• 한국정보디스플레이학회:학술대회논문집
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• 2002.08a
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• pp.83-86
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• 2002

This paper presents a new self-erasing discharge mode for the improvement of luminous efficiency and color purity of an AC plasma display panel (AC PDP). A new self-erasing discharge mode is produced between successive sustain pulses. by simultaneously applying the auxiliary short pulses at the falling edge of the sustain pulses without cross-talk during a sustain period. As a result. the luminous efficiency and color gamut are improved by 16% and 5%, respectively.

• Transactions on Electrical and Electronic Materials
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• v.7 no.3
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• pp.141-144
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• 2006

In the present work, we investigated the holographic grating erasing method by means of the optical method. It was formed the grating under the interference of holographic recording He-Ne laser beams on chalcogenide $As_{40}Ge_{10}Se_{15}S_{35}$ thin film with various film thickness and erased the holographic grating by non-polarized He-Ne laser beam. As the results, the recording grating erased the 80 % of formed grating by non-polarized He-Ne laser beam. It was confirmed that the erasing characteristics by non-polarized laser beam need to improve the focusing of beam and the control of beam intensity. And then it can be expected as the application possibility of rewritable holographic memory technology.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.7-8
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• 2008

The memory characteristics of charge trap flash (CTF) with $HfO_2$ charge trap layer were investigated. Especially, we focused on the effects of tunnel barrier engineering consisted of $SiO_2/Si_3N_4/SiO_2$ (ONO) stack or $Si_3N_4/SiO_2/Si_3N_4$ (NON) stack. The programming and erasing characteristics were significantly enhanced by using ONO or NON tunnel barrier. These improvement are due to the increase of tunneling current by using engineered tunnel barrier. As a result, the engineered tunnel barrier is a promising technique for non-volatile flash memory applications.

• Korean Journal of Construction Engineering and Management
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• v.5 no.4 s.20
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• pp.139-146
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• 2004

Resent removal work for road signs has been labor intensive and required times since it has been done manually using shaving type equipment. While traditional process is conducting, there are traffic jams caused by the passing control, and happened unexpected accidents to workers working at dangerous road circumstance. Besides, in current shaving method, there are high potentialities on the air pollution as well as the explosive accident occurred by using a propane gas. So, as an alternative, we have studied to develop the automatic erasing equipment made up with a high pressure water-jet system and automatic control system, mobile system; Wate-rjet system consists of an intensifier and nozzles to give a high pressure and spray on the sign, and automatic control system is composed of one axis robot using a hydraulic servo actuator controlled by a lever, And as a mobile system, a truck plays an important role for the transport of equipment and the forward movement in a removal process. In this paper, we have analyzed the characteristics of road signs and have investigated current erasing methods in the field. And we have organized and designed automatic erasing equipment, and we have made a basic experiment to find out the optimal spray condition as like the spray distance, spray angle and injection pressure.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.199-199
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• 2008

이 실험은 NVM의 Oxide, Nitride, Oxide nitride층별 blocking, trapping and tunneling 속성에 대해서 밝히고자 한다. gate 전극은 값싸고 전도도가 좋은 알루미늄을 사용한다. 유리기판위에 Silicon nitride층을 20nm로 코팅하고 Silicon dioxide층을 10nm로 코팅한다. 그리고 amorphous Silicon material이 증착된다. Poly Silicon은 Solid Phase Crystallization 방법을 사용하였다. 마지막 공정으로 p-doping은 ion shower에 의한 방법으로 drain과 source 전극을 생성하였다. gate가 biasing 될 때, p-channel은 source와 drain 사이에서 형성된다. Oxide Nitride Oxide nitride (ONO) 층은 각각 12.5nm/20nm/2.3nm의 두께로 만들었다. 전하는 Program process 중에 poly Silicon층에서 Silicon Oxide nitride tunneling층을 통하여 움직이게 된다. 그리고 전하들은 Silicon Nitride층에 머무르게 된다. 그 전하들은 erasing process 중에 trapping 층에서 poly Silicon 층으로 되돌아 간다. Silicon Oxide blocking층은 trapping층으로 전하가 나가는 것을 피하기 위하여 더해진다. 이 논문에서 Programming process와 erasing process의 Id-Vg 특성곡선을 설명한다. Programming process에 positive voltage를 또는 erasing process에 negative voltage를 적용할 때, Id-Vg 특성 곡선은 왼쪽 또는 오른쪽으로 이동한다. 이 실험이 보여준 결과값에 의해서 10년 이상의 저장능력이 있는 메모리를 만들 수 있다. 그러므로, NVM의 중요한 두 가지 성질은 유지성과 내구성이다.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.932-934
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• 2006

A relationship between discharge delay time and the aging method were investigated: A-Y (Address electrode - Scan electrode) aging and conventional X-Y(Common electrode - Scan electrode) aging with the variation of sustain voltage beyond self-erasing discharge. Although A-Y aging decreases discharge delay time, it has several drawbacks like non-uniformity of discharge, degradation of luminous efficiency and a color temperature. In a conventional aging condition which is carried out near the mid-margin voltage, discharge delay time is short in low voltage and high frequency condition. As an alternative to conventional voltage aging, high voltage aging is suggested which is carried out at self-erasing sustain voltage region. High voltage aging shows lower discharge delay time and fast aging speed than conventional voltage aging.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.19-19
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• 2008

We investigated the programmable memory characteristics of nanoparticle-based memory devices based on the elementary metal nanoparticles (Co and Au) and their binary mixture synthesized by a micellar route to ordered arrays of metal nanoparticles as charge trapping layers. According to the metal nanoparticle species quite different programming/erasing efficiencies were observed, resulting in the tunable memory characteristics at the same programming/erasing bias conditions. This finding will be a good implication for further device scaling and novel device applications since most processes are based on the conventional semiconductor processes.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.505-508
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• 2001

Currently there is much interested in removing latent charge that is caused to latent image effect and blurring of obtained image as well as reduction of x-ray conversion efficiency in digital radiography system. To remove latent charge a-Se film is irradiated by light with 3500 lux using halogen lamp and optical fiber. We measured dark current and photosensitivity to analyze removing effect of latent charge, then compared with and without light erasing method. The reduction of measured signal due to latent charge effect was 32.5 %, and the removal effect of latent charge by using light erase method was its 95.5 %.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.505-508
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• 2001

Currently there is much interested in removing latent charge that is caused to latent image effect and blurring of obtained image as well as reduction of x-ray conversion efficiency in digital radiography system. To remove latent charge a-Se film is irradiated by light with 3500 lux using halogen lamp and optical fiber. We measured dark current and photosensitivity to analyze removing effect of latent charge, then compared with and without light erasing method. The reduction of measured signal due to latent charge effect was 32.3%, and the removal effect of latent charge by using light erase method was its 95.5%.

• Proceedings of the KIEE Conference
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• 2006.07c
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• pp.1428-1429
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• 2006

We investigated the diffraction efficiency, erasing property and rewriting property of diffraction grating with each wavelength of recording beam. A (P:P) polarized light was exposed on AsGeSeS and Ag/AsGeSeS thin film to form a diffraction grating by HeNe(635nm) laser and DPSS(532nm) laser. At the maximum efficiency condition, unpolarized HeNe laser beam was irradiated to erase 1ha generated diffraction grating. The HeNe laser showed more higher diffraction efficiency and the DPSS laser showed more faster diffraction grating time. At erasing and rewriting process, AsGeSeS(61%-85%)thin film showed better property than Ag doped Ag/AsGeSeS(53%-63%) double layer structured thin film.