• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2006.05a
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• pp.239-242
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• 2006

LCD-BLU (Liquid Crystal Display - Back Light Unit) is one of kernel parts of LCD unit and it consists of several optical sheets(such as prism, diffuser and protector sheets), LGP (Light Guiding Plate), light source (CCFL or LED) and mold frame. The LGP of LCD-BLU is usually manufactured by forming numerous dots with $50{\sim}200$ um in diameter on it by etching process. But the surface of the etched dots of LGP is very rough due to the characteristics of the etching process during the mold fabrication, so that its light loss is high along with the dispersion of light into the surface. Accordingly, there is a limit in raising the luminance of LCD-BLU. In order to overcome the limit of current etched dot patterned LGP, optical pattern design with 50um micro-lens was applied in the present study. The micro-lens pattern fabricated by modified LiGA with thermal reflow process was applied to the optical design of LGP. The attention was paid to the effects of different aspect ratio (i.e. $0.2{\sim}0.5$) of optical pattern conditions to the brightness distribution of BLU with micro-lens patterned LGP. Finally, high aspect ratio micro-lens patterned LGP showed superior results to the one made by low aspect ratio in average luminance.

• The korean journal of orthodontics
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• v.26 no.3
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• pp.309-316
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• 1996

The purpose of this study was to determine the effect of salivary contamination of etched enamel on shear bond strength of a bracket adhered to etched enamel. Eighty extracted human permanent premolars were used in this study. These samples were divided into two groups. Buccal surface of samples were etched in vitro with 38% phosphoric acid for 15 seconds and 60 seconds. Each group was divided into four subgroups. Etched enamel surfaces were contaminated with saliva for 0, 1, 20, 60 seconds, washed and dried. Test surfaces were examined using scanning electron microscope(SEM). The shear bond strength of each sample was determined with a universal testing instrument(Instron Co. Model 4201). Results were as follows; 1. Salivary contamination for 1, 20, 60 seconds did not affect shear bond strength when compared with the uncontaminated enamel group. 2 There was no significant difference(P>.05) in shear bond strength between 15 sec. and 60 sec. etching in uncontaminated enamel groups. 3. When samples were examined using SEM, organic materials coated enamel surface masked the etched pattern partially.

• 제어로봇시스템학회:학술대회논문집
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• 2002.10a
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• pp.46.5-46
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• 2002

As device dimension shrinks down to sub 100nm, it is increasingly important to monitor plasma states. Plasma etching is a key means to fine patterning of thin films. Many parameters are involved in etching and each parameter has different impact on process performances, including etch rate and profile. The uniformity of etch responses should be maintained high to improve device yield and throughput. The uniformity can be measured on any etch response. The most difficulty arises when attempting to characterize etched profile. Conventionally, the profile has been estimated by measuring the slope or angle of etched pattern. One critical drawback in this measurement is that this is unable to cap...

• Restorative Dentistry and Endodontics
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• v.21 no.1
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• pp.136-149
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• 1996

The effects of various All-Etching Agents (10% phosphoric acid, 10% maleic acid and 10 % citric acid) and 32 % phosphoric acid and varied etching time were evaluated by observing the morphology of the etched enamel surfaces using Scanning electron microscopy and by measuring the shear bond strength of a composite resin to human enamel. A total of 156 extracted premolar and molar teeth free of irregularities were employed in this study. Specimens for the observation of enamel morphology were divided into 12 groups of 3 teeth each, based on the type of etchant used and application time. After exposure to the etching agent specimens were washed air-dried and then glued to aluminum stubs and coated with a layer of gold for examination in the scanning electron microscope. Specimens for the evaluation of bond strength were divided into 12 groups of 10 teeth each also based on the type of etchant used and application time. After exposure to the etching agent the specimens were washed, air-dried and a thin layer of bonding agent was applied using a brush. Z 100 composite resin was light cured to the surface and stored at $37^{\circ}C$, 100% humidity for 7 days. An Instron Universal Testing Machine was used to apply a shearing force at $90^{\circ}$ angle from the enamel surface. It is concluded from this study that commercial All-etching agents can be used with a 15-second etching without adversely affecting retention of dental resin materials. At the same time, the acid concentration is probably a suitable compromise regarding the acid's function as a dentin demineralizing all-etch conditioning agent. The following results were obtained. 1. Specimens etched with 10 % citric acid showed a random superficial etching pattern which could not be related to prism morphology. 2. Specimens etched with 10 % and 32 % phosphoric acid and 10 % maleic acid showed a type I pattern in which core material was preferentially removed leaving the prism peripheries relatively intact or a type II pattern in which prism peripheries were preferentially removed. This delineation became more distinguished as etching time was increased. 3. All-Etching Agents and 32 % phosphoric acid showed a statistically significant higher shear bond strength at 15 seconds etching time.(p<0.05) 4. 10 % maleic acid and 32 % phosphoric acid exhibited a statistically significant higher shear bond strength than 10 % phosphoric and citric acid at 15 seconds etching time.(p<0.05).

• Journal of information and communication convergence engineering
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• v.8 no.3
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• pp.263-266
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• 2010

In this paper, a novel defected ground structure (DGS) pattern with enhanced effective capacitance (varactor diode) and a hole in PCB center is presented. The increase in effective capacitance enables the new DGS pattern to achieve a lower resonance than the DGS pattern for the same etched square dimension. The hole in the center also can make resonator frequency lower with better characteristic. According to the tunable characteristic of varactor diode, the resonant frequencies can be tunable. Simulation results show that a lower resonance is achieved with active device, compared to a common DGS pattern.

• Journal of the Korean Electrochemical Society
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• v.11 no.2
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• pp.100-104
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• 2008

Titanium sheet metal substrates used in thin film batteries were wet etched and their surface area was increased in order to increase the discharge capacity and power density of the batteries. To obtain a homogeneous etching pattern, we used a conventional photolithographic process. Homogeneous hemisphere-shaped wells with a diameter of approximately $40\;{\mu}m$ were formed on the surface of the Ti substrate using a photo-etching process with a $20\;{\mu}m{\times}20\;{\mu}m$ square patterned photo mask. All-solid-state thin film cells composed of a Li/Lithium phosphorous oxynitride (Lipon)/$LiCoO_2$ system were fabricated onto the wet etched substrate using a physical vapor deposition method and their performances were compared with those of the cells on a bare substrate. It was found that the discharge capacity of the cells fabricated on wet etched Ti substrate increased by ca. 25% compared to that of the cell fabricated on bare one. High discharge rate was also able to be obtained through the reduction in the internal resistance. However, the cells fabricated on the wet etched substrate exhibited a higher degradation rate with charge-discharge cycling due to the nonuniform step coverage of the thin films, while the cells on the bare substrate demonstrated a good cycling performance.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.448-448
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• 2010

Magnetic random access memory (MRAM) has made a prominent progress in memory performance and has brought a bright prospect for the next generation nonvolatile memory technologies due to its excellent advantages. Dry etching process of magnetic thin films is one of the important issues for the magnetic devices such as magnetic tunneling junctions (MTJs) based MRAM. CoFeB is a well-known soft ferromagnetic material, of particular interest for magnetic tunnel junctions (MTJs) and other devices based on tunneling magneto-resistance (TMR), such as spin-transfer-torque MRAM. One particular example is the CoFeB - MgO - CoFeB system, which has already been integrated in MRAM. In all of these applications, knowledge of control over the etching properties of CoFeB is crucial. Recently, transferring the pattern by using milling is a commonly used, although the redeposition of back-sputtered etch products on the sidewalls and the low etch rate of this method are main disadvantages. So the other method which has reported about much higher etch rates of >$50{\AA}/s$ for magnetic multi-layer structures using $Cl_2$/Ar plasmas is proposed. However, the chlorinated etch residues on the sidewalls of the etched features tend to severely corrode the magnetic material. Besides avoiding corrosion, during etching facets format the sidewalls of the mask due to physical sputtering of the mask material. Therefore, in this work, magnetic material such as CoFeB was etched in an ICP etching system using the gases which can be expected to form volatile metallo-organic compounds. As the gases, carbon monoxide (CO) and ammonia ($NH_3$) were used as etching gases to form carbonyl volatiles, and the etched features of CoFeB thin films under by Ta masking material were observed with electron microscopy to confirm etched resolution. And the etch conditions such as bias power, gas combination flow, process pressure, and source power were varied to find out and control the properties of magnetic layer during the process.

• Journal of Dental Rehabilitation and Applied Science
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• v.22 no.2
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• pp.149-159
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• 2006

Statement of problem. Porcelain repair mainly involves replacement with composite resin, but the bond strength between composite resin and all-ceramic coping materials has not been studies extensively. Purpose. The objective of this study was to investigate the influence of composite resin and ceramic etching pattern on shear bond strength of Empress2 ceramic and observe the change of microstructure of ceramic according to etching methods. Material and methods. Eighty-five cylinder shape ceramic specimens (diameter 5mm, IPS Empress 2 core materials) embeded by acrylic resin were used for this study. The ceramic were specimens divided into sixteen experimental groups with 5 specimens in each group and were etched with phosphoric acid(37%, 65%) & hydrofluoric acid (4%, 9%) according to different etching times(30s, 60s, 120s 180s). All etched ceramic surfaces were examined morphologically using SEM(scanning electron microscopy). Etched surfaces of ceramic specimens were coated with silane (Monobond-S) & adhesive(Heliobond) and built up composite resin using Teflon mold. Accomplished specimens were tested under shear loading until fracture on universal testing machine at a crosshead speed 1mm/min; the maximum load at fracture(kg) was recorded. Shear bond strength data were analyzed with one way ANOVA and Duncan tests.(P<.05) Results. Maximum shear bond strength was $30.07{\pm}2.41(kg)$ when the ceramic was etched with 4% hydrofluoric acid at 120s. No significant difference was found between phosphoric etchant group and control group with respect to shear bond strength. Conclusion. Empress 2 ceramic surface was not etched by phosphoric acid, but etched by hydrofluoric acid.

• Journal of information and communication convergence engineering
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• v.5 no.1
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• pp.42-44
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• 2007

The a-Si:H TFTs decreasing parasitic capacitance of source-drain is fabricated on glass. The structure of a-Si:H TFTs is inverted staggered. The gate electrode is formed by patterning with length of $8{\mu}m{\sim}16{\mu}m$ and width of $80{\sim}200{\mu}m$ after depositing with gate electrode (Cr) $1500{\AA}$ under coming 7059 glass substrate. We have fabricated a-SiN:H, conductor, etch-stopper and photoresistor on gate electrode in sequence, respectively. The thickness of these, thin films is formed with a-SiN:H ($2000{\mu}m$), a-Si:H($2000{\mu}m$) and $n^+a-Si:H$ ($500{\mu}m$). We have deposited $n^+a-Si:H$, NPR(Negative Photo Resister) layer after forming pattern of Cr gate electrode by etch-stopper pattern. The NPR layer by inverting pattern of upper gate electrode is patterned and the $n^+a-Si:H$ layer is etched by the NPR pattern. The NPR layer is removed. After Cr layer is deposited and patterned, the source-drain electrode is formed. The a-Si:H TFTs decreasing parasitic capacitance of source-drain show drain current of $8{\mu}A$ at 20 gate voltages, $I_{on}/I_{off}$ ratio of ${\sim}10^8$ and $V_{th}$ of 4 volts.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.863-866
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• 2008

For the cost reduction in the fabrication of display panels, a reverse moving system was equipped to a compacted in-line wet etch/cleaning system. For the effect of the alternating movement of substrate on the wet etch process, ITO layers were etched in various moving modes of substrates and the results were compared and analyzed.