• Proceedings of the SAREK Conference
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• 2006.06a
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• pp.602-606
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• 2006

The electrostatic is well known phenomena. The fires and explosions caused by electrostatic occur often in the coating mechanical system. This paper presents various cases of electrostatic hazards, reasons why electrostatic hazards are happened, and methods for preventing electrostatic hazards. Generally the electrostatic can be lead to corona discharging, streaming electrification, and impinging electrification in the coating process. Corona discharging happens at electrostatic spray gun with 70 kV. Streaming electrification occurs at mixing process between paint and thinner, and transportation process with thinner. Impinging electrification is shown when the thinner are sprayed to drums. For the purpose of preventing the electrostatic discharge and damage, conductors should be ground, surface electric potential of should be decreased in using electrostatic shielding and ground, and flow of thinner should be controlled acceptable velocity.

• Journal of computational fluids engineering
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• v.13 no.4
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• pp.58-65
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• 2008

In the present study, a numerical analysis on electrohydrodynamics (EHD) of the flow and the collection mechanisms inside a electrostatic precipitator with a spiral spike electrode were investigated. The phenomena of the electrostatic precipitator include complex interactions between the electric field, the fluid flow and the particle motion. To validate the numerical method, the numerical computation for the electric field of a simple wire-pipe type electrostatic system having an analytic solution were performed. Using this numerical method, the electric field of the spiked electrostatic precipitator was simulated. And the fluid flow and the particle motion inside the spiked electrostatic precipitator were numerically analyzed.

• 한국전산유체공학회:학술대회논문집
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• 2008.03a
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• pp.276-282
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• 2008

In the present study, a numerical analysis on electrohydrodynamics (EHD) of the flow and the collection mechanism inside a electrostatic precipitator were investigated. The phenomena of the electrostatic precipitator include complex interactions between the electric field, the fluid flow and the particle motion. To validate the numerical method, the numerical computation for the electric field of a simple wire-pipe type electrostatic system having an analytic solution were performed. Using this numerical method, the electric field of the spiked electrostatic precipitator was simulated. And the fluid flow and the particle motion inside the spiked electrostatic precipitator were numerically analyzed.

• 한국전산유체공학회:학술대회논문집
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• 2008.10a
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• pp.276-282
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• 2008

In the present study, a numerical analysis on electrohydrodynamics (EHD) of the flow and the collection mechanism inside a electrostatic precipitator were investigated. The phenomena of the electrostatic precipitator include complex interactions between the electric field, the fluid flow and the particle motion. To validate the numerical method, the numerical computation for the electric field of a simple wire-pipe type electrostatic system having an analytic solution were performed. Using this numerical method, the electric field of the spiked electrostatic precipitator was simulated. And the fluid flow and the particle motion inside the spiked electrostatic precipitator were numerically analyzed.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.908-910
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• 2007

Thin Film Transistor (TFT) manufacturing process is complicated. Electrostatic discharge (ESD) occurs during every process step. This paper describes ESD phenomena in terms of TFT design and processing flow. The abnormal contact between equipment and glass is found out to be the key reason causing ESD.

• Proceedings of the KIEE Conference
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• 1990.11a
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• pp.129-131
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• 1990

When insulating oil is flowed through a pipe, the electrostatic charge in the oil will be increased. Using inflammability oil, an electrostatic phenomena which may cause significantly problems as explosion must be circumvented by some methods. In this paper we made a new electrode which was applied AC field to the flowing oil for reducing electrostatic charge. Before we developed the new method of an electrostatic elimination, the electrification experiment was performed by using the same electrode which was supplied DC voltage to realize electrified conditions. As a result of this study, the effect of the electrostatic elimination could be observed.

• Journal of the Korean Society of Safety
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• v.14 no.3
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• pp.69-77
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• 1999

As the use of automatic handling equipment for sensitive semiconductor devices is rapidly increased, manufacturers of electronic components and equipment need to be more alert to the problem of electrostatic discharges(ESD). Semiconductor devices such as IC, LSI, VLSI become a high density pattern of being more fragile by ESD phenomena. One of the most common causes of electrostatic damage is the direct transfer of electrostatic charge from the human body or a charged material to the electrostatic discharge sensitive devices. Accordingly, characteristics of electrostatic attenuation in domestic semiconductor devices is investigated to evaluate the ESD phenomina in the semiconductors in this paper. The required data are obtained by Static Honestmeter. Also The results in this paper can be used for the prevention of semiconductor failure by ESD.

• Journal of the Korean Society of Safety
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• v.17 no.4
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• pp.94-100
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• 2002

As the use of automatic handling equipment for sensitive semiconductor devices is rapidly increased, manufacturers of electronic components and equipments need to be more alert to the problem of electrostatic discharges(ESD). In order to analyze damage characteristics of semiconductor device damaged by ESD, this study adopts a new charged-device model(CDM), field-induced charged model(FCDM) simulator that is suitable for rapid, routine testing of semiconductor devices and provides a fast and inexpensive test that faithfully represents ESD hazards in plants. High voltage applied to the device under test is raised by the field of non-contacting electrodes in the FCDM simulator, which avoids premature device stressing and permits a faster test cycle. Discharge current and time are measured and calculated. The characteristics of electrostatic attenuation of domestic semiconductor devices are investigated to evaluate the ESD phenomena in the semiconductors. Also, the field charging mechanism, the device thresholds and failure modes are investigated and analyzed. The damaged devices obtained in the simulator are analyzed and evaluated by SEM. The results obtained in this paper can be used to prevent semiconductor devices form ESD hazards and be a foundation of research area and industry relevant to ESD phenomena.

• Journal of the Korean Society of Safety
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• v.15 no.4
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• pp.62-68
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• 2000

Static electricity in electronics manufacturing plants causes the economic loss, yet it is one of the least understood and least recognized effects haunting the industry today. Today's challenge in semiconductor devices is to achieve greater functional density pattern and to miniaturize electronic systems of being more fragile by electrostatic discharges(ESD) phenomena. As the use of automatic handling equipment for static-sensitive semiconductor components is rapidly increased, most manufacturers need to be more alert to the problem of ESD. One of the most common causes of electrostatic damage is the direct transfer of electrostatic charge from the human body or a charged material to the static-sensitive devices. To evaluate the ESD hazards by charged human body and devices, in this paper, characteristics of electrostatic attenuation in domestic semiconductor devices is investigated and the voltage to cause electronic component failures is investigated by field-induced charged device model(FCDM) tester. The FCDM simulator provides a fast and inexpensive test that faithfully represents ESD hazards in plants. Also the results obtained in this paper can be used for the prevention of semiconductor failure from ESD hazards.

• Transactions of the Korean Society for Noise and Vibration Engineering
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• v.21 no.9
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• pp.813-819
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• 2011

This paper predicted nonlinear dynamic responses of a cantilevered carbon nanotube(CNT) resonator incorporating the electrostatic forces and van der Waals interactions between the CNT cantilever and ground plane. The structural model of CNT includes geometric and inertial nonlinearities to investigate various phenomena of nonlinear responses of the CNT due to the electrostatic excitation. In order to solve this problem, we used Galerkin's approximation and the numerical integration techniques. As a result, the CNT nano-resonator shows the softening effect through saddle-node bifurcation near primary resonance frequency with increasing the applied AC and DC voltages. Also we can predict nonlinear secondary resonances such as superharmonic and subharmonic resonances. The superharmonic resonance of the nano-resonator is influenced by applied AC voltage. The period-doubling bifurcation leads to the subharmonic resonance which occurs when the nano-resonator is actuated by electrostatic forces as parametric excitation.