• Journal of the Korean Vacuum Society
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• v.12 no.1
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• pp.70-77
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• 2003

It is well Down that the growth of carbon nanotubes (CNTs) by chemical vapor deposition (CVD) using a transition metal catalyst is greatly enhanced in a nitrogen environment. We show here that the enhanced growth is closely related to the activated nitrogen and it's incorporation into the CNT wall and cap during growth. This behavior is consistent with theoretical calculations of CNx thin films, showing that nitrogen incorporation to the graphitic basal plane reduces the elastic strain energy for curving the graphitic layer. Enhanced CNT growth by nitrogen incorporation is thus due to a decrease in the activation energies required for nucleation and growth of the tubular graphitic layer.

• Bulletin of the Korean Chemical Society
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• v.31 no.4
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• pp.999-1003
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• 2010

Raman spectra of a single layer graphene sheet placed in different gold substrates were obtained and are discussed in the context of surface enhanced Raman scattering (SERS). The gold substrates were composed of a combination of a thermally deposited gold film and a close-packed gold nanosphere layer. The SERS effects were negligible when the excitation wavelength was 514 nm, while the Raman signals were enhanced 3-to 50-fold when the excitation wavelength was 633 nm. The large SERS enhancement accompanied a spectral distortion with appearance of several unidentifiable peaks, as well as enhancement of a broadened D peak. These phenomena are interpreted as the local field enhancement in the nanostructure of the gold substrates. The difference in the enhancement factors among the various gold substrates is explained with a model in which the spatial distribution and polarization of the local field and the orientation of the inserted graphene sheet are considered important.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.359-359
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• 2014

In this study, surface plasmon resonance structures for the selective and the enhanced transmission of infrared light were designed. In order to relieve the large discontinuity of refractive index between air and metal hole array, $Si_3N_4$ was used as the impedance matching layer. Experimental parameter were calculated and determined in advance by the rigorous coupled wave analysis (RCWA) simulation, and then the experiment was carried out. A 2-dimensional metal hole array structures were patterned on the size of $1{\times}1cm^2$ GaAs substrate using photolithography process, and 5 nm thick Ti, 50 nm thick Au were deposited by E-beam evaporator, respectively. Subsequently, $Si_3N_4$ films with various thicknesses (150, 350, 550, and 750 nm) were deposited by plasma enhanced chemical vapor deposition (PECVD). For the comparison, transmittance of specimens with and without $Si_3N_4$ was measured using Fourier transform infrared spectroscopy (FTIR) in the range of $2.5-15{\mu}m$. Furthermore, the surface and the cross-sectional images were collected from the specimens by scanning electron microscopy (SEM). From the results, it was demonstrated that the transmittance was enhanced up to 80% by the deposition of 750 nm $Si_3N_4$ at $6.23{\mu}m$. It has advantage of enhanced transmission despite the simple fabrication process.

• Journal of Information Display
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• v.6 no.2
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• pp.1-6
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• 2005

We demonstrated stability-enhanced liquid crystal (LC) displays using pixel-isolated LC mode in which LC molecules are isolated in pixel by horizontal polymer layer and vertical polymer wall. The device shows good electro-optic properties against external point or bending pressure due to the polymer structures. The polymer wall acts as supporting structure from mechanical pressure and prevents the cell gap from bending. Moreover, the polymer layer acts as an adhesive to ensure a tight attachment of the two substrates. We present herein various methods for producing polymer structures by using an anisotropic phase separation from LC and polymer composites or patterned micro-structures for stable flexible liquid crystal displays.

• IEIE Transactions on Smart Processing and Computing
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• v.3 no.5
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• pp.298-305
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• 2014

In this study, a novel Randomly Shifted Certification Authority Authentication protocol was used in ad hoc networks to provide authentication by considering the MAC layer characteristics. The nodes achieve authentication through the use of public key certificates issued by a CA, which assures the certificate's ownership. As a part of providing key management, the active CA node transfers the image of the stored public keys to other idle CA nodes. Finally the current active CA randomly selects the ID of the available idle CA and shifts the CA ownership by transferring it. Revoking is done if any counterfeit or duplicate non CA node ID is found. Authentication and integrity is provided by preventing MAC control packets, and Enhanced Hash Message Authentication Code (EHMAC) can be used. Here EHMAC with various outputs is introduced in all control packets. When a node transmits a packet to a node with EHMAC, verification is conducted and the node replies with the transmitter address and EHMAC in the acknowledgement.

• Journal of information and communication convergence engineering
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• v.9 no.6
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• pp.637-640
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• 2011

The hybrid neural networks have characteristics such as fast learning times, generality, and simplicity, and are mainly used to classify learning data and to model non-linear systems. The middle layer of a hybrid neural network clusters the learning vectors by grouping homogenous vectors in the same cluster. In the clustering procedure, the homogeneity between learning vectors is represented as the distance between the vectors. Therefore, if the distances between a learning vector and all vectors in a cluster are smaller than a given constant radius, the learning vector is added to the cluster. However, the usage of a constant radius in clustering is the primary source of errors and therefore decreases the recognition success rate. To improve the recognition success rate, we proposed the enhanced hybrid network that organizes the middle layer effectively by using the enhanced ART1 network adjusting the vigilance parameter dynamically according to the similarity between patterns. The results of experiments on a large number of calling card images showed that the proposed algorithm greatly improves the character extraction and recognition compared with conventional recognition algorithms.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.34-34
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• 2009

The electrical characteristics of tunnel barrier engineered charge trap flash (TBE-CTF) memory with $SiO_2/Si_3N_4/SiO_2/Si$ engineered tunnel barrier, $HfO_2$ charge trap layer and $Al_2O_3$ blocking oxide layer (MAHONOS) were investigated. The energy bad diagram was designed by using the quantum-mechanical tunnel model (QM) and then the CTF memory devices were fabricated. As a result, the best thickness combination of MAHONOS is confirmed. Moreover, not enhanced P/E speed (Program: about $10^6$ times) (Erase: about $10^4$ times) but also enhanced retention and endurance characteristics are represented.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.229-229
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• 2012

Adhesion of Copper film on the aluminum oxide layer formed by anodizing an aluminum plate was enhanced by applying ion beam mixing method. Forming an conductive metal layer on the insulating oxide surface without using adhesive epoxy bonds provide metal-PCB(Printed Circuit Board) better thermal conductivities, which are crucial for high power electric device working condition. IBM (Ion beam mixing) process consists of 3 steps; a preliminary deposition of an film, ion beam bombardment, and additional deposition of film with a proper thickness for the application. For the deposition of the films, e-beam evaporation method was used and 70 KeV N-ions were applied for the ion beam bombardment in this work. Adhesions of the interfaces measured by the adhesive tape test and the pull-off test showed an enhancement with the aid of IBM and the adhesion of the ion-beam-mixed films were commercially acceptable. The mixing feature of the atoms near the interface was studied by scanning electron microscopy, Auger electron spectroscopy, and X-ray photoelectron spectroscopy.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.601-604
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• 2006

We have developed ZnO TFT array using conventional photolithography and wet etching processes. Transparent 20 nm of ultra thin ZnO film deposited by means of plasma enhanced atomic layer deposition at $100^{\circ}C$ was used for the active channel. The ZnO TFT has a mobility of $0.59cm^2/V.s$, a threshold voltage of 7.2V, sub-threshold swing of 0.64V/dec., and an on/off ratio of $10^8$.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.1122-1125
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• 2006

The TFT performances were enhanced and stabilized by plasma oxidation of the polycrystalline Si surface prior to the plasma enhanced atomic layer deposition of $Al_2O_3$ gate dielectric film. We attribute the improvement to the formation of a high quality oxide interface layer between the gate dielectric film and the poly-Si film. The interface oxide has a predominant effect on the TFT's characteristics, and is regulated by the gap distance between the electrode and the polycrystalline Si surface.