• Korean Journal of Materials Research
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• v.23 no.3
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• pp.155-160
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• 2013

ZnO thin films co-doped with Mg and Ga (MxGyZzO, x + y + z = 1, x = 0.05, y = 0.02 and z = 0.93) were prepared on glass substrates by RF magnetron sputtering with different sputtering powers ranging from 100W to 200W at a substrate temperature of $350^{\circ}C$. The effects of the sputtering power on the structural, morphological, electrical, and optical properties of MGZO thin films were investigated. The X-ray diffraction patterns showed that all the MGZO thin films were grown as a hexagonal wurtzite phase with the preferred orientation on the c-axis without secondary phases such as MgO, $Ga_2O_3$, or $ZnGa_2O_4$. The intensity of the diffraction peak from the (0002) plane of the MGZO thin films was enhanced as the sputtering power increased. The (0002) peak positions of the MGZO thin films was shifted toward, a high diffraction angle as the sputtering power increased. Cross-sectional field emission scanning electron microscopy images of the MGZO thin films showed that all of these films had a columnar structure and their thickness increased with an increase in the sputtering power. MGZO thin film deposited at the sputtering power of 200W showed the best electrical characteristics in terms of the carrier concentration ($4.71{\times}10^{20}cm^{-3}$), charge carrier mobility ($10.2cm^2V^{-1}s^{-1}$) and a minimum resistivity ($1.3{\times}10^{-3}{\Omega}cm$). A UV-visible spectroscopy assessment showed that the MGZO thin films had high transmittance of more than 80 % in the visible region and that the absorption edges of MGZO thin films were very sharp and shifted toward the higher wavelength side, from 270 nm to 340 nm, with an increase in the sputtering power. The band-gap energy of MGZO thin films was widened from 3.74 eV to 3.92 eV with the change in the sputtering power.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.03a
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• pp.16-16
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• 2010

GaN-based light-emitting diodes (LEDs) are attracting great interest as candidates for next-generation solid-state lighting, because of their long lifetime, small size, high efficacy, and low energy consumption. However, for general illumination applications, the external quantum efficiency of LEDs, determined by the internal quantum efficiency (IQE) and the light extraction efficiency, must be further increased. The IQE is determined by crystal quality and epitaxial layer structure and high value of IQE more than 70% for blue LEDs have been already reported. However, there is much room for improvement of light extraction efficiency because most of the generated photons from active layer remain inside LEDs by total internal reflection at the interface of semiconductor with air due to the high refractive index difference between LEDs epilayer (for GaN, n=2.5) and air (n=1). The light confining in LEDs will be reabsorbed by the metal electrode or active layer, reducing the efficacy of LEDs. Here, we present the first demonstration of enhanced light extraction by forming a MgO nano-pyramids structure on the surface of vertical-LEDs. The MgO nano-pyramids structure was successfully fabricated at room temperature using conventional electron-beam evaporation without any additional process. The nano-sized pyramids of MgO are formed on the surface during growth due to anisotropic characteristics between (111) and (200) plane of MgO. The ZnO layer with quarter-wavelength in thickness is inserted between GaN and MgO layers to increase the critical angle for total internal reflection, because the refractive index of ZnO (n=1.94) could be matched between GaN (n=2.5) and MgO (n=1.73). The MgO nano-pyramids structure and ZnO refractive-index modulation layer enhanced the light extraction efficiency ofV-LEDs with by 49%, comparing with the V-LEDs with a flat n-GaN surface. The angular-dependent emission intensity shows the enhanced light extraction through the side walls of V-LEDs as well as through the top surface of the n-GaN, because of the increase in critical angle for total internal reflection as well as light scattering at the MgO nano-pyramids surface.

• Journal of the Microelectronics and Packaging Society
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• v.12 no.2 s.35
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• pp.155-159
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• 2005

In this report, Polymer light emitting diodes (PLEDs) with an ITO/PEDOT:PSS/MEH-PPV/Al structure were prepared by spin coating method on the glass substrate patterned ITO (indium tin oxide), using PEDOT:PSS(poly(3,4=ethylenedioxythiophene):poly(styrene sulfolnate)) as the hole transfer material and MEH-PPV(poly(2-methoxy-5-(2-ethyhexoxy)-1,4-phenylenvinylene)) having a different concentration (0.1, 0.3, 0.5, 0.7, 0.9, 1.5 wt$\%$) as the emitting material. The electrical and optical properties of the prepared PLED samples were investigated. The good electrical and optical properties were observed for the PLED samples with a MEH-PPV concentration ranging from 0.5 to $0.9 wt\%$. However, the current and luminance values for PLED sample with $1.5 wt\%$ of MEH-PPV decreased greatly. The maximum luminance and light efficiency for the PLEDs with concentration of $0.5 wt\%$ MEH-PPV were $409 cd/m^2$ and 4.90 Im/W at 9 V, respectively. The emission spectrums were found to be $560{\~}585 nm$ in wavelength showing orange color.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.12
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• pp.11-17
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• 2000

We investigated the growth of InGaN/GaN multiple quantum wells (MQWs) structures which emit blue light. The samples were grown in a low pressure metalorganic chemical vapor deposition system. We examined InGaN/GaN MQWs by varying growth temperatures and thicknesses of InGaN well and GaN barrier layers in MQWs. Especially, the thickness of GaN barrier in InGaN/GaN MQWs was found to severely affect the interfacial abruptness between InGaN well and GaN barrier layers. The higher order satellite peaks in the high resolution x-ray diffraction spectra and the high resolution cross sectional transmission electron microscope image of MQW structrues revealed that the interface between InGaN and GaN layers was very abrupt. Room-temperature photoluminescence spectra also showed a blue emission from InGaN/GaN MQWs at the wavelength of 463.5nm with a narrow full width at half maximum of 72.6meV.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.20 no.5
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• pp.1-6
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• 2019

Organic dye-doped silica nanoparticles are used as a promising nanomaterials for bio-labeling, bio-imaging and bio-sensing. Fluorescent silica nanoparticles(NPs) have been synthesized by the modified $St{\ddot{o}}ber$ method. In this study, dye-free fluorescent silica NPs of various sized were synthesized by Sol-Gel process as the modified $St{\ddot{o}}ber$ method. The functional material of APTES((3-aminopropyl)triethoxysilane) was added as an additive during the Sol-Gel process. The as-synthesized silica NPs were calcined at $400^{\circ}C$ for 2 hours. The surface morphology and particle size of the as-synthesized silica NPs were characterized by field-emission scanning electron microscopy. The fluorescent characteristics of the as-synthesized silica NPs was confirmed by UV lamp irradiation of 365 nm wavelength. The photoluminescence (PL) of the as-synthesized silica NPs with different size was analyzed by fluorometry. As the results, the as-synthesized silica NPs exhibits same blue fluorescent characteristics for different NPs size. Especially, as increased of the silica NPs size, the intensity of PL was decreased. The blue fluorescence of dye-free silica NPs was attributed to linkage of $NH_2$ groups of the APTES layer and oxygen-related defects in the silica matrix skeleton.

• Journal of Environmental Health Sciences
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• v.47 no.6
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• pp.540-547
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• 2021

Background: Indoor air pollutants are caused by a number of factors, such as coming in from the outside or being generated by internal activities. Typical indoor air pollutants include nitrogen dioxide and carbon monoxide from household items such as heating appliances and volatile organic compounds from building materials. In addition there is carbon dioxide from human breathing and bacteria from speaking, coughing, and sneezing. Objectives: According to recent research results, most indoor air pollution is known to be greatly affected by internal factors such as burning (biomass for cooking) and various pollutants. These pollutants can have a fatal effect on the human body due to a lack of ventilation facilities. Methods: We fabricated a polydopamine (PDA) layer with Ti substrates as a coating on supported glass fiber fabric to enhance its photo-activity. The PDA layer with TiO₂ was covalently attached to glass fiber fabric using the drop-casting method. The roughness and functional groups of the surface of the Ti substrate/PDA coated glass fiber fabric were verified through infrared imaging microscopy and field emission scanning electron microscopy (FE-SEM). The obtained hybrid Ti substrate/PDA coated glass fiber fabric was investigated for photocatalytic activity by the removal of ammonia and an epidermal Staphylococcus aureus reduction test with lamp (250 nm, 405 nm wavelength) at 24℃. Results: Antibacterial properties were found to reduce epidermal staphylococcus aureus in the Ti substrate/PDA coated glass fiber fabric under 405 nm after three hours. In addition, the Ti substrate/PDA coated glass fiber fabric of VOC reduction rate for ammonia was 50% under 405 nm after 30 min. Conclusions: An electron-hole pair due to photoexcitation is generated in the PDA layer and transferred to the conduction band of TiO₂. This generates a superoxide radical that degrades ammonia and removes epidermal Staphylococcus aureus.

• Journal of Powder Materials
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• v.31 no.2
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• pp.169-179
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• 2024

Colloidal quantum dot (QDs) have emerged as a crucial building block for LEDs due to their size-tunable emission wavelength, narrow spectral line width, and high quantum efficiency. Tremendous efforts have been dedicated to improving the performance of quantum dot light-emitting diodes (QLEDs) in the past decade, primarily focusing on optimization of device architectures and synthetic procedures for high quality QDs. However, despite these efforts, the commercialization of QLEDs has yet to be realized due to the absence of suitable large-scale patterning technologies for high-resolution devices., This review will focus on the development trends associated with transfer printing, photolithography, and inkjet printing, and aims to provide a brief overview of the fabricated QLED devices. The advancement of various quantum dot patterning methods will lead to the development of not only QLED devices but also solar cells, quantum communication, and quantum computers.

• Journal of the Korean Vacuum Society
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• v.18 no.4
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• pp.288-295
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• 2009

We report the etch characteristics of GaAs and AlGaAs in the diffusion pump-based capacitively coupled $BCl_3$ plasma. Process variables were chamber pressure ($50{\sim}180$ mTorr), CCP power ($50{\sim}200\;W$) and $BCl_3$ gas flow rate ($2.5{\sim}10$ sccm). Surface profilometry was used for etch rate and surface roughness measurement after etching. Scanning electron microscopy was used to analyze the etched sidewall and surface morphology. Optical emission spectroscopy was used in order to characterize the emission peaks of the $BCl_3$ plasma during etching. We have achieved $0.25{\mu}m$/min of GaAs etch rate with only 5 sccm $BCl_3$ flow rate when the chamber pressure was in the range of 50{\sim}130 mTorr. The etch rates of AlGaAs were a little lower than those of GaAs at the conditions. However, the etch rates of GaAs and AlGaAs decreased significantly when the chamber pressure increased to 180 mTorr. GaAs and AlGaAs were not etched with 50 W CCP power. With $100{\sim}200\;W$ CCP power, etch rates of the materials increased over $0.3{\mu}m$/min. It was found that the etch rates of GaAs and AlGaAs were not always proportional to the increase of CCP power. We also found the interesting result that AlGaAs did not etched at 2.5 sccm $BCl_3$ flow rate at 75 mTorr and 100 W CCP power even though it was etched fast like GaAs with more $BCl_3$ gas flow rates. By contrast, GaAs was etched at ${{\sim}}0.3{\mu}m$/min at the 2.5 sccm $BCl_3$ flow rate condition. A broad molecular peak was noticed in the range of $500{\sim}700\;mm$ wavelength during the $BCl_3$ plasma etching. SEM photos showed that 10 sccm $BCl_3$ plama produced more undercutting on GaAs sidewall than 5 sccm $BCl_3$ plasma.

• Analytical Science and Technology
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• v.28 no.6
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• pp.409-416
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• 2015

ICP-AES has been used in many laboratories due to the advantages of wide calibration range and multi-element analysis, but it may give erroneous results and suffer from spectral interference due to the large number of emission lines associated with each element. In this study, certified reference materials (CRMs) and field samples were analyzed by ICP-AES and HG-AAS according to the official Korean testing method for soil pollution to investigate analytical problems. The applicability of HG-ICP-AES was also tested as an alternative method. HG-AAS showed good accuracies (90.8~106.3%) in all CRMs, while ICP-AES deviated from the desired range in CRMs with low arsenic and high Fe/Al. The accuracy in CRM030 was estimated as below 39% at the wavelength of 193.696 nm by ICP-AES. Significant partial overlaps and sloping background interferences were observed near to 193.696 nm with the presence of 50 mg/L Fe and Al. Most CRMs were quantified with few or no interferences of Fe and Al at 188.980 nm. ICP-AES properly assessed low and high level arsenic for field samples, at 188.980 nm and 193.696 nm, respectively. The importance of the choice of measurement wavelengths corresponding to relative arsenic level should be noted. Because interferences were affected by the sample matrix, operation conditions and instrument figures, the analysts were required to consider spectral interferences and compare the analytical performance of the recommended wavelengths. HG-ICP-AES was evaluated as a suitable alternative method for ICP-AES due to improvement of the detection limit, wide calibration ranges, and reduced spectral interferences by HG.

• Atmosphere
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• v.21 no.4
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• pp.429-438
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• 2011

The climatology of surface UV radiation for Seoul, presented in Cho et al. (1998; 2001), has been updated using measurement of surface erythemal ultraviolet (EUV) and total ultraviolet (TUV) irradiance (wavelength 286.5~363.0 nm) by a Brewer Spectrophotometer (MK-IV) for the period 2004~2010. The analysis was also carried out together with the broadband total (global) solar irradiance (TR ; 305~2800 nm) and cloud amount to compare with the UV variations, measured by Seoul meteorological station of Korean Meteorological Agency located near the present study site. Under all-sky conditions, the day-to-day variability of EUV exhibits annual mean of 98% in increase and 31% in decrease. It has been also shown that the EUV variability is 17 times as high as the total ozone in positive change, whereas this is 6 times higher in negative change. Thus, the day to day variability is dominantly caused rather by the daily synoptic situations than by the ozone variability. Annual mean value of daily EUV and TUV shows $1.62kJm^{-2}$ and $0.63MJm^{-2}$ respectively, whereas mean value of TR is $12.4MJm^{-2}$ ($143.1Wm^{-2}$). The yearly maximum in noon-time UV Index (UVI) varies between 9 and 11 depending on time of year. The highest UVI shows 11 on 20 July, 2008 during the period 2004~2010, but for the period 1994~2000, the index of 12 was recorded on 13 July, 1994 (Cho et al., 2001). A 40% of daily maximum UVI belongs to "low (UVI < 2)", whereas the UVI less than 5% of the maximum show "very high (8 < UVI < 10)". On average, the maximum UVI exceeded 8 on 9 days per year. The values of Tropospheric Emission Monitoring Internet Service (TEMIS) EUV and UVI under cloud-free conditions are 1.8 times and 1.5 times, respectively, higher than the all-sky measurements by the Brewer. The trend analysis in fractional deviation of monthly UV from the reference value shows a decrease of -0.83% and -0.90% $decade^{-1}$ in the EUV and TUV, respectively, whereas the TR trend is near zero (+0.11% $decade^{-1}$). The trend is statistically significant except for TR trend (p = 0.279). It is possible that the recent UV decrease is mainly associated with increase in total ozone, but the trend in TR can be attributed to the other parameters such as clouds except the ozone. Certainly, the cloud effects suggest that the reason for the differences between UV and TR trends can be explained. In order to estimate cloud effects, the EUV, TUV and TR irradiances have been also evaluated for clear skies (cloud cover < 25%) and cloudy skies (cloud cover ${\geq}$ 75%). Annual mean values show that EUV, TUV and TR are $2.15kJm^{-2}$, $0.83MJm^{-2}$, and $17.9MJm^{-2}$ for clear skies, and $1.24kJm^{-2}$, $0.46MJm^{-2}$, and $7.2MJm^{-2}$ for cloudy skies, respectively. As results, the transmission of radiation through clouds under cloudy-sky conditions is observed to be 58%, 55% and 40% for EUV, TUV and TR, respectively. Consequently, it is clear that the cloud effects on EUV and TUV are 18% and 15%, respectively lower than the effects on TR under cloudy-sky conditions. Clouds under all-sky conditions (average of cloud cover is 5 tenths) reduced the EUV and TUV to about 25% of the clear-sky (cloud cover < 25%) values, whereas for TR, this was 31%. As a result, it is noted that the UV radiation is attenuated less than TR by clouds under all weather conditions.