• Journal of Wetlands Research
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• v.23 no.3
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• pp.252-259
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• 2021

Numerous valley waters originating from Mt. Mudeung and flowing into Gwangju Cheon flowed into the confluence-type sewage conduit, the Gwangju Cheon became dry and water quality deteriorated. In this study, a method to create a stream was studied by using the valley water of Mt. Mudeung in the Gwangju cheon that flows into the sewage treatment plant as a water source. Flow and water quality surveys were investigated at four points with meaningful flow quantity. As a result, it showed a flow quantity was 105~2,721 m³/day at each point. And the average water quality was BOD₅ 0.3~1.6 mg/L. If a stream with a flow quantity of 1,500 m³/day is created during the dry season and then flows into the Namgwang bridge of Gwangju cheon, it is predicted that there will be improvements in BOD 7.3%, COD 6.5%, T-P 5.8%, and T-N 5.2%. In addition, it was determined that the load on the flow quantity of the sewage treatment plant due to the inflow of valley water would be reduced, the cost of sewage treatment would be reduced, and it would be the basis for BGN construction by creating waterside amenity in the city.

• Radiation Oncology Journal
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• v.16 no.4
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• pp.497-504
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• 1998

Purpose : To evaluate the usefulness of electronic portal imaging device through objective compare of the images acquired using an EPID and a conventional port film Materials and Methods : From Apr. to Oct. 1997, a total of 150 sets of images from 20 patients who received radiation therapy in the pelvis area were evaluated in the Inha University Hospital and Severance Hospital. A dual image recording technique was devised to obtain both electronic portal images and port film images simultaneously with one treatment course. We did not perform double exposure five to ten images were acquired from each patient. All images were acquired from posteroanterior (PA) view except images from two patients. A dose rate of 100-300 Mu/min and a 10-MV X-ray beam were used and 2-10 MUs were required to produce a verification image during treatment. Kodak diagnostic film with metal/film imaging cassette which was located on the top of the EPID detector was used for the port film. The source to detector distance was 140 cm. Eight anatomical landmarks (pelvic brim, sacrum, acetabulum. iliopectineal line, symphysis, ischium, obturator foramen, sacroiliac joint) were assessed. Four radiation oncologist joined to evaluate each image. The individual landmarks in the port film or in the EPID were rated - very clear (1), clear (2), visible (3), not clear (4), not visible (5). Results : Using an video camera based EPID system. there was no difference of image quality between no enhanced EPID images and port film images. However, when we provided some change with window level for the portal image, the visibility of the sacrum and obturator foramen was improved in the portal images than in the port film images. All anatomical landmarks were more visible in the portal images than in the port film when we applied the CLAHE mode enhancement. The images acquired using an matrix ion chamber type EPID were also improved image qualify after window level adjustment. Conclusion : The quality of image acquired using an electronic portal imaging device was comparable to that of the port film. When we used the enhance mode or window level adjustment. the image quality of the EPID was superior to that of the port film. EPID may replace the port film.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.15 no.1
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• pp.1-9
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• 2005

A stoichiometric mixture of evaporating materials for AgGaS₂ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, AgGaS₂ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were 590℃ and 440℃, respectively. The temperature dependence of the energy band gap of the AgGaS₂ obtained from the absorption spectra was well described by the Varshni's relation, E/sub g/(T) = 2.7284 eV - (8.695×10/sup -4/ eV/K)T²/(T + 332 K). After the as-grown AgGaS₂ single crystal thin films was annealed in Ag-, S-, and Ga-atmospheres, the origin of point defects of AgGaS₂ single crystal thin films has been investigated by the photoluminescence (PL) at 10 K. The native defects of V/sub Ag/, V/sub s/, Ag/sub int/, and S/sub int/ obtained by PL measurements were classified as a donors or accepters type. And we concluded that the heat-treatment in the Ag-atmosphere converted AgGaS₂ single crystal thin films to an optical n-type. Also, we confirmed that Ga in AgGaS₂/GaAs crystal thin films did not form the native defects because Ga in AgGaS₂ single crystal thin films existed in the form of stable bonds.

• Journal of the Korean Vacuum Society
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• v.15 no.1
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• pp.103-109
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• 2006

A target for a high-brightness microfocus x-ray tube, which is based on carbon nanotubes (CNT) as electron source, is designed. The x-ray tube has the following specifications: brightness of $1\times10^{11}phs/s.mm^2. mrad^2$, spot size $\~5{\mu}m$, and average x-ray energy of $20\~40 keV$. In order to meet the specifications, the design parameters of the target, such as configuration, material, thickness of the target as well as the required beam current, were optimized using computer code MCNPX. The design parameters were determined from the calculation of both x-ray spectrum and intensity distribution for a transmission type configuration. For the thin transmission type target to withstand vacuum pressure and localized thermal loading, the structural stability and temperature distribution were also considered. The material of the target was selected as molybdenum(Mo) and the optimized thickness was $7.2{\mu}m$ to be backed by $150{\mu}m$ beryllium (Be). In addition, the calculations revealed that the maximum temperature of the transmission target can be maintained within the limits of stable operation.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.3 no.1
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• pp.18-25
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• 1978

The 1/f noise spectrum of short-circuited output drain current due to the Shockley-Read-Hal] recombination centers with a single lifetime in homogeneous nondegenerate MOS-field effcte transtors with n-type channel is calculated under the assumptions that the quasi-Fermi level for the carriers in each energy band can not be defined if we include the fluctuation for time varying quantities. and so 1/f noise is a majority carrier effect. Under these assumptions the derived 1/f noise in this paper show some essential features of the 1/f noise in MOS-field effect transistors. That is, it has no lowfrequency plateau and is proportionnal to the channel cross area A and to the driain bias voltage Vd and inversely proportional to the channel length L3 in MOS field effect transistors. This model can explain the discrepancy between the transition frequency of the noise spectrum from 1/f- response to 1/f2 and the frequency corresponding to the relaxation time related to the surface centers in p-n junction diodes. In this paper the results show that the functional form of noise spectrum is greatly influenced by the functional forms of the electron capture probability cn (E) and the relaxation time r (E) for scattering and the case of lattice scattering show to be responsible for the 4 noise in MOS fold effect transistors. So we canconclude that the source of 1/f noise is due to lattice scattering.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.16 no.5
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• pp.189-197
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• 2006

A stoichiometric mixture of evaporating materials for $AgGaSe_2$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $AgGaSe_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy(HWE) system. The source and substrate temperatures were $630^{\circ}C\;and\;420^{\circ}C$, respectively. The temperature dependence of the energy band gap of the $AgGaSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=1.9501eV-(8.79x10^{-4}eV/K)T^2(T+250K)$. After the as-grown $AgGaSe_2$ single crystal thin films was annealed in Ag-, Se-, and Ga-atmospheres, the origin of point defects of $AgGaSe_2$ single crystal thin films has been investigated by the photoluminescence (PL) at 10K. The native defects of $V_{Ag},\;V_{Se},\;Ag_{int},\;and\;Se_{int}$ obtained by PL measurements were classified as a donors or accepters type. And we concluded that the heat-treatment in the Ag-atmosphere converted $AgGaSe_2$ single crystal thin films to an optical p-type. Also, we confirmed that Ga in $AgGaSe_2$/GaAs did not form the native defects because Ga in $AgGaSe_2$ single crystal thin films existed in the form of stable bonds.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.11
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• pp.923-932
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• 2002

A stoichiometric mixture of evaporating materials for CdIn$\_$2/S$\_$4/ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, CdIn$\_$2/S$\_$4/ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by hot wall epitaxy(HWE) system. The source and substrate temperatures were 630 $\^{C}$ and 420 $\^{C}$, respectively. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction(DCXD). The carrier density and mobility of CdIn$\_$2/S$\_$4/ single crystal thin films measured from Hall effect by van der Pauw method are 9.01$\times$10$\^$16/ cm$\^$-3/ and 219 ㎠/V$.$s at 293 K, respectively. From the optical absorption measurement, the temperature dependence of energy band gap on CdIn$\_$2/S$\_$4/ single crystal thin films was found to be Eg(T) ＝ 2.7116 eV - (7.74 $\times$ 10$\^$-4/ eV) T$\^$2//(T＋434). After the as-grown CdIn$\_$2/S$\_$4/ single crystal thin films was annealed in Cd-, S-, and In-atmospheres, the origin of point defects of CdIn$\_$2/S$\_$4/ single crystal thin films has been investigated by the photoluminescence(PL) at 10 K. The native defects of V$\_$cd/, V$\_$s/, Cd$\_$int/ and S$\_$int/ obtained by PL measurements were classified as donors or accepters type. And we concluded that the heat-treatment in the S-atmosphere converted CdIn$\_$2/S$\_$4/ single crystal thin films to an optical p-type. Also, we confirmed that In in CdIn$\_$2/S$\_$4/GaAs did not from the native defects because In in CdIn$\_$2/S$\_$4/ single crystal thin films existed in the form of stable bonds.

• Journal of Bio-Environment Control
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• v.19 no.4
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• pp.333-342
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• 2010

For the energy-saving production of fresh vegetables in poor environment such as the Antarctic, a container-type plant factory was designed and developed. To maximize space usage of the 20 feet container ($L5.9m{\times}W2.4m{\times}H2.4m$), a three-level hydroponic cultivation system was installed and the nutrient solution was supplied by bottom watering. Using this system, 3 lettuce cultivars were grown under different the light source (light intensity). After 2 weeks from the transplanting, fluorescent lamp ($145\;{\mu}mol{\cdot}m^{-2}{\cdot}s^{-1}$) showed the best fresh weight of top part and leaf area. However, After 4 weeks, fluorescent lamp plus metal halide lamp ($150\;{\mu}mol{\cdot}m^{-2}{\cdot}s^{-1}$) led to the optimum growth of the each lettuce cultivar. The cultivar, 'Cheongchima', showed the best fresh weight of top part and leaf area, followed by 'Jeokchukmyeon' and 'Lollo rosa'. The chlorophyll concentrations (SPAD) showed no significant difference among the sources of lights. However, 'Cheongchima' showed relatively high chlorophyll concentration. With the above results, we found that the growth of lettuce is depend on light intensity and even at same intensity, the growth is different among the cultivars. Therefore, the selection of optimum cultivar should be considered in the plant factory system that has only weak light density.

• Journal of the Korean Society for Nondestructive Testing
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• v.25 no.2
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• pp.117-126
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• 2005

A stoichiometric mixture of evaporating materials for $AgGaS_2$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $AgGaS_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were $590^{\circ}C\;and\;440^{\circ}C$, respectively The temperature dependence of the energy band gap of the $AgGaS_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=2.7284 eV-(8.695{\times}10^{-4}eV/K)T^2/T(T+332K)$. After the as-grown $AgGaS_2$, single crystal thin films was annealed in Ag-, S-, and Ga-atmospheres, the origin of point defects of $AgGaS_2$ single crystal thin films has been investigated by the photoluminescence(PL) at 10K. The native defects of $V_{Ag},\;V_s,\;Ag_{int},\;and\;S_{int}$, obtained by PL measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment in the Ag-atmosphere converted $AgGaS_2$ single crystal thin films to an optical n-type. Also, we confirmed that Ga in $AgGaS_2$ crystal thin films did not form the native defects because Ga in $AgGaS_2$ single crystal thin films existed in the form of stable bonds.

• Journal of the Korean Society of Radiology
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• v.12 no.1
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• pp.31-37
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• 2018

In the surface contamination test using the end-window Geiger-Muller type counter, the wrap is used as a method for protecting the detector exposed to the outside in order to measure the beta-rays. We analyze the effect of this method on the measurement rate and the correction factor, and wanted to make it clear to radiation workers that excessive use of the wrap can affect the measured value of the beta-rays. The experimental method was to compare and analyze the change of the beta-rays measurement counting rate and the calibration factor according to the wrap thickness using the beta-rays with different energy of 3 KBq, 1.5 KBq and 0.3 KBq. The subjects of this study were the end-window Geiger-Muller type counter which were held at the calibration center certified by Korea Laboratory Accreditation Scheme (KOLAS) in March 2012, Cl-36 (Chlorine) and Sr-90 (Strontium) were used as the source of beta radiation. The measurement counting rate decreased with increasing wrap thickness, and the calibration factor increased with increasing wrap thickness. Since the changes of the measurement counting rate and the calibration factors can reduce the accuracy of the instrument readings, but also have a significant impact on detector contamination and damage, so there is a need to find out what thickness of wrap is most effective. If we using a wraps with thickness that show a low rate of change of the measurement counting rate and the calibration factor, it will protect the detector and minimize the effect on the measured value of the beta-rays.