• Proceedings of the Optical Society of Korea Conference
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• 2007.07a
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• pp.237-238
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• 2007

A new strain analysis model, so called the stress matched model, in an epitaxial multilayer system is proposed. The model makes it possible to know the strain, the stress, the elastic strain energy in each epitaxial layer. Analytical formulas of strain parameters in each epitaxial layer are derived under assumptions that the substrate thickness is finite and the in-plane lattice constant is the same for all epitaxial layers for dislocation free growth. As an example, the model is applied to a 405nm InGaN/InGaN multiple quantum well laser diode. Analysis result shows that AlxGa1-xN layer with Al mole fraction of 0.06 and the thickness of 6${\mu}m$ is one of good templates for a laser. In fact, this layer structure coincides with experimentally optimized one.

• Coupled systems mechanics
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• v.6 no.1
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• pp.29-40
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• 2017

This work employed density functional theory to investigate the structural and ferroelectric properties of the Ruddlesden-Popper (RP) phase of lead titanate, $Pb_2TiO_4$, as well as its phase transitions with epitaxial strain. A wealth of novel structural instabilities, which are absent in the host $PbTiO_3$ material, were identified in the RP phase through phonon soft-mode analysis. Our calculations showed that the ground state of $Pb_2TiO_4$ is antiferroelectric, distinct from the dominant ferroelectric phase in the corresponding host material. In addition, applied epitaxial strain was found to play a key role in the interactions among the instabilities. The induction of a sequence of antiferroelectric and antiferrodistortive (AFD) phase transitions by epitaxial strain was demonstrated, in which the ferroic instability and AFD distortion were cooperative rather than competitive, as is the case in the host $PbTiO_3$. The RP phase in conjunction with strain engineering thus represents a new approach to creating ferroic orders and modifying the interplay among structural instabilities in the same constituent materials, enabling us to tailor the functionality of perovskite oxides for novel device applications.

• Journal of Magnetics
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• v.13 no.2
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• pp.57-60
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• 2008

This study examined the effect of various types of epitaxial strain on the magnetic properties of $SrRuO_3$ thin films. Epitaxial $SrTiO_3$ (001), $SrTiO_3$ (110), and $SrTiO_3$ (111) substrates were used to apply different crystal symmetries to the grown films. The films were grown using pulsed laser deposition. The X-ray diffraction patterns of the films grown under optimum conditions showed very clear peaks for the $SrRuO_3$ film and $SrTiO_3$ substrates. The saturated magnetic moment at 5 K after 7 Tesla field cooling was $1.2-1.4\;{\mu}_B$/Ru. The magnetic easy axis for all three types of films was along the surface normal. The magnetic transition temperature for the $SrRuO_3$ film with lower symmetry was slightly larger than the $SrRuO_3$ film with higher symmetry.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.277-277
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• 2013

The epitaxial graphene on the 4H- or 6H-SiC(0001) surface has been intensively studied due to the possibility of wafer-scale growt. However the existence of interface layer (zero layer graphene) and its influence on the upper graphene layer have been considered as one of the main obstarcles for the industrial application. Among various methods tried to overcome the strong interaction with the substrate through the interface layer, it has been proved that the hydrogen intercalation successfully passivate the Si dangling bond of the substrate and can produce the quasi-free standing epitaxial graphene (QFEG) layers on the siC(0001) surface. In this study, we report the results of the angle-resolved photoemission spectroscopy (ARPES) and Raman spectroscopy for the QFEG layers produced by ex-situ and in-situ hydrogen intercalation.From the ARPES measurement, we confirmed that the Dirac points of QFEG layers exactly coincide with the Fermi level. The band structure of QFEG layer are sustainable upon thermal heating up to 1100 K and robust against the deposition of several metals andmolecular deposition. We also investigated the strain of the QFEG layers by using Raman spectroscopy measurement. From the change of the 2D peak position of graphene Raman spectrum, we found out that unlike the strong compressive strain in the normal epitaxial graphene on the SiC(0001) surface, the strain of the QFEG layer are significantly released and almost similar to that of the mechanically exfoliated graphene on the silicon oxide substrate. These results indicated that various ideas proposed for the ideal free-standing graphene can be tested based on the QFEG graphene layers grown on the SiC(0001) surface.

• The Korean Journal of Ceramics
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• v.6 no.4
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• pp.385-389
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• 2000

Residual stresses in epitaxial films were measured by X-ray diffraction method. Lattice strains of the (hkl) planes measured along particular Ψ-angles were converted to the in-plane stress according to the equation of stress-strain tensor conversion. Residual tensile stresses were observed in epitaxial PbTiO$_3$ films deposited on (100) SrTiO$_3$ substrate. Tensile stresses approximately 0.9 GPa were measured in Pb-rich films, while it increased to approximately 2.0 GPa with the decreasing of Pb content in the case of Pb-poor films, which ascribed to the formation of lead and oxygen vacancies (expressed as x in Pb$_1-x$TiO$_3-x$).

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.29-29
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• 1999

The synthesis of layered structures on the nanometer scale has become essential for continued improvements in the operation of various electronic and magnetic devices. Abrupt metal-metal interfaces are desired for applications ranging from metallization in semiconductor devices to fabrication of magnetoresistive tunnel junctions for read heads on magnetic disk drives. In particular, characterizing the interface structure between various transition metals (TM) and aluminum is desirable. We have used the techniques of MeV ion backscattering and channeling (HEIS), x-ray photoemission (ZPS), x-ray photoelectron diffraction(XPD), low-energy ion scattering (LEIS), and low-energy electron diffraction(LEED), together with computer simulations using embedded atom potentials, to study solid-solid interface structure for thin films of Ni, Fe, Co, Pd, Ti, and Ag on Al(001), Al(110) and Al(111) surfaces. Considerations of lattice matching, surface energies, or compound formation energies alone do not adequately predict our result, We find that those metals with metallic radii smaller than Al(e.g. Ni, Fe, Co, Pd) tend to form alloys at the TM-Al interface, while those atoms with larger atomic radii(e.g. Ti, Ag) form epitaxial overlayers. Thus we are led to consider models in which the strain energy associated with alloy formation becomes a kinetic barrier to alloying. Furthermore, we observe the formation of metastable fcc Ti up to a critical thickness of 5 monolayers on Al(001) and Al(110). For Ag films we observe arbitrarily thick epitaxial growth exceeding 30 monolayers with some Al alloying at the interface, possible driven by interface strain relief. Typical examples of these interface structures will be discussed.

• Journal of the Korean institute of surface engineering
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• v.31 no.6
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• pp.345-358
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• 1998

The evolution of surface roughness and morphology in epitaxial Si and $Si_{0.7}Ge{0.3}$ alloys grown by UHV opm-beam sputter deposition onto nominally-singular, [100]-, and [110]-mi-scut Si(001) was investigated by stomic force microscopy and trasmission electron microscopy. The evolution of surface roughness of epitaxial Si films grown at $300^{\circ}C$ is inconsistent with conventional scaling and hyperscaling laws for kineti roughening. Unstable growth leading to the formation of mounds separated by a well-defined length scale is observed on all substrates. Contraty to previous high-temperature growth results, the presence of steps during deposition at $300^{\circ}C$ increases the tendency toward unstable growth resulting in a much earlier development of mound structures and larger surface roughnesses on vicival substrates. Strain-induced surface roughening was found to dominate in $Si_{0.7}Ge{0.3}$ alloys grown on singular Si(001) substrates at $T_S\ge450^{\circ}C$ where the coherent islands are prererentially bounded along <100> directions and eshibt {105} facetting. Increasing the film thickness above critical values for strain relaxation leads to island coalescence and surface smoothening. At very low growth temperatures ($T_s\le 250^{\circ}C$), film surfaces roughen kinetically, due to limited adatom diffusiviry, but at far lower rates than in the higher-temperature strain-induced regime. There is an intermediate growth temperature range, however, over which alloy film surfaces remain extremely smooth even at thicknesses near critical values for strain relaxation.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.113.2-113.2
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• 2014

Heat is a familiar form of energy transported from a hot side to a colder side of an object, but not a notion associated with microscopic measurements of electronic properties. A temperature difference within a material causes charge carriers, electrons or holes, to diffuse along the temperature gradient inducing a thermoelectric voltage. Here we show that local thermoelectric measurements can yield high sensitivity imaging of structural disorder on the atomic and nanometre scales. Using this imaging technique, we discovered a defect-mediated dimensional evolution of strain-response patterns in epitaxial graphene with increasing thickness.

• Proceedings of the Korean Vacuum Society Conference
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• 2003.08a
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• pp.113-113
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• 2003

• Transactions on Electrical and Electronic Materials
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• v.10 no.2
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• pp.40-43
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• 2009

The authors fabricated a nanopatterned surface on a GaN thin film deposited on a sapphire substrate and used that as an epitaxial wafer on which to grow an InGaN/GaN multi-quantum well structure with metal-organic chemical vapor deposition. The deposited GaN epitaxial surface has a two-dimensional photonic crystal structure with a hexagonal lattice of 230 nm. The grown structure on the nano-surface shows a Raman shift of the transverse optical phonon mode to $569.5\;cm^{-1}$, which implies a compressive stress of 0.5 GPa. However, the regrown thin film without the nano-surface shows a free standing mode of $567.6\;cm^{-1}$, implying no stress. The nanohole surface better preserves the strain energy for pseudo-morphic crystal growth than does a flat plane.