• Asian-Australasian Journal of Animal Sciences
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• v.31 no.2
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• pp.230-236
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• 2018

Objective: Two ex vivo experiments were conducted to verify the effect of barley grain (Nusrat cultivar) treated with alkaline compounds (AC) including alum, ammonium, and sodium hydroxide or cation-exchanged organic extracts (OE) prepared from alfalfa hay, sugar beet pulp and Ulva Fasciata, on extent and digestion of starch. Methods: In the first study, the in vitro first order disappearance kinetic parameters of dry matter (DM), crude protein (CP) and starch were estimated using a non-linear model ($D_{(t)}=D_{(i)}{\cdot}e^{(-k_d{\cdot}time)}+I$, where: $D_{(t)}$ = potentially digestible residues at any time, $D_{(i)}$ = potentially digestible fraction at any time, $k_d$ = fractional rate constant of digestion (/h), I = indigestible fraction at any time). In the second experiment, the ruminal and post-ruminal disappearance of DM, CP, and starch were determined using in situ mobile nylon bag. Results: Barley grains treated with alum and alfalfa extract had a higher constant rate of starch digestion (0.11 and 0.09/h) than others. Barley grain treated with OE had a higher constant rate of CP digestion and that of treated with AC had a higher constant rate of starch digestion (0.08 and 0.11/h) compared with those of the other treatments. The indigestible fraction of starch treated with alum and sugar beet pulp extract was higher than that of the control group (0.24 and 0.25 vs 0.21). Barley grain treated with AC and OE had significant CP disappearance in the rumen, post-rumen and total tract, and also starch disappearance for post-rumen and total tract compared with the untreated (p<0.001). Conclusion: This study demonstrated that AC and OE might have positive effects on the starch degradation of the barley grain. In addition, treating barley grain with alum and sugar beet pulp extract could change the site and extend digestion of protein and starch.

• Korean Journal of Plant Taxonomy
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• v.37 no.2
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• pp.115-129
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• 2007

Using internal transcribed spacer (ITS) sequences and inter-simple sequence repeats (ISSRs) data, genetic diversity of a rare species, Hibiscus hamabo Siebold & Zucc. was examined for 3 populations in Jeju Island, Korea. A total of 14 nucleotide (excluding 3 ambiguous nucleotide) site variation in the ITS was observed from 18 individuals (Population 1, Hadori), which differed up to 13 bp in pair-wise comparison. On the contrary, the ITS sequences of all individuals in Populations 2 and 3 were identical. Genetic diversity estimates including Nei's gene diversity (h) generated by ISSR data were substantially high in Population 1 compared to other two populations. Low genetic variation in Populations 1 and 2 is considered due to genetic drift (bottleneck effect) and limited gene flow in these populations. Considering the differences in genetic diversity, protection of the Population 1(Hadori) is very critical for in situ conservation of Hibiscus hamabo in Korea. If ex situ conservation is required, making the full use of Population 1 will be most efficient.

• Korean Journal of Plant Resources
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• v.33 no.4
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• pp.303-310
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• 2020

This study was conducted on propagation use for conservation scheme of a threatened plant; Wikstroemia ganpi (Sieb. et Zucc.) Maxim(Geomundo false ohelo). The seed propagation was showed higher (95%) in storage and lower values in ground and cutting. Softwood cutting was higher than hardwood cutting and it was possessing higher ratio of rooting that increase concentration of IBA and NAA. It was determined that for Geomundo false ohelo seedling was effective than cutting. In-situ and ex-situ conservation and restoration of substitute habitats of Geomundo false ohelo is therefore necessary due to human trampling in the habitats, damage, natural selection, loss and suppression.

• Korean Journal of Plant Taxonomy
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• v.43 no.3
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• pp.236-243
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• 2013

Many plant species in subalpine regions are under threat of extinction as a result of climate change. In this study, the genetic diversity and geographic differentiation of three regions and six populations of Primula farinosa subsp. modesta (Bisset & Moore) Pax in Korea were assessed using the ISSR (Inter Simple Sequence Repeat) marker. The average genetic diversity (P = 60.62, SI = 0.299, h = 0.190) was relatively lower than that of other long-lived perennials, even though it is a self-incompatible species. AMOVA analysis showed that 50% of the total genetic diversity was partitioned among regions and Bayesian cluster analysis showed some remarkable geographic trends that were structured into 2 or 3 regions, suggesting limited gene flow among regions. Considering the population fragmentation, low level genetic diversity, and high genetic differentiation, it is essential to establish in situ and ex situ conservation strategies for P. farinosa subsp. modesta.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.115-115
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• 1999

GaN는 직접천이형 wide band gap(3.4eV) 반도체로서 청색/자외선 발광소자 및 고출력 전자장비등에의 응용성 때문에 폭넓게 연구되고 있다. 이러한 넓은 분야의 응용을 위해서는 열 적으로 안정된 Ohmic contact을 반드시 실현되어야 한다. n-type GaN의 경우에는 GaN계면에서의 N vacancy가 n-type carrier로 작용하기 때문에 Ti, Al, 같은 금속을 접합하여 nitride를 형성함에 의해서 낮은 접촉저항을 갖는 Ohmic contact을 하기가 쉽다. 그러나 p-type의 경우에는 일 함수가 크고 n-type와 다르게 nitride가 형성되지 않는 금속이 Ohmic contact을 할 가능성이 많다. 시료는 HF(HF:H2O=1:1)에서 10분간 초음파 세척을 한 후 깨끗한 물에 충분히 헹구었다. 그런 후에 고순도 Ar 가스로 건조시켰다. Pd와 Ni은 열적 증착법(thermal evaporation)을 사용하여 p-GaN에 상온에서 증착하였다. 현 연구에서는 열처리에 의한 Pd의 clustering을 줄이기 위해서 wetting이 좋은 Ni을 Pd 증착 전과 후에 삽입하였으며, monchromatic XPS(x-ray photoelectron spectroscopy) 와 SAM(scanning Auger microscopy)을 사용하여 열처리 전과 40$0^{\circ}C$, 52$0^{\circ}C$ 그리고 695$0^{\circ}C$에서 3분간 열처리 후의 온도에 따른 morphology 변화, 계면반응(interfacial reaction) 및 벤드 휨(band bending)을 비교 연구하였다. Nls core level peak를 사용한 band bending에서 Schottky barrier height는 Pd/Ni bi-layer 접합시 2.1eV를, Ni/Pd bi-layer의 경우에 2.01eV를 얻었으며, 이는 Pd와 Ni의 이상적인 Schottky barrier height 값 2.38eV, 2.35eV와 비교해 볼 때 매우 유사한 값임을 알 수 있다. 시료를 후열처리함에 의해 52$0^{\circ}C$까지는 barrier height는 큰 변화가 없으나, $650^{\circ}C$에서 3분 열처리 후에 0.36eV, 0.28eV 만큼 band가 더 ？을 알 수 있었다. Pd/Ni 및 Ni/Pd 접합시 $650^{\circ}C$까지 후 열 처리 과정에서 계면에서 matallic Ga은 온도에 비례하여 많은 양이 형성되어 표면으로 편석(segregation)되어지나, In-situ SAM을 이용한 depth profile을 통해서 Ni/Pd, Pd/Ni는 증착시 uniform하게 성장함을 알 수 있었으며, 후열처리 함에 의해서 점차적으로 morphology 의 변화가 일어나기 시작함을 볼 수 있었다. 이는 $650^{\circ}C$에서 열처리 한후의 ex-situ AFM을 통해서 재확인 할 수 있었다. 이상의 결과로부터 GaN에 Pd를 접합 시 심한 clustering이 형성되어 Ohoic contact에 문제가 있으나 Pd/Ni 혹은 Ni/Pd bi-layer를 사용함에 의해서 clustering의 크기를 줄일 수 있었다. Clustering의 크기는 Ni/Pd bi-layer의 경우가 작았으며, $650^{\circ}C$ 열처리 후에 barrier height는 Pd/Ni bi-layer의 경우에도 Ni의 영향을 받음을 알 수 있었다.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.122-122
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• 1999

Graphite with its advantages of high thermal conductivity, low thermal expansion coefficient, and low elasticity, has been widely used as a structural material for high temperature. However, graphite can easily react with oxygen at even low temperature as 40$0^{\circ}C$, resulting in CO2 formation. In order to apply the graphite to high temperature structural material, therefore, it is necessary to improve its oxidation resistive property. Silicon Carbide (SiC) is a semiconductor material for high-temperature, radiation-resistant, and high power/high frequency electronic devices due to its excellent properties. Conventional chemical vapor deposited SiC films has also been widely used as a coating materials for structural applications because of its outstanding properties such as high thermal conductivity, high microhardness, good chemical resistant for oxidation. Therefore, SiC with similar thermal expansion coefficient as graphite is recently considered to be a g행 candidate material for protective coating operating at high temperature, corrosive, and high-wear environments. Due to large lattice mismatch (~50%), however, it was very difficult to grow thick SiC layer on graphite surface. In theis study, we have deposited thick SiC thin films on graphite substrates at temperature range of 700-85$0^{\circ}C$ using single molecular precursors by both thermal MOCVD and PEMOCVD methods for oxidation protection wear and tribological coating . Two organosilicon compounds such as diethylmethylsilane (EDMS), (Et)2SiH(CH3), and hexamethyldisilane (HMDS),(CH3)Si-Si(CH3)3, were utilized as single source precursors, and hydrogen and Ar were used as a bubbler and carrier gas. Polycrystalline cubic SiC protective layers in [110] direction were successfully grown on graphite substrates at temperature as low as 80$0^{\circ}C$ from HMDS by PEMOCVD. In the case of thermal MOCVD, on the other hand, only amorphous SiC layers were obtained with either HMDS or DMS at 85$0^{\circ}C$. We compared the difference of crystal quality and physical properties of the PEMOCVD was highly effective process in improving the characteristics of the a SiC protective layers grown by thermal MOCVD and PEMOCVD method and confirmed that PEMOCVD was highly effective process in improving the characteristics of the SiC layer properties compared to those grown by thermal MOCVD. The as-grown samples were characterized in situ with OES and RGA and ex situ with XRD, XPS, and SEM. The mechanical and oxidation-resistant properties have been checked. The optimum SiC film was obtained at 85$0^{\circ}C$ and RF power of 200W. The maximum deposition rate and microhardness are 2$mu extrm{m}$/h and 4,336kg/mm2 Hv, respectively. The hardness was strongly influenced with the stoichiometry of SiC protective layers.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.181.2-181.2
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• 2014

A single-layer graphene has been uniformly grown on a Cu surface at elevated temperatures by thermally processing a poly (methyl methacrylate) (PMMA) film in a rapid thermal annealing (RTA) system under vacuum. The detailed chemistry of the transition from solid-state carbon to graphene on the catalytic Cu surface was investigated by performing in-situ residual gas analysis while PMMA/Cu-foil samples being heated, in conjunction with interrupted growth studies to reconstruct ex-situ the heating process. We found that the gas species of mass/charge (m/e) ratio of 15 ($CH_3{^+}$) was mainly originated from the thermal decomposition of PMMA, indicating that the formation of graphene occurs with hydrocarbon molecules vaporized from PMMA, such as methane and/or methyl radicals, as precursors rather than by the direct graphitization of solid-state carbon. We also found that the temperature for dominantly vaporizing hydrocarbon molecules from PMMA and the length of time, the gaseous hydrocarbon atmosphere is maintained, are dependent on both the heating temperature profile and the amount of a solid carbon feedstock. From those results, we strongly suggest that the heating rate and the amount of solid carbon are the dominant factors to determine the crystalline quality of the resulting graphene film. Under optimal growth conditions, the PMMA-derived graphene was found to have a carrier (hole) mobility as high as ${\sim}2,700cm^2V^{-1}s^{-1}$ at room temperature, which is superior to common graphene converted from solid carbon.

• Korean Chemical Engineering Research
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• v.50 no.1
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• pp.112-117
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• 2012

With the development of nanotechnology, nano-consumer products have been popularized. For the past 10 years, potential risk of nanomaterials to human and environment have been raised carefully. Especially, workers, who directly handle nanomaterials in laboratories and manfacturers, will lead to direct exposure of nanomaterials. Therefore, direct exposure assessment and field monitoring of nanomaterials are required to assess and manage the nanomaterial exposure to human and environment. In this work, two nano-manufacturing companies, which had plasma and sol-gel processes, were selected to analyze the main exposure source and process with in-situ SMPS (scanning mobility particle sizer) and ex-situ TEM (transmission electron microscopy). The results showed that the colloidal nanoparticle in liquid phase was easily evaporated and monitored by SMPS. Most serious thing is that the workers does not know about the potential risk of nanomaterials, and thus they are not taking proper protection activities, such as PPE (personal protective equipment). Therefore, exposure assessment for nanomaterial handling facilities should be additionally carried out, and nano-safety management protocols are also provided.

• Korean Journal of Plant Resources
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• v.19 no.4
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• pp.530-536
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• 2006

Hardwood cutting propagation and early growth characteristics were investigated in order to develop the method of cutting propagation and to find out growth characteristics in the low altitude for in situ and ex situ conservation of Empetrum nigrum var. japonicum K. Koch, which is typical arctic alpine plants on Mt. Halla. The growth of roots and shoots was different depending on hormone concentrations or soil conditions. The survival rate, rooting rate, root growth, number of root and shoot growth increased with treatment of 100 mg/l or 500 mg/l NAA. Consequently, optimum condition of hardwood cutting was at treatment with 100 mg/l or 500 mg/l NAA. When plantlets from hardwood cuttings were exposed to the field condition, after 7 months survival rate was 73.3% without shading while $91.1{\sim}94.4%$ at shading conditions. In the green house, however, survival rate of plantlets were $95.6{\sim}97.8%$ without shading. The growth of plantlets was different depending on sites and shading conditions. Particularly, the best growth was obtained when the plantlets were grown in shading conditions. It indicates that relative humidity and light intensity are correlated with the growth in the low altitude area.

• Korean Journal of Plant Resources
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• v.28 no.2
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• pp.243-252
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• 2015

This study was performed to establish a production system for in situ and ex situ conservation of Elsholtzia minima Nakai, an endemic plant grown in Jeju Island. Moreover, this study aimed to identify root-growth characteristics according to the use of pre-treatment agents and seedling growth effect according to fertilizer application. The mean temperature was similar in greenhouse and vinyl-moist chamber, but air humidity was higher in vinyl-moist chamber than in greenhouse. After stem planting of Elsholtzia minima Nakai, initial root growth was observed after 10 days in greenhouse and after 7 days in vinyl-moist chamber. Root growth rate was more rapid in vinyl-moist chamber. Moreover, survival rate, root growth rate and root number was slightly higher in vinyl-moist chamber than in greenhouse, indicating that vinyl-moist chamber is more effective in plant growth. When pre-treatment agents were used to remove root growth-inhibiting substances, a higher root growth rate of more than 95% was found in pre-treatment groups, excluding the group treated with AgNO₃ at 77.5%. Thus, Elsholtzia minima Nakai is thought to have less root growth inhibitors. In the analysis of nitrogen application rate and Osmocote application by seedling container, a difference was found in survival rate and growth according to application rate and container conditions. When Osmocote, a slow release fertilizer, was applied to the soil surface around each culture container, survival rate and the growth of aerial and root parts were most favorable. Thus, Osmocote fertilizer is thought to be desirable for seedling propagation of Elsholtzia minima Nakai.