• 전기화학회지
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• 제11권2호
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• pp.100-104
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• 2008

Titanium sheet metal substrates used in thin film batteries were wet etched and their surface area was increased in order to increase the discharge capacity and power density of the batteries. To obtain a homogeneous etching pattern, we used a conventional photolithographic process. Homogeneous hemisphere-shaped wells with a diameter of approximately $40\;{\mu}m$ were formed on the surface of the Ti substrate using a photo-etching process with a $20\;{\mu}m{\times}20\;{\mu}m$ square patterned photo mask. All-solid-state thin film cells composed of a Li/Lithium phosphorous oxynitride (Lipon)/$LiCoO_2$ system were fabricated onto the wet etched substrate using a physical vapor deposition method and their performances were compared with those of the cells on a bare substrate. It was found that the discharge capacity of the cells fabricated on wet etched Ti substrate increased by ca. 25% compared to that of the cell fabricated on bare one. High discharge rate was also able to be obtained through the reduction in the internal resistance. However, the cells fabricated on the wet etched substrate exhibited a higher degradation rate with charge-discharge cycling due to the nonuniform step coverage of the thin films, while the cells on the bare substrate demonstrated a good cycling performance.

• 공업화학
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• 제9권4호
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• pp.463-468
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• 1998

알루미늄의 부식에 있어서 HCI 용액내에 황산을 첨가하는 경우 황산이온의 화학적 흡착에 의한 부식억제 효과가 나타나며, CV (cyclic voltammetry) 실험결과 황산이온은 핏트내부에 보호성 산화피막을 생성함으로서 에치핏트가 핏트내부와 알루미늄 표면에 함께 생성되어 핏트의 밀도가 증가하였다. 알루미늄 교류에칭시에 핏트분포는 황산이온의 농도와 환원전류량에 의하여 크게 영향을 받으며, 환원전류인가시 $0.8mC/cm^2$ 이하의 전하량에서 핏트내부에 생성된 산화피막은 황산이온 농도의 증가에 따라 핏트발생에 대한 저항성이 중가하였으나, $0.8mC/cm^2$ 이상에서는 산화피막내에 국부적인 구조변화가 발생하며 황산이온 농도에 관계없이 산화피막의 파괴가 빠르게 진행되었다.

• 한국결정성장학회지
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• 제27권2호
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• pp.75-79
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• 2017

고밀도 플라즈마 식각 및 lift-off 두 가지 공정으로 honeycomb 형상의 Ag-grid 투명전극층을 제작하였고 제조 공법에 따른 광학적 및 전기적 특성을 비교하였다. 플라즈마 식각 조건 선정을 위하여 Ag 박막의 $10CF_4/5Ar$ 유도결합 플라즈마 식각특성을 조사하였다. 비교적 낮은 ICP source power 또는 rf chuck power 영역에서는 power 증가에 따라 Ag 식각속도가 증가하였고, 높은 power 조건에서는 $Ar^+$ 이온 에너지 감소 또는 $Ar^+$ 이온에 의한 F radical 제거로 인해 식각속도가 감소하였다. $10CF_4/5Ar$ 플라즈마 식각 공정에 의해 제작된 Ag-grid 전극층은 lift-off 공정으로 제작된 전극층에 비해 grid 패턴 형상의 왜곡이나 단절이 없는 더 우수한 grid 패턴 전사 효율과 가시광선 영역에서 더 높은 83.3 %(pixel 크기 $30{\mu}m$/선폭 $5{\mu}m$)와 71 %(pixel 크기 $26{\mu}m$/선폭 $8{\mu}m$)의 광투과율을 각각 나타내었다. 반면에 lift-off 공정으로 제작된 Ag-grid 전극층은 플라즈마 식각 공정 시편보다 더 우수한 $2.163{\Omega}/{\square}$(pixel 크기 $26{\mu}m$/선폭 $8{\mu}m$)과 $4.932{\Omega}/{\square}$(pixel 크기 $30{\mu}m$/선폭 $5{\mu}m$)의 면저항 특성을 나타내었다.

• 대한치과보철학회지
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• 제37권5호
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• pp.658-671
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• 1999

The major influencing factors on the strength of all-ceramic crowns are types of dental ceramics, fabrication techniques, methods of abutment preparation and cementation modes of all-ceramic restorations. Zinc phosphate cement and glass-ionomer cement were used as an early lot-ing media for all-ceramic crowns. Recently many studies have reported that resin cements have more advantages in increasing the fracture strength of restorations comparing with zincphosphate cement and glass-ionomer cement. The purpose of this study is to investigate the effect of etching, silane treatment, sandblasting and dentin bonding agents on fracture strengths of dental ceramics. 40 flat dentin specimens and 40 ceramic discs of 1.5mm thickness and 8mm diameter were fabricated, and divided into 4 groups according to surface treatments. Surface treatments before cementation were as follows Group I : (ceramic) : HF etching - silane treatment - application of bonding resin (dentin) : application of dentin bonding agent Group II : (ceramic) : sandblasting - application of bonding resin (dentin) : application of dentin bonding agent Group III : (ceramic) : application of bonding resin (dentin) : application of dentin bonding agent Group IV : (ceramic) : HF etching - silane treatment - application of bonding resin (dentin) : no dentin bonding procedure Dentin specimens and ceramic discs were cemented with dual cure resin cement, and went through thermocycling. Compressive stress es were loaded on the centers of ceramic discs with Instron test-ing machine, and fracture strengths resistance for catastrophic fracture were measured The results were as follows. 1. The group I showed the highest fracture resistance. The next was group II And group III, IV followed. 2. There was a significant difference in the mean value of fracture strengths between group I and group III (p<0.05), but no significant differences between group I and group II, and group II and group III (p>0.05). 3. There was a significant difference in the mean value of fracture strengths between group I and group IV (p<0.05).

• 센서학회지
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• 제9권3호
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• pp.224-232
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• 2000

표면 미세가공 공정에서 Al 공정을 이용하면 Al 전극의 제작에 의해 접촉 저항이나 선 저항 등을 줄여 전기적인 신호 손실을 줄일 수 있고, 산화막을 희생층으로 사용하는 간단한 공정에 의해 Al 구조물 제작이 가능한 장점을 지닌다. 그러나 실제 공정에서는 Al 전극이나 Al 구조물이 희생층 제거 시에 사용되는 HF 용액에 의해서 부식되는 문제점이 있다. 이러한 문제점을 해결하기 위해 사용되는 희생층 식각액인 BHF/glycerine 혼합 용액에 대한 PSG와 Al의 기본적인 식각 특성은 표면 미세가공에서 발생하는 구조적인 제한 조건에 따라 상당히 달라진다. 본 논문에서는 이러한 희생층의 구조적 특성과 Al 박막의 증착 표면 거칠기의 변화로 인한 식각 특성의 변화를 고려하여 실제로 표면 미세가공에 적용 가능한 혼합 용액의 조건을 조사하였다. 희생층 식각 조건변화에 따른 BHF/glycerine 혼합용액의 최적 혼합비는 $NH_4F$:HF:glycerine=2:1:2에서 가장 좋은 식각 선택비를 보이는 것으로 나타났으며 이 실험 결과를 실제 Al 전극 제작에 적용한 결과 Al 패턴이 희생층 식각액에 대해서 우수한 내식성을 보였다. 또한 Al의 식각액에 대한 내식성을 향상시키기 위하여 CMP 공정을 도입하여 증착 표면을 개선시켰으며 이를 Al 구조물의 제작에 적용하여 식각 특성을 분석하였다. 이러한 분석을 통해 본 논문에서 제시한 식각 조건을 이용하면 Al 전극과 Al 구조물을 표준적인 표면 미세가공 공정을 통하여 간단하게 제작할 수 있다.

• Progress in Superconductivity
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• 제7권1호
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• pp.17-21
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• 2005

We report the oscillation of the Josephson vortex-flow resistance in the rectangular stacks of $Bi_{2}Sr_{2}CaCu_{2}O_{8+x}$(Bi-2212) intrinsic Josephson junctions (IJJs). Apiece of Bi-2212 single crystal containing a few tens of IJJs was sandwiched between two gold electrodes and fabricated into a rectangular shape with the typical lateral size of about $1.5{\times}10\;{\mu}m^2$, using e-beam lithography and focused ion-beam etching techniques. In a tesla-range magnetic field applied in parallel with the junction planes, the oscillation of the Josephson vortex flow resistance was observed at temperatures near 60 K. The oscillation results from the interplay between the triangular Josephson vortex lattice and the potential barrier at the boundary of a single crystal. The oscillatory magnetoresistance for different bias currents, external magnetic fields, and the tilt-angles provides useful information on the dynamics of the coupled Josephson-vortex lattice system.

• 한국세라믹학회지
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• 제50권5호
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• pp.348-352
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• 2013

The evaluation of plasma resistance and the characteristics of yttria ceramics fabricated by calcination yttria as a starting material without dopants under an oxidation atmosphere was investigated. Regardless of the starting materials, as-received, and calcined yttria powder, XRD patterns showed that all samples have $Y_2O_3$ phase. The three cycling process inhibited a large grain, which occurs frequently during the yttria sintering, and a high density ceramic with a homogeneous grain size was obtained. The grain size of the sintered ceramic was affected by the starting powders. The smaller the grain size, the larger were the Young's modulus and KIC. Compared to $Al_2O_3$ and $ZrO_2$ ceramics, yttria ceramics showed a 3 times larger plasma resistance and a 1.4~2.2 times lower weight loss during the plasma etching test, respectively.

• 한국광학회:학술대회논문집
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• 한국광학회 1990년도 제5회 파동 및 레이저 학술발표회 5th Conference on Waves and lasers 논문집 - 한국광학회
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• pp.69-72
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• 1990

For the effective heat transfering in Lser Diodes, Beam-Lead structure were introduced which is applicable to hybrid Optoelectronic Integrated Circuits. A 5-layer planar structure Laser Diode is fabricated and Beam-Lead is made by Au plating. And carrier was made by etching Si substrate and LD was mounted on a carrier. The thermal resistance was measured and we could certain that Beam-Lead structure behaves well as a heat sink.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집 Vol.3 No.2
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• pp.792-796
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• 2002

In this work, porous silicon(PS) layer is used as a sensing material to detect organic gases. To do this, PS sensors with membrane structure are fabricated. The sensors were made by applying the technologies of membrane formation by anisotropic etching of silicon, and PS layer formation by anodization in HF solution. From fabricated sensors, current-voltage (I-V) curves were measured against ethanol (called alcohol), methanol and acetone gases evaporated from 0.1 to 0.5% solution concentrations at $36^{\circ}C$. As the result, all curves showed rectifying behavior due to a diode structure between Si and PS, and the conductance of sensor devices increased largely with the organic solution concentration at high voltage of 5V.

• 한국전기전자재료학회논문지
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• 제16권10호
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• pp.853-858
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• 2003

In this study, a new simplified technology for fabricating high density trench gate DMOSFETs using only three mask layers and TEOS/nitride spacer is proposed. Due to the reduced masking steps and self-aligned process, this technique can afford to fabricate DMOSFETs with high cell density up to 100 Mcell/inch$^2$ and cost-effective production. The resulting unit cell pitch was 2.3∼2.4${\mu}$m. The fabricated device exhibited a excellent specific on-resistance characteristic of 0.36m$\Omega$. cm$^2$ with a breakdown voltage of 42V. Moreover, time to breakdown of gate oxide was remarkably increased by the hydrogen annealing after trench etching.