• Journal of the Korean Crystal Growth and Crystal Technology
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• v.11 no.2
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• pp.71-77
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• 2001

We investigated photoluminescence, long-phosphorescent and crystalline properties with various $Dy_2$$O_3$ compositions (0.0~9.5mol%) in $SrAl_2$$O_4$ : $Eu^{2+}$,$Dy^{3+}$ phosphor powders prepared by the solid state reaction. The highest emission wavelength (520nm) of photoluminescence spectra was not affected by the Dy doping concentrations. The$SrAl_2$$O_4$single phase which was determined by X-ray diffraction and photoluminescence was appeared for the concentrations of $Dy_2$$O_3$$\leq$1.0 mol%. After removal of the pulsed Xe-lamp excitation (360nm), also, excellent long phosphorescent properties of the phosphors were obtained with the concentrations of $Dy_2$$O_3$$\leq$1.0mol%, although the decay time for all phosphors decrease exponentially.

• Journal of Korean Ophthalmic Optics Society
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• v.11 no.3
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• pp.165-172
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• 2006

On the MgO single crystals doped artificially with Cr, Cu, Fe we observed thermally stimulated luminescence(TSL) glow curves and spectra, and analyzed them in the temperatures range from at liquid nitrogen temperature(77K) to about 500K after excitation with UV or X-ray irradiation. TSL glow curves obtained from these samples show five peaks at 136.5K, 223.5K, 360K, 390K, 440K, and their estimated activation energies are 0.27eV, 0.63eV, 1.08eV, 1.08eV, 1.19eV, and 1.33eV, respectively. When we measured TSL spectrum at the range of 200nm to 650nm on the MgO single crystals. we also analyzed the peak wavelength which obtained at 345nm, 375nm, and 410nm from measurement of TSL spectrum and described their luminescence mechanisms. TSL spectrum peaks emitted from MgO:Cr, MgO:Cu, and MgO:Fe appear at the wavelengths of 345nm, 360nm, and 375nm, respectively.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.434-434
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• 2012

Despite recent efforts for fabricating flexible transparent conducting films (TCFs) with low resistance and high transmittance, several obstacles to meet the requirement of flexible displays still remain. Indium tin oxide (ITO) thin films, which have been traditionally used as the TCFs, have a serious obstacle in TCFs applications. SWNTs are the most appropriate materials for conductive films for displays due to their excellent high mechanical strength and electrical conductivity. Recently, it has been demonstrated that acid treatment is an efficient method for surfactant removal. However, the treatment has been reported to destroy most SWNT. In this work, the fabrication by the spraying process of transparent SWNT films and reduction of its sheet resistance by Au-ionic doping treatment on PET substrates is researched. Arc-discharge SWNTs were dispersed in deionized water by adding sodium dodecyl sulfate (SDS) as surfactant and sonicated, followed by the centrifugation. The dispersed SWNT was spray-coated on PET substrate and dried on a hotplate. When the spray process was terminated, the TCF was immersed into deionized water to remove the surfactant and then it was dried on hotplate. The TCF film was then was doped with Au-ionic doping treatment, rinsed with deionized water and dried. The surface morphology of TCF was characterized by field emission scanning electron microscopy. The sheet resistance and optical transmission properties of the TCF were measured with a four-point probe method and a UV-visible spectrometry, respectively. This was confirmed and discussed on the XPS and UPS studies. We show that 87 ${\Omega}/{\Box}$ sheet resistances with 81% transmittance at the wavelength of 550 nm. The changes in electrical and optical conductivity of SWNT film before and after Au-ionic doping treatments were discussed. The effects of hole transport interface layer using Au-ionic doping SWNT on the performance of organic solar cells were investigated.

• Publications of The Korean Astronomical Society
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• v.27 no.4
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• pp.297-298
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• 2012

ANIR (Atacama Near InfraRed camera) is a near infrared camera for the University of Tokyo Atacama 1m telescope, installed at the summit of Co. Chajnantor (5,640 m altitude) in northern Chile. The high altitude and extremely low water vapor (PWV = 0.5 mm) of the site enable us to perform observation of hydrogen $Pa{\alpha}$ emission line at $1.8751{\mu}m$. Since its first light observation in June 2009, we have been carrying out a $Pa{\alpha}$ narrow-band imaging survey of nearby luminous infrared galaxies (LIRGs), and have obtained $Pa{\alpha}$ for 38 nearby LIRGs listed in AKARI/FIS-PSC at the velocity of recession between 2,800 km/s and 8,100 km/s. LIRGs are affected by a large amount of dust extinction ($A_V$~ 3 mag), produced by their active star formation activities. Because $Pa{\alpha}$ is the strongest hydrogen recombination line in the infrared wavelength ranges, it is a good and direct tracer of dust-enshrouded star forming regions, and enables us to probe the star formation activities in LIRGs. We find that LIRGs have two star-forming modes. The origin of the two modes probably come from differences between merging stage and/or star-forming process.

• Journal of the Microelectronics and Packaging Society
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• v.6 no.1
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• pp.1-10
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• 1999

InGaP epilayers were grown on the flat, $2^{\circ}$off, $6^{\circ}$ off, and $10^{\circ}$off GaAs substrates by organo-metallic vapor phase epitaxy, and influences of crystallographic misorientation of the substrate on the structural and optical properties such as lattice mismatch, elastic strain, lattice curvature, misfit stress, and PL intensity /line-width were investigated in this study. Material characterizations were carried out by TXRD( tripple-axis x-ray diffractometer) and low temperature (11K) PL (photoluminescence). With increase of the substrate misorientation angle (S.M.A.), the relative incorporation of Ga atoms on the substrate surface was found to be enhanced. Also, with increase of the S. M. A., the x-ray line-width of the InGaP epilayer was reduced, indicating that the crystal quality of the epilayer could be improved tilth a misoriented substrate. It was also found that the elastic accommodation of the strain-free lattice misfit was more remarkable in a misoriented sample. PL intensity increased, and PL line-width and emission wavelength decreased with the increase of S. M. A. The results conclude that the elastic characteristics and the crystal quality of the InGaP epilayer could be remarkably enhanced when the misoriented substrates were employed.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.279.2-279.2
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• 2016

InGaN/GaN multiple quantum wells (MQWs) have been attracted much attention as light-emitting diodes (LEDs) in the visible and UV regions. Particularly, quantum efficiency of green LEDs is decreased dramatically as approaching to the green wavelength (~500 nm). This low efficiency has been explained by quantum confined Stark effect (QCSE) induced by piezoelectric field caused from a large lattice mismatch between InGaN and GaN. To improve the quantum efficiency of green LED, several ways including epitaxial lateral overgrowth that reduces differences of lattice constant between GaN and sapphire substrates, and non-polar method that uses non- or semi-polar substrates to reduce QCSE were proposed. In this study, graded short-period InGaN/GaN superlattice (GSL) was grown below the 5-period InGaN/GaN MQWs. InGaN/GaN MQWs were grown on the patterned sapphire substrates by vertical-metal-organic chemical-vapor deposition system. Five-period InGaN/GaN MQWs without GSL structure (C-LED) were also grown to compare with an InGaN/GaN GSL sample. The luminescence properties of green InGaN/GaN LEDs have been investigated by using photoluminescence (PL) and time-resolved PL (TRPL) measurements. The PL intensities of the GSL sample measured at 10 and 300 K increase about 1.2 and 2 times, respectively, compared to those of the C-LED sample. Furthermore, the PL decay of the GSL sample measured at 10 and 300 K becomes faster and slower than that of the C-LED sample, respectively. By inserting the GSL structures, the difference of lattice constant between GaN and sapphire substrates is reduced, resulting that the overlap between electron and hole wave functions is increased due to the reduced piezoelectric field and the reduction in dislocation density. As a results, the GSL sample exhibits the increased PL intensity and faster PL decay compared with those for the C-LED sample. These PL and TRPL results indicate that the green emission of InGaN/GaN LEDs can be improved by inserting the GSL structures.

• Journal of the Korean Vacuum Society
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• v.18 no.6
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• pp.474-480
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• 2009

We have investigated optical properties of InAs quantum dots (QDs) grown on GaAs (100) substrate by molecular beam epitaxy, by means of photoluminescence (PL) and time-resolved PL spectroscopy. InAs QDs were grown by using In interruption growth technique, in which the In flux was periodically interrupted by a closed In shutter during InAs QDs growth. The shutter of In source was opened for 1 s and then closed for 0, 9, 19, 29, or 39 s. This growth sequence was repeated 30 times during QDs growth. For each sample, the total amount of In contributing to the growth was the same (30 s) but total growth time was varied during the InAs growth. As the In interruption time is increased from 0 to 19 s, the PL peak position of the QDs is red-shifted from 1096 to 1198 nm, and the PL intensity is increased. However, the PL peak is unchanged and the intensity is decreased as the In interruption time is increased further to 39 s. The PL decay times measured at the PL peak position for all the InAs QDs are independent on the QD growth conditions and showed about 1 ns. The red-shift of PL peak and the increase of PL intensity can be explained due to increased QD size and the enhancement in the migration of In atoms using In interruption technique. These results indicated that the size and shape of InAs QDs can be controlled by using In interruption growth technique. Thus the emission wavelength of the InAs QDs on GaAs substrate can also be controlled.

• Journal of Astronomy and Space Sciences
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• v.21 no.4
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• pp.391-398
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• 2004

Far-ultraviolet Imaging Spectrograph (FIMS) is the main payload of the Korea's first scientific micro satellite STSAT-1, which was launched at Sep. 27 2003 successfully. Major objective of FIMS is observing hot gas in the Galaxy in FUV bands to diagnose the energy flow models of the interstellar medium. Supernova remnants, molecular clouds, and Aurora emission in the geomagnetic pole regions are specific targets for pointing observation. Although the whole system was calibrated before launch, it is essential to perform on-orbit calibration for data analysis. For spectral calibration, we observed airglow lines in the atmosphere since they provide good spectral references. We identify and compare the observed airglow lines with model calculations, and correct the spectral distortion appeared in the detector system to improve the spectral resolution of the system.

• Journal of Pharmaceutical Investigation
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• v.35 no.6
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• pp.437-443
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• 2005

A rapid, selective and sensitive reversed-phase HPLC method for the determination of a major metabolite of terfenadine, fexofenadine, in human serum was developed, validated, and applied to the pharmacokinetic study of terfenadine. Fexofenadine and internal standard, haloperidol were extracted from human serum by liquid-liquid extraction with acetonitrile and analyzed on a $Symmetry^{TM}$ C8 column with the mobile phase of 1% triethylamine phosphate (pH 3.7)-acetonitrile (67:33, v/v, adjusted to pH 5.6 with triethylamine). Detection wavelength of 230 nm for excitation, 280 nm for emission and flow rate of 1.0 mL/min were fixed for the study. The assay robustness for the changes of mobile phase pH, organic solvent content, and flow rate was confirmed by $3^{3}$ factorial design using a fixed fexofenadine concentration (50 ng/mL) with respect to its peak area and retention time. In addition, the ruggedness of this method was investigated at three different laboratories using same quality control (QC) samples. This method showed linear response over the concentration range of 10-500 ng/mL with correlation coefficients greater than 0.999. The lower limit of quantification using 0.5 mL of serum was 10 ng/mL, which was sensitive enough for the pharmacokinetic studies of terfenadine. The overall accuracy of the quality control samples ranged from 95.70 to 114.58% for fexofenadine with overall precision (% C.V.) being 3.53-14.39%. The relative mean recovery of fexofenadine for human serum was 90.17%. Stability studies (freeze-thaw, short-term, extracted serum sample and stock solution) showed that fexofenadine was stable during storage, or during the assay procedure in human serum. However, the storage at $-70^{\circ}C$ for 4 weeks showed that fexofenadine was not stable. The peak area and retention time of fexofenadine were not significantly affected by the changes of mobile phase pH, organic solvent content, and flow rate under the conditions studied. This method showed good ruggedness (within 15% C.V.) and was successfully used for the analysis of fexofenadine in human serum samples for the pharmacokinetic studies of orally administered Tafedine tablet (60 mg as terfenadine) at three different laboratories, demonstrating the suitability of the method.

• Analytical Science and Technology
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• v.13 no.3
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• pp.309-314
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• 2000

The quantitative analysis of various trace metals including fission products in lithium molten salts has been performed using a inductively coupled plasma atomic emission spectrometer (ICP-AES). The spectral interferences of lithium content, 500, 1,000 and 2,000 mg/L, in the sample solution were investigated using an optimum wavelength for the respective metal species. As a result, the line intensities for Y, Nd, Sr, and La had no influences from the lithium content up to 2,000 mg/L, while Mo, Ba, Ru, Pd, Rh, Zr and Ce showed spectral interferences of 10% to 50%. The group separation of metals from lithium in the molten salts solution was carried out by adding ammonia water into the solution. The recovery of Ru, Y, Rh, Zr, Nd, Ce, La and Eu was found to be over 90%, while Mo, Ba, Pd, and Sr provided low recovery percentages.