• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.172-176
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• 2002

This paper describes a MEMS-based micro-fluxgate magnetic sensing element using Ni$\_$0.8/Fe$\_$0.2/ film formed by electroplating. The micro-fluxgate magnetic sensor composed of a thin film magnetic core and micro-structured solenoids for the pick-up and the excitation coils, is developed by using MEMS technologies in order to take advantage of low-cost, small size and lower power consumption in the fabrication. A copper with 20um width and 3um thickness is electroplated on Cr(300${\AA}$)/Au(1500${\AA}$) films for the pick-up(42turn) and the excitation(24turn) coils. In order to improve the sensitivity of the sensing element, we designed the magnetic core into a rectangular-ring shape to reduce the magnetic flux leakage. An electroplated permalloy film with the thickness of 3 $\mu\textrm{m}$ is obtained under 2000Gauss to induce magnetic anisotropy. The magnetic core has the high DC effective permeability of ∼1,100 and coercive field of -0.1Oe. The fabricated sensing element using rectangular-ring shaped magnetic film has the sensitivity of about 150V/T at the excitation frequency of 2MHz and the excitation voltage of 4.4Vp-p. The power consumption is estimated to be 50mW.

• Transactions on Electrical and Electronic Materials
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• v.6 no.3
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• pp.110-114
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• 2005

We present a micro fluxgate magnetic sensor having solenoid coils and racetrack shaped magnetic core, which was designed to decrease the .operating power and magnetic flux leakage. Electroplated copper coils of $6\;{\mu}m$ thickness and the core of $3\;{\mu}m$ thickness were separated by benzocyclobutane (BCB) having a high insulation and good planarization characters. Permalloy $(Ni_{0.8}Fe_{0.2})$ as a magnetic core was also electroplated under 2000 gauss to induce the magnetic anisotropy. The core had the high DC effective permeability of $\~1,300$ and coercive field of $\~0.1$ Oe. The fabricated fluxgate sensor had the very small actual size of $3.0\times1.7\;mm^2$. The fluxgate sensor with a racetrack shaped core had the high sensitivity .of $\~350$ V/T at excitation condition of 3 $V_{P-P}$ and 2 MHz square wave. When two fluxgates were perpendicularly aligned in terrestrial field, their two-axis output signals were very useful to commercialize an electronic azimuth compass for the portable navigation system.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.2
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• pp.120-124
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• 2003

This paper describes a MEMS-based micro-fluxgate magnetic sensing element using Ni$\_$0.8/Fe$\_$0.2/ film formed by electroplating. The micro-fluxgate magnetic sensor composed of a thin film magnetic core and micro-structure solenoids for the pick-up and the excitation coils, is developed by using MEMS technologies in order to take advantage of low-cost, small size and lower power consumption in the fabrication. A copper with 20${\mu}$m width and 3${\mu}$m thickness is electroplated on Cr (300${\AA}$) / Au (1500${\AA}$) films for the pick-up (42turn) and the excitation (24turn) coils. In order to improve the sensitivity of the sensing element, we designed the magnetic core into a rectangular-ring shape to reduce the magnetic flux leakage. An electroplated permalloy film with the thickness of 3${\mu}$m is obtained under 2000 gauss to induce magnetic anisotropy. The magnetic core has the high DC effective permeability of ~1,100 and coercive field of ~0.1 Oe. The fabricated sensing element using rectangular-ring shaped magnetic film has the sensitivity of about 150 V/T at the excitation frequency of 2 MHz and the excitation voltage of 4.4 V$\_$p p/. The power consumption is estimated to be 50mW.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.370-373
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• 2003

As the integrated circuit device shrinks to the smaller dimension, the chemical mechanical polishing (CMP) process was required for the global planarization of inter-metal dielectric(IMD) layer with free-defect. However, as the IMD layer gets thinner, micro-scratches are becoming as major defects. Chemical-Mechanical Planarization(CMP) of conductors is a key process in Damascene patterning of advanced interconnect structure. The effect of alternative commerical slurries pads, and post-CMP cleaning alternatives are discuess, with removal rate, scratch dentisty, surface roughness, dishing, erosion and particulate density used as performance metrics. Electroplated copper depostion is a mature process from a historical point of view, but a very young process from a CMP persperspective. While copper electrodepostion has been used and stuidied for dacades, its application to Cu damascene wafer processing is only now ganing complete accptance in the semiconductor industry. The polishing mechanism of Cu CMP process has been reported as the repeated process of passive layer formation by oxidizer and abrasion action by slurry abrasives. however it is important to understand the effect of oxidizer on copper pasivation layer in order to obtain higher removal rate and non-uniformity during Cu-CMP process. In this paper, we investigated the effects of oxidizer on Cu-CMP process regarding the additional volume of oxidizer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.20-23
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• 2004

As the integrated circuit device shrinks to the smaller dimension, the chemical mechanical polishing(CMP) process was required for the global planarization of inter-metal dielectric(IMD) layer with free-defect. However, as the IMD layer gets thinner, micro-scratches are becoming as major defects. Chemical-Mechanical polishing(CMP) of conductors is a key process in Damascene patterning of advanced interconnect structure. The effect of alternative commercial slurries pads, and post-CMP cleaning alternatives are discuss, with removal rate, scratch dentisty, surface roughness, dishing, erosion and particulate density used as performance metrics. Electroplated copper deposition is a mature process from a historical point of view, but a very young process from a CMP perspective. While copper electro deposition has been used and studied for decades, its application to Cu damascene wafer processing is only now gaining complete acceptance in the semiconductor industry. The polishing mechanism of Cu-CMP process has been reported as the repeated process of passive layer formation by oxidizer and abrasion action by slurry abrasives. however it is important to understand the effect of oxidizer on copper passivation layer in order to obtain higher removal rate and non-uniformity during Cu-CMP process. In this paper, we investigated the effects of oxidizer on Cu-CMP process regarding the additional volume of oxidizer.

• Journal of the Microelectronics and Packaging Society
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• v.15 no.2
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• pp.29-36
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• 2008

In this paper, mechanical reliability issues of copper through-wafer interconnections are investigated numerically and experimentally. A hermetic wafer level packaging for MEMS devices is developed. Au-Sn eutectic bonding technology is used to achieve hermetic sealing, and the vertical through-hole via filled with electroplated copper for the electrical connection is also used. The MEMS package has the size of $1mm{\times}1mm{\times}700{\mu}m$. The robustness of the package is confirmed by several reliability tests. Several factors which could induce via hole cracking failure are investigated such as thermal expansion mismatch, via etch profile, and copper diffusion phenomenon. Alternative electroplating process is suggested for preventing Cu diffusion and increasing the adhesion performance of the electroplating process. After implementing several improvements, reliability tests were performed, and via hole cracking as well as significant changes in the shear strength were not observed. Helium leak testing indicated that the leak rate of the package meets the requirements of MIL-STD-883F specification.

• Journal of Surface Science and Engineering
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• v.55 no.4
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• pp.222-230
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• 2022

The electroplating for copper foils has many advantages in economics. During the electroplating, the selection of appropriate additives is needed to manufacture copper foils with various properties. Therefore, it is investigated the initial plating voltage and the properties of copper foil electroplated in the electrolyte with benzothiazole as additives. The addition of benzothiazole without any additives decreased effectively the initial plating voltage. However, the initial voltage increased when the additives was used in combination with an inhibitor and a leveler along with benzothiazole. Moreover, the voltage tends to increase with the concentration of benzothiazole except for 40 ppm group. The mixed additives could change not only the initial voltage but also the morphology of crystals on the surface. When benzothiazole is added at 20 ppm or less, it was observed that the clustered crystals existed on the surface, which result in ununiform surface and high roughness value. In addition, the grain size increased with the amount of benzothiazole, but the resistivity decreased. However, when the leveler was added in 20 ppm, the grain size was decreased with the amount of benzothiazole. The size of the crystals could be influenced by the mixing ratio of additives. Therefore, it is necessary to study on the effect of concentration ratio of additives in the future.

• Journal of the Microelectronics and Packaging Society
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• v.18 no.2
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• pp.43-48
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• 2011

The maximum current density of copper electrorefining is 350 A/$m^2$ and the higher current density is required to promote the copper productivity. The 1000 A/$m^2$ high current density is possible when rotating disc electrode is employed to reduce diffusion thickness. The copper electroplating with 1000 A/$m^2$ is possible at 400 rpm. Thiourea and glue were used to improve the electrodeposition behaviors during copper electrorefining process. Potentiodynamic polarization tests were conducted to investigate the effects of additives on copper electrodeposition. Galvanostatic tests were also conducted at 1000 A/$m^2$. Copper were electroplated on cylindrical rotating electrodes to give the uniform flow on the electrode surface. The lowest surface roughness was obtained when 16 ppm thiourea was added to the electrolytes. The surface roughness was increased with glue concentration. The surface hardness was not influenced by addition of glue. The copper nuclei were getting smaller with thiourea concentration, however there is no glue effects on copper nucleation.

• Journal of the Microelectronics and Packaging Society
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• v.7 no.4
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• pp.23-29
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• 2000

We demonstrate the fabrication method of high-density and high-quality solder bump solving a copper (Cu) cross-contamination in Si-LSI laboratory. The Cu cross-contamination is solved by separating solder-bump process by two steps. Former is via-formation process excluding Cu/Ti under ball metallurgy (UBM) layer sputtering in Si-LSI laboratory. Latter is electroplating process including Ti-adhesion and Cu-seed layers sputtering out of Si-LSI laboratory. Thick photoresist (PR) is achieved by a multiple coating method. After TiW/Al-electrode sputtering for electroplating and via formation in Si-LSI laboratory, Cu/Ti UBM layer is sputtered on sample. The Cu-seed layer on the PR is etched during Cu-electroplating with low-electroplating rate due to a difference in resistance of UBM layer between via bottom and PR. Therefore Cu-buffer layer can be electroplated selectively at the via bottom. After etching the Ti-adhesion layer on the PR, Sn/Pb solder layer with a composition of 60/40 is electroplated using a tin-lead electroplating bath with a metal stoichiometry of 60/40 (weight percent ratio). Scanning electron microscope image shows that the fabricated solder bump is high-uniformity and high-quality as well as symmetric mushroom shape. The solder bumps with even 40/60 $\mu\textrm{m}$ in diameter/pitch do not touch during electroplating and reflow procedures. The solder-bump process of high-uniformity and high-density with the Cu cross-contamination free in Si-LSI laboratory will be effective for electronic microwave application.

• Journal of the Microelectronics and Packaging Society
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• v.23 no.3
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• pp.63-67
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• 2016

In this paper, we present an indirect method of elastic modulus measurement for various lamination layers formed on polymer-based compliant substrates. Although the elastic modulus of every component is crucial for mechanically reliable microelectronic devices, it is difficult to accurately measure the film properties because the lamination layers are hardly detached from the substrate. In order to resolve the problem, 3-point bending test is conducted with a film-substrate specimen and area transformation rule is applied to the cross-sectional area of the film region. With known substrate modulus, a modulus ratio between the film and the substrate is calculated using bending stiffness of the multilayered specimen obtained from the 3-point bending test. This method is verified using electroplated copper specimens with two types of film-substrate structure; double-sided film and single sided film. Also, common dielectric layers, prepreg (PPG) and dry film solder resist (DF SR), are measured with the double-sided specimen type. The results of copper (110.3 GPa), PPG (22.3 GPa), DF SR (5.0 GPa) were measured with high precision.