• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.1
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• pp.75-80
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• 2006

We have fabricated a carbon nanotube field emission display(CNT-FED) panel with a 2 inch diagonal size using a screen printing method and in-situ vacuum sealing technology. The field emission properties of CNT FED panel with square-type CNT emitters. As results, the square-characterized and compared with those of the line-type CNT emitters. As results, the square-type CNT emitters showed much larger emission current and more stable I-V characteristics. Light emission started to be occurred at an electric field of 3.5 V/${\mu}m$ corresponding to the anode-cathode voltage of 700 V. The vacuum level inside of the in-situ vacuum sealed panel was obtained with $1.4 {\times} 10^{-5}$ torr. The sealed panel showed the similar I-V characteristics with the unsealed one and the uniform light emission with very high brightness at a current density of $243 {\mu}A/ cm^2$ obtained by the electric field of 10 V/${\mu}m$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.2
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• pp.162-172
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• 2008

We studied the effect of an Al underlayer on the growth of carbon nanotubes (CNTs) and their field emission characteristics, First of all, CNTs were grown on the Invar catalyst layers with different thickness of 1 to 10 nm, showing that the CNT length was saturated for the catalyst 5 nm or thicker. The CNTs grown on the 5-nm-thick catalyst were ${\sim}10{\mu}m$ long and ${\sim}30nm$ in diameter. Second, an Al underlayer was applied between the catalyst layer and the Ti diffusion barrier to reduce the diameters of CNTs for better field emission properties by forming spherical Al oxide particles on which smaller catalyst nanoparticles would occur. The optimal thickness of an Al underlayer underneath the 5-nm-thick catalyst was ${\sim}15nm$, producing the CNTs with the length of ${\sim}15{\mu}m$ and the diameter of ${\sim}15nm$. The field emission measurements, following the tape activation, showed that the thinner and longer CNTs gave rise to better field emission performance with the lower turn-on and threshold electric fields.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.04b
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• pp.143-146
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• 2000

We studied effects of alkyl($C_nH_{2n+1}$) chain length on characteristics of poly(3-alkylthiophene) electroluminescent diodes. Among the poly(3-alkylthiophene), poly(3-hexylthiophene)(n=6) and poly(3- octyIthiophene)(n=8) were mainly used for the emitting layer of the diode. The result of experiment, the emission intensity of poly(3-alkylthiophene) electroluminescent diodes depends on the alkyl chain length. Strong emission is obtained from a poly(3-alkylthiophene) diodes of long alkyl side chain length. Emission intensities are enhanced by a confinement of carriers on a main chain with a long interchain distance caused by a long alkyl side chain.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.968-971
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• 2002

Hole injection characteristics have been investigated with various metal anodes such as Ni, Pt, Cu, and AI for the top emission polymer light emitting diodes (PLEDs). Devices were composed of metal anode, Poly(3,4-ethylenedioxythiophene) doped with polystyrene sultponated acid (PEDT:PSS), poly [2-methoxy-5-(2-ethylhexyoxy)-1,4-phenylene-vinylene] (MEH-PPV) and Al cathode. The hole injection from ITO anode has been also investigated for the comparison. The I-V characteristics of the PLEDs with different metal anodes were measured. The work function of the anode is strongly related to the hole injection of the device. The current density of the device with Ni anode with higher work function was higher than that of the device with ITO or AI anode at the same operating voltage.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.1594-1597
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• 2008

Carbon nanotube (CNT) cathodes were fabricated using nano-sized silver powders as a bonding material. The effects of powder size on the field emission properties for the CNT cathode were investigated The better emission properties of CNT cathodes using smaller particles are due to a low sintering temperature of the bonding materials.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.8
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• pp.713-719
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• 2002

In this study, the vertically well-aligned CNTs were synthesized by DC bias-assisted inductively coupled plasma hot-filament chemical vapor deposition (ICPHFCVD) using radio-frequence plasma of high density and that CNTs were vertically grown on Ni(300 )/Cr(200 )-deposited glass substrates at 58$0^{\circ}C$. This system(ICPHFCVD) added to tungsten filament in order to get thermal decompound and DC bias in order to vertically grow to general Inductively Coupled Plasma CVD. The grown CNTs by ICPHFCVD were developed to higher graphitization and fewer field emission properties than those by general ICPCVD. In this system, DC bias was effect of vortical alignment to growing CNTs. The measured turn-on fields of field emission property by general ICPCVD and DC bias-assisted ICPHFCVD were 5 V/${\mu}{\textrm}{m}$ and 3 V/${\mu}{\textrm}{m}$, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.04a
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• pp.84-87
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• 2003

Carbon-nitrogen (CN) nanofibers have been produced using a water cooled hot isostatic pressure (HIP) apparatus. The CN nanofibers were grown in random with the diameter of about 100-150nm and length over $10{\mu}m$. Emission properties of CN nanofibers were investigated for spacing, between anode and cathode, variation. Then turn-on fields about $1.4V/{\mu}m$. The time reliability and light emission test were carried out for above 100 hours. We suggest that CN nanofibers can be possibly applied to high brightness flat lamp because of low turn-on field and time reliability.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1994.11a
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• pp.50-53
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• 1994

In this study. we report the properties of optically pumped stimulated emission at room temperature (RT) from column-III nitride semiconductors of GaN, GaInN, AlGaN/GaN double hetero-structure (DH) and AlGaN/GaInN DH which grown by low pressure metal-organic vapor phase epitaxy on sapphire substrate using an AIN buffer-layer. The peak wavelength of the stimulated emission at RT from AlGaN/GaN DH is 370nm and the threshold of excitation pumping power density (P$\_$th/) is about 89㎾/$\textrm{cm}^2$, and they from AlGaN/GaInN DH are 403nm and 130㎾/$\textrm{cm}^2$, respectively. The P$\_$th/ of AlGaN/GaN and AlGaN/GaInN DHs are lower than the bulk materials due to optical confinement within the active layers of GaN and GaInN. The optical gain and the polarization of stimulated emission characteristics are presented in this article.

• Journal of the Korean Society for Precision Engineering
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• v.15 no.6
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• pp.48-57
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• 1998

Abrasive waterjet(AWJ)은 가공시 열에 의한 가공경화가 없기 때문에 유리, 세라믹, 타이타늄및 금속복합재료와 같은 난삭재의 가공기술로 사용이 증가되었다. Acoustic emission(AE)신호에 의한 AWJ 세라믹 drilling가공시 On-Line Monitoring의 가능성이 고찰되었다. 기계 적인 물성이 서로 상이한 3종류의 세라믹이 본 연구에서 사용되었으며, AE신호는 AWJ drilling의 깊이를 monitoring하는데 유용함을 알 수 있었고 또한 세라믹의 material removal mechanisms을 규명하였다.

• 한국정보디스플레이학회:학술대회논문집
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• 2000.01a
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• pp.33-34
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• 2000

The effect of $Y^{3+}$ addition to $SrTiO_3:Pr^{3+}$ on the photoluminescence and cathodoluminescence was studied. We discovered that light emitting levels of $Pr^{3+}$ vary by addition of $Y^{3+}$. In $(Sr_{1-x}Y_x)TiO_3:Pr^{3+}$, both the green and red emission are discovered while the red emission prevails in $Sr(Ti_{1-x}Y_x)O_3:Pr^{3+}$ . $Sr(Ti_{1-x}Y_x)O_3:Pr^{3+}$ shows enhancement of red emission by two kinds of enhancement process.