• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.23 no.12
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• pp.1359-1364
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• 2012

The C-band semi-lumped lowpass filter with broad stopband and compact size characteristic using chip inductor is proposed. To provide an additional attenuation pole in stopband by SRF, a separable inductor is added to proposed structure, and it has broad stopband characteristic. The third order elliptic function lowpass filter with chip inductor(L: 9.1 nH, SRF: 5.5 GHz, Q: 25) has insertion loss of 0.38 dB, cutoff frequency of 920 MHz, broad stopband(below 20 dB) of 1.43~7.8 GHz and the size is reduced 37.4 % compared to distributed inductor.

• ETRI Journal
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• v.35 no.3
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• pp.538-541
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• 2013

A compact microstrip lowpass filter (LPF) with an elliptic function response is proposed. A high equivalent capacitance and inductance between the structures of the resonator result in the sharp transition band of 0.04 GHz from 4 GHz to 4.04 GHz with an attenuation level of -3 dB and -20 dB, respectively. To improve the LPF rejection band, multiple open stubs are connected to the proposed resonator. A filter with a 3-dB cut-off frequency at 4 GHz is designed, fabricated, and measured, and agreement between the measured and simulated results is achieved. The results show that a stopband bandwidth of 131% with a suppression level better than -20 dB is obtained while achieving a compact size with a wide stopband.

• The Journal of the Korea institute of electronic communication sciences
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• v.13 no.5
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• pp.965-970
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• 2018

In this paper, the transition of the folded substrate integrated waveguide (FSIW) using two substrates is suggested and applied to the bandpass filter. The FSIW has similar characteristics with the SIW and can be reduced the width of the SIW. The transition between the FSIW to the microstrip is designed by using shorted quarter wavelength line. Also, the bandpass filter is designed by using the FSIW and the elliptic lowpass filter of 5 section. Fabricated bandpass filter has the center frequency of 5.75 GHz and the bandwidth of 33.2%. Also, the insertion loss and return loss at the center frequency are 0.63dB and 19.1dB, respectively.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.56 no.2
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• pp.424-427
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• 2007

A fully differential transconductor using the series composite transistor is proposed. Simulation results show that THD is less than 1.2% for the differential input signal of up to $1.5V_{p-p}$ when the input signal frequency is 10MHz. i he proposed transconductor is used to design a third-order elliptic Gm-C lowpass filter with 138kHz cutoff frequency for ADSL Tx filter. The design procedure is based on signal flow graph(SFG) of a doubly-terminated LC ladder filter by means of fully differential transconductors and capacitors. The filter is fabricated and measured with a $0.35{\mu}m$ CMOS process.

• Journal of the Korean Institute of Telematics and Electronics B
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• v.30B no.7
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• pp.42-49
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• 1993

In this paper, switched-capacitor building block presented which are suitable for implementation in GaAs MESFET technology. They include a current source, a gain stage, and an operational amplifier. Switched-capacitor design techniques are discussed that minimize filter sentsitivity to finite gain of the GaAs operational amplifier. Simulation results are presented on third-order elliptic lowpass ladder filter at a sampling rate of 5GHz.

• Proceedings of the IEEK Conference
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• 2000.11b
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• pp.257-260
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• 2000

In this paper, a Gm-C filter for low voltage and low power applications using a fully-differential transconductor is presented. The designed transconductor using the series composite transistors and the low voltage composite transistors has wide input range at low supply voltage. A negative resistor load (NRL) technology for high DC gain of the transconductor is employed with a common mode feedback (CMFB). As a design example, the third-order Elliptic lowpass filter is designed. The designed filter is simulated and examined by HSPICE using 0.25${\mu}{\textrm}{m}$ CMOS n-well parameters. The simulation results show 105MHz cutoff frequency and 2.4㎽ power dissipation with a 2.5V supply voltage.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.57 no.8
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• pp.1464-1469
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• 2008

A CMOS Gm-C filter with variable cutoff frequency applicable for using in the direct conversion receiver is designed. The designed filter comprises the CMOS differential transconductors, and the gm of the transconductor is controlled by the bias voltage. This configuration can compensate variant of the cutoff frequency which could be generated by external noises, and also be used in multiband receiver. As a results of HSPICE simulation, the control range of the cutoff frequency is $1.5MHz{\sim}3.5MHz$ and the gain control range is $-2.8dB{\sim}2.6dB$. The layout of the designed 5th-order Elliptic low-pass filter is performed to fabricate a chip using $2.5V-0.25{\mu}m$ CMOS processing parameter.

• Proceedings of the KIEE Conference
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• 2001.11c
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• pp.348-351
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• 2001

In this paper, the Gm-C filter for low voltage and low power applications using a fully-differential transconductor is presented. The designed transconductor using the series composite transistors and the low voltage composite transistors has wide input range at low supply voltage. A negative resistor load (NRL) technology for high DC gain of the transconductor is employed with a common mode feedback(CMFB). As a design example, the third-order Elliptic lowpass filter is designed. The designed filter is simulated and examined by HSPICE using TSMC $0.35{\mu}m$ CMOS n-well parameters. The simulation results show 138kHz cutoff frequency and 11.05mW power dissipation with a 3.3V supply voltage.

• 한국정보통신설비학회:학술대회논문집
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• 2006.08a
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• pp.202-204
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• 2006

A new method is presented to design RF filters without the Similarity Transform of their coupling coefficient matrix as circuit parameters which is very tedious due to pivoting and deciding rotation angles needed during the iterations. The transfer function of a filter is directly used for the design and its desired form is derived by the optimized rational-function fitting technique. A 3rd order Coaxial Lowpass filter and an 8th order dual-mode elliptic integral function response filter are taken as an example to validate the proposed method.

• JSTS:Journal of Semiconductor Technology and Science
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• v.6 no.4
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• pp.286-292
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• 2006

This paper presents the design of a low-voltage wide-band switched-capacitor (SC) filter for wireless communication receiver applications. The filter is the 5th-order Elliptic lowpass filter. With the clock frequency of 50MHz implying that an effective sampling frequency is 100MHz with double sampling scheme, the cut-off frequency of the filter is programmable to be 1.25MHz, 2.5MHz, 5MHz and 10MHz. For low-power systems powered by a single-cell battery, the SC filter was elaborately designed to operate at 1.2V power supply. Simulation result shows that the 3rd-order input intercept point (IIP3) can be up to 27dBm. The filter was fabricated in a $0.25-{\mu}m$ 1P5M standard CMOS technology and measured frequency responses show good agreement with the simulation ones. The current consumption is 34mA at a 1.2V power supply.