• Journal of the Optical Society of Korea
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• v.14 no.4
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• pp.298-304
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• 2010

The pair-induced quenching (PIQ) effect in a highly doped bismuth oxide-based erbium-doped fiber amplifier (EDFA) was theoretically and experimentally investigated. In the theoretical investigation, the bismuth oxide-based EDFA was modeled as a 6-level amplifier system that incorporated clustering-induced concentration quenching, cooperative up-conversion, pump excited state absorption (ESA), and signal ESA. The relative number of paired ions in a highly doped bismuth oxide EDF was estimated to be ~6.02%, determined by a comparison between the theoretical and the experimentally measured gain values. The impacts of the PIQ on the gain and the noise figure were also investigated.

• Korean Journal of Optics and Photonics
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• v.21 no.4
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• pp.139-145
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• 2010

A complete modeling of erbium-doped Bismuth-oxide fibers with a high doping concentration is presented. A 6-level amplifier system that incorporated clustering-induced concentration quenching, cooperative upconversion, pump excited state absorption (ESA), and signal ESA, was adopted for the modeling. The accuracy of the modeling was verified by comparing the calculated gain and noise figure with experimentally obtained ones.

• Korean Journal of Materials Research
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• v.29 no.12
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• pp.747-752
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• 2019

Environmental pollution remains a considerable health risk source all over the world; however, hazards are usually higher in developing countries. Iraq has long been suffering from the problem of pollution and how to treat pollution. Photocatalytic degradation has turned out to be most productive process for dye degradation. In this investigation, Rhodamine B (RhB), dye has been selected for degradation under visible light illumination. To address this issue, we fabricate erbium trioxide nanoparticles (Er₂O₃/NPs). Erbium trioxide nanoparticles are prepared and utilized for photo-catalytic degradation. The characterization of Er₂O₃/NPs is described and confirmed by utilizing of XRD (X-ray diffraction) and SEM (Scanning Electron Microscopy). The average size of Er₂O₃ nanoparticles is observed to be 16.00 nm. Er₂O₃/NPs is investigated for its ability of photo-catalytic degradation through certain selected parameters such as concentration and time. The methodological results show that the synthesized Er₂O₃/NPs is a good photo-catalytic for Rhodamine degradation.

• JSTS:Journal of Semiconductor Technology and Science
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• v.4 no.2
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• pp.94-99
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• 2004

silicided 50-nm-gate-length n-type Schottky barrier metal-oxide-semiconductor field-effect-transistors (SB-MOSFETs) with 5 nm gate oxide thickness are manufactured. The saturation current is $120{\mu}A/{\mu}m$ and on/off-current ratio is higher than $10^5$ with low leakage current less than $10{\mu}A/{\mu}m$. Novel phenomena of this device are discussed. The increase of tunneling current with the increase of drain voltage is explained using drain induced Schottky barrier thickness thinning effect. The abnormal increase of drain current with the decrease of gate voltage is explained by hole carrier injection from drain into channel. The mechanism of threshold voltage increase in SB-MOSFETs is discussed. Based on the extracted model parameters, the performance of 10-nm-gate-length SB-MOSFETs is predicted. The results show that the subthreshold swing value can be lower than 60 mV/decade.

• JSTS:Journal of Semiconductor Technology and Science
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• v.5 no.2
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• pp.69-76
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• 2005

Interface-trap density, lifetime and Schottky barrier height of erbium-silicided Schottky diode are evaluated using equivalent circuit method. The extracted interface trap density, lifetime and Schottky barrier height for hole are determined as $1.5{\times}10^{13} traps/cm^2$, 3.75 ms and 0.76 eV, respectively. The interface traps are efficiently cured by $N_2$ annealing. Based on the diode characteristics, various sizes of erbium- silicided/platinum-silicided n/p-type Schottky barrier metal-oxide-semiconductor field effect transistors (SB-MOSFETs) are manufactured from 20 m to 35nm. The manufactured SB-MOSFETs show excellent drain induced barrier lowering (DIBL) characteristics due to the existence of Schottky barrier between source and channel. DIBL and subthreshold swing characteristics are compatible with the ultimate scaling limit of double gate MOSFETs which shows the possible application of SB-MOSFETs in nanoscale regime.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.75-76
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• 2007

Poly-Si Schottky barrier Thin Film Transistor (SB-TFT) is manufactured with erbium silicided source/drain. High quality poly-Si film was obtained by crystallizing the amorphous Si film with Excimer laser annealing (ELA) method. The fabricated poly-Si SB-TFT devices showed low leakage current and large on/off current ratio. Moreover, the electrical characteristics were considerably improved by 3% $H_2/N_2$ gas annealing, which is attributed to the reduction of trap states at the grain boundaries and interface trap states at gate oxide/poly-si channel.

• Transactions on Electrical and Electronic Materials
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• v.11 no.5
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• pp.216-221
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• 2010

The microstructure, electrical properties, and DC-accelerated aging behavior of the Zn-Pr-Co-Cr-Y-Er (ZPCC-YE) varistors were investigated for different amounts of erbium oxide ($Er_2O_3$). The microstructure consisted of zinc oxide grain and an intergranular layer ($Pr_6O_{11}$, $Y_2O_3$, and $Er_2O_3$-rich phase) as a secondary phase. The increase of $Er_2O_3$ amount decreased the average grain size and increased the sintered density. As the $Er_2O_3$ amount increased, the breakdown field increased from 5094 V/cm to 6966 V/cm and the nonlinear coefficient increased from 27.8 to 45.1. The ZPCC-YE varistors added with 0.5 to 1.0 mol% $Er_2O_3$ are appropriate for high voltage, with high nonlinearity and stability against DC-accelerated aging stress.

• Journal of the Korean Ceramic Society
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• v.51 no.6
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• pp.612-617
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• 2014

The microstructure, nonlinear properties, and impulse clamping characteristics of Pr/Co/Cr/Al co-doped zinc oxide ceramics were investigated with various contents of $Er_2O_3$. Increasing $Er_2O_3$ content increased the density of the sintered pellets from 5.69 to $5.83g/cm^3$, and decreased the average grain size from 10.6 to $6.5{\mu}m$. With increased $Er_2O_3$ content, the breakdown field increased from 2318 to 4205 V/cm, and the nonlinear coefficient increased from 19.4 to 40.2. The clamp characteristics were improved with the increase of the content of $Er_2O_3$. The varistors doped with 2.0 mol% exhibited the best clamp characteristics, in which the clamp voltage ratio was 1.40-1.73 at 1-50 A in an impulse current.

• Journal of the Korean Ceramic Society
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• v.42 no.1
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• pp.16-21
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• 2005

The effect of additive composition, using AlN and $Er_{2}O_{3}$ as sintering additives, on the mechanical properties of liquid-phase-sintered, and subsequently annealed SiC ceramics was investigated. The microstructures developed were quantitatively analyzed by image analysis. The average thickness of SiC grains increased with increasing the $Er_{2}O_{3}/(AlN + Er_{2}O_{3})$ ratio in the additives whereas the aspect ratio decreased with increasing the ratio. The mechanical properties versus $Er_{2}O_{3}/(AlN + Er_{2}O_{3})$ ratio curve had a maximum; i.e., there was a small composition range at which optimum mechanical properties were realized. The best results were obtained when the ratio ranged from 0.4 to 0.6. The flexural strength and fracture toughness of the SiC ceramics were $550\~650\;MPa$ and $5.5\~6.5$ MPa${\cdot}m^{1/2}$, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.129-130
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• 2008

Polycrystalline silicon (poly-Si) Schottky barrier thin film transistors (SB-TFT) are fabricated by erbium silicided source/drain for n-type SB-TFT. High quality poly-Si film were obtained by crystallizing the amorphous Si film with excimer laser annealing (ELA) or solid phase crystallization (SPC) method. The fabricated poly-Si SB-TFTs have a large on/off current ratio with a low leakage current. Moreover, the electrical characteristics of poly-Si SB TFTs are significantly improved by the additional forming gas annealing in 2 % $H_2/N_2$, because the interface trap states at the poly-Si grain boundaries and at the gate oxide/poly-Si channel decreased.