Gate-Induced Drain Leakage를 줄인 새로운 구조의 고성능 Elevated Source Drain MOSFET에 관한 분석 (Analysis of a Novel Elevated Source Drain MOSFET with Reduced Gate-Induced Drain Leakage and High Driving Capability)
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- 대한전자공학회논문지SD
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- 제38권6호
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- pp.390-397
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- 2001