• Transactions on Electrical and Electronic Materials
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• v.8 no.3
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• pp.131-134
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• 2007

An $ITO/Alq_3/Al$ structure was used to study complex impedance of $Alq_3$ based organic light-emitting diodes. Equivalent circuit was analyzed in a device structure of $ITO/Alq_3/Al$ with a thickness layer of $Alq_3$ of 100 nm. The obtained impedance was able to be fitted using equivalent circuit model of parallel combination of resistance $R_p$ and capacitance $C_p$ with a small series resistance of $R_s$.

• Journal of Welding and Joining
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• v.12 no.4
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• pp.127-140
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• 1994

Resistance spot welding has been widely used in the sheet metal joining processes because of its high productivity and convenience. In the resistance spot welding processes the size of molten nugget is a criterion to assess weld quality. Many research have founded on measuring weld nugget size at the same time monitoring welding process parameters such as dynamic resistance and electrode movement. With increasing demand of energy saving, many efforts were made to employ aluminum alloys that are lighter than steel and have relatively equivalent strength to steel in the automobile industry. In this paper, spot weldability of aluminum alloys for various welding conditions were examined by series of experiments. One of the 6000 series (Mg-Si) aluminum alloy, 6383-T4 was chosen, which is currently considered as a substitute for the galvanized steel. Dynamic resistance, electrode movement and corresponding nugget size were observed and compared to the case of steel. Finally, resistance spot welding of dissimilar material (galvanized steel-aluminum alloy) was attempted.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.58 no.2
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• pp.207-213
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• 2009

Electrolytic capacitors have been widely used in power electronics system because of the features of large capacitance, small size, high-voltage, and low-cost. Electrolytic capacitors, which is most of the time affected by aging effect, plays a very important role for the power electronics system quality and reliability. Therefore it is important to estimate the parameter of an electrolytic capacitor to predict the failure. This paper proposed a novel fault diagnosis method of an electrolytic capacitor used for voltage smoothing in boost DC converter. The equivalent series resistance(ESR) of electrolytic capacitor estimated from FFT result of filtered waveform of capacitor voltage/current. Main advantage of the proposed method include circuit simplicity and easy implementation. Simulation and experimental results are shown to verify the performance of the proposed method.

• The Transactions of the Korean Institute of Power Electronics
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• v.12 no.5
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• pp.372-377
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• 2007

This paper proposes a novel fault diagnosis method of a electrolytic capacitor used for DC-link voltage smoothing in adjustable speed drives. The equivalent series resistance (ESR) of the electrolytic capacitor is directly estimated from DC-link voltage and load currents and the status of the electrolytic capacitor is determined from the estimated ESR. To compensate the variation of the ESR owing to temperature variation, diodes are located on the same PCB near the capacitor and the temperature of the capacitor is sensed indirectly from the voltage drop of diodes. Simulation and experimental studies show the effectiveness of the proposed method.

• Journal of the Korean Society of Manufacturing Technology Engineers
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• v.25 no.4
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• pp.307-311
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• 2016

Several types of supercapacitors have been developed for energy storage systems. Among them, the hybrid type has advantages such as a large capacitance per weight compared with the electric double-layer capacitator type. In this study, constant current charging and discharging tests were conducted for recently developed hybrid-type supercapacitors. Based on the experimental results, the capacitance and equivalent series resistance were obtained. The capacitance was larger than the designed capacitance at a low current but became small at a high current. In addition, the capacitance depended on the cell voltage. These results can be used to design an energy storage system.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.59 no.4
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• pp.372-376
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• 2010

Electrolytic capacitors have been widely used in power electronics system because of the features of large capacitance, small size, high-voltage, and low-cost. Electrolytic capacitors, which is most of the time affected by aging effect, plays a very important role for the power electronics system quality and reliability. Therefore it is important to estimate the parameter of an electrolytic capacitor to predict the failure. The estimation of the equivalent series resistance(ESR) is important parameter in life condition monitoring of electrolytic capacitor. This paper proposes a simple technique to measure the ESR of an electrolytic capacitor. This method uses a switching DC/DC boost converter to measure the DC Bus capacitor ESR of power converter. Main advantage of the proposed method is very simple in technique, consumes very little time and requires only simple instruments. Simulation results are shown to verify the performance of the proposed method.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.15 no.6
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• pp.590-598
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• 2004

An active capacitance circuit which employs series feedback network for the implement of negative resistance and low noise operation is analyzed in depth and its application to low noise active RF BPF's is discussed. Whereas many authors reported a lot of circuits that embody negative resistance circuit most of them have concerns for the equivalent resistance and reactance value at the center frequency. In this case, it could be possible to face a problem that the negative resistance circuit becomes unstable, or have poor flatness in passband because of insufficient forecast for the negative resistance values as the frequency goes higher or lower. In this paper, we extracted the exact equivalent values of this circuit and analyzed the RF characteristics with the varying the values of active devices and feedback circuits and presented the method that the flatness of passband can be improved. We have designed a 4-pole active BPF, which has the bandwidth of 60 ㎒, 0.67 ㏈ insertion loss, 0.3 ㏈ ripple, and noise figure of 3.0 ㏈ at 1.99 ㎓ band.

• JSTS:Journal of Semiconductor Technology and Science
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• v.2 no.1
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• pp.1-6
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• 2002

A new closed-form expressions to calculate frequency-dependent distributed inductance and the associated distributed series resistance of single interconnect on a lossy silicon substrate (CMOS technology) are presented. The proposed analytic model for series impedance is based on a self-consistent field method and the vector magnetic potential equation. It is shown that the calculated frequency-dependent distributed inductance and the associated resistance are in good agreement with the results obtained from rigorous full wave solutions and CAD-oriented equivalent-circuit modeling approach.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.04a
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• pp.5-8
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• 2004

We have investigated equivalent-circuit analysis of organic light-emitting diodes using frequency-dependent response of $ITO/Alq_3(60nm)/Al$ device at two different bias voltages. Complex impedance Z of the device was measured in the frequency range of 40Hz~1MHz. A Cole-Cole plot shows that there are two dielectric relaxations at the bias below turn-on voltage, and one relaxation at the bias above turn-on voltage. We are able to interpret the frequency-dependent response in terms of equivalent-circuit model of contact resistance $R_s$ in series with parallel combination of resistance $R_p$ and capacitance $C_p$. We have obtained contact resistance $R_s$ around $90{\Omega}$, mainly from the ITO anode.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.438-439
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• 2006

We have used ITO/$Alq_3$/Al structure to study complex impedance in $Alq_3$ based organic light emitting diode. Equivalent circuit was analyzed in a device structure of ITO/$Alq_3$/Al by varying the thickness of $Alq_3$ layer from 60 to 400nm. The impedance results can be fitted using equivalent circuit model of parallel combination resistance $R_p$ and capacitance $C_p$ with a small series resistance $R_s$.