalline silicon solar cells made by standard screen printing technology could be improved remarkably by novel surface treatment. We have chemically treated the surface using sodium hydroxide (NaOH) and silver nitrate ($AgNO_3$) solutions. NaOH treatment helps to reduce the series resistance by decreasing the presence of excess glass frit on the top silver grid contact. The $AgNO_3$ treatment is used to reduce the series resistance comes from the deposition of silver on the grids by filling the holes present (if any) within the grid pattern.