• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.41-41
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• 2011

Flash memory에서 tunnel oxide film은 electron tunnelling 현상을 이용하여 gate에 전하를 전달하는 통로로 사용되고 있다. 특히, tunnel oxide film 내부의 charge trap 현상과 불순물이 소자 특성에 직접적인 영향을 주고 있어, 후속 N2O/NO 열처리 공정에서 SiO2/Si 계면에 nitrogen을 주입하여 tunnel oxide film 특성을 개선하고 있다. 따라서 N2O/NO 열처리 공정 최적화를 위해서는 tunnel oxide film 내 N 농도와 분포에 대한 정확한 평가가 필수적이다[1]. 본 실험에서는 low energy magnetic SIMS를 이용하여 N2O로 열처리된 tunnel oxide film 내의 N농도를 보다 정확하게 평가하고자 하였다. 사용된 시료는 Si substrate에 oxidation 이후 N2O 열처리를 진행하여 tunnel oxide를 형성시켰으며, 분석 impact energy는 surface effect최소화와 최상의 depth resolution 확보를 위해 250eV를 사용하였으며, matrix effect와 mass interference를 방지하기 위해 MCs+ cluster mode[2]로 CsN signal를 검출하였다. 실험 결과, 특정 primary beam 입사각도에서 nitrogen depth resolution 저하 현상이 발생하였고, SIMS crater 표면이 매우 거칠게 나타났다. 이에, Depth resolution 저하 현상을 개선하기 위해 극한의 glancing 입사각 조건으로 secondary extraction voltage 변화를 통해 depth resolution이 개선되는 최적의 impact energy와 primary beam 입사각 조건을 확보하였다. 그 결과 nitrogen의 depth resolution은 1.6nm의 depth resolution을 확보하였으며, 보다 정확한 N 농도와 분포를 평가할 수 있게 되었다.

• Journal of Advanced Technology Convergence
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• v.2 no.4
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• pp.43-48
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• 2023

Globally, there is a collaborative effort to achieve global carbon neutrality in response to climate change. In the case of South Korea, greenhouse gas emissions are rapidly increasing, presenting an urgent situation that requires resolution. In this context, this study developed a thermal energy collection device named a 'steam trap' and created an AI model capable of predicting future electricity usage by collecting energy usage data through steam traps. The average accuracy of electricity usage prediction with this AI model was 96.7%, demonstrating high precision. Consequently, the AI model enables the prediction and management of days with high electricity consumption and identifies which facilities contribute to elevated power usage. Future research aims to optimize energy consumption efficiency through efficient equipment operation using anomaly detection in steam traps and standardizing energy management systems, with the ultimate goal of reducing greenhouse gas emissions.

• Journal of Sensor Science and Technology
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• v.7 no.4
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• pp.234-242
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• 1998

Changes in transmission and thermoluminescent characteristics were used in order to find out the optimum growth condition of CsI single crystal scintillators which were made relatively defect-free using Czochralski method. Impurity distribution in the crystals and the intensity and number of thermoluminescent glow peaks decreased as the process of crystallization was repeated. The direction of crystal growth turned out to be (110), the crystal structure of grown CsI was bee, and its lattice constant was found to be $4.568{\AA}$. The activation energy (trap depths) of CsI:3rd was 0.45 eV and its frequency factor was $5.18{\times}10^5\;sec^{-1}$.

• Proceedings of the IEEK Conference
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• 2000.06b
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• pp.16-19
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• 2000

DC and low frequency noise characteristics of InGaP/InGaAs pseudomorphic HEMTs (p-HEMTs) grown by compound source MBE are investigated for temperature range of 150K to 370K. Equivalent input noise spectra( $S_{iv}$ ) were measured as a function of frequency and temperature. $S_{iv}$ was measured to be 3.4 $\times$ 10$^{-12}$ $V^2$/ Hz at 1kHz for 1.3 X 50${\mu}{\textrm}{m}$$^2$InGaP/InGaAs p-HEMT at room temperature. Measurements of the low-frequency noise spectra of the p-HEMT as a function of temperature show that the trap with an activation energy level around 0.589 eV is a dominant trap that accounts for the low-frequency noise behavior of the device. The normalized extrinsic gm frequency dispersion of the p-HEMT. was as low as 2.5％ at room temperature, indicating that the device has well-behaved low-frequency noise characteristics. Sub-micron (0.25 $\times$ 50${\mu}{\textrm}{m}$$^2$) gate p-HEMT showed $f_{T}$ and $f_{max}$ of 40GHz and 108GHz, respectively.y.y.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.162-162
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• 2011

Nanometer-sized noble metals can trap and guide sunlight for enhanced absorption of light based on surface plasmon that is beneficial for generation of hot electron flows. A pulse of high kinetic energy electrons (1-3 eV), or hot electrons, in metals can be generated after surface exposure to external energy, such as in the absorption of light or in exothermic chemical processes. These energetic electrons are not at thermal equilibrium with the metal atoms. It is highly probable that the correlation between hot electron generation and surface plasmon can offer a new guide for energy conversion systems [1-3]. We show that hot electron flow is generated on the modified gold thin film (<10 nm) of metal-semiconductor (TiO2) Schottky diodes by photon absorption, which is amplified by localized surface plasmon resonance. The short-circuit photocurrent obtained with low energy photons (lower than bandgap of TiO2, ~3.1-3.2 eV) is consistent with Fowler's law, confirming the presence of hot electron flows. The morphology of the metal thin film was modified to a connected gold island structure after heating to 120, 160, 200, and 240$^{\circ}C$. These connected island structures exhibit both a significant increase in hot electron flow and a localized surface plasmon with the peak energy at 550-570 nm, which was separately characterized with UV-Vis [4]. The result indicates a strong correlation between the hot electron flow and localized surface plasmon resonance with possible application in hot electron based solar cells and photodetectors.

• Progress in Medical Physics
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• v.5 no.2
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• pp.3-12
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• 1994

$\^$137/Cs gamma ray induced thermoluminescenc(TL) from Na$\^$+/ ion implanted Al$_2$O$_3$ and unimplanted Al$_2$O$_3$ and the TL from Na$\^$+/ ion implanted Al$_2$O$_3$ are measured over the temperature range of 340K～620K. The TL curve of Na$\^$+/ ion implanted Al$_2$O$_3$ induced by $\^$137/Cs gamma ray is split into iolated TL peak located at 415K, 452K, 508K, and 568K. Because that the concentration of trapped char he carries of $\^$137/Cs gamma ray induced Al$_2$O$_3$ implanted with Na$\^$+/ ion is larger than that of Na$\^$+/ ion only implanted Al$_2$O$_3$, and the trap concentration of Na$\^$+/ ion implanted Al$_2$O$_3$ is much than that of $\^$137/Cs gamma ray only irradiated Al$_2$O$_3$, the TL intensity of Na$\^$+/ ion implanted Al$_2$O$_3$ induced by $\^$137/Cs gamma ray is about 20 times and 5 times higher than that of Al$_2$O$_3$ only implanted with Na$\^$+/ ion and Al$_2$O$_3$ only irradiated with $\^$137/Cs gamma ray, respectively. In proportion as ion implantation does and energy are incresed, the number of generated defects and the rate of defect creation are incresed, respectively. Therefore the TL intensity of ion implanted Al$_2$O$_3$ is depend on ion dose and energy. Acccrding to increse of incident ion mass, the TL intensity of ion implanted Al$_2$O$_3$ is abruptly decresce. This result showes that the TL intensity of ion implanted Al$_2$O$_3$ is closely related to ion depth range as wll as rate of defect creatin. The TL intensity of ion implanted Al$_2$O$_3$ is found to be related with defects generated by ion implantation. Table Caption

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.196.2-196.2
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• 2015

There are various issues fabricating the successful and efficient solar cell structures. One of the most important issues is band alignment technique. The solar cells make the carrier in their active region over the p-n junction. Then, electrons and holes diffuse by minority carrier diffusion length. After they reach the edge of solar cells, there exist large energy barrier unless the good electrode are chosen. Many various conductor with different work functions can be selected to solve this energy barrier problem to efficiently extract carriers. Tungsten oxide has large band gap known as approximately 3.4 eV, and usually this material shows n-type property with reported work function of 6.65 eV. They are extremely high work function and trap level by oxygen vacancy cause them to become the hole extraction layer for optical devices like solar cells. In this study, we deposited tungsten oxide thin films by sputtering technique with various sputtering conditions. Their electrical contact properties were characterized with transmission line model pattern. The structure of tungsten oxide thin films were measured by x-ray diffraction. With x-ray photoelectron spectroscopy, the content of oxygen was investigated, and their defect states were examined by spectroscopic ellipsometry, UV-Vis spectrophotometer, and photoluminescence measurements.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.39 no.4
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• pp.1-9
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• 2002

The distribution characteristics of data retention time for DRAM was studied in connection with the probability distribution of the cell parameters. Using the cell parameters and the transient characteristics of cell node voltage, data retention time was investigated. The activation energy for dielectric layer growth on cell capacitance, the recombination trap energy for leakage current in the junction depletion region, and the sensitivity characteristics of sense amplifier were used as the random variables to perform the Monte Carlo simulation, and the probability distributions of cell parameters and distribution characteristics of cumulative failure bit on data retention time in DRAM cells were calculated. we found that the sensitivity characteristics of sense amplifier strongly affected on the tail bit distribution of data retention time.

• Journal of Power System Engineering
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• v.18 no.1
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• pp.38-44
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• 2014

The objectives of this study are to measure the ball recovery rate of cleaning apparatus for plate heat exchanger. Ceramic ball is used for plate heat exchanger cleaning. The main components of cleaning apparatus are comprised of ball collector, ball trap, ejector, pump and plate heat exchanger. The ball recovery rate are obtained with change in recovery time and velocity of water. The results show that the ball recovery rate is slightly increased with increase in the recovery time and the velocity of water over 0.4 m/s in the straight flow. In the case of reverse flow, the ball recovery rate more increased than straight flow. The maximum ball recovery rate of the straight flow and reverse flow reach 83.97% and 86.61%, respectively, when the velocity and cleaning time are 0.5 m/s and 15min.

• Journal of the Korean Ceramic Society
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• v.32 no.11
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• pp.1262-1268
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• 1995

Photoelectrochemical properties of p-GaAs electrode have been investigated. I-V characteristic shows that the cathodic photocurrent is observed at -0.7 V vs. SCE. The photoresponse at near 870~880nm wavelength indicates that the photogenerated carriers contibuted to the observed current. The maximum converson efficiency of 35% is obtained for a Xe lamp light source at 400nm. In C-V relation, capacitance peaks appeared at the frequencies of 100Hz and 300Hz due to the activation of the interfacial states which exist at the energy level corresponding to the one-third of the GaAs band gap. The difference of about 1.1V between flatband potential (Vfb) from the Mott-Schottky method and onset voltage from I-V curve is observed due to the trap of carriers at the interfacial states in the boundary between GaAs and electrolyte. In case of WO3 deposited p-GaAs electrode, higher positive onset current and photocurent density are obtained. This can be explained by the fact that carriers are generated by light penetrated into the WO3 thin flm as well as p-GaAs substrate and then move into the electrolyte effectively.