• Title/Summary/Keyword: Energy carrier

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Optical transition dynamics in ZnO/ZnMgO multiple quantum well structures with different well widths grown on ZnO substrates

  • Li, Song-Mei;Kwon, Bong-Joon;Kwack, Ho-Sang;Jin, Li-Hua;Cho, Yong-Hoon;Park, Young-Sin;Han, Myung-Soo;Park, Young-Sik
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.02a
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    • pp.121-121
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    • 2010
  • ZnO is a promising material for the application of high efficiency light emitting diodes with short wavelength region for its large bandgap energy of 3.37 eV which is similar to GaN (3.39 eV) at room temperature. The large exciton binding energy of 60 meV in ZnO provide provides higher efficiency of emission for optoelectronic device applications. Several ZnO/ZnMgO multiple quantum well (MQW) structures have been grown on various substrates such as sapphire, GaN, Si, and so on. However, the achievement of high quality ZnO/ZnMgO MQW structures has been somehow limited by the use of lattice-mismatched substrates. Therefore, we propose the optical properties of ZnO/ZnMgO multiple quantum well (MQW) structures with different well widths grown on lattice-matched ZnO substrates by molecular beam epitaxy. Photoluminescence (PL) spectra show MQW emissions at 3.387 and 3.369 eV for the ZnO/ZnMgO MQW samples with well widths of 2 and 5 nm, respectively, due to the quantum confinement effect. Time-resolved PL results show an efficient photo-generated carrier transfer from the barrier to the MQWs, which leads to an increased intensity ratio of the well to barrier emissions for the ZnO/ZnMgO MQW sample with the wider width. From the power-dependent PL spectra, we observed no PL peak shift of MQW emission in both samples, indicating a negligible built-in electric field effect in the ZnO/$Zn_{0.9}Mg_{0.1}O$ MQWs grown on lattice-matched ZnO substrates.

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3D Explosion Analyses of Hydrogen Refueling Station Structure Using Portable LiDAR Scanner and AUTODYN (휴대형 라이다 스캐너와 AUTODYN를 이용한 수소 충전소 구조물의 3차원 폭발해석)

  • Baluch, Khaqan;Shin, Chanhwi;Cho, Yongdon;Cho, Sangho
    • Explosives and Blasting
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    • v.40 no.3
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    • pp.19-32
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    • 2022
  • Hydrogen is a fuel having the highest energy compared with other common fuels. This means hydrogen is a clean energy source for the future. However, using hydrogen as a fuel has implication regarding carrier and storage issues, as hydrogen is highly inflammable and unstable gas susceptible to explosion. Explosions resulting from hydrogen-air mixtures have already been encountered and well documented in research experiments. However, there are still large gaps in this research field as the use of numerical tools and field experiments are required to fully understand the safety measures necessary to prevent hydrogen explosions. The purpose of this present study is to develop and simulate 3D numerical modelling of an existing hydrogen gas station in Jeonju by using handheld LiDAR and Ansys AUTODYN, as well as the processing of point cloud scans and use of cloud dataset to develop FEM 3D meshed model for the numerical simulation to predict peak-over pressures. The results show that the Lidar scanning technique combined with the ANSYS AUTODYN can help to determine the safety distance and as well as construct, simulate and predict the peak over-pressures for hydrogen refueling station explosions.

An Investigation of Electrical Properties in Cation-anion Codoped ZnO by Atomic Layer Deposition (원자층 증착법 기반 양이온-음이온 이중 도핑 효과에 따른 ZnO 박막의 전기적 특성 비교 연구)

  • Dong-eun Kim;Geonwoo Kim;Kyung-Mun Kang;Akendra Singh Chabungbam;Hyung-Ho Park
    • Journal of the Microelectronics and Packaging Society
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    • v.30 no.3
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    • pp.94-101
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    • 2023
  • Zinc oxide(ZnO) is a semiconductor material with a bandgap of 3.37 eV and an exciton binding energy of 60 meV for various applications. Recently ZnO has been proven to enhance its electrical properties for utilization as an alternative for transparent conducting oxide (TCO) materials. In this study, cation(Al, Ga)-anion(F) single and double doped ZnO thin films were grown by atomic layer deposition (ALD) to enhance the electrical properties. The structural and optical properties of doped ZnO thin films were analyzed, and doping effects were confirmed to electrical characteristics. In single doped ZnO, it was observed that the carrier concentration was increased after doping, acting as a donor to ZnO. Among the single doping elements, F doped ZnO(FZO) showed the highest mobility and conductivity due to the passivation effect of oxygen vacancies. In the case of double doping, higher electrical characteristics were observed compared to single doping. Among the samples, Al-F doped ZnO(AFZO) exhibited the lowest resistance value. This results can be attributed to an increase in delocalized electron states and a decrease in lattice distortion resulting from the differences in ionic radius. The partial density of states(PDOS) was also analyzed and observed to be consistent with the experimental results.

Electrical Properties of Two-dimensional Electron Gas at the Interface of LaAlO3/SrTiO3 by a Solution-based Process (용액 공정을 통해 제조된 LaAlO3/SrTiO3 계면에서의 이차원 전자 가스의 전기적 특성)

  • Kyunghee Ryu;Sanghyeok Ryou;Hyeonji Cho;Hyunsoo Ahn;Jong Hoon Jung;Hyungwoo Lee;Jung-Woo Lee
    • Journal of the Microelectronics and Packaging Society
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    • v.31 no.1
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    • pp.43-48
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    • 2024
  • The discovery of a two-dimensional electron gas (2DEG) at the interface of LaAlO3 (LAO) and SrTiO3 (STO) substrates has sparked significant interest, providing a foundation for cutting-edge research in electronic devices based on complex oxide heterostructures. However, conventional methods for producing LAO thin films, typically employing techniques like pulsed laser deposition (PLD) within physical vapor deposition (PVD), are associated with high costs and challenges in precisely controlling the La and Al composition within LAO. In this study, we adopted a cost-effective alternative approach-solution-based processing-to fabricate LAO thin films and investigated their electrical properties. By adjusting the concentration of the precursor solution, we varied the thickness of LAO films from 2 to 65 nm and determined the sheet resistance and carrier density for each thickness. After vacuum annealing, the sheet resistance of the conductive channel ranged from 0.015 to 0.020 Ω·s-1, indicating that electron conduction occurs not only at the LAO/STO interface but also into the STO bulk region, consistent with previous studies. These findings demonstrate the successful formation and control of 2DEG through solution-based processing, offering the potential to reduce process costs and broaden the scope of applications in electronic device manufacturing.

The study of growth and characterization of CuGaSe$_2$ single crystal thin films by hot wall epitaxy (HWE(Hot wall epitaxy)에 의한 CuGaSe$_2$단결정 박막 성장과 특성에 관한 연구)

  • 홍광준;백형원
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.10 no.3
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    • pp.189-198
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    • 2000
  • The stochiometric mixture of evaporating materials for the $CuGaSe_2$single crystal thin films were prepared from horizontal furnace. Using extrapolation method of X-ray diffraction patterns for the polycrystal $CuGaSe_2$, it was found tetragonal structure whose lattice constant $a_0}$ and $c_0$ were 5.615 $\AA$ and 11.025 $\AA$, respectively. To obtains the single crystal thin films, $CuGaSe_2$mixed crystal was deposited on throughly etched GaAs(100) by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were $610^{\circ}C$ and $450^{\circ}C$ respectively, and the growth rate of the single crystal thin films was about 0.5$\mu\textrm{m}$/h. The crystalline structure of single crystal thin films was investigated by the double crystal X-ray diffraction (DCXD). Hall effect on this sample was measured by the method of van der Pauw and studied on carrier density and mobility depending on temperature. From Hall data, the mobility was likely to be decreased by pizoelectric scattering in the temperature range 30 K to 150 K and by polar optical scattering in the temperature range 150 K to 293 K. The optical energy gaps were found to be 1.68 eV for CuGaSe$_2$sing1e crystal thin films at room temperature. The temperature dependence of the photocurrent peak energy is well explained by the Varshni equation then the constants in the Varshni equation are given by $\alpha$ = $9.615{\times}10^{-4}$eV/K, and $\beta$ = 335 K. From the photocurrent spectra by illumination of polarized light of the $CuGaSe_2$single crystal thin films. We have found that values of spin orbit coupling $\Delta$So and crystal field splitting $\Delta$Cr was 0.0900 eV and 0.2498 eV, respectively. From the PL spectra at 20 K, the peaks corresponding to free bound excitons and D-A pair and a broad emission band due to SA is identified. The binding energy of the free excitons are determined to be 0.0626 eV and the dissipation energy of the acceptor-bound exciton and donor-bound exciton to be 0.0352 eV, 0.0932 eV, respectively.

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Design and Economic Analysis of Low Pressure Liquid Air Production Process using LNG cold energy (LNG 냉열을 활용한 저압 액화 공기 생산 공정 설계 및 경제성 평가)

  • Mun, Haneul;Jung, Geonho;Lee, Inkyu
    • Korean Chemical Engineering Research
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    • v.59 no.3
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    • pp.345-358
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    • 2021
  • This study focuses on the development of the liquid air production process that uses LNG (liquefied natural gas) cold energy which usually wasted during the regasification stage. The liquid air can be transported to the LNG exporter, and it can be utilized as the cold source to replace certain amount of refrigerant for the natural gas liquefaction. Therefore, the condition of the liquid air has to satisfy the available pressure of LNG storage tank. To satisfy pressure constraint of the membrane type LNG tank, proposed process is designed to produce liquid air at 1.3bar. In proposed process, the air is precooled by heat exchange with LNG and subcooled by nitrogen refrigeration cycle. When the amount of transported liquid air is as large as the capacity of the LNG carrier, it could be economical in terms of the transportation cost. In addition, larger liquid air can give more cold energy that can be used in natural gas liquefaction plant. To analyze the effect of the liquid air production amount, under the same LNG supply condition, the proposed process is simulated under 3 different air flow rate: 0.50 kg/s, 0.75 kg/s, 1.00 kg/s, correspond to Case1, Case2, and Case3, respectively. Each case was analyzed thermodynamically and economically. It shows a tendency that the more liquid air production, the more energy demanded per same mass of product as Case3 is 0.18kWh higher than Base case. In consequence the production cost per 1 kg liquid air in Case3 was $0.0172 higher. However, as liquid air production increases, the transportation cost per 1 kg liquid air has reduced by $0.0395. In terms of overall cost, Case 3 confirmed that liquid air can be produced and transported with $0.0223 less per kilogram than Base case.

The Uptake of $Cs^{137}$ Paddy Rice from Soil and its Distribution in the Plant (답토양(畓土壤)에서 수도(水稻)의 Cesium-137 흡수(吸收)와 수도체내(水稻體內) 분포(分布))

  • Kim, Jae-Sung;Lim, Soo-Kil
    • Korean Journal of Environmental Agriculture
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    • v.4 no.1
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    • pp.18-24
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    • 1985
  • A pot experiment was conducted to study the influence of potassium and cesium carrier on the uptake of radionuclide $Cs^{137}$ which is an element released usually from nuclear facilities, by paddy rice upon prolonged cropping of contaminated soils. The results are summarized as follows: 1) Visual toxic symptoms on the growth of rice plant due to treatment of radioactive cesium were not observed up to $20 {\mu}Ci/10Kg$ soil in a pot. 2) The yield and potassium content in rice plant were increased with potassium application, while the reverse was true for the calcium and magnesium. The addition of potassium to the soil markedly reduced $Cs^{137}$ uptake by rice plant but the addition of Cs carrier increased $Cs^{137}$ uptake. 3) Potassium and $Cs^{137}$ showed uniform distribution in all parts of plant and the contents of these two elements were high in the stems and leaves, and low in the heads. The ratio of $Cs^{137}$ to K was, however, not uniform in all parts of a plant. It was shown that this ratio was higher in the seed part, that is, chaff and hulled grain than in the leaves and stems. 4) $Cs^{137}$ absorption rate in rice plant was remarkably reduced with increase of potassium application and it was ranged from $0.02{\sim}0.47%$ in potassium non-treated plot to 0.01∼0.04% in plot treated with a concentration of 16Kg/10a. 5) The amount of $Cs^{137}$ and potassium uptake of rice plant depended on soil type. Uptake of $Cs^{137}$ by rice plant was higher in the soil with low pH and potassium content. The $Cs^{137}$ uptake by rice plant decreased as the potassium content and pH of soil was increased, but $Cs^{137}$ uptake increased when CEC and clay content in soil was high.

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Growth and Characterization of AgGa$Se_2$ Single Crystal Thin Films by Hot Wall Epitaxy (Hot Wall Epitaxy (HWE)법에 의한 AgGa$Se_2$ 단결정 박막 성장과 특성)

  • Hong, Gwang-Jun;Lee, Gwan-Gyo;Park, Jin-Seong
    • Korean Journal of Materials Research
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    • v.11 no.5
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    • pp.419-426
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    • 2001
  • The stochiometric $AgGaSe_2$ polycrystalline mixture of evaporating materials for the $AgGaSe_2$ single crystal thin film was prepared from horizontal furnace. To obtain the single crystal thin films, $AgGaSe_2$ mixed crystal and semi-insulating GaAs(100) wafer were used as source material and substrate for the Hot Wall Epitaxy (HWE) system, respectively. The source and substrate temperature were fixed at$ 630^{\circ}C$ and $420^{\circ}C$, respectively. The thickness of grown single crystal thin films is 2.1$\mu\textrm{m}$. The single crystal thin films were investigated by photoluminescence and double crystal X-ray diffraction(DCXD) measurement. The carrier density and mobility of AgGaSe$_2$ single crystal thin films measured from Hall effect by van der Pauw method are $4.89\Times10^{17}$ cm$^{-3}$ , 129cm2/V.s at 293K, respectively. From the Photocurrent spectrum by illumination of perpendicular light on the c-axis of the AgGaSe$_2$ single crystal thin film, we have found that the values of spin orbit splitting $$\Delta$S_{o}$ and the crystal field splitting $\Delta$C$_{r}$, were 0.1762eV and 0.2474eV at 10K, respectively. From the photoluminescence measurement of AgGaSe$_2$ single crystal thin film, we observed free excision (EX) observable only in high quality crystal and neutral bound exciton ($D^{o}$ , X) having very strong peak intensity. And, the full width at half maximum and binding energy of neutral donor bound excition were 8mev and 14.1meV, respectively. By Haynes rule, an activation energy of impurity was 141 meV.ion energy of impurity was 141 meV.

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Performance of a Molten Carbonate Fuel Cell With Direct Internal Reforming of Methanol (메탄올 내부개질형 용융탄산염 연료전지의 성능)

  • Ha, Myeong Ju;Yoon, Sung Pil;Han, Jonghee;Lim, Tae-Hoon;Kim, Woo Sik;Nam, Suk Woo
    • Clean Technology
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    • v.26 no.4
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    • pp.329-335
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    • 2020
  • Methanol synthesized from renewable hydrogen and captured CO2 has recently attracted great interest as a sustainable energy carrier for large-scale renewable energy storage. In this study, molten carbonate fuel cell's performance was investigated with the direct conversion of methanol into syngas inside the anode chamber of the cell. The internal reforming of methanol may significantly improve system efficiency since the heat generated from the electrochemical reaction can be used directly for the endothermic reforming reaction. The porous Ni-10 wt%Cr anode was sufficient for the methanol steam reforming reaction under the fuel cell operating condition. The direct supply of methanol into the anode chamber resulted in somewhat lower cell performance, especially at high current density. Recycling of the product gas into the anode gas inlet significantly improved the cell performance. The analysis based on material balance revealed that, with increasing current density and gas recycling ratio, the methanol steam reforming reaction rate likewise increased. A methanol conversion more significant than 90% was achieved with gas recycling. The results showed the feasibility of electricity and syngas co-production using the molten carbonate fuel cell. Further research is needed to optimize the fuel cell operating conditions for simultaneous production of electricity and syngas, considering both material and energy balances in the fuel cell.

Studies on LiF-${Li_2}O-{B_2}{O_3}-{P_2}{O_5}$ based Glassy Solid Electrolytes (LiF-${Li_2}O-{B_2}{O_3}-{P_2}{O_5}$계 유리고체전해질에 관한 연구)

  • Park, Gang-Seok;Gang, Eun-Tae;Kim, Gi-Won;Han, Sang-Mok
    • Korean Journal of Materials Research
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    • v.3 no.6
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    • pp.614-623
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    • 1993
  • Electrical characteristics of LiF-$Li_{2}O-B_{2}O_{3}-P_{2}O_5$ glasses with fixed $Li_2O$ content have been investigated by using AC impedance spectroscopy. Part of the total lithium ions present in these glasses contributes to conduction, and the changes in electrical conductivity with composition was inconsistent with the weak electrolyte model. The power law could not be used to determine the hopping ion concentration in these glasses. Both mobile carrier density and mobility have been modified as Li were added in the form of LiF. The formation of $(B-O-P)^-,di^-$, and metaborate group gave additional available sites for Li+ diffusion causing the enhancement of conductivity. The observed maximum conductivity was $2.43 \times 10^{-4}$S/cm at $150^{\circ}C$ at the composition containing 8mol% LiF. The decomposion potential amounted to 5.94V. The Li/glass electrolyte/$TiS_2$ solid-state cell showed open circuit voltage of 3.14V and energy density of 22 Wh/Kg at $150^{\circ}C$.

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