• 제목/요약/키워드: Enhancement-mode

검색결과 326건 처리시간 0.024초

3상 승압형 정류기에서 과도상태 응답특성의 향상을 위한 슬라이딩 모드 제어기 (A Sliding-Mode Controller for Enhancement of Fast Dynamic Characteristic in Three-Phase Boost Rectifiers)

  • 김주혜;주성탁;최대근;이교범
    • 전력전자학회:학술대회논문집
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    • 전력전자학회 2012년도 추계학술대회 논문집
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    • pp.101-102
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    • 2012
  • 본 논문에서는 3상 승압형 정류기를 위한 슬라이딩모드 기반의 센서리스 직접전력제어방법을 제안한다. 공간벡터변조방식을 이용한 직접전력제어기법은 히스테리시스 제어기를 사용한 방법에 비해 스위칭 주파수가 일정하게 유지되어 시스템 안정성은 향상되지만, 응답속도가 떨어지는 단점이 있다. 제안하는 방법은 센서리스 기법을 이용하여 전압 센서를 제거하였고, 슬라이딩모드 제어기를 이용하여 시스템의 응답속도를 개선하였다. 3상 승압형 정류기의 시뮬레이션 결과를 통해 제안하는 제어기법의 타당성을 검증한다.

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Scalable Extension of HEVC for Flexible High-Quality Digital Video Content Services

  • Lee, Hahyun;Kang, Jung Won;Lee, Jinho;Choi, Jin Soo;Kim, Jinwoong;Sim, Donggyu
    • ETRI Journal
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    • 제35권6호
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    • pp.990-1000
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    • 2013
  • This paper describes the scalable extension of High Efficiency Video Coding (HEVC) to provide flexible high-quality digital video content services. The proposed scalable codec is designed on multi-loop decoding architecture to support inter-layer sample prediction and inter-layer motion parameter prediction. Inter-layer sample prediction is enabled by inserting the reconstructed picture of the reference layer (RL) into the decoded picture buffer of the enhancement layer (EL). To reduce the motion parameter redundancies between layers, the motion parameter of the RL is used as one of the candidates in merge mode and motion vector prediction in the EL. The proposed scalable extension can support scalabilities with minimum changes to the HEVC and provide average Bj${\o}$ntegaard delta bitrate gains of about 24% for spatial scalability and of about 21% for SNR scalability compared to simulcast coding with HEVC.

Multicomponent wide band gap oxide semiconductors for thin film transistors

  • Fortunato, E.;Barquinha, P.;Pereira, L.;Goncalves, G.;Martins, R.
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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    • pp.605-608
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    • 2006
  • The recent application of wide band gap oxide semiconductors to transparent thin film transistors (TTFTs) is making a fast and growing (r)evolution on the contemporary solid-state electronics. In this paper we present some of the recent results we have obtained using wide band gap oxide semiconductors, like indium zinc oxide, produced by rf sputtering at room temperature. The devices work in the enhancement mode and exhibit excellent saturation drain currents. On-off ratios above $10^6$ are achieved. The optical transmittance data in the visible range reveals average transmittance higher than 80 %, including the glass substrate. Channel mobilities are also quite respectable, with some devices presenting values around $25\;cm^2/Vs$, even without any annealing or other post deposition improvement processes. The high performances presented by these TTFTs associated to a high electron mobility, at least two orders of magnitude higher than that of conventional amorphous silicon TFTs and a low threshold voltage, opens new doors for applications in flexible, wearable, disposable portable electronics as well as battery-powered applications.

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Resolution Enhancement of Scanning Tomographic Acoustic Microscope System

  • Ko, Daesik
    • The Journal of the Acoustical Society of Korea
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    • 제15권1E호
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    • pp.70-76
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    • 1996
  • We proposed to use shear waves instead of longitudinal waves in a STAM (scanning tomographic acoustic microscope system) in which the specimens are solid. For any specimen with a shear modulus, mode conversion will take place at the water-solid interface. Some of the energy of the insonifying longitudinal waves in the water will convert to shear wave energy within the specimen. The shear wave energy is detectable and can be used for tomographic reconstruction. The resolution limitation of STAM depends on the available angular view and the acoustic wavelength. While wave transmission in most solid specimens is limited to about 20°for longitudinal waves, we show that it is about twice that high for shear waves. Since the wavelength of the shear wave is shorter than that of the longitudinal wave, we are able to achieve the high resolution. In order to compare the operation of a shear-wave STAM with that of the conventional longitudinal-wave STAM we have simulated tomographic reconstruction for each. Our simulation results with aluminum specimen and back-and-forth propagation algorithm showed resolution of a shear-wave STAM is better than that of a longitudinal-wave STAM.

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확장날개를 이용한 틸트로터 무인기 체공성능 향상 (Increasing Endurance Performance of Tiltrotor UAV Using Extended Wing)

  • 이명규;이치훈
    • 항공우주시스템공학회지
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    • 제10권1호
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    • pp.111-117
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    • 2016
  • A new configuration of tiltrotor UAV previously suggested by Korea Aerospace Research Institute (KARI) for the purpose of increasing the endurance performance in airplane mode flight has extended wings attached to the nacelle and rotated with the nacelle according to the flight modes. In this research, the effectiveness of the extended wing on the enhancement of the endurance performance of KARI tiltrotor UAV (TR60) was analytically investigated based on CFD analysis results. Flight tests and ground tests of measuring the fuel consumption were also conducted to directly compare the endurance performance for the two configurations of TR60 baseline and TR60 extended-wing model.

Ultraviolet and visible light detection characteristics of amorphous indium gallium zinc oxide thin film transistor for photodetector applications

  • Chang, Seong-Pil;Ju, Byeong-Kwon
    • International journal of advanced smart convergence
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    • 제1권1호
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    • pp.61-64
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    • 2012
  • The ultraviolet and visible light responsive properties of the amorphous indium gallium zinc oxide thin film transistor have been investigated. Amorphous indium gallium zinc oxide (a-IGZO) thin film transistor operate in the enhancement mode with saturation mobility of $6.99cm^2/Vs$, threshold voltage of 13.5 V, subthreshold slope of 1.58 V/dec and an on/off current ratio of $2.45{\times}10^8$. The transistor was subsequently characterized in respect of visible light and UV illuminations in order to investigate its potential for possible use as a detector. The performance of the transistor is indicates a high-photosensitivity in the off-state with a ratio of photocurrent to dark current of $5.74{\times}10^2$. The obtained results reveal that the amorphous indium gallium zinc oxide thin film transistor can be used to fabricate UV photodetector operating in the 366 nm.

압축응력 다중양자우물 구조 InGaAs/InGaAsP PBH-DFB-LD의 제작과 특성 평가 (Fabrication and characterization of InGaAs/InGaAsP strained multiple quantum well PBH-DFB-LDs)

  • 이정기;장동훈;조호성;박경현;김정수;김홍만;박형무
    • 전자공학회논문지A
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    • 제32A권8호
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    • pp.119-125
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    • 1995
  • Strained multiple quantum well(SMQW) PBH-DFB-LDs emitting at 1.55$\mu$m wavelength has been fabricated using OMVPE and LPE crystal growth tecnique. Using the SMQW active layer, a linewidty enhancement factor of 2.65 was obtained at lasing wavelength and consequnently, packaged 42 modules showed a very low average chirp of 0.44nm at 2.5Gbps NRZ direct modulation. The 77 devices showed average threshold current of 8.72mA and average slope efficiency of 0.181 mW/mA, and single longitudinal mode operation with SMSR larger than 30dB up to 5mW. Among the 77 devices, standard deviation of lasing wavelength of 3.57nm was obtained owing to a good crystal growth uniformity.

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주상변압기 밀봉재질 개선을 위한 수명시험 방법 (Enhancement of Rubber Gasket Material for Pole Transformer)

  • 송동수
    • 전기학회논문지
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    • 제59권10호
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    • pp.1770-1775
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    • 2010
  • An acceleration life test for rubber gasket of pole transformer was performed. The Arrhenius method was applied as an accelerated degradation test. The failure mode was considered as an elongation, and the failure mechanism is counted as a heat. It is found that both the current material(NBR: Nitrile Butadiene Rubber) and recommended alternative material(HNBR: Hydrogenated Nitrile Butadiene Rubber) have the same Weibull distribution as a life characteristic. For life expectation 95% reliability level of characteristic life is used at using temperature. The test results for NBR and HNBR are 7.7 years and 28.0 years on $50^{\circ}C$ of using temperature, respectively.

비파괴 검사용 초음파 탐촉자에서의 정합층 최적 설계법 (Design Method for the Optimized Acoustic Matching Layers of UT Probes)

  • 박치승;김선진
    • 한국재료학회지
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    • 제13권10호
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    • pp.658-662
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    • 2003
  • In this study, we have tried to find the optimized design variables of the matching layer which is important part of thickness mode ultrasonic transducer and finally reach the conclusion that the electrical property of piezo-element must be under consideration when the optimized acoustic impedance is estimated. Proper expression of the effective impedance of front load at free resonant frequency(: $Z_{f}$ $^{(0)}$ /) has been induced by introducing the principle of binomial multilayer transformer and gradient based numerical method is utilized to find the most acceptable value of $Z_{ f}$/$^{(0)}$ . Optimized point of acoustic impedance can be calculated directly from $Z_{f}$ $^{(0)}$ using some simple formula which we propose. We also verify our result by both numerical and experimental method and get a good enhancement especially it concern to the bandwidth of ultrasonic transducer.

고속통신을 위한 최적 네트워크프로토콜의 성능 향상 (Performance Enhancement of An Optimal Network Protocol for High-Speed Communication)

  • 강문식
    • 한국통신학회논문지
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    • 제19권9호
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    • pp.1641-1647
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    • 1994
  • 본 논문에서는 고속통신망에 적합한 통신 프로토콜을 설계하고 그 성능을 분석하였다. 제안된 프로토콜은 ATM 전송방식을 기본으로 하고, 분산큐 방식 및 동적대역폭 할당구조를 사용하여 고속의 전송속도 및 다양한 서비스 지원이 가능하다. 다양한 통신망 환경에 따른 성능분석과 컴퓨터 시뮬레이션 결과를 고찰하여 제안된 구조의 우수성을 입증하였다.

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