• Transactions on Electrical and Electronic Materials
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• 제13권3호
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• pp.162-164
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• 2012

In this study, we fabricate Pt nanoparticle (NP)-embedded MOS capacitors at room temperature and investigate their memory characteristics. The Pt NPs are separated from each other and situated between the tunnel and control oxide layers. The average size and density of the Pt NPs are 4 nm and $3.2{\times}10^{12}cm^{-2}$, respectively. Counterclockwise hysteresis with a width of 3.3 V is observed in the high-frequency capacitance-voltage curve of the Pt NP-embedded MOS capacitor. Moreover, more than 93% of the charge remains even after $10^4$ s.

• 한국전기전자재료학회논문지
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• 제21권8호
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• pp.699-705
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• 2008

Capacitance versus voltage (C-V) characteristics of Ge-nanocrystal (NC)-embedded metal-oxide-semiconductor (MOS) capacitors with $HfO_2$ gate material were investigated in this work. The current versus voltage (I-V) curves obtained from Ge-NC-embedded MOS capacitors fabricated with the $NH_3$ annealed $HfO_2$ gate material reveal the reduction of leakage current, compared with those of MOS capacitors fabricated with the $O_2$ annealed $HfO_2$ gate material. The C-V curves of the Ge-NC-embedded MOS capacitor with $HfO_2$ gate material annealed in $NH_3$ ambient exhibit counterclockwise hysteresis loop of about 3.45 V memory window when bias voltage was varied from -10 to + 10 V. The observed hysteresis loop indicates the presence of charge storages in the Ge NCs caused by the Fowler-Nordheim (F-N) tunneling. In addition, capacitance versus time characteristics of Ge-NC-embedded MOS capacitors with $HfO_2$ gate material were analyzed to investigate their retention property.

• 한국태양에너지학회 논문집
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• 제32권spc3호
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• pp.235-244
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• 2012

This paper presents a design and simulation of bi-directional DC/DC boost converter for a fuel cell system. In this paper, we analyze the equivalent model of both a boost converter and a buck converter. Also we propose the controller of bi-directional DC-DC converter, which has buck mode of charging a capacitor and boost mode of discharging a capacitor. In order to design a controller, we draw bode plots of the control-to-output transfer function using specific parameters and incorporate proper compensator in a closed loop. As a result, it has increased PM(Phase Margin) for better dynamic performance. The proposed bi-directional DC-DC converter's 3pole-2zero compensation method has been verified with computer simulation and simulation results obtained demonstrates the validity of the proposed control scheme.

• 마이크로전자및패키징학회지
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• 제15권1호
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• pp.39-44
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• 2008

In this paper, fully embedded 2.4GHz WLAN band pass filter (BPF) was investigated into a multi-layered organic packaging substrate using high Q spiral stacked inductors and high Dk MIM capacitors for low cost RF System on Package (SOP) applications. The proposed 2.4GHz WLAN BPF was designed by modifying chebyshev second order filter circuit topology. It was comprised of two parallel LC resonators for obtaining two transmission zeros. It was designed by using 2D circuit and 3D EM simulators for finding out optimal geometries and verifying their applicability. It exhibited an insertion loss of max -1.7dB and return loss of min -l7dB. The two transmission zeros were observed at 1.85 and 6.7GHz, respectively. In the low frequency band of $1.8GHz{\sim}1.9GHz$, the stop band suppression of min -23dB was achieved. In the high frequency band of $4.1GHz{\sim}5.4GHz$, the stop band suppression of min -l8dB was obtained. It was the first embedded and the smallest one of the filters formed into the organic packaging substrate. It has a size of $2.2{\times}1.8{\times}0.77mm^3$.

• 마이크로전자및패키징학회지
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• 제11권2호
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• pp.1-9
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• 2004

[ $BaTiO_3$ ]분말의 양과 에폭시/$BaTiO_3$ 복합 내장형 커패시터 필름의 유전상수와의 관계를 살펴보고 이에 대해 고찰하였다. 이를 위해 $BaTiO_3$ 분말의 함량에 따른 에폭시/$BaTiO_3$ 복합 내장형 커패시터 필름의 밀도 변화와 필름의 표면 및 단면 모습을 관찰하였다. 또한 $BaTiO_3$ 분말의 함량을 높이기 위한 여러 가지 bimodal 조합에 따른 에폭시/$BaTiO_3$ 복합 내장형 커패시터 필름의 유전상수 변화를 관찰하였다. 단일 입자를 이용한 unimodal의 경우 유전상수가 가장 높게 측정된 $S_4$ 분말을 이용하여 얻을 수 있었던 유전상수의 최대값은 약 60 이었다. 최대값보다 과량의 $BaTiO_3$ 분말을 첨가하였을 경우, 에폭시/$BaTiO_3$ 복합 내장형 커패시터 필름의 유전상수가 감소하는데, 이는 과량의 분말을 수용하기 위해 생성된 기공에 의한 것이었다. Bimodal 조합의 경우 가장 큰 분말과 가장 작은 분말의 조합인 $S_5+C_1$ 조합이 $75\;vol\%$의 가장 많은 양의 분말을 넣어 가장 높은 유전상수 90 을 얻는데 성공하였다.

• 마이크로전자및패키징학회지
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• 제9권2호
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• pp.11-17
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• 2002

폴리머/세라믹 복합체는 내장형 커패시터(embedded capacitor)의 유전 재료로 많은 관심을 불러 일으키고 있다. 본 논문은 bisphenol-A타입의 에폭시와 직경 0.1~0.9$mu \textrm{m}$의 크기가 다른 6가지 종류의 $BaTiO_3$분말을 이용하여 스핀코팅 방법으로 도포된 epoxy/$BaTiO_3$composite film의 유전상수와 누설전류에 미치는 분말 크기의 영향에 관한 것이다. 전체적으로 $BaTiO_3$입자가 67 vo1% 함유된 Epoxy/$BaTiO_3$composite 필름의 유전상수는 사용한 $BaTiO_3$분말의 크기가 커짐에 따라 증가하였다. 이것은 입자의 크기가 증가함에 따른 입자의 유전상수의 증가 때문이며, XRD분석을 통해 입자의 크기가 증가함에 따라 tetragonality가 증가함을 확인하였다. 복합체 필름의 누설전류도 또한 사용한 입자의 크기가 커짐에 따라 증가하였다. 이와 같은 현상의 원인은 분말의 크기가 증가함에 따라 단위길이 당 입자의 수가 감소하여 전위 장벽의 수가 줄어들고 하나의 전위 장벽에 걸리는 바이어스의 증가로 인한 전위장벽 낮춤 효과의 증대에 따른 것으로 판단된다. 이상의 결과를 토대로 볼 때 큰 입자의 분말을 사용할 때 높은 유전상수를 얻을 수 있는 반면 필름의 누설전류가 커지는 단점을 가지고 있음을 알 수 있었으며, 작은 크기의 분말은 이와 반대이다. 따라서 높은 유전상수와 낮은 누설전류 두 특성간의 절충이 요청되며 필요에 따라 적절한 크기의 분말 선택이 중요함을 알 수 있었다.

• 한국산학기술학회:학술대회논문집
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• 한국산학기술학회 2008년도 추계학술발표논문집
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• pp.60-62
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• 2008

본 논문에서는 PCB(Printed Circuit Board) 기판의 내부에 만들어지는 임베디드 캐패시터에서 정전용량 밀도를 높이고 고주파 특성을 향상시키기 위한 방안을 연구하였다. 전극의 형태 및 유전체와의 적층구조를 변형하면서 임베디드 캐패시터의 특성변화를 분석하였으며, 이를 통하여 정전용량 밀도 및 고주파 특성을 개선할 수 있었다.

• International Journal of Aeronautical and Space Sciences
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• 제17권4호
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• pp.501-517
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• 2016

Synchronized switch damping (SSD) is a structural vibration control technique in which a piezoelectric patch attached to or embedded into the structure is connected to or disconnected from the shunt circuit in order to dissipate the vibration energy of the host structure. The switching process is performed by a digital signal processor (DSP) which detects the displacement extrema and generates a command to operate the switch in synchronous with the structure motion. Recently, autonomous SSD techniques have emerged in which the work of DSP is taken up by a low pass filter, thus making the whole system autonomous or self-powered. The control performance of the previous autonomous SSD techniques heavily relied on the electrical quality factor of the shunt circuit which limited their damping performance. Thus in order to reduce the influence of the electrical quality factor on the damping performance, a new autonomous SSD technique is proposed in this paper in which a negative capacitor is used along with the inductor in the shunt circuit. Only a negative capacitor could also be used instead of inductor but it caused saturation of negative capacitor in the absence of an inductor due to high current generated during the switching process. The presence of inductor in the shunt circuit of negative capacitor limits the amount of current supplied by the negative capacitance, thus improving the damping performance. In order to judge the control performance of proposed autonomous SSDNCI, a comparison is made between the autonomous SSDI, autonomous SSDNC and autonomous SSDNCI techniques for the control of an aluminum cantilever beam subjected to both single mode and multimode excitation. A value of negative capacitance slightly greater than the piezoelectric patch capacitance gave the optimum damping results. Experiment results confirmed the effectiveness of the proposed autonomous SSDNCI technique as compared to the previous techniques. Some limitations and drawbacks of the proposed technique are also discussed.

• 한국전기전자재료학회논문지
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• 제27권9호
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• pp.547-550
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• 2014

In this study, the electrical characteristics of the nickel (Ni)/carbon nanotube (CNT)/$SiO_2$ structures were investigated in order to analyze the mechanism of CNT in MOS device structures. We fabricated 4H-SiC MOS capacitors with or without CNTs. CNT was dispersed by isopropyl alcohol. The capacitance-voltage (C-V) and current-voltage (I-V) are characterized. Both devices were measured by Keithley 4200 SCS. The experimental flatband voltage ($V_{FB}$) shift was positive. Near-interface trap charge density ($N_{it}$) and negative oxide trap charge density ($N_{ox}$) value of CNT embedded MOS capacitors was less than that values of reference samples. Also, the leakage current of CNT embedded MOS capacitors is higher than reference samples. It has been found that its oxide quality is related to charge carriers and/or defect states in the interface of MOS capacitors.

• 한국전기전자재료학회논문지
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• 제22권6호
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• pp.495-500
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• 2009

The ceramic($BaTiO_3$)-polymer(epoxy) composites have been widely investigated as dielectric materials for embedded capacitors in printed circuit boards (PCBs). The dielectric properties of $BaTiO_3$/epoxy composites prepared using the agglomerated $BaTiO_3$ particles were investigated in the present study. The dielectric constants of the composites prepared using the agglomerated $BaTiO_3$ particles were about 2 times higher than those of the composites with the dispersed $BaTiO_3$ particles. The insulation resistance of the composites prepared using the agglomerated $BaTiO_3$ particles were lower than those of the composites with dispersed $BaTiO_3$ particles. As a result, there is tradeoff between high dielectric constant and insulation resistance in the $BaTiO_3$/epoxy composites. So it is important to select proper agglomerated or dispersed $BaTiO_3$ particles in accordance with needs.