• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
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• pp.156-159
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• 2003

The stochiometric mixture of evaporating materials for the $CuInTe_2$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, $CuInTe_2$ mixed crystal was deposited on throughly etched GaAs(100) by the Hot Wall Epitaxy(HWE) system. The source and substrate temperature were $610^{\circ}C\;and\;450^{\circ}C$ respectively, and the growth rate of the single crystal thin films was about $0.5{\mu}m/h$. The crystalline structure of single crystal thin films was investigated by the double crystal X-ray diffraction(DCXD). From the photocurrent spectra, we have found that values of spin orbit coupling ${\Delta}So$ and crystal field splitting ${\Delta}Cr$ ware $0.283{\underline{3}}eV\;and\;0.120{\underline{0}}eV$, respectively.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2000년도 제18회 학술발표회 논문개요집
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• pp.122-122
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• 2000

Magnesium oxide is thermodynamically very stable, has a low dielectric constant and a low refractive index, and has been widely used as substrate for growing various thin film materials, particulary oxides of the perovskite structure. There has been a considerable interest in integrating the physical properties of these oxides with semiconductor materials such as GaAs and Si. In this regard, it is considered very important to be able to grow MgO buffer layers epitaxially on the semiconductors. Various oxide films can then be grown on such buffer layers eliminating the need for using MgO single crystal substrates. Vapor phase epitaxy of magnesium oxide has been accomplished on Si(001) substrates in a high vacuum chamber using the single precursor methylmagnesium tert-butoxide in the temperature range 750-80$0^{\circ}C$. For the epitaxy of the MgO films, SiC buffer layers had to be grown on Si(001). The films were characterized by reflection high energy electron diffraction (RHEED) in situ in the growth chamber, and x-ray diffraction (XRD), x-ray pole figure analysis, scanning electron microscopy (SEM), and x-ray photoelectron spectroscopy (XPS) after the growth.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.202.1-202.1
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• 2013

ZnO nanostructure was fabricated on a Si substrate using two-step growth. The seed layer was grown on the Si substrate by a sol-gel spin-coating. In the first step, ZnO nanorods were grown by a hydrothermal method at $140^{\circ}C$ for 5 min. In the second step, a ZnO thin film was grown on the ZnO nanorods by spin-coating. After growth, these films were annealed at $800^{\circ}C$ for 10 min. Electrical and optical properties of ZnO nanostructures have modified by plasma-assisted molecular beam epitaxy (PA-MBE) regrowth. The carrier concentration and resistivity increased by PA-MBE regrowth. In the photoluminescence, the full width at half maximum and intensity were decreased and increased, respectively, by PA-MBE regrowth.

• 한국자기학회지
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• 제21권3호
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• pp.93-98
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• 2011

Laser Molecular-Beam Epitaxy 방법을 사용하여 $La_{0.35}Pr_{0.35}Ca_{0.3}MnO_3$(LPCMO)/$LaAlO_3$(LAO) 초격자를 성공적으로 증착하였으며 이의 열처리 전후 결정학적, 자기적 특성을 LPCMO 단층박막, 그리고 LPCMO/$SrTiO_3$(STO) 초격자와 비교 분석하였다. LPCMO 단층박막, 그리고 LPCMO/STO 초격자 단층박막의 경우, 표면이 열처리 전후 모두 거친 양상을 보인 것과는 달리 LPCMO/LAO 초격자 박막은 열처리 전후 모두 상대적으로 매우 매끈하였다. 열처리 후 단층박막, 초격자 박막 시료 모두 강자성 특성이 향상되었으며 특히 초격자의 경우에는 이러한 현상이 두드러졌다. 열처리 후에 보자력과 포화자기장이 감소하는 LPCMO 단층박막과는 달리 LPCMO/LAO 초격자의 경우, 열처리 후에도 보자력은 열처리 전과 같은 값을 보였으며 단층박막과는 반대로 포화자기장은 오히려 증가하였다. 이러한 자기적 특성은 절연체 사이에 강자성체가 끼여 있는 초격자라는 결정구조에서 기인하는 것으로 이해된다.

• 대한전자공학회논문지
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• 제22권1호
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• pp.34-40
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• 1985

시스뎀 압력이 1.0 기압[대기압 공정]일 경우와 0.1 기압(감압 공정)일 경우에 대해, SiH2Cl2를 사용했을 때의 에퍼택셜층 및 폴리실리콘의 성장 현상과 HCI을 사용했을 때의 이것들의 에칭 현상을 조사하였다. 실험적으로 구한 성장 속도 및 에칭 속도에 대한 식들로부터 Sih2Cl2와 HCI을 혼합하여 사용할 경우에 대한 선화적 에퍼택시가 가능한 공정 조건이 예측되었다. 그 결과, 선택적 에퍼택셜 성장 영역이 감압 공정에서는 실험 범위내에서 존재하였지만 대기압 공정에서는 존재하지 않는 것으로 나타났다. 이 것은 대기압과 감압에서의 성장 속도 및 에칭 속도가 차이가 나기 때문에 기인하는 것이다.

• 한국결정성장학회지
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• 제13권3호
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• pp.127-131
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• 2003

Zincblende 구조를 갖는 양질의 ZnTe(100) 박막을 $CaAs(100\pm2^{\circ})$ 기판에 HWE법으로 성장하였다 기판온도에 따른 표면상태와 성장률 그리고 결정성의 변화를 관측하였고, 기판온도가 $470^{\circ}C$일 때 결정성이 가장 우수하였다. 10K 광발광 측정으로부터 열적 인장스트레인에 의하여 분리된 가벼운 양공과 무거운 양공을 관측하였고 이들의 일차 들뜬상태를 관측하였다 무거운 양공의 자유 엑시톤의 이중구조는 엑시톤-폴라리톤 결합에 의한 세로방향 엑시톤과 가로방향 엑시톤 사이의 에너지 차이 때문이다.

• 한국표면공학회지
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• 제43권4호
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• pp.176-179
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• 2010

The InAs thin films were grown on GaAs(100) substrate with $2^{\circ}C$ tilted toward [$0\bar{1}\bar{1}$] with different As beam equivalent pressure (BEP) by using molecular beam epitaxy. Growth temperature and thickness of the InAs thin films were $480^{\circ}C$ and 0.5 ${\mu}m$, respectively. We studied the relation between the As BEP and the properties of InAs thin films. The properties of InAs thin films were observed by reflection high-energy electron diffraction (RHEED), optical microscope, and Hall effect. The growth, monitored by RHEED, was produced through an initial 2D (2-dimensional) nucleation mode which was followed by a period of 3D (3-dimensional) island growth mode. Then, the 2D growth recovered after a few minutes and the streak RHEED pattern remained clear till the end of growth. The crystal quality of InAs thin films is dependent strongly on the As BEP. When the As BEP is $3.6{\times}10^{-6}$ Torr, the InAs thin film has a high electron mobility of 10,952 $cm^2/Vs$ at room temperature.

• 반도체디스플레이기술학회지
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• 제10권3호
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• pp.29-33
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• 2011

Film growth rate and composition variation are numerically analyzed during the selective area growth of InGaN on the GaN triangular stripe microfacet in this study. Both the vapor phase diffusion and the surface diffusion are considered to determine the In composition on the InGaN surface. To obtain the In composition on the surface, flux of In atoms due to the surface diffusion is added to the concentration determined from the Laplace equation which is governing the gas phase diffusion. The solution model is validated by comparing the growth rates from the analyses to the experimental results of GaN and InN films. The In composition and resulting wave length are increased when the surface diffusion is considered. The In content is also increased according to the increasing mask width. The effect of mask width to the In content and wave length is increasing in the case of a small open region.

• Transactions on Electrical and Electronic Materials
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• 제1권3호
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• pp.18-22
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• 2000

In this work, we reported the sulfur compositional variation of ZnS$\_$x/Se$\_$1-x/ epitaxial layers with growth temperature and BEP ration of ZnX/Se/)P$\_$ZnS//P$\_$Se/) grown on GaAs substrates by molecular beam epitaxy. The sulfur composition of ZnSSe epitaxial layers was varied sensitively on the growth temperature and show different linear relationship with growth temperature and BEP ration of ZnS/Se(P$\_$ZnS//P$\_$Se/), which revealed -0.107 %$\^{C}$ at (P$\_$ZnS//P$\_$Se/)=0.30 and -0.052 %$\^{C}$ at (P$\_$ZnS//P$\_$Se/)=0.158 rspectively. A reference data for the accurate control of the sulfur composition and the growth of high quality ZnSSe/GaAs epitaxial layers was provided.

• 한국세라믹학회지
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• 제39권5호
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• pp.498-502
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• 2002

Liquid Phase Epitaxy(LPE)법을 사용하여 SGGG(111) 기판 위에 $PbO/B_2O_3$를 융제로 Yttrium Iron Garnet($Y_3Fe_5O_{12}$, YIG) 후막을 성장하였다. 기판 회전속도와 과냉도 등의 성장변수가 YIG 후막의 결정성, 화학조성 그리고 성장속도에 미치는 영향에 대하여 고찰하였다. 성장온도가 860~910${\circ}C$까지 증가함에 따라 막의 FWHM 값은 감소하였고, 성장오도 910${\circ}C$, 120rpm의 시편회전속도에서 $60{\mu}m/h$ 이상의 높은 성장률을 나타내었다.