• 한국재료학회지
• /
• 제15권7호
• /
• pp.480-485
• /
• 2005

Sc has been known to be an very effective ppt-hardening element in Al and Al alloys and also to be effective in modification of eutectic Si in hypoeutectic Al-Si alloys. The modification mechanism of Sc is different from that of the traditional modifier Sr in Al-Si alloys. In the present study the effects of Sc on the primary and eutectic Si in hypereutectic Al-Si alloys were investigated with evaluating the microstructures with OM, EPMA and EBSD methods. The results represent that Sc has only a small effect on primary Si when added less than $0.8wt\%$. However, when Sc addition leading to the precipitation of metallic Sc within primary Si reaches $1.6wt\%$, very coarse primary Si occurs.

• 한국주조공학회지
• /
• 제6권2호
• /
• pp.116-121
• /
• 1986

The effects of pressure during solidification on macro-and micro-structures have been studied in pure aluminium and Al-Si alloys. The application of pressure during solidifcation accelerated both equiaxed and columnar dendritic-growth due to stimulating of equiaxed survival and faster preferential growth of primary dendrites against the parallel direction of heat flow. Burden-Hunt model was modified to express the significant changes of CET behaviours under pressure. A further point to be noted was that greatly fine eutectic silicon flakes ($0.5\;{\times}\;13{\mu}m$) with the decrease of halo layers ($7{\mu}m$) of aluminium riched phases in the periphery of primary silicon particles were observed when pressure was applied during solidification.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
• /
• pp.86-86
• /
• 2012

The new approaches for silicon solar cell of new concept have been actively conducted. Especially, solar cells with wire array structured radial p-n junctions has attracted considerable attention due to the unique advantages of orthogonalizing the direction of light absorption and charge separation while allowing for improved light scattering and trapping. One-dimenstional semiconductor nano/micro structures should be fabricated for radial p-n junction solar cell. Most of silicon wire and/or pillar arrays have been fabricated by vapour-liquid-solid (VLS) growth because of its simple and cheap process. In the case of the VLS method has some weak points, that is, the incorporation of heavy metal catalysts into the growing silicon wire, the high temperature procedure. We have tried new approaches; one is electrochemical etching, the other is noble metal catalytic etching method to overcome those problems. In this talk, the silicon pillar formation will be characterized by investigating the parameters of the electrochemical etching process such as HF concentration ratio of electrolyte, current density, back contact material, temperature of the solution, and large pre-pattern size and pitch. In the noble metal catalytic etching processes, the effect of solution composition and thickness of metal catalyst on the etching rate and morphologies of silicon was investigated. Finally, radial p-n junction wire arrays were fabricated by spin on doping (phosphor), starting from chemical etched p-Si wire arrays. In/Ga eutectic metal was used for contact metal. The energy conversion efficiency of radial p-n junction solar cell is discussed.

• 한국해양공학회:학술대회논문집
• /
• 한국해양공학회 2006년 창립20주년기념 정기학술대회 및 국제워크샵
• /
• pp.181-184
• /
• 2006

Nano Infiltration Transient Eutectic Phase - Silicon Carbide (NITE-SiC) and $SiC_f/SiC$ composite have been fabricated by a Hot Pressing (HP) process, using SiC powder with an average size of about 30nm. Alumina ($Al_2O_3$) and Yttria ($Y_2O_3$) were used for additives materials. These mixed powders were sintered at the temperature a of $1300^{\circ}C$, $1650^{\circ}C$, $1800^{\circ}C$ and $1900^{\circ}C$ under an applied pressure of 20MPa. And unidirection and two dimension woven structures of $SiC_f/SiC$ composites were prepared starting from Tyranno SA fiber. Densification of microstructure gives an effect to density. Specially, Densification Mechanism basically is important from the sintering which use the HP. In this study, the densification of NITE-SiC and $SiC_f/SiC$ composite mechanism by a press displacement appears investigated. The mechanism on the densification of each sintering temperature was investigated. The each step is shows a with each other different mechanism quality.

• International Journal of Korean Welding Society
• /
• 제1권1호
• /
• pp.58-62
• /
• 2001

The surface of AC8A Ah alloy was modified by adding the Cu powder using a Plasma Transferred Arc (PTA) welding process. Under the optimum fabricating conditions, the modified surface of AC8A Ah alloy was observed to possess the sound microstructure with a minimum porosity. Hardness and wear resistance properties of the as-fabricated alloy were compared with those of the 76 heat-treated one. In case of the as-fabricated alloy, the hardness of the modified layer was twice that of the matrix region. Although significant increase in the hardness of the matrix region was observed after T6 heat treatment, the hardness of the modified layer was not observed to change. The wear resistance of the modified layer was significantly increased compared to that of the matrix region. The microstructure of a weld zone and the matrix region were investigated using the optical microscope, scanning electron microscope (SEM), electron probe microanalysis (EPMA), and transmission electron microscope (TEM). The primary and eutectic silicon in the weld zone were finer and more curved than in the matrix region, while some precipitates has had been found therein. According to the TEM observation, the predominant precipitate present in the weld zone was the $\theta$'phase, which is precipitated during cooling by rapid solidification in PTA welding process. Improvement of hardness and wear properties in the weld zone in the as-fabricated condition can be explained based on the presence of $\theta$’precipitates and fine primary and eutectic silicon distribution.

• 한국주조공학회지
• /
• 제11권3호
• /
• pp.208-216
• /
• 1991

The solidification behavior of the squeeze cast composites of aluminum alloys reinforced with boron fiber($100{\mu}m$) and silicon carbide fibers($140{\mu}m$ and $15{\mu}m$) were investigated. Al-4.5wt%Cu and Al-l0wt%Mg were chosen for the matrix phase of the composites. In the squeeze cast specimen with high thermal difference between fiber and melt, the average secondary dendrite arm spacing(DAS) in reinforced alloy is smaller than that in unreinforced alloy. It was also observed that primary ${\alpha}$ and non-equilibrium eutectic, which seems to be penetrated and solidified at the final stage of the solidification of the matrix, are irregularly distributed around fibers. It is considered that cold fibers serve as heterogeneous nucleation site. While in the remelted and resolidified specimen without temperature difference, the DAS was not changed with reinforcement and microstructure reveals non-equilibrium eutectic with relatively uniform thickness around fibers. It might be evident the nucleation starts at interfiber region. Microsegregation decreases with the decrease in cooling rate and with reinforcement in the as-squeeze cast specimen. Al-10wt% Mg alloy shows less microsegregation than Al-4.5wt%Cu alloy.

• Journal of Welding and Joining
• /
• 제32권6호
• /
• pp.75-81
• /
• 2014

Usage of heavy metal element (Pb, Hg and Cd etc.) in electronic devices have been restricted due to the environmental banning of the European Union, such as WEEE and RoHS. Therefore, it is needed to develop the Pb-free solder plated ribbon in photovoltaic (PV) module. This study described that degradation characteristics of PV module under damp heat (DH, $85^{\circ}C$ and 85% R.H.) condition test for 1,000 h. Solar cell ribbons were utilized to hot dipping plate with Pb-free solder alloys. Two types of Pb-free solder plated ribbons, Sn-3.0Ag-0.5Cu (SAC305) and Sn-48Bi-2Ag, and an electroless Sn-40Pb solder hot dipping plated ribbon as a reference sample were prepared to evaluate degradation characteristics. To detect the degradation of PV module with the eutectic and Pb-free solder plated ribbons, I-V curve, electro-luminescence (EL) and cross-sectional SEM analysis were carried out. DH test results show that the reason of maximum power (Pm) drop was mainly due to the decrease fill factor (FF). It was attributed to the crack or oxidation of interface between the cell and the ribbon. Among PV modules with the eutectic and Pb-free solder plated ribbon, the PV module with SAC305 ribbon relatively showed higher stability after DH test than the case of PV module with Sn-40Pb and Sn-48Bi-2Ag solder plated ribbons.

• 한국주조공학회지
• /
• 제5권4호
• /
• pp.243-257
• /
• 1985

Many authors have studied the solidification process of cast iron and the effect of grain boundaries in austenite shell on the growth of spheroidal graphite. But, the studies on the melting morphology of cast iron are rare and the effect of grain boundaries in austenite shell on the melting procedure of spheroidal graphite cast iron is unknown. Therefore, in this work, the melting procedure of cast iron and the role of grain boundaries in austenite shell on the melting of spheroidal graphite have been studied. The main results are summarized as follows. 1. In white cast iron containing silicon, melting initiates at the interface between austenite matrix and temper carbon which was decomposed from $Fe_3C$ during heating. 2. In gray cast iron, melting initiates at the boundary of eutectic cell where elements with low melting temperature are condensed. The dissolution of kish graphite is difficult. 3. In spheroidal graphite cast iron containing little phosphor, melting initiates at the outer region of austenite shell in which silicon is condensed. In this case, grain boundaries in austenite shell give little effect on the melting procedure of spheroidal graphite. 4. In spheroidal graphite cast iron containing phosphor above 0.3 wt%, its melting phenomena are changed with heating rate due to the existence of steadite. In this case, it can be concluded that liquid phase of steadite, which segregated on outer region of austenite shell, moves to spheroidal graphite-austenite interface along the grain boundaries in austenite shell.

• 대한금속재료학회지
• /
• 제50권12호
• /
• pp.897-905
• /
• 2012

Directional solidification experiments were carried out in a hypoeutectic Al-11.3Si-3.5Cu system to investigate the microstructural evolution with the solidification rate. At a fixed temperature gradient, a dendritic microstructure was observed at a constant speed of more than $25{\mu}ms^{-1}$, a cellular interface developed at $5{\mu}ms^{-1}$ and the growth rate of $0.5{\mu}ms^{-1}$ led to the stability of the planar interface. The results revealed that primary silicon phases formed among cells, even though the studied Al-Si alloy system formed the composition within a hypoeutectic silicon composition. This suggests that the liquid concentration among cells during solidification reached a higher concentration, i.e., the eutectic concentration. It is, however, interesting that primary silicon phases did not form during a dendritic growth of more than $25{\mu}ms^{-1}$. These experimental observations are explained using the theoretical models on the interface temperatures.

• 한국주조공학회지
• /
• 제20권6호
• /
• pp.407-418
• /
• 2000

The effect of various factors on the results of degassing of AC4C aluminum alloy melt by using rotary degasser were investigated. The difference between the effects of nitrogen gases of commercial pure and high purity grades on the degassing results was not significant. The optimum degassing condition was obtained. The effect of holding and degassing temperature was not significant, either. The result of degassing was deteriorated by the modification treatment of eutectic silicon, meanwhile improved by the grain refining. The effect of the latter was stronger than that of the former when the melt was treated simultaneously. The volume fractions of hydrogen porosity of the castings obtained from the molds with water moisture such as natural and green sand molds were much higher than those from the molds without that such as pep-set and $CO_2$ molds.