• 제목/요약/키워드: Evaporating

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Hot Wall Epitaxy (HWE) 방법으로 성장된 $CuGaTe_2/GaAs$ 에피레이어의 광학적 특성 (Optical Properties for $CuGaTe_2/GaAs$ Epilayers Grown by Hot Wall Epilaxy)

  • 홍광준;박창선
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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    • pp.167-170
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    • 2004
  • The stochiometric mix of evaporating materials for the $CuGaT_2$ single crystal thin films was prepared from horizontal furnance. Using extrapolation method of X-ray diffraction patterns for the $CuGaTe_2$ polycrystal, it was found tetragonal structure whose lattice constant $a_0$ and $c_0$ were 6.025 ${\AA}$ and 11.931 ${\AA}$, respectively. To obtain the single crystal thin films, $CuGaTe_2$ mixed crystal was deposited on throughly etched semi-insulator GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were $670^{\circ}C$ and $410^{\circ}C$ respectively, and the thickness of the single crystal thin films is $2.1{\mu}m$. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). From the photocurrent spectrum by illumination of perpendicular light on the c - axis of the $CuGaTe_2$ single crystal thin film, we have found that the values of spin orbit coupling ${\Delta}s.o$ and the crystal field splitting ${\Delta}cr$ were $0.079\underline{1}eV$ and $0.246\underline{3}eV$ at 10 K, respectively. From the PL spectra at 10K, the peaks corresponding to free bound excitons and D-A pair and a broad emission band due to SA is identified. The binding energy of the free excitons are determined to be $0.047\underline{0}eV$ and the dissipation energy of the donor-bound exciton and acceptor-bound exciton to be $0.049\underline{0}eV$, $0.055\underline{8}eV$, respectively.

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Hot Walll Epitaxy (HWE)법에 의한 $CuInSe_2$ 단결정 박막 성장과 가전자대 갈라짐에 대한 광전류 연구 (Growth and Photocurrent Study on the Splitting of the Valence Band for $CuInSe_2$ Single Crystal Thin Film by Hot Wall Epitaxy)

  • 윤석진;홍광준
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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    • pp.234-238
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    • 2004
  • A stoichiometric mixture of evaporating materials for $CuInSe_2$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $CuInSe_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were $620^{\circ}C$ and $410^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CuInSe_2$ single crystal thin films measured with Hall effect by van der Pauw method are $9.62{\times}10^{l6}\;cm^{-3}$ and $296\;cm^2/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $CuInSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)\;=\;1.1851\;eV\;-\;(8.99{\times}10^{-4}\;eV/K)T^2/(T+153K)$. The crystal field and the spin-orbit splitting energies for the valence band of the $CuInSe_2$ have been estimated to be 0.0087 eV and 0.2329 eV at 10K, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}_{so}$ definitely exists in the $\Gamma_6$ states of the valence band of the $CuInSe_2$. The three photocurrent peaks observed at 10K are ascribed to the $A_1-$, $B_1-$, and $C_1$-exciton peaks for n = 1.

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구동장치 및 열교환기 변경에 따른 냉매가열식 열펌프의 성능특성 (Performance of a Refrigerant Heating Type Heat Pump by Changing of Driving Devices and Heat Exchangers)

  • 박윤철;김상혁;김지영
    • 설비공학논문집
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    • 제20권1호
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    • pp.49-56
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    • 2008
  • When the outdoor air temperature decreased less than the freezing temperature, frost forms at the surface of heat exchangers and it makes the performance degradation of a heat pump system. In this study, a heat pump system has been developed which has a refrigerant heating device as an auxiliarly heating equipment. To reduce power consumptions of the system, a liquid pump, rather than a compressor, was used to drive refrigerant in the heat pump cycle. Ratio of refrigerant mass flow between a refrigerant heating heat exchanger(GHX) and a outdoor plate heat exchanger(PHX) was varied and the system performance was measured and analyzed. As results, when the refrigerant flow rate to the GHX was decreased, the system performance is decreased due to heat absorption capability restriction of the GHX and small variation of the power consumption in the compressor. The effect on the evaporating and condensing pressure by the distribution ratio of the refrigerant to the each heat exchanger is small compare to the effect by the frequency change in the compressor. When the compressor was replaced by the liquid pump, the capacity of the system decreased a little, however the power consumption decrease approximately 80% compare with the power used in the compressor.

$CuInSe_2$ 단결정 박막 성장과 광전류 특성 (Properties of Photocurrent and Growth of $CuInSe_2$ single crystal thin film)

  • S.H. You;K.J. Hong
    • 한국재료학회:학술대회논문집
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    • 한국재료학회 2003년도 춘계학술발표강연 및 논문개요집
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    • pp.83-83
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    • 2003
  • The stochiometric mix of evaporating materials for the CuInSe$_2$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, CuInSe$_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were 62$0^{\circ}C$ and 41$0^{\circ}C$, respectively. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of CuInSe$_2$ single crystal thin films measured from Hall effect by van der Pauw method are 9.62$\times$10$^{16}$ cm$^{-3}$ , 296 $\textrm{cm}^2$/V.s at 293 K, respectively From the photocurrent spectrum by illumination of perpendicular light on the c-axis of the CuInSe$_2$ single crystal thin film, we have found that the values of spin orbit splitting ΔSo and the crystal field splitting ΔCr were 6.1 meV and 175.2 meV at 10 K, respectively. From the photoluminescence measurement on CuInSe$_2$ single crystal thin film, we observed free excition (Ex) existing only high quality crystal and neutral bound exiciton (D$^{\circ}$,X) having very strong peak intensity. Then, the full-width-at -half-maximum(FWHM) and binding energy of neutral donor bound excition were 7 meV and 5.9 meV, respectivity. By Haynes rule, an activation energy of impurity was 59 meV.

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분공수와 분사각의 영향에 따른 거시적 디젤 분무 가시화 (Macroscopic Visualization of Diesel Sprays with respect to Nozzle Hole Numbers and Injection Angles)

  • 정용진;장진영;배충식
    • 한국분무공학회지
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    • 제29권1호
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    • pp.32-37
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    • 2024
  • Macroscopic visualization of non-evaporating sprays was experimentally conducted to investigate spray tip penetration and spray angle under low-density conditions, corresponding to an early injection strategy. Furthermore, injectors with varying injection angles (146° and 70°) and numbers of holes (8 and 14) were employed to examine the impact of injector configuration. Compared to the baseline injector, 8H146, which has 8 holes and a 146° injection angle, the spray tip penetration of the 8H70 injector was found to be longer. This can be attributed to higher momentum due to a smooth flow field between the sac volume and the nozzle inlet, which is located closer to the injector tip centerline. The increase in velocity led to intense turbulence generation, resulting in a wider spray angle. Conversely, the spray tip penetration of the 14H70 injector was shorter than that of the 8H70 injector. The competition between increased velocity and decreased nozzle diameter influenced the spray tip penetration for the 14H70 injector; the increase in momentum, previously observed for the 8H70 injector, contributed to an increase in spray tip penetration, but a decrease in nozzle diameter could lead to a reduction in spray tip penetration. The spray angle for the 14H70 injector was similar to that of the 8H146 injector. Moreover, injection rate measurements revealed that the slope for a narrow injection angle (70°) was steeper than that for a wider injection angle during the injection event.

한지(韓紙) 엔드래핑처리 원판(圓板)의 감압건조응력(減壓乾燥應力) 분포모형(分布模型) 및 엔드래핑스의 건조결함(乾燥缺陷) 예방효과(豫防效果) (Model of Drying Stress Distribution in Disks End-wrapped in Korean Paper and Effects of End-wrappings on Prevention of Drying Defects for Vacuum Drying of Disks)

  • 이남호;정희석
    • Journal of the Korean Wood Science and Technology
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    • 제19권1호
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    • pp.31-63
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    • 1991
  • 원판의 관행 열기건조시 잔적위치에 따른 건조속도(乾燥速度)의 차이는 심하였고, 원판의 직경이 변이가 클수록 건조속도(乾燥速度)의 변화기복도 심하였으나, 강압건조(減壓乾操)의 경우 건조속도(乾操速度)는 잔적위치와 원판 직경의 변이에 영향을 받지 않은 것이 확인되었다. 원판 내층(內層)의 접선방향 표면응력(表面應力)은 수종, 엔드래핑처리 및 직경생장부위(直徑生長部位)에 관계없이 미미한 압축응력(壓縮應力)을 나타냈고, 무처리 원판은 수(髓)로부터 6cm인 점을 임계점(臨界點)으로하여 수(髓) 부위쪽이 원주부(圓周部) 쪽보다 더 큰 압축응력(壓縮應力)을 나타내는 일계단상(一階段狀)의 분포모형을 보인 반면에, 한지 엔드래핑 원판은 균일한 분포모형을 나타냈는데, 이는 한지 엔드래핑의 경우 한지에 의한 표면수분 증발 억제효과로 심재와 변재부위간에 수분유동속도(水分流動速度)의 차이가 작았기 때문인 것으로 판단되며, 한지 엔드래핑은 내층(內層)의 압축응력(壓縮應力)을 억제하는 효과가 컸음을 알 수 있었다. 또한 수축이방법(收縮異方性)에 기인한 접선방향 응력은 원주선상에서 최대인장응력(最大引張應力)을 나타냈고, 수(髓)를 향할수록 점점 감소하여 수(髓) 근처에서 압축응력(壓縮應力)으로 전환되는 분포모형을 보였다. 건조종료시 오리나무, 호도나무 및 은행나무의 한지 엔드래핑 원판의 접선방향 최대인장응력(最大引張應力)은 무처리 원판보다 작았고, 한지 엔드래핑 원판의 V형 크랙발생 임계함수율(臨界含水率)도 무처리 원판에 비하여 더 낮게 나타났는데, 이것은 한지의 수분증발 억제효과에 따른 원판의 영구변형화(永久變形化)에 기인한 것으로 생각된다. 감압건조(減壓乾操) 응력분포시험(應力分布試驗)에서 V형 크랙은 한지(韓紙)와 알루미늄호일 엔드래핑 원판에서는 전혀 발생하지 않았고, 무처리 원판에서도 매우 경미하게 발생하였다. 또한 심재할열(心材割裂)도 오리나무와 호도나무의 한지(韓紙) 엔드래핑 원판에서는 전혀 발생하지 않았고, 기타의 원판에서도 그 발생 정도는 매우 경미하였다. 특히 한지는 물론 알루미늄호일 엔드래핑 원판의 감압건조(減壓乾燥)는 건조결함을 예방하는 데 효과적이었고, 더구나 은행나무는 110시간만에, 오리나무는272시간, 그리고 호두나무는 407시간만에 각각 이용함수율(利用含水率) 수준까지 건조가 가능하여, 건조시간이 크게 단축되었다.

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$In_2Se_3$$Cu_2Se$를 이용한 $CuInSe_2$박막제조 및 특성분석 (Fabrication and Characterization of $CuInSe_2$Thin Films from $In_2Se_3$ and$Cu_2Se$Precursors)

  • 허경재;권세한;송진수;안병태
    • 한국재료학회지
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    • 제5권8호
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    • pp.988-996
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    • 1995
  • CdS/CuInSe$_2$태양전지의 광흡수층인 CuInSe$_2$박막을 In$_2$Se$_3$와 Cu$_2$Se 이원화합물을 precursor로 하여 진공증발법으로 제조하였고 특성을 분석하였다. 먼저 유리기판위에 0.5$\mu\textrm{m}$ 두께의 In$_2$Se$_3$를 susceptor온도를 변화시켜가면서 증착한 결과 40$0^{\circ}C$에서 가장 평탄하고 치밀한 박막이 형성되었다. 그 위에 Cu$_2$Se$_3$를 진공증발시켜 증착함으로써 in-situ로 CuInSe$_2$박막을 형성시키고 In$_2$Se$_3$를 추가로 증발시켜 CuInSe$_2$박막내에 존재하는 제 2상인 Cu$_2$Se를 제거시켰다. 이 경우 susceptor온도가 $700^{\circ}C$ 일때 미세구조가 가장 좋은 CuInSe$_2$박막이 형성되었으며 약 1.2$\mu\textrm{m}$ 두께에서 약 2$\mu\textrm{m}$의 결정립크기와 (112) 우선배향성을 가졌다. 추가 In$_2$Se$_3$양이 증가함에 따라 CuInSe$_2$박막의 조성편차보상으로 hole 농도가 감소하고 전기 비저항이 증가하였고, optical bandgap은 거의 일정한 값인 1.04eV의 값을 가졌다. Mo/유리기판 위에 증착한 CuInSe$_2$박막도 유리기판 위에 증착한 박막과 비슷한 미세구조를 가졌으며, 이 박막을 토대로 ZnO/CdS/CuInSe$_2$/Mo 구조를 갖는 태양전지 구현이 가능할 것으로 생각된다.

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Hot Wall Epitaxy(HWE)법에 의한 BaIn2S4 단결정 박막 성장과 광전도 특성 (Growth and optical conductivity properties for BaIn2S4 single crystal thin film by hot wall epitaxy)

  • 정경아;홍광준
    • 한국결정성장학회지
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    • 제25권5호
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    • pp.173-181
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    • 2015
  • A stoichiometric mixture of evaporating materials for $BaIn_2S_4$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $BaIn_2S_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperatures were $620^{\circ}C$ and $420^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by double crystal X-ray diffraction (DCXD). The carrier density and mobility of $BaIn_2S_4$ single crystal thin films measured from Hall effect by van der Pauw method are $6.13{\times}10^{17}cm^{-3}$ and $222cm^2/v{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $BaIn_2S_4$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=3.0581eV-(3.9511{\times}10^{-3}eV/K)T^2/(T+536K)$. The crystal field and the spin-orbit splitting energies for the valence band of the $BaIn_2S_4$ have been estimated to be 182.7 meV and 42.6 meV, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}_5$ states of the valence band of the $BaIn_2S_4/GaAs$ epilayer. The three photocurrent peaks observed at 10 K are ascribed to the $A_1$-, $B_1$-exciton for n = 1 and $C_{24}$-exciton peaks for n = 24.

溫病學에서의 眼耳鼻咽喉科 疾患에 대한 文獻考察;臨證指南醫案을 중심으로 (A Literature Study of Ophthalmotolaryngologic Diseases from the Viewpoint of Onbyeong; On the Basis of Imjeungjinamuian)

  • 조재훈;채병윤;김윤범
    • 한방안이비인후피부과학회지
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    • 제15권1호
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    • pp.198-218
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    • 2002
  • On the basis of Imjeungjinamuian(臨證指南醫案), authors investigated the pathogenesis and treatment of ophthalmotolaryngobgic diseases from the viewpoint of Onbyeong(溫病). 1. The symptoms and diseases investigated according to department were as follows;. 1) Ophthalmology : blepharitis, blepharedema, lacrimal hypersecretion, hyperemia, ophthalmalgla, photopsia, visual disturbance, mydriasis 2) Otology : full-feeling, otorrhea, otalgla, mastoiditis, tinnitus, hearing disturbance, vertigo 3) Rhinology : rhinorrhea, nasal obstruction, sinusitis, epistaxis 4) Laryngology : sore throat, hoarseness 5) The Others : headache, cough, asthma 2. The pathogenesis and treatment of ophthalmotolaryngologic diseases were as follows. 1) When the pathogenesis of hyperemia, otorrhea, otalgia, mastoiditis, hearing disturhance. epistaxis, sore throat, headache and cough are wind-stagnanc(風鬱), wind-warm(風溫), wind-fire(風火), wind-dryness(風燥), dryness-heat(燥熱), the treatment of pungent-cool-evaporating(辛凉解表) with Dajosan(茶調散), Mori Folium(桑葉), Lonicerae Flos(金銀花), Forsythiae Fructus(連翹), Viticis Fructus(蔓荊子), Prunellae Spica(夏枯草), Arctii Fructus(牛蒡子), etc can be applied. 2) When the pathogenesis of hoarseness, cough and asthma are cold(寒), cold with endogenous heat(寒包熱, 外冷內熱), water retention(水邪), fluid retention(伏飮), impairment of YangKi by overexertion(勞傷陽氣), the treatment of pungent-warm-evaporating(辛溫解表) with Mahaenggamseoktang(麻杏甘石湯), Socheongryongtang(小靑龍湯), Jeongryeokdaejosapyetang(정력대조사폐탕), Gyejitang(桂枝湯), Armeniacae Amarum Semen(杏仁), etc can be applied. 3) When the pathogenesis of photopsia, otorrhea, otalgia, rhinorrhea, sinusitis, epistaxis, sore throat, hoarseness, headache and cough are stagnancy-induced heat(鬱熱), wind-dryness(風燥), wind-heat(風熱), summer heat(暑熱), summer wind(暑風), insidious summer heat(伏暑), autumn heat(秋暑), autumn wind(秋風), autumn dryness(秋燥), dryness-heat(燥熱), heat in Ki system(氣分熱), insidious warm(溫伏), brain discharge by fire in Ki system(氣火 腦熱), heat in stomach(胃熱), endogenous fire by deficiency of Yin(陰虛內火), deficiency of Yin in stomach(胃陰虛), the treatment of Ki-cooling(淸氣) with Bangpungtongseongsan(防風通聖散), Ikweonsan(益元散), Gyejibaekhotang(桂枝白虎湯), Geumgwemaekmundongtang(금궤맥문동탕), Gyeongokgo(瓊玉膏), Sojae Semen Praeparatum(두시), Scutellariae Radix(黃芩), Phyllostachys Folium(竹葉), Adenophorae Radix(沙參), Mori Cortex(桑白皮), Fritillariae Cirrhosae Bulbus(貝母), etc can be applied. 4) When the pathogenesis of blepharitis, hyperemia, ophthalmalgia, full-feeling, otorrhea, otalgia, tinnitus, hearing disturbance, sinusitis, hoarseness, headache and cough are fire in liver(肝火), fire in gallbladder(膽火), ministerial fire in Soyang system(少陽相火), wind-stagnancy(風鬱), stagnancy-induced fire(鬱火), brain discharge by phlegm-fire(痰火 腦熱), the treatment of mediation(和解) with Gardeniae Fructus(梔子), Moutan Cortex(牧丹皮), Saigae Tataricae Cornu(羚羊角), Artemisiae Annuae Herba(靑蒿), Cyperi Rhizoma(香附子), Poria(적복령), etc can be applied. 5) When the pathogenesis of blepharedema and cough are dampness in both spleen and lung(脾肺濕) damp-heat(濕熱), damp-phlegm(濕痰), the treatment of dampness-resolving(化濕) with Poria(백복령), Coicis Semen(薏苡仁), Tetrapanacis Medulla(通草), Armeniacae Amarum Semen(杏仁), Talcum(滑石), etc can be applied. 6) When the pathogenesis of vertigo and cough are deficiency of Yong(營虛), heat in Yong, system(營熱), the treatment of Yong-cooling(淸營) with Rehmanniae Radix(生地黃), Liriopis Tuber(麥門冬), Biotae Semen(柏子仁), Lilii Bulbus(百合), Phyllostachys Folium(竹葉), etc can be applied. 7) When the pathogenesis of epistaxis are heat in blood system of heart(心血熱), reversed flow of fire(火上逆), overexertion(努力), the treatment of blood-cooling(凉血) with Rhinoceri Cornu(犀角), Rehmanniae Radix(生地黃), Moutan Cortex(牧丹皮), Salviae Miltiorrhizae Radix(丹參), Scrophulariae Radix(玄蔘), etc can be applied. 8) When the pathogenesis of nasal obstruction is pathogen-stagnancy(邪鬱), the treatment of resuscitation(開竅) with Sosang(少商, LU11) acupuncture can be applied. When the pathogenesis of hoarseness is evil Ki(穢濁), the treatment of resuscitation(開竅) with Arctii Fructus(牛蒡子), Lasiosphaera Seu Calvatia(馬勃), Curcumae Radix(鬱金), etc can be applied. When the pathogenesis of headache is stasis of both Ki and blood(氣血瘀痺), the treatment of resuscitation(開竅) with Cnidii Rhizoma(川芎), Asari Herba Cum Radice(細辛), Scorpio(全蝎), moxibustion(灸), etc can be applied. 9) When the pathogenesis of lacrimal hypersecretion, visual disturbance, mydriasis, tinnitus, hearing disturbance, sinusitis, epistaxis, hoarseness and cough are deficiency of Yin(陰虛), deficiency of kidney(腎虛), deficiency of both liver and kidney(肝腎虛), deficiency of both heart and kidney(心腎虛), brain discharge by deficiency of Yin(陰虛 腦熱), exuberance of Yang in liver(肝陽上亢), overexertion(勞損), the treatment of Yin-replenishing(滋陰) with Yukmijihwanghwan(六味地黃丸), Hojamhwan(虎潛丸), Jeobutang(猪膚湯), Lycii Fructus(枸杞子), Polygoni Multiflori Radix(何首烏), Rehmanniae Radix(生地黃), Schizandrae Fructus(五味子), Liriopis Tuber(麥門冬), Asini Gelatinum(阿膠), etc can be applied. 10) When the pathogenesis of ophthalmalgia, mydriasis, vertigo and headache are deficiency of Yin in liver(肝陰虛), exuberance of Yang in liver(肝陽上亢), endogenous wind(內風), excess in upper and deficiency in lower part(上實下虛), the treatment of Yin-replenishing(滋陰) and endogenous wind-calming(熄風) with Rehmanniae Radix Preparat(熟地黃), Lycii Fructus(枸杞子), Polygoni Multiflori Radix(何首烏), Paeoniae Radix Alba(白芍藥), Ostreae Concha(牡蠣), Saigae Tataricae Cornu(羚羊角), Chrysanthemi Flos(菊花), etc be applied. 11) When the pathogenesis of mydriasis, sinusitis, hoarseness, headache, cough and asthma are exhaustion of vital essence(精氣無收藏), brain discharge(腦髓不固), floating Yang(陽虛浮), exsanguination(失血), deficiency of both Yin and Yang(陰陽不足), overexertion(勞損), deficiency of Yang in kidney(腎陽虛), the treatment of Yang-restoring and exhaustion-arresting(回陽固脫) with Yangyeongtang(養營湯), Cheonjinhwan(天眞丸), Bokmaektang(복맥탕), Geonjungtang(建中湯), Dogihwan(都氣丸), Singihwan(腎氣丸), Jinmutang(眞武湯), Ostreae Concha(牡蠣), Nelumbinis Semen(蓮子肉), etc can be applied. 12) When the pathogenesis of lacrimal hypersecretion, vertigo and headache are deficiency of stomach and endogenous wind(胃虛內風), endogenous wind with phlegm(內風挾痰), liver check of stomach(肝木橫擾), the treatment of concomitant-treating of both liver and stomach(肝胃同治) with Paeoniae Radix Alba(白芍藥), Uncariae Ramulus Et Uncus(釣鉤藤), Gastrodiae Rhizoma(天麻), Astragali Radix(황기), Pinelliae Rhizoma(半夏), etc can be applied. When the pathogenesis of asthma is failure of kidney to promote inspiration(腎不納氣), the treatment of kidney-tonifing and inspiration-promoting(補腎納氣) with Singihwan(腎氣丸), Psoraleae Fructus(補骨脂), Juglandis Semen(胡桃), Aquilariae Resinatum Lignum(沈香), etc can be applied. When the pathogenesis of asthma is deficiency of Ki(氣虛), the treatment of Ki-reinforcing(補氣) with Sagunjatang(四君子湯), Insamgeonjungtang(人參建中湯), etc can be applied.

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Hot Wall Epitaxy(HWE)범에 의한 $CuInSe_2$ 단결정 박막 성장과 가전자대 갈라짐에 대한 광전류 연구 (Growth and photocurrent study on the splitting of the valence band for $CuInSe_2$ single crystal thin film by hot wall epitaxy)

  • 홍명석;홍광준
    • 한국결정성장학회지
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    • 제14권6호
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    • pp.244-252
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    • 2004
  • $CuISe_2$ 단결정 박막은 수평 전기로에서 합성한 $CuInSe_2$ 다결정을 증발원으로하여, hot wall epitaxy(HWE) 방법으로 증발원과 기판(반절연성-GaAs(100))의 온도를 각각 $620^{\circ}C$, $410^{\circ}C$로 고정하여 단결정 박막을 성장하였다. 이때 단결정 박막의 결정성은 광발광 스펙트럼과 이중결정 선 요동곡선(DCRC) 으로 부터 구하였다. Hall 효과는 van der Pauw 방법에 의해 측정되었으며, 293K에서 운반자 농도와 이동도는 각각 $9.62\times10^{16}/\textrm{cm}^3$, 296 $\textrm{cm}^2$/Vㆍs 였다. $CuAlSe_2$/Si(Semi-Insulated) GaAs(100) 단결정 박막의 광흡수와 광전류 spectra를 293k에서 10K까지 측정하였다. 광흡수 스펙트럼으로부터 band gap $E_g$(T)는 Varshni 공식에 따라 계산한 결과 1.1851 eV-($8.99\times10^{-4} eV/K)T^2$/(T+153k)였다. 광전류 스펙트럼으로 부터 Hamilton matrix(Hopfield quasicubic mode)법으로 계산한 결과 crystal field splitting Δcr값이 0.0087eV이며 spin-orbit Δso값은 0.2329 eV임을 확인하였다. 10K일 때 광전류 봉우리들은 n = 1일때 $A_1-, B_1$-와 $C_1$-exciton봉우리임을 알았다.