• Journal of the Korean Institute of Telematics and Electronics D
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• v.34D no.11
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• pp.48-53
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• 1997

Volume hologram was recorded using reference beam form optical fiber taper. A singel mode fiber was chemically etced to make a taper structure, and we showed experimentally that the referencing by the irregular beam pattern from this taper structure could increase the storage density of photorefractive volume hologram. The spatial selectivity of the volume hologram with this method was increased by two times compared to the normal single mode fiber referencing case. A theoretical analysis with randomly phased plane model also confirmed the results.

• Journal of the Korean Vacuum Society
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• v.11 no.4
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• pp.249-255
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• 2002

For a formation of membrane structures, single crystal silicon wafers have been anisotropically etched with solutions of KOH and KOH-IPA. The etching rate was observed to be strongly dependent upon the etchant temperature and concentration. Mask patterns for the etching experiment was aligned to incline $45^{\circ}$on the primary flat of the silicon wafer. The different etching characteristics were observed according to pattern directions and etchant concentration. When the KOH concentration was fixed to 20 wt%, the U-groove etching shape was observed for the etching temperature of above $80^{\circ}C$, and V-groove shapes observed at below $80^{\circ}C$. Hillocks, which were generated at the etched silicon surfaces, has been decreased as the increasing of the etchant temperature and concentration.

• Corrosion Science and Technology
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• v.6 no.6
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• pp.304-307
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• 2007

As to the reflection electrode of LCD (liquid crystal displays), silver-copper-gold alloy (hereafter, it is called as ACA (Ag98%, Cu1%, Au1%)) is an effective material of which weathering resistance can be improved more compared with pure silver. However, there is a problem that gold remains on the substrate as residues when ACA is etched in cerium ammonium nitrate solution or phosphoric acid. Gold can not be etched in these etchants as readily as the other two alloying elements. Gold residue has actually been removed physically by brushing etc. This procedure causes damage to the display elements. Another etchant of iodine/potassium iodide generally known as one of the gold etchants can not give precise etch pattern because of remarkable difference in etching rates among silver, copper and gold. The purpose of this research is to obtain a practical etchant for ACA alloy. The results are as follows. The cyanogen complex salt of gold generates when cyanide is used as the etchant, in which gold dissolves considerably. Oxygen reduction is important as the cathodic reaction in the dissolution of gold. A new etchant of sodium cyanide / potassium ferricyanide whose cathodic reduction is stronger than oxygen, can give precise etch patterns in ACA alloy swiftly at room temperature.

• Proceedings of the KIEE Conference
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• summer
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• pp.518-520
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• 2004

In these days, there is a demand to develop fault current limiters(FCLs) to reduce excessive fault current and protect electrical equipments which are installed in the transmission and distribution power systems. We considered the resistive superconducting FCLs among the various kinds of FCLs. In this study, in order to develop the resistive superconducting FCL of 6.6kV 200A $3\phi$, we designed the new mask pattern for etching YBCO films by means of numerical analysis method, current limiting experiments and visualization of bubbles in films and investigated dielectric performance of the designed mask by using elecrtostatic numerical analysis method and breakdown experiments. We etched YBCO films by using the newly designed mask, connected the etched films in series and in parallel, and designed the 6.6kV resistive SFCL and then we observed the current limiting characteristics of the SFCL.

• Transactions of Materials Processing
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• v.16 no.1 s.91
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• pp.42-47
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• 2007

LCD-BLU is one of kernel parts of LCD and it consists of several optical sheets: LGP, light source and mold frame. The LGP of LCD-BLU is usually manufactured by etching process and forming numerous dots with $50\sim300{\mu}m$ diameter on the surface. But the surface of the etched dots of LGP is very rough due to the characteristics of the etching process during the mold fabrication, so that its light loss is high along with the dispersion of light into the surface. Accordingly, there is a limit in raising the luminance of LCD-BLU. In order to overcome the limit of current etched dot patterned LGP, optical pattern with continuous microlens was designed using optical simulation CAE. Also, a mold with continuous micro-lens was fabricated by UV-LiGA reflow process and applied to 7 inch size of navigator LCD-BLU in the present study.

• Journal of the Semiconductor & Display Technology
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• v.18 no.3
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• pp.72-76
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• 2019

A Q-switched diode-pumped neodymium-doped yttrium vanadate (YVO₄, λ =1064nm) laser was used for the direct patterning of indium tin oxide (ITO) films on glass substrate. During the laser direct patterning, the laser beam was incident on the two different directions of glass substrate and the laser ablated patterns were compared and analyzed. At a low scanning speed of laser beam, the larger laser etched lines were obtained by laser beam incident in reverse side of glass substrate. On the contrary, at a higher scanning speed, the larger etched pattern sizes were found in case of the beam incidence from front side of glass substrate. Furthermore, it was impossible to find no ablated patterns in some laser beam conditions for the laser beam from reverse side at a much higher scanning speed and repetition rate of laser beam. The laser beam is expected to be transferred and scattered through the glass substrate and the laser beam energy is thought to be also dispersed and much more influenced by the overlapping of each laser beam spot.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.5
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• pp.393-397
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• 2002

Polyimide (PI) films have been studied widely as the interlayer dielectric materials due to a low dielectric constant, low water absorption, high gap-fill and planarization capability. The polyimide film was etched using inductively coupled plasma system. The etcying characteristics such as etch rate and selectivity were evaluated at different $CF_4/(CF_4+O_2)$chemistry. The maximum etch rate was 8300 ${\AA}/min$ and the selectivity of polyimide to SiO$_2$was 5.9 at $CF_4/(CF_4+O_2)$ of 0.2. Etch profile of polyimide film with an aluminum pattern was measured by a scanning electron microscopy. The vertical profile was approximately $90^{\circ}$ at $CF_4/(CF_4+O_2)$ of 0.2. As 20% $CF_4$ were added into $O_2$ plasma from the results of the optical emission spectroscopy, the radical densities of fluorine and oxygen increased with increasing $CF_4$ concentration in $CF_4/O_2$ from 0 to 20%, resulting in the increased etch rate. The surface reaction of etched PI films was investigated using x-ray photoelectron spectroscopy.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.7
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• pp.701-707
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• 2004

High aspect ratio silicon structure through deep silicon etching process have become indispensable for advanced MEMS applications. In this paper, we present the results of modified Bosch process to obtain anisotropic silicon structure with conventional Inductively Coupled Plasma (ICP) etcher instead of the expensive Bosch process systems. In modified Bosch process, etching step ($SFsub6$) / sidewall passivation ($Csub4Fsub8$) step time is much longer than commercialized Bosch scheme and process transition time is introduced between process steps to improve gas switching and RF power delivery efficiency. To optimize process parameters, etching ($SFsub6$) / sidewall passivation ($Csub4Fsub8$) time and ion energy effects on etching profile was investigated. Etch profile strongly depends on the period of etch / passivation and ion energy. Furthermore, substrate temperature during etching process was found to be an important parameter determining etching profile. Test structures with different pattern size have been etched for the comparison of the aspect ratio dependent etch rate and the formation of silicon grass. At optimized process condition, micropatterns etched with modified Bosch process showed nearly vertical sidewall and no silicon grass formation with etch rate of 1.2 ${\mu}{\textrm}{m}$/ min and the size of scallop of 250 nm.

• ETRI Journal
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• v.46 no.3
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• pp.404-412
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• 2024

We propose a method for increasing the bandwidth of a substrate-integrated-waveguide (SIW) cavity-backed antenna with taper-based micro-strip SIW transition feeding. For radio transmission, a circular slot is etched on top of the SIW cavity. For optimal antenna design, the slot is etched slightly away from the cavity center to generate circularly polarized waves. Simulations show a wide axial ratio bandwidth of 7.860% between 11.02 GHz and 11.806 GHz. Experimental results confirm a similar wide axial ratio bandwidth of 4.9% between 10.8 GHz and 11.35 GHz. An SIW feed from an inductive window excites the radiating circular slot, resulting in a simulated wide impedance range of 1.548 GHz (10.338 GHz-11.886 GHz) and bandwidth of 13.93%. Experimental results show a wide impedance of 2.08 GHz (10.2 GHz-12.08 GHz) and bandwidth of 18.84%. The SIW cavity-backed antenna creates a unidirectional pattern, leading to gains of 6.61 dBi and 7.594 dBi in simulations and experiments, respectively. The proposed antenna was fabricated on a Rogers RT/Duroid 5880 substrate, and the reflection coefficient, radiation patterns, and gains were tested and compared using a computer simulator. The developed broadband antenna seems suitable for X-band applications.

• Analytical Science and Technology
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• v.22 no.3
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• pp.247-253
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• 2009

Porous silicon films are electrochemically etched from crystalline silicon wafers in an aqueous solution of hydrofluoric acid(HF). Careful control of etching conditions (current density, etch time, HF concentration) provides films with precise, reproducible physical parameters (morphology, porosity and thickness). The etched pattern could be varied due to (1) current density controls pore size (2) etching time determines depth and (3) complex layered structures can be made using different current profiles (square wave, triangle, sinusoidal etc.). The optical interference spectrum from Fabry-Perot layer has been used for forensic applications, where changes in the optical reflectivity spectrum confirm the identity. We will explore a method of identifying the specific pattern code and can be used for identities of individual code with porous silicon based encoded nanosized smart particles.