• Journal of the Korean Magnetics Society
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• v.15 no.1
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• pp.30-36
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• 2005

Recently, It has been reported that the spin sprayed ferite film shows better magnetic properties at high frequeny that the ferrite by co-firing over $800^{\circ}C$ . Besides, there is no limitation to select the substrate materials because it can be processed with relatively low temperature below $100^{\circ}C$. Therefore, we fabricated film inductor as a passive device for DC-DC converter by a use of spin sprayed embedded form was completed by via hole process of pad opening. Saturation magnetization of 0.61 T and real part of permeability of 110 were obtained in Ni-Zn ferrite. In addition, inductance of 1.52 ${\mu}H$, quality factor of 24.3 at 5 MHz were measured with spiral 16 turn inductor. The rated current of inductor was 863 mA.

• Journal of Electrical Engineering and Technology
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• v.11 no.1
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• pp.175-183
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• 2016

This paper brings out a novel method for reducing Near end and Far end Crosstalk using Electromagnetic Band Gap structures (EBG) in High Speed RF transmission lines. This work becomes useful in high speed closely spaced Printed Circuit Board (PCB) traces connected to multi core processors. By using this method, reduction of −40dB in Near-End Crosstalk (NEXT) and −60 dB in Far End Crosstalk (FEXT) is achieved. The results are validated through experimental measurements. Time domain analysis is performed to validate the signal integrity property of coupled transmission lines.

• Journal of Electrical Engineering and Technology
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• v.10 no.3
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• pp.1154-1161
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• 2015

This paper presents a semi-lumped balun transformer using conventional PCB process and its design theory and geometry for the maximally flat response and wide bandwidth using magnetically coupled LC resonators. The proposed balun is comprised of two pairs of coupled resonators which share one among three LC resonators. It provides an identical magnitude and phase difference of 180° between two balanced ports with DC isolation and an impedance transformation characteristic. Theoretical design and analysis were performed to optimize the inductance and capacitance values of proposed balun device for obtaining the wide bandwidth and maximally flat response in its pass-band. Three balun transformers with a center frequency of 500 MHz were demonstrated for proving the concept of design proposed. They were fabricated by using lumped chip capacitors and planar inductors embedded into a conventional 4-layered PCB substrate. They exhibited a maximum magnitude difference of 0.8 dB and phase difference within 2.4 degrees.

• Proceedings of the KIEE Conference
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• 2007.07a
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• pp.260-261
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• 2007

본 논문에서는 800MHz와 1.9GHz 대역의 시스템에 적용할 수 있는 20dB 방향성 결합기를 8층 PCB 기판에 내장하여 소형화 및 저가화 할 수 있도록 설계하였다. 방향성 결합기는 4층과 6층에 coupled line으로 적층함으로써, 다층 PCB기판을 최대한 활용하여 공간을 최소화하였다. 또한, 고유전율을 가진 필름을 이용하여, coupled line의 끝에 내장형 고용량 커패시터를 연결하여 설계하였다. 6 $\times$ 6 $\times$ 0.7 (height)$mm^3$ 크기로 설계된 방향성 800MHz 결합기의 경우 -20dB의 coupling 특성, -0.6dB의 transmission 특성, -25dB의 isolation 특성을 나타내었다. 패키징 기판에 내장된 방향성 결합기는 단말기 및 통신시스템의 소형화에 크게 기여할 수 있을 것이다.

• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.1929_1930
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• 2009

Fully embedded tunable bandpass filter (BPF) with inductive coupling circuits is newly designed and demonstrated for UHF TV tuner ranged from 500MHz to 900MHz receivers. Conventional RF tuning circuit with an electromagnetic coupled tunable filter has several problems such as large size, high volume, and high cost, since the electromagnetic coupled filter is comprised of several passive components and air core inductors to be assembled and controlled manually. To address these obstacles, compact tunable filter with inductive coupling circuit was embedded into low cost organic package substrate. The embedded filter was optimally designed to have high performance by using high Q spiral stacked inductors, high dielectric $BaTiO_3$ composite MIM capacitors, varactor diodes. It exhibited low insertion loss of approximately -2dB, high return loss of below -10dB, and large tuning range of 56.3%. It has an extremely compact size of $3.4{\times}4.4{\times}0.5mm^3$.

• Korean Journal of Materials Research
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• v.17 no.2
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• pp.81-85
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• 2007

Embedded capacitor technology can improve electrical perfomance and reduce assembly cost compared with traditional discrete capacitor technology. To improve the capacitance density of the $Al_2O_3$ based embedded capacitor on Cu cladded fiber reinforced plastics (FR-4), the specific surface area of the $Al_2O_3$ thin films was enlarged and their surface morphologies were controlled by anodization process parameters. From I-V characteristics, it was found that breakdown voltage and leakage current were 23 V and $1{\times}10^{-6}A/cm^2$ at 3.3 V, respectively. We have also measured C-V characteristics of $Pt/Al_2O_3/Al/Ti$ structure on CU/FR4. The capacitance density was $300nF/cm^2$ and the dielectric loss was 0.04. This nano-porous $Al_2O_3$ is a good material candidate for the embedded capacitor application for electronic products.

• Proceedings of the KIEE Conference
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• 2006.07c
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• pp.1587-1588
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• 2006

Tn this paper, PCB (Printed Circuit Board) embedded $BaTiO_3$ MIM capacitors were designed, fabricated, and characterized for low cost organic SOP applications by using 3-D EM simulator and low temperature processes. Size of electrodes and thickness of high dielectric films are optimized for improving the performance characteristics of the proposed embedded MIM capacitors at high frequency regime. The selected thicknesses of the $BaTiO_3$ film are $12{\mu}m$, $16{\mu}m$, and $20{\mu}m$. The fabricated MIM capacitor with dielectric constant of 30 and thickness of $12{\mu}m$ has capacitance density of $21.5p\;F/mm^2$ at 100MHz, maximum quality factor of 37.4 at 300 MHz, a quality factor of 30.9 at 1GHz, self resonant frequency of 5.4 GHz, respectively. The measured capacitances and quality factors are well matched with 3-D EM simulated ones. These embedded capacitors are promising for SOP based advanced electronic systems with various functionality, low cost, small size and volume.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.4
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• pp.342-347
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• 2007

$Bi_6Mg_2Nb_4O_{21}(BMN)$ thin films were deposited at various substrates by sputtering system for embedded capacitor applications. BMN thin films deposited at room temperature are manufactured as MIM(Metal/Insulator/Metal) structures. Dielectric properties and leakage current density were investigated as a function of various substrates and thickness of BMN thin films. Leakage current density of BMN thin films deposited on CCL(Copper Clad Laminates) showed relatively high value ($1{\times}10^{-3}A/cm^2$) at an applied field of 300 kV/cm on substrates, possibly due to relatively high value of roughness(rms $50{\AA}$) of CCL substrates. 100 nm-thick BMN thin films deposited on Cu/Ti/Si substrates showed the capacitance density of $300 nF/cm^2$, a dielectric constant of 32, a dielectric loss of 2 % at 100 kHz and the leakage current density of $1{\times}10^{-6}A/cm^2$ at an applied field of 300 kV/cm. BMN capacitors are expected to be promising candidates as embedded capacitors for printed circuit board(PCB).

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.15 no.1
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• pp.73-80
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• 2004

In this paper, the implementation and embedding method of the existing air-filled waveguide-filters at millimeter-wave on general PCB substrate is introduced by systematically inserting the vias inside waveguide and mathematically manipulating the simple equations obtained ken the classical circular-post waveguide filter design. All the metal structures placed vertically such as side wall fur perfect ground plane and circular-post for signal control in the air-filled WR-22 waveguide are replaced with several types of via for constructing the bandpass-filter. Side wall and poles inside waveguide are realized by placing a series array of via and tuning the via diameter. The lengths of x, y, z axis are reduced in proportion to root square of employed substrate dielectric constant and especially the length of z axis can be more reduced due to the characteristics of the wave propagation. Because the mass production on PCB is possible without fabricating a large-scaled metal waveguide of WR-22 as input/output ports at millimeter-wave regime, the manufacturing cost is reduced considerably. Finally, when using multilayer process like LTCC for small-sized module, it is one of advantages to use only one layer f3r the filter fabrication. To evaluate the validity of this novel technique, order-3 Chebyshev BPF(Bandpass-Filter) centered at 40 GHz-band with a 2.5 ％ FBW (Fractional Bandwidth) were used. The employed substrate has relative dielectric constant of 2.2 and thickness of 10 mil of Rogers RT/Duroid 5880. Accroding to design and measurement results, a good performance of insertion loss of 2 ㏈ and return loss of -30 ㏈ is achieved at full input/output ports.

• Proceedings of the KAIS Fall Conference
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• 2008.11a
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• pp.60-62
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• 2008

본 논문에서는 PCB(Printed Circuit Board) 기판의 내부에 만들어지는 임베디드 캐패시터에서 정전용량 밀도를 높이고 고주파 특성을 향상시키기 위한 방안을 연구하였다. 전극의 형태 및 유전체와의 적층구조를 변형하면서 임베디드 캐패시터의 특성변화를 분석하였으며, 이를 통하여 정전용량 밀도 및 고주파 특성을 개선할 수 있었다.