• Tribology and Lubricants
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• 제22권2호
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• pp.59-65
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• 2006

In hard disk drives as the head to disk spacing continues to decrease to facilitate recording densities, slider disk interactions have become much more severe due to direct contact of head and disk surfaces in both start/stop and flying cases. The slider disk interaction in CSS (contact-start-stop) mode is an important source of particle generation and tribocharge build-up. The tribocharge build-up in the slider disk interface can cause ESD (electrostatic discharge) damage. In turn, ESD can cause severe melting damage to MR or GMR heads. The spindle speed of typical hard disk drives has increased in recent years from 5400 rpm to 15000 rpm and even higher speeds are anticipated in the near future. And the increasing disk velocity leads to increasing disk acceleration and this might affect the tribocharging phenomena of the slider/disk interface. We investigated the tribocurrent/voltage build-up generated in HDD, operating at increasing disk accelerations. In addition, we examined the effects with relative humidity conditions and rest time. We found that the tribocurrent/voltage was generated during pico-slider/disk interaction and its level was about $3\sim16pA$ and $0.1\sim0.3V$, respectively. Tribocurrent/voltage build-up was reduced with increasing disk acceleration. Higher humidity conditions $(75\sim80%)$ produced lower levels tribovoltage/current. Therefore, a higher tribocharge is expected at a lower disk acceleration and lower relative humidity condition. Rest time affected the charge build-up at the slider-disk interface. The degree of tribocharge build-up increased with increasing rest time.

• Tribology and Lubricants
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• 제37권2호
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• pp.71-76
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• 2021

As opposed to using fossil fuels, we need to use eco-friendly resources such as sunlight, raindrops and wind to produce electricity and combat environmental pollution. A triboelectric nanogenerator (TENG) is a device that converts mechanical energy into electricity by inducing repetitive contact and separation of two dissimilar materials. During the contact and separation processes, electron flow occurs owing to a change in electric potential of the contacting surface caused by contact electrification and electrostatic induction mechanisms. A solid-solid contact TENG is widely known, but it is possible to generate electricity via liquid-solid contact. Therefore, by designing a hydrophobic TENG, we can gather electricity from raindrop energy in a feasible manner. To fabricate the superhydrophobic surface of TENGs, we employ a dip coating technique to synthesize an octadecylamine (ODA)- and polydimethylsiloxane (PDMS)-based coating on polyethylene terephthalate (PET). The synthesized coating exhibits superhydrophobicity with a contact angle greater than 150° and generates a current of 2.2 ㎂/L while water droplets fall onto it continuously. Hence, we prepare a box-type TENG, with the ODA/PDMS coating deposited on the inside, and place a 1.5 mL water droplet into it. Resultantly, we confirm that the induced vibration causes continuous impacts between the ODA/PDMS coating and the water, generating approximately 100 pA for each impact.

• 반도체디스플레이기술학회지
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• 제20권1호
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• pp.32-36
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• 2021

The number of processes in the manufacture of semiconductors, displays and solar cells is increasing. And as the processes is performed, multiple layers of films and various patterns are formed on the wafer. At this time, substrate warpage occurs due to the difference in stress between each film and pattern formed on the wafer. the substrate warping phenomenon occurs due to the difference in stress between each film and pattern formed on the wafer. We developed a new warpage measurement method to measure wafer warpage during real-time processing. We performed an experiment to measure the presence and degree of warpage of the substrate in real time during the process by adding only measurement equipment for applying additional electrical signals to the existing ESC and detecting the change of the additional electric signal. The additional electrical measurement signal applied at this time is very small compared to the direct current (DC) power applied to the electrostatic chuck whit a frequency that is not generally used in the process can be selectively used. It was confirmed that the measurement of substrate warpage can be easily separated from other power sources without affecting.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.546-546
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• 2008

Copper (Cu) Chemical mechanical polishing (CMP) has been an essential process for Cu wifing of DRAM and NAND flash memory beyond 45nm. Copper has been employed as ideal material for interconnect and metal line due to the low resistivity and high resistant to electro-migration. Damascene process is currently used in conjunction with CMP in the fabrication of multi-level copper interconnects for advanced logic and memory devices. Cu CMP involves removal of material by the combination of chemical and mechanical action. Chemicals in slurry aid in material removal by modifying the surface film while abrasion between the particles, pad, and the modified film facilitates mechanical removal. In our research, we emphasized on the role of chemical effect of slurry on Cu CMP, especially on the effect of amine functional group on removal rate selectivity between Cu and Tantalum-nitride (TaN) film. We investigated the two different kinds of complexing agent both with amine functional group. On the one hand, Polyacrylamide as a polymer affected the stability of abrasive, viscosity of slurry and the corrosion current of copper film especially at high concentration. At higher concentration, the aggregation of abrasive particles was suppressed by the steric effect of PAM, thus showed higher fraction of small particle distribution. It also showed a fluctuation behavior of the viscosity of slurry at high shear rate due to transformation of polymer chain. Also, because of forming thick passivation layer on the surface of Cu film, the diffusion of oxidant to the Cu surface was inhibited; therefore, the corrosion current with 0.7wt% PAM was smaller than that without PAM. the polishing rate of Cu film slightly increased up to 0.3wt%, then decreased with increasing of PAM concentration. On the contrary, the polishing rate of TaN film was strongly suppressed and saturated with increasing of PAM concentration at 0.3wt%. We also studied the electrostatic interaction between abrasive particle and Cu/TaN film with different PAM concentration. On the other hand, amino-methyl-propanol (AMP) as a single molecule does not affect the stability, rheological and corrosion behavior of the slurry as the polymer PAM. The polishing behavior of TaN film and selectivity with AMP appeared the similar trend to the slurry with PAM. The polishing behavior of Cu film with AMP, however, was quite different with that of PAM. We assume this difference was originated from different compactness of surface passivation layer on the Cu film under the same concentration due to the different molecular weight of PAM and AMP.

• 한국안전학회지
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• 제31권5호
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• pp.22-27
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• 2016

The Electrostatic Charge Prevention Technology is a core factor that highly influences the yield of Ultra High Resolution Flat Panel Display and high-integrated semiconductor manufacturing processes. The corona or x-ray ionizations are commonly used in order to eliminate static charges during manufacturing processes. To develop such a revolutionary x-ray ionizer that is free of x-ray radiation and has function to control the volume of ion formation simultaneously is a goal of this research and it absolutely overcomes the current risks of x-ray ionization. Under the International Commission on Radiological Protection, it must have a leakage radiation level that should be lower than a recommended level that is $1{\mu}Sv/hour$. In this research, the new generation of x-ray ionizer can easily control both the volume of ion formation and the leakage radiation level at the same time. In the research, the test constraints were set and the descriptions are as below; First, In order not to leak x-ray radiation while testing, the shielding box was fully installed around the test equipment area. Second, Implement the metallic Ring Electrode along a tube window and applied zero to ${\pm}8kV$ with respect to manage the positive and negative ions formation. Lastly, the ion duty ratio was able to be controlled in different test set-ups along with a free x-ray leakage through the metallic Ring Electrode. In the result of experiment, the maximum x-ray radiation leakage was $0.2{\mu}Sv/h$. These outcome is lower than the ICRP 103 recommended value, which is $1{\mu}Sv/h$. When applying voltage to the metallic ring electrode, the positive decay time was 2.18s at the distance of 300 mm and its slope was 0.272. In addition, the negative decay time was 2.1s at the distance of 300 mm and its slope was 0.262. At the distance of 200 mm, the positive decay time was 2.29s and its slope was 0.286. The negative decay time was 2.35s and its slope was 0.293. At the distance of 100 mm, the positive decay time was 2.71s and its slope was 0.338. The negative decay time was 3.07s and its slope was 0.383. According to these research, the observation was shown that these new concept of ionizer is able to minimize the leakage radiation level and to control the positive and negative ion duty ratio while ionization.

• 대한기계학회논문집A
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• 제34권10호
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• pp.1385-1391
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• 2010

본 논문에서는 폰 카메라 응용을 위해 H 형 비틀림 스프링으로 지지된 한 쌍의 사다리꼴 셔터 블레이드를 이용하는 초소형, 저전력, 고속 전자기력 Flapping 셔터를 제안한다. 기존의 정전기력 Rolling 셔터와 Flapping 셔터는 폰 카메라 응용을 위해 큰 입력 전압이 필요하며, 기존의 전자기력 Rotating 셔터는 큰 부피로 인해 폰 카메라에 사용하기 어렵다. 본 논문에서 제안하는 전자기력 Flapping 셔터는 폰 카메라에 사용 가능한 작은 크기로 회전 구동을 위해 저강성 H 형 비틀림 스프링과 저관성 사다리꼴 블레이드로 설계하여 제작된다. 실험에서 전자기력 Flapping 셔터는 입력전류 60 mA 에서 자기장 0.15 T 와 0.30 T 에 대하여 각각 최대 오버슈트 회전각 $80.2{\pm}3.5^{\circ}$와 $90.0{\pm}1.0^{\circ}$와, 정상 상태 회전각 $48.8{\pm}1.4^{\circ}$와 $64.4{\pm}1.0^{\circ}$ 성능을 보인다. 응답 시간 성능에서는 셔터 개방의 경우, 1.0 ms/20.0 ms 의 상승/정착 시간을 보이며, 셔터 폐쇄의 경우는 1.7 ms/10.3 ms 의 하강/정착 시간을 보인다. 본 논문에서는 폰 카메라용 셔터 응용을 위해 제안하는 전자기력 Flapping 셔터의 초소형(${\sim}8{\times}8{\times}2\;mm^3$), 저전력(${\leq}60\;mA$), 고속(~1/370 s) 성능을 실험적으로 검증하였다.

• 한국과학교육학회지
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• 제37권2호
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• pp.253-262
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• 2017

본 연구에서는 중등 전자기 수업에서 사용하는 시각적 표상의 역할에 대한 교사의 인식과 활용 실태를 조사하고 시각적 표상 활용과 관련해서 교사가 겪는 어려움을 파악하고자 하였다. 조사는 온라인 설문 방식으로 진행되었으며 과학교사 121명이 참여하였다. 연구 결과에 따르면, 교사들은 전자기 수업에서 시각적 표상 활용의 중요성에 대해 전반적으로 동의하였으나, 시각적 표상을 주로 과학 지식의 전달 도구로만 인식하는 경향이 있었다. 실제 수업에서 활용하는 방식은 주로 인터넷을 검색을 바탕으로 컴퓨터를 활용해 제시하는 방법을 가장 많이 사용하였다. 구체적으로 전자기 수업에서 널리 활용되는 세 가지 시각적 표상(검전기의 정전기 유도, 전류 주변의 자기장, 전동기의 구조와 원리)에 대해 활용 방식을 조사한 결과, 학생 중심 활용보다 교사 중심 활용이 두 배 가량 많았고, 시각적 표상의 '해석', '구성', '적용', '평가'와 관련해서는 '교사의 구성'이 가장 빈번한 것으로 나타났다. 이러한 교사 중심의 시각적 표상 활용 실태는 시각적 표상의 역할에 대한 교사의 제한적 인식과 밀접하게 연관되어 있는 것으로 보인다. 또한 주어진 세 가지 시각적 표상 활용과 관련된 교사의 어려움은 크게 '교사 자신', '학생', '표상 자체의 특성', '자료 부족이나 수업환경'에 기인한 것으로 범주화되었다. 시각적 표상의 연구와 개발에 있어서 이러한 요인들이 적극 고려되어야 하며 과학 수업에서 시각적 표상을 효과적으로 활용하기 위해서는 시각적 표상의 역할에 대한 교사의 인식이 확장되도록 하고, 교사의 표상 활용 능력을 증진시키는 것이 필요하다.

• JSTS:Journal of Semiconductor Technology and Science
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• 제16권1호
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• pp.91-105
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• 2016

Carbon Nanotube Field-Effect Transistors (CNTFETs) have been studied as candidates for post Si CMOS owing to the better electrostatic control and high mobility. To enhance the immunity against short - channel effects (SCEs), the novel channel and gate engineered architectures have been proposed to improve CNTFETs performance. This work presents a comprehensive study of the influence of channel and gate engineering on the CNTFET switching, high frequency and circuit level performance of carbon nanotube field-effect transistors (CNTFETs). At device level, the effects of channel and gate engineering on the switching and high frequency characteristics for CNTFET have been theoretically investigated by using a quantum kinetic model. This model is based on two-dimensional non-equilibrium Green's functions (NEGF) solved self - consistently with Poisson's equations. It is revealed that hetero - material - gate and lightly doped drain and source CNTFET (HMG - LDDS - CNTFET) structure can significantly reduce leakage current, enhance control ability of the gate on channel, improve the switching speed, and is more suitable for use in low power, high frequency circuits. At circuit level, using the HSPICE with look - up table(LUT) based Verilog - A models, the impact of the channel and gate engineering on basic digital circuits (inverter, static random access memory cell) have been investigated systematically. The performance parameters of circuits have been calculated and the optimum metal gate workfunction combinations of ${\Phi}_{M1}/{\Phi}_{M2}$ have been concluded in terms of power consumption, average delay, stability, energy consumption and power - delay product (PDP). In addition, we discuss and compare the CNTFET-based circuit designs of various logic gates, including ternary and binary logic. Simulation results indicate that LDDS - HMG - CNTFET circuits with ternary logic gate design have significantly better performance in comparison with other structures.

• 전기화학회지
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• 제2권1호
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• pp.31-37
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• 1999

구리이온을 함유하는 효소인 laccase(Rhus vernicifera)를 self-assembly technique을 이용하여 금전극 표면에 고정시킨 후 표면의 특성을 관찰하고 반응을 살펴보았다. laccase는 diphenol, diamine등을 산소에 의해 산화시킬 수 있는 oxidoreductase이다. 이 경우 산소는 peroxide나 superoxide 등의 중간체 생성없이 물까지 직접 4전자 환원이 일어난다. $\beta-mercaptopropionate$를 이용하여 금전극 표면에 음전하를 띤 self-assembled monolayer를 형성시킨 후, 중성용액에서 양 전하를 띤 laccase(pI=9)를 정전기적 인력에 의해 고정시킨 후, 순환 전압-전류법에 의한 실험으로 전극표면에 고정되었음을 확인하였다. 또한, 낮은 주사속도에서 흐른 전하량으로부터 surface coverage를 계산하여 전극표면에 효소가 monolayer로 덮여 있음을 확인하였다. laccase가 고정된 전극을 laccase의 기질인 ABTS(2,2-azino-bis-(3-ethylbenzthioline-6-sulfonic acid) 용액에 담그면 ABTS가 산화되는 것으로부터 고정된 laccase가 활성을 가지고 있음을 확인하였고, 그 효소효과는 $4^{\circ}C$에서 $2\~3$일 동안 지속됨을 관찰하였다. 앞서 구한 surface coverage로부터 고정된 효소의 양을 알 수 있어서, 표면에 고정된 laccase가용액상의 laccase에 비하여 $10\~15\%$정도만의 효소효과를 유지하고 있음을 알 수 있었다. 또한, laccase의 산소의 전기화학적 환원 촉매로서의 역할에 대하여 용액상에서와 전극표면에 고정시켰을 경우에 비교하여 보았는데, 두 경우 다 전자전달체가 없이는 산소환원의 촉매로 작용하지 않고, $Fe(CN)_6^{3-}$를 전자전달체로 사용한 경우에 산소환원의 촉매로 작용함을 알 수 있었다. 이러한 산소환원촉매로서의 역할이 laccase로부터 기인한다는 것은 억제제인 azide를 이용한 실험으로 다시 한 번 확인할 수 있었다.

• Korean Chemical Engineering Research
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• 제55권2호
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• pp.258-263
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• 2017

본 연구에서는 글루코스 산화효소(glucose oxidase, GOx), 고분자인 폴리에틸렌이민(polyethyleneimine, PEI), 카본나노튜브(carbon nanotube, CNT)와 벤조퀴논(benzoquinone, BQ)을 이용하여 글루코스 바이오연료전지를 위한 바이오 촉매를 합성하였다. 이를 위해, 지지체인 PEI/CNT 복합체에 BQ를 정전기적 인력을 통해 물리적으로 포집한 뒤, GOx를 담지시켜 합성하였다. 이는 기존에 전자 매개체로서 전해질에 풀어서 사용했던 BQ를 전해질이 아닌 촉매 내에 포집하여 촉매를 구성하였다는 개선점이 크며, 그 결과, BQ가 포집되지 않은 촉매 대비, 1.9배 상승한 $34.16{\mu}A/cm^2$의 최대전류밀도를 얻음을 통해 촉매활성이 개선되었음을 증명하였고, 바이오연료전지의 산화극 촉매로 이용 시, BQ가 포집되지 않은 촉매를 이용한 바이오연료전지에 비해 1.2배 상승한 $0.91mW/cm^2$의 최대출력밀도를 얻었다. 이를 통해 바이오연료전지의 산화극을 위한 촉매로서 GOx와 함께 담지된 매개체 BQ를 포함한 촉매 제조 가능성을 확인하였다.