• 한국의상디자인학회지
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• 제22권2호
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• pp.117-136
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• 2020

The purpose of this study is to analyze changes in high-tech fashion along with the types and characteristics of high-tech fashion that have appeared recently providing diverse material for the fashion field. High-tech fashion requires such research to learn how much distance one has in one's life. It is also meaningful to predict what direction high-tech fashion research may be needed. For research methods, previous research and literary studies were considered and photographs in which high-tech techniques were used were collected using the keyword 'high-tech fashion'. High-tech fashion types can be organized into the four types of luminescent types, mutual interaction types, 3D printing fashion, and virtual fashion. The research results were as follows. First, luminescent fashion was an important expression method of high-tech fashion. Materials for luminescent fashion first started with LED electric wire connections and many methods have been attempted with the appearance of electrically conductive clothing material, such as luminescent lasers and beam projectors. Second, interactive high-tech fashion often appears as variable fashion. The work of Hussein Chalayan, which was combined with advanced technology, set up a base for variable type interactive high-tech fashion in the 2000s. As bioengineering technology has developed, fashion that interacts with the environment without an energy source has appeared and the interaction among fashion, people, and the environment can be seen. Third, diverse forms of expressiveness in virtual reality such as 3D CLO shows a great difference with past high-tech fashion. Simple and diverse attempts made through virtual fittings reduce the limitations of time and space, permit interaction, and add a sense of reality through speed and dynamic physical beauty. Fourth, 3D printed fashion expresses complex and detailed clothing material that is different from those before with the development of computer 3D modeling technology. Modeling that can imitate geometric and bio-engineered structures is possible and mysterious feelings are passed on to people through creative expressions.

• 대한기계학회논문집
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• 제12권3호
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• pp.520-527
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• 1988

본 연구에서는 액체용 이젝터의 성능을 결정하는 여러가지 제약인자중 특히 레이놀즈수 변화에 따른 구동노즐의 면적비 및 목부길이가 액체용 이제터성능에 미치 는 영향을 체계적인 실험을 통하여 연구함으로써 기 개발된 CAD용 전산프로그램의 타 당성을 보다 세밀히 검토하고 이에 보완을 가하는데 연구의 목적이 있다.

• 한국레이저가공학회지
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• 제7권3호
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• pp.37-46
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• 2004

The shape and size variations of the nanopatterns produced on a polymer film using a near-field scanning optical microscope(NSOM) are investigated with respect to the process variables. A cantilever type nanoprobe having a 100nm aperture at the apex of the pyramidal tip is used with the NSOM and a He-Cd laser at a wavelength of 442nm as the illumination source. Patterning characteristics are examined for different laser beam power at the entrance side of the aperture($P_{in}$), scan speed of the piezo stage(V), repeated scanning over the same pattern, and operation modes of the NSOM(DC and AC modes). The pattern size remained almost the same for equal linear energy density. Pattern size decreased for lower laser beam power and greater scan speed, leading to a minimum pattern width of around 50nm at $P_{in}=1.2{\mu}W\;and\;V=12{\mu}m/s$. Direct writing of an arbitrary pattern with a line width of about 150nm was demonstrated to verify the feasibility of this technique for nanomask fabrication. Application on high-density data storage is discussed.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1999년도 제17회 학술발표회 논문개요집
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• pp.79-79
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• 1999

The varous techniques for fabrication of si or metal tip as a field emission electron source have been reported due to great potential capabilities of flat panel display application. In this report, 240nm thermal oxide was initially grown at the p-type (100) (5-25 ohm-cm) 4 inch Si wafer and 310nm Si3N4 thin layer was deposited using low pressure chemical vapor deposition technique(LPCVD). The 2 micron size dot array was photolithographically patterned. The KOH anisotropic etching of the silicon substrate was utilized to provide V-groove formation. After formation of the V-groove shape, dry oxidation at 100$0^{\circ}C$ for 600 minutes was followed. In this procedure, the orientation dependent oxide growth was performed to have a etch-mask for dry etching. The thicknesses of the grown oxides on the (111) surface and on the (100) etch stop surface were found to be ~330nm and ~90nm, respectively. The reactive ion etching by 100 watt, 9 mtorr, 40 sccm Cl2 feed gas using inductively coupled plasma (ICP) system was performed in order to etch ~90nm SiO layer on the bottom of the etch stop and to etch the Si layer on the bottom. The 300 watt RF power was connected to the substrate in order to supply ~(-500)eV. The negative ion energy would enhance the directional anisotropic etching of the Cl2 RIE. After etching, remaining thickness of the oxide on the (111) was measured to be ~130nm by scanning electron microscopy.

• 한국의학물리학회지:의학물리
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• 제26권1호
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• pp.36-41
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• 2015

정위체부방사선수술(SBRT) 환자의 선량분포를 계산하기 위해 전산모사 방식을 이용한 응용프로그램을 개발 하였다. 본 소프트웨어는 최근 이용이 활발하게 증가하고 있는 Geant4를 기반으로 개발 하였다. 환자에 조사하기 위한 광자선 스펙트럼은 이전 연구에서 구한 선형가속기 스펙트럼 자료를 사용하였다. 치료계획시스템과 유사한 조사면을 구현하기 위하여 PrimaryGeneratorAction 클래스에서 MLC 조사면 형태를 반영하도록 하였다. 본 연구에서는 8개 조사면에 대한 계산을 수행하였으며 이 때 갠트리의 각도는 PrimaryGeneratorAction 클래스에서 회전 매트릭스를 사용하여 선원의 위치를 변경하는 방법을 사용하였다. 환자에 대한 물질 자료는 CT의 dicom 파일에서 픽셀 크기, 매트릭스 크기 등의 정보와 픽셀의 HU를 밀도로 변환한 파일을 생성한 다음 이 파일을 이용 환자의 모델링에 이용 하였다. 환자의 물질 구성과 기하학적 자료의 입력에 있어 EGSnrc 코드와의 비교를 통하여 계산의 효율성을 비교하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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• pp.386-391
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• 2003

Sing1e crystal $CuAlSe_2$ layers were grown on thoroughly etched semi-insulating GaAs(100) substrate at $410^{\circ}C$ with hot wall epitaxy (HWE) system by evaporating $CuAlSe_2$source at $680^{\circ}C$. The crystalline structure of the single crystal thin films was investigated by the photoluminescence(PL) and double crystal X-ray diffraction (DCXD). The carrier density and mobility of single crystal $CuAlSe_2$ thin films measured with Hall effect by van der Pauw method are $9.24{\times}10^{16}\;cm^{-3}$ and $295\;cm^2/V{\cdot}\;s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $CuAlSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)\;=\;2.8382\;eV\;-\;(8.86\;{\times}\;10^{-4}\;eV/K)T^2/(T\;+\;155K)$. After the as-grown single crystal $CuAlSe_2$ thin films were annealed in Cu-, Se-, and Al-atmospheres, the origin of point defects of single crystal $CuAlSe_2$ thin films has been investigated by PL at 10 K. The native defects of $V_{Cd}$, $V_{Se}$, $Cd_{int}$, and $Se_{int}$ obtained by PL measurements were classified as donors or accepters. And we concluded that the heat-treatment in the Cu-atmosphere converted single crystal $CuAlSe_2$ thin films to an optical n-type. Also, we confirmed that Al in $CuAlSe_2/GaAs$ did not form the native defects because Al in single crystal $CuAlSe_2$ thin films existed in the form of stable bonds.

• 한국전기전자재료학회논문지
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• 제16권10호
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• pp.871-880
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• 2003

Single crystal CuAlSe$_2$ layers were grown on thoroughly etched semi-insulating GaAs(100) substrate at 410 C with hot wall epitaxy (HWE) system by evaporating CuAlSe$_2$ source at 680 C. The crystalline structure of the single crystal thin films was investigated by the photoluminescence(PL) and double crystal X -ray diffraction (DCXD). The carrier density and mobility of single crystal CuAlSe$_2$ thin films measured with Hall effect by van der Pauw method are 9.24${\times}$10$\^$16/ cm$\^$-3/ and 295 cm$^2$/V $.$ s at 293 K, respectively. The temperature dependence of the energy band gap of the CuAlSe$_2$ obtained from the absorption spectra was well described by the Varshni's relation, Eg(T) = 2.8382 eV - (8.86 ${\times}$ 10$\^$-4/ eV/K)T$^2$/(T + 155K). After the as-grown single crystal CuAlSe$_2$ thin films were annealed in Cu-, Se-, and Al-atmospheres, the origin of point defects of single crystal CuAlSe$_2$ thin films has been investigated by PL at 10 K. The native defects of V$\_$cd/, V$\_$se/, Cd$\_$int/, and Se$\_$int/ obtained by PL measurements were classified as donors or acceptors. And we concluded that the heat-treatment in the Cu-atmosphere converted single crystal CuAlSe$_2$ thin films to an optical n-type. Also, we confirmed that Al in CuAlSe$_2$/GaAs did not form the native defects because Al in single crystal CuAlSe$_2$ thin films existed in the form of stable bonds.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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• pp.76-77
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• 2005

Single crystal $CuAlSe_2$ layers were grown on thoroughly etched semi-insulating GaAs(100) substrate at 410$^{\circ}C$ with hot wall epitaxy (HWE) system by evaporating $CuAlSe_2$ source at $680^{\circ}C$. The crystalline structure of the single crystal thin films was investigated by the photoluminescence(PL) and double crystal X-ray diffraction (DCXO). The temperature dependence of the energy band gap of the $CuAlSe_2$ obtained from the absorpt ion spectra was wel1 described by the Varshni's relation, $E_g$(T) = 2.8382 eV - ($8.86\times10^{-4}$ eV/H)$T_2$/(T + 155K). After the as-grown single crystal $CuAlSe_2$ thin films were annealed in Cu-, Se-, and Al-atmospheres, the origin of point defects of single crystal $CuAlSe_2$ thin films has been investigated by PL at 10 K. The native defects of $V_{cd}$, $V_{se}$, $Cd_{int}$, and $Se_{int}$ obtained by PL measurements were classified as donors or acceptors. And we concluded that the heat-treatment in the Cu-atmosphere converted single crystal $CuAlSe_2$ thin films to an optical n-type. Also. we confirmed that hi in $CuAlSe_2$/GaAs did not form the native defects because Al in single crystal $CuAlSe_2$ thin films existed in the form of stable bonds.

• 동력기계공학회지
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• 제16권4호
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• pp.30-36
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• 2012

A scroll expander has been designed to produce a shaft power from a R134a Rankine cycle for electricity generation. Heat was supplied to the Rankine cycle through a heat exchanger, which received heat from another cycle of water. In the water cycle, water was heated up in a boiler using biogenic solid fuel. The designed scroll expander was a horizontal type, and a trochoidal oil pump was employed for oil supply to bearings and Oldham-ring keys. For axial compliance, a back pressure chamber was created on the backside of the orbiting scroll base plate. Numerical study has been carried out to estimate the performance of the designed scroll expander. The expander was estimated to produce the shaft power of about 2.9 kW from a heat supply of 36 kW, when the temperature of R134a was $80^{\circ}C$ and $35^{\circ}C$ at the evaporator and condenser of the Rankine cycle, respectively. The expander efficiency was about 70.5%. When the amount of heat supply varied in the ranges of 7.5~55 kW, the expander efficiency changed in the range of 45.6~70.5%, showing a peak efficiency of 70.5% at the design shaft speed.

• 한국재료학회지
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• 제23권5호
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• pp.255-259
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• 2013

An effect of thermal annealing on activating phosphorus (P) atoms in ZnO nanorods (NR) grown using a hydrothermal process was investigated. $NH_4H_2PO_4$ used as a dopant source reacted with $Zn^{2+}$ ions and $Zn_3(PO_4)_2$ sediment was produced in the solution. The fact that most of the input P elements are concentrated in the $Zn_3(PO_4)_2$ sediment was confirmed using an energy dispersive spectrometer (EDS). After the hydrothermal process, ZnO NRs were synthesized and their PL peaks were exhibited at 405 and 500 nm because P atoms diffused to the ZnO crystal from the $Zn_3(PO_4)_2$ particles. The solubility of the $Zn_3(PO_4)_2$ initially formed sediment varied with the concentration of $NH_4OH$. Before annealing, both the structural and the optical properties of the P-doped ZnO NR were changed by the variation of P doping concentration, which affected the ZnO lattice parameters. At low doping concentration of phosphorus in ZnO crystal, it was determined that a phosphorus atom substituted for a Zn site and interacted with two $V_{Zn}$, resulting in a $P_{Zn}-2V_{Zn}$ complex, which is responsible for p-type conduction. After annealing, a shift of the PL peak was found to have occurred due to the unstable P doping state at high concentration of P, whereas at low concentration there was little shift of PL peak due to the stable P doping state.