• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 춘계학술대회 논문집
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• pp.70-71
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• 2009

Photoelectric characteristics of a hydrogenated amorphous silicon thin film transistor(a-Si:H TFT) were obtained for the illumination from various backlight sources and the results were compared and analyzed in terms of the photon energy spectral characteristics of the backlights obtained from the integration of the multiplication of the photon energy and the spectral intensity at etch wavelength. It was possible to conclude that the absorption of illuminated backlight to a-Si:H layer and the generation of electrons and holes are mainly carried out at the wavelength less than 500nm.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 춘계학술대회 논문집 전자세라믹스 센서 및 박막재료 반도체재료 일렉트렛트 및 응용기술
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• pp.56-59
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• 2000

In this study, Ferroelectric $Pb(Zr_x,Ti_{1-x})O_3$(x=0.53) thin films were fabricated by the spin-coating on the Pt/Ti/$SiO_2$/Si substrate using the PZT metal alkoxide solutions with various excess Pb contents. Etching of PZT film was performed using planar inductively coupled Ar(20)$/Cl_2/BCl_3$ plasma. The etch rate of PZT film was 2450 ${\AA}/min$ at Ar(20)$/BCl_3$(80) gas mixing ratio and substrate temperature of $80^{\circ}C$. The leakage current densities of before etching and after etching PZT thin film were $6.25\times10^{-8}A/cm^2$, $8.74\times10^{-7}A/cm^2$ with electric field of 0.07MV/em, respectively.

• 통합자연과학논문집
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• 제2권1호
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• pp.45-49
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• 2009

Electrochemical etching of heavily doped p-type silicon wafers (boron doped, <100> orientation, resistivity; $0.8-1.2m{\Omega}/cm$) with different current density resulting two different refractive indices resulted in DBR (Distributed Bragg Reflectors) porous silicon, which exhibited strong in-plane anisotropy of refractive index (birefringence). Dielectric stacks of birefringent porous silicon acting as distributed Bragg reflectors have two distinct reflection bands depending on the polarization of the incident linearly polarized light. This effect is caused by a three-dimensional (in plane and in depth) variation of the refraction index. Optical characteristics of DBR porous silicon were investigated.

• 통합자연과학논문집
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• 제4권3호
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• pp.192-196
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• 2011

New method to encode multiple photonic features of Bragg type reflector on silicon wafer has been investigated. Multiple bit encodes of distributed Bragg reflector features have been prepared by electrochemical etching of crystalline silicon by using various square wave current densities. Optical characterization of multi-encoding of distributed Bragg reflectors on porous silicon was achieved by Ocean optics 2000 spectrometer for the search of possible applications of multiple bit encoding of distributed Bragg reflectors such as multiplexed assays and chemical sensors. The morphology and cross-sectional structure of multi-encoded distributed Bragg reflectors was investigated by field emission scanning electron micrograph.

• 전자공학회논문지A
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• 제33A권12호
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• pp.65-71
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• 1996

A novel lateral field emitter triode has been designed and fabricated. It has self-vacuum environmets and low turn-on voltage, so that the chief problems of previous field emission devices such as additional vacuum sealing process and high turn-on voltage are settled. An in-situ vaccum encapsulation empolying recessed cavities by isotropic RIE (reactive ion etch) method and an electron beam evaporated molybdenum vacuum seals are implemented to fabricate the new field emitter triode. The device exhibits low turn-on voltage of 7V, stabel current density of 2.mu.A/tip at V$_{AC}$ = 30V, and high transconductance (g$_{m}$) of 1.7$\mu$S at V$_{AC}$ = 22V. The superb device characteristics are probably due to sub-micron dimension device structure and the pencil type lateral cathode tip employing upper and lower LOCOS oxidation.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2002년도 하계종합학술대회 논문집(2)
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• pp.201-204
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• 2002

A large area inductively coupled plasma which is applicable to LCD processing is built with a modified single loop RF antenna. Combination of parallel and series paths of RF current through the antenna induces local enhancement of plasma density, which in turn provides uniform plasma density near the substrate. The plasma density distribution is measured and compared with that of the conventional single loop antenna. Aisotropic etching of photoresist is performed, and it is found that etch uniformity is improved by 3％ from 15% of the conventional etcher over 350$\times$300mm glass substrates. Photoresist etching rate and uniformity can be further improved by applying a periodic weak axial magnetic fieid.

• 대한치과보존학회:학술대회논문집
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• 대한치과보존학회 2001년도 추계학술대회(제116회) 및 13회 Workshop 제3회 한ㆍ일 치과보존학회 공동학술대회 초록집
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• pp.560.1-560
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• 2001

To evaluate the micro-shear bond strength of current adhesive systems to cervical and mid-coronal enamel. Materials and Two commercially available resin adhesives were investigated; a self-etching primer system(Clearfil SE Bond, Kyraray) and a one-bottle adhesive system(Single Bond, 3M) intended for use with the total-etch wet-bonding technique were employed. Two regions of enamel, cervical and mid-coronal regions, were chosen from the buccal surface of extracted molars and were then bonded with each adhesive system and submitted to the micro-shear bond test.(중략)

• 통합자연과학논문집
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• 제3권4호
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• pp.237-240
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• 2010

Recently, number of studies for porous silicon have been investigated by many researchers. Multistructured porous silicon (PSi), distributed Bragg reflector (DBR) PSi, has been a topic of interest, because of its unique optical properties. DBR PSi were prepared by an electrochemical etch of $P^{{+}{+}}$-type silicon wafer of resistivity between 0.1 $m{\Omega}cm$ with square wave current density, resulting two different refractive indices. In this work, We have fabricated a simple and portable organic vapor-sensing device based on DBR porous silicon and investigated the optical characteristics of DBR porous silicon. DBR porous silicon have been characterized by FT-IR, Ocean optics 2000 spectrometer. The device used DBR PSi chip has been demonstrated as an excellent gas sensor, showing a great senstivity to a toxic vapor (TEP, DMMP, DEEP) at room temperature.

• 전자공학회논문지A
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• 제33A권4호
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• pp.112-120
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• 1996

With the MOsES (mask oxide sidewall etch scheme)process which uses the conventional i-line stepper and isotropic wet etching, CMOSFET's with fine gate pattern of 0.1.mu.m CMOSFET device, the screening oxide is deposited before the low energy ion implantation for source/drain extensions and two step sidewall scheme is adopted. Through the characterization of 0.1.mu.m CMOSFET device, it is found that the screening oxide deposition sheme has larger capability of suppressing the short channel effects than two step sidewall schem. In cse of 200.angs.-thick screening oxide deposition, both NMOSFET and PMOSFET maintain good subthreshold characteristics down to 0.1.mu.m effective channel lengths, and show affordable drain saturation current reduction and low impact ionization rates.

• Transactions on Electrical and Electronic Materials
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• 제9권2호
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• pp.62-66
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• 2008

We report on the growth mechanism of vertically aligned carbon nanotubes (VACNTs) using ultra thin Ni catalysts and direct current plasma enhanced chemical vapor deposition (PECVD) system. The CNTs were grown with -600 V bias to substrate electrode and catalyst thickness variation of 0.07 nm to 3 nm. The CNT density was reduced with catalyst thickness reduction and increased growth time. Cone like CNTs were grown with ultra thin Ni thickness, and it results from an etch of carbon network by reactive etchant species and continuous carbon precipitation on CNT walls. Vertically aligned sparse CNTs can be grown with ultra thin Ni catalyst.