• Journal of the Korean Chemical Society
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• v.44 no.4
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• pp.350-355
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• 2000

The compounds, CaAl$_2$(BO$_3$)$_2$O, SrAl$_2$(BO$_3$)$_2$O and BaAl$_2$(BO$_3$)$_2$O, are good host lattices for highly efficient $Eu^{2+}$ luminescence. The europium emission peaks at 450 nm in $Eu^{2+}$:CaAl$_2$(B0$_3$)$_2$O, 411 nm in $Eu^{2+}$: SrAl$_2$(BO$_3$)$_2$O and 375 nm in $Eu^{2+}$: BaAl$_2$(BO$_3$)$_2$O. The $Eu^{2+}$: CaAl$_2$(BO$_3$)$_2$O Phosphor shows a high output and should be a good maintenance in VUV Xe lamps. It is ideally suited for use in PDP phosphors. The $Eu^{2+}$ ion is interesting because the Stokes shift emission is a strong host dependent. The difference in the Stokes shift is oneimportant factor leadingto a difference in wavelength. If the 5d level of $Eu^{2+}$ ion is lower in energy,according to a decrease in the doping lattice size, then the emission wavelength will be longer and the Stokes shift will be smaller. Therefore, a knowledge of the relationship between the crystal lattice size and the Stokes shift. (orthe energy of the 5d level),is essential for beingable to predict $Eu^{2+}$ emission properties.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.6
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• pp.597-600
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• 1999

By periodically varying the current density and etching time during anodic oxidation of crustalline silicon wafers in 15% HF-ethanol solution, we obtained porous silicon multilayers which have periodically varying refractive index. We fabricated the porous silicon microcavity (PSM) which consist of porous silicon multilayers (I), active layer of porous silicon, and porous silicon multilayers (II) and investigated its physical properties. The AFM (Atomic Force Microscope) measurement from the cross section of multilayers (I and II) shows uniformity of high refractive index and low index layers as well as the active layer. We observed the characteristics of Bragg reflector when the thickness of layers was 1/4 and the thickness of active layer was twice of the effective wavelength, which can be used as a filter for specific wavelength. We found the emission characteristic from the PSM, which FWHM (full width half maximum) was considerably decreased and emission intensity was increased.

• Journal of the Korean Ceramic Society
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• v.45 no.8
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• pp.477-481
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• 2008

$Eu^{2+}$ and $Dy^{3+}$ co-doped strontium aluminate, $SrAl_2O_4$ long phosphorescent phoshor was fabricated and its photoluminescence was characterized. The phosphor, $SrAl_2O_4:Eu^{2+},Dy^{3+}$ was synthesized by a coprecipitation in which metal salts of $Sr(NO_3)_2$, $Al(NO_3)_3{\cdot}9H_2O$, were dissolved in $(NH_4)_2CO_3$ solution with adding $Eu(NO_3)_3{\cdot}5H_2O$ and $Dy(NO_3)_3{\cdot}5H_2O$ as a activator and co-activator, respectively. The coprecipitated products were separated from solution, washed, and dried in a vacuum dry oven. The dried powders were then mixed with 3 wt% $B_2O_3$ as a flux and heated at $800{\sim}1400^{\circ}C$ for 3 h under the reducing ambient atmosphere of 95%Ar+$5%H_2$ gases. For the synthesized $SrAl_2O_4:Eu^{2+},Dy^{3+}$, properties of photoluminescence such as emission, excitation and decay time were examined. The emission intensity increased as the annealing temperature increased and showed a maximum peak intensity at 510 nm with a broad band from $400{\sim}650\;nm$. Monitored at 520 nm, the excitation spectrum showed a maximum peak intensity at $315{\sim}320\;nm$ wavelength with a broad band from $200{\sim}500\;nm$ wavelength. The decay time of $SrAl_2O_4:Eu^{2+},Dy^{3+}$ increased as the annealing temperature increased.

• The Bulletin of The Korean Astronomical Society
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• v.40 no.2
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• pp.36.2-36.2
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• 2015

We report the first detection of linearly polarized emission at an observing wavelength of 350 mum from the radio-loud active galactic nucleus 3C 279. We conducted polarization observations for 3C 279 using the SHARP polarimeter in the Caltech Submillimeter Observatory on 2014 March 13 and 14. For the first time, we detected the linear polarization with the degree of polarization of $13.3%{\pm}3.4%$ (3.9sigma) and the electric vector position angle (EVPA) of $34.^{\circ}7{\pm}5.^{\circ}6$. We also observed 3C 279 simultaneously at 13, 7, and 3.5 mm in dual polarization with the Korean very long baseline interferometry (VLBI) Network on 2014 March 6 (single dish) and imaged in milliarcsecond (mas) scales at 13, 7, 3.5, and 2.3 mm on March 22 (VLBI). We found that the degree of linear polarization increases from 10% to 13% at 13 mm to 350 mum and the EVPAs at all observing frequencies are parallel within < $10^{\circ}$ to the direction of the jet at mas scale, implying that the integrated magnetic fields are perpendicular to the jet in the innermost regions. We also found that the Faraday rotation measures RM are in a range of $-6.5{\times}102{\sim}-2.7{\times}103$ rad m-2 between 13 and 3.5 mm, and are scaled as a function of wavelength:| {RM}| ${\backslash}propto$ {lambda }-2.2. These results indicate that the millimeter and sub-millimeter polarization emission are generated in the compact jet within 1 mas scale and affected by a Faraday screen in or in the close proximity of the jet.

• Transactions on Electrical and Electronic Materials
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• v.8 no.6
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• pp.255-259
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• 2007

We have synthesized $CaS:Eu^{2+}$ phosphor by using a sealing vessel and evaluated its photoluminescence properties. The method using a sealing vessel is simple and economical in comparison with other methods reported up to date. As an activator concentration was increased from 0.1 mol% to 4 mol%, the main emission wavelength of the phosphor was increased from 642 nm to 651 nm due to the crystal field splitting of 5d levels of $Eu^{2+}$ ion. Although the same amount of $Eu_2O_3$ was used, the concentration of the activator ions, which were reduced from $Eu^{3+}\;to\;Eu^{2+}$ and substituted $Ca^{2+}$ ions, was increased with increase of firing temperature. Therefore, the main emission wavelength was also. shifted from 645 nm to 651 nm with increase of firing temperature from $1100^{\circ}C\;to\;1300^{\circ}C$. The critical distance($R_{c1}=20.65\;{\AA}$) between $Eu^{2+}$ ions calculated from the critical concentration was well matched with that($R_{c2}=19.17\;{\AA}$) calculated from the Dexter formula.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.118-119
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• 2013

High power, short wavelength red laser diodes (LDs) have attracted significant interests in a variety of fields due to their advantages in terms of reliability, compactness and cost. The higher brightness for human eyes is required, the shorter wavelength like 630 nm is necessary with higher output power. In this respect, LDs are promising as alternative candidates of gas or dye lasers for such applications due to their small size, high optical/electrical power conversion efficiency, robustness and so on. The crystalline quality of GaInP-AlGaInP multiple quantum wells (MQWs) and AlInP cladding layers is a crucial part in the device performance of GaInP red LDs. Here, we first investigated the effect of Si diffusion on the optical properties of GaInP-AlGaInP MQWs grown with different growth temperatures. Secondary ion mass spectroscopy (SIMS) measurements revealed that both the Mg and Si diffusion into MQW active region was significant. To reduce such diffusion, we employed undoped Mg and Si diffusion barrier and could improve the properties.Without both Mg and Si diffusion barriers, no lasing emission was observed. However, lasing emission was observed clearly for the red LDs with both Mg and Si diffusion barriers. We then investigated the temperature dependent optical properties of MQW layers grown with different well thicknesses (6, 8 and 10 nm). When the well thickness was 10 nm, the better crystalline quality was obtained. However, the observed LD performances were similar, probably due to the defects and impurities in the AlGaInP layer. Further investigation with the detailed analyses will be presented later.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.307-308
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• 2006

We have synthesized $CaS:Eu^{2+}$ phosphor by using a sealing vessel and evaluated its photoluminescence properties. The method using a sealing vessel is simple and economical in comparison with other methods reported up to date, As an activator concentration was increased from 0.1 mol to 4 mol, the main emission wavelength of the phosphor was increased from 642 nm to 651 nm due to crystal field splitting of 5d level of $Eu^{2+}$ ions. Although the same amount of $Eu_2O_3$ was used, the concentration of the activator ions which were reduced from $Eu^{3+}$ to $Eu^{2+}$ and substituting $Ca^{2+}$ ions was increased with increase of firing temperature. Therefore, the main emission wavelength was also increased from 645 nm to 651 nm with increase of firing temperature from $1100^{\circ}C$ to $1300^{\circ}C$.

• Journal of the Korean Ceramic Society
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• v.40 no.7
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• pp.709-714
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• 2003

Eu doped $Y_2$ $O_3$ nanoparticles were prepared with the solvothermal synthesis using the ethyleneglycol solvent at 20$0^{\circ}C$ for 3-5 h and then annealed in air at 1000-140$0^{\circ}C$ for 2-4 h. The X-ray diffraction pattern of annealed crystals at 100$0^{\circ}C$ for 2 h could be indexed as pure cubic cell of $Y_2$ $O_3$ phase with lattice parameters a=10.5856 $\AA$ which is very close to the reported data (JCPDS Card File, 41-1105 a=10.6041 $\AA$). Average size of prepared phosphor particles have about 100 nm, which were spherical morphology. The phosphor particle sizes decreased and the emission intensity increased at the annealing temperature. Though PL spectrum analysis, the 3% Eu doped $Y_{2-x}$ $O_3$:E $u_{x}$ $^{3+}$(x=0.06) phosphor showed the excitation spectrum at 250 nm wavelength and the maximum emission spectrum at 611 nm wavelength.

• Korean Journal of Materials Research
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• v.15 no.8
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• pp.543-547
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• 2005

Organic electroluminescence devices were made from 1,4-bis-(9-anthrylvinyl)benzene (AVB) and 1,4-bis-(9-aminoanthryl)benzene (AAB) anthracene derivatives. Device structure was ITO/AVB/PANI(EB)/Al (multi-layer device) and ITO/AAB:DCM/Al(single-layer device). In these devices, AVB, polyaniline(emeraldine base) (PANI(EB)) and AAB were used as the emitting material. 4-(dicyanomethylene)-2-methyl-6-p-(dimethylamino)styryl-4H -pyran(DCM) was used as red fluorescent dopant. We studied change of fluorescence wavelength with concentration of DCM doped in AAB. The ionization potential (IP) and optical band gap (Eg) were measured by cyclic voltammetry and UV-visible spectrum. We compared with difference of emitting wavelength between photoluminescence and electroluminescence spectrum. In case of the multi-layer device, PANI and AVB EL spectra have similar wave pattern to each PL spectrum and when PAM and AVB were used at the same time, and multi-layer device showed that a balanced recombination and radiation kom PANI and AVB. In case of the single-layer device, with the increase of DCM concentration, the blue emission decreases and red emission increases. This indicates that DCM was excited by the energy transfer from AAB to DCM or the direct recombination at the dopant sites due to carrier trapping, or both. The device with $1.0wt\%$ DCM concentration gave white light.

• Korean Journal of Optics and Photonics
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• v.11 no.1
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• pp.37-42
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• 2000

We have numerically solved rate-equations of semiconductor optical amplifier (SOA) to understand the characteristics of SOA. The rate-equations we have used can describe injection carrier density, amplified spontaneous emission and signal photon density in spatial and time domain by dividing the cavity into multi-section. We have investigated injection carrier density, amplified spontaneous emission and signal photon density as a function of position and time in the case of single channel input in the form of square pulse. Also we have analyzed the non-linear phenomena of SOA in the case of injecting multi-channel wavelengths as in WDM. Intermodulation distortion (IMD) caused by beat among channels has significant effects on the signal distortion as the channel spacing becomes narrower, and channel crosstalk becomes larger as the power of signals increases. In the case of the injection of another CW laser whose wavelength is far enough from the signal wavelengths, the crosstalk and the output signal distortion can be significantly reduced. duced.