• 제목/요약/키워드: Electronic transport

검색결과 903건 처리시간 0.038초

몬테칼로 시뮬레이션과 볼츠만 방정식을 이용한 저전압 기중차단기의 전자수송계수 특성파악 (Analysis of Electron Transport Coefficients in Low Voltage Air Circuit Breaker Using MCS and BE)

  • 하성철;서상현
    • 한국전기전자재료학회논문지
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    • 제16권2호
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    • pp.168-172
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    • 2003
  • The electron transport coefficients in Air is analysed in range of E/Nvalues from 100~1000(Td) by a MCS and BE method. This paper have calculated W, ND$\sub$L/, ND$\sub$T/, Mean energy mixtures by N$_2$+O$_2$. The results gained that the values of the electron swarm parameters such as the electron drift velocity, longitudinal and transverse diffusion coefficients.

HTL:EML(DPVBi:NPB)층의 조성비 변화에 따른 청색 유기 발광 소자 개발 (Development of Blue Organic Light-emitting Diodes(OLEDs) Due to Change in Mixed Ratio of HTL:EML(DPVBi:NPB) Layers)

  • 이태성;이병욱;홍진수;김창교
    • 한국전기전자재료학회논문지
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    • 제21권9호
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    • pp.853-858
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    • 2008
  • The structure of organic light-emitting diodes(OLEDs) with typical heterostructure consists of anode, hole injection layer, hole transport layer, light-emitting layer, electron transport layer, electron injection layer, and cathode. 4,4bis[N-(1-napthyl)-N-phenyl-amino]-biphenyl(NPB) used as a hole transport layer and 4'4-bis(2,2'-diphenyl vinyl)-1,1'-biphenyl(DPVBi) used as a blue light emitting layer were graded-mixed at selected ratio. Interface at heterojunction between the hole transport layer and the elecrtron transport layer restricts carrier's transfer. Mixing of the hole transport layer and the emitting layer reduces abrupt interface between the hole transport layer and the electron transport layer. The operating voltage of OLED devices with graded mixed-layer structure is 2.8 V at 1 $cd/m^2$ which is significantly lower than that of OLED device with typical heterostructure. The luminance of OLED devices with graded mixed-layer structure is 21,000 $cd/m^2$ , which is much higher than that of OLED device with typical heterostructure. This indicates that the graded mixed-layer enhances the movement of carriers by reducing the discontinuity of highest occupied molecular orbital(HOMO) of the interface between hole transport layer and emitting layer.

BCP 전자수송층 두께가 백색 OLED의 효율 및 발광 특성에 미치는 영향 (Effects of BCP Electron Transport Layer Thickness on the Efficiency and Emission Characteristics of White Organic Light-Emitting Diodes)

  • 서유석;문대규
    • 한국전기전자재료학회논문지
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    • 제27권1호
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    • pp.45-49
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    • 2014
  • We have fabricated white organic light-emitting diodes (OLEDs) using several thicknesses of electron-transport layer. The multi-emission layer structure doped with red and blue phosphorescent guest emitters was used for achieving white emission. 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP) was used as an electron-transport layer. The thickness of BCP layer was varied to be 20, 55, and 120 nm. The current efficiency, emission and recombination characteristics of multi-layer white OLEDs were investigated. The BCP layer thickness variation results in the shift of emission spectrum due to the recombination zone shift. As the BCP layer thickness increases, the recombination zone shifts toward the electron-transport layer/emission-layer interface. The white OLED with a 55 nm thick BCP layer exhibited a maximum current efficiency of 40.9 cd/A.

몬테칼로법을 이용한 Ar기체의 전자수송계수에 관한 연구 (A study on the electron transport coefficients using monte carlo method in argon gas)

  • 하성철;전병훈
    • E2M - 전기 전자와 첨단 소재
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    • 제8권6호
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    • pp.685-692
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    • 1995
  • The electron transport coefficients in argon gas is studied over the range of E/N values from 85 to 566 Td by the Monte Carlo method considering the latest cross section data. The result of the Monte Carlo method analysis shows that the value of the electron transport coefficients such as the electron drift velocity, the ratio of the longitudinal and transverse diffusion coefficients to the mobility. It is also found that the electron transport coefficients calculated by the two-term approximation analysis agree well with those by Monte Carlo calculation. The electron energy distributions function were analysed in argon at E/N=283, and 566 Td for a case of the equilibrium region in the mean electron energy. A momentum transfer cross section for the argon atom which was consistent with both of the present electron transport coefficients was derived over the range of mean electron energy from 10.3 to 14.5 eV, also suggested as a set of electron cross section for argon atom. The validity of the results obtained has been confirmed by a Monte Carlo simulation method.

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사고전류 제한형 고온 초전도케이블의 통전부 특성평가 (Evaluation on the Properties of the Current Transporting Part for Fault-Current-Limiting Type HTS Cables)

  • 김태민;홍공현;한병성;두호익
    • 한국전기전자재료학회논문지
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    • 제27권10호
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    • pp.657-661
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    • 2014
  • When an abnormal condition occurs due to a fault current at a consumer location where electricity is supplied through high-Tc superconducting(HTS) cable, the HTS cable would be damaged if there is no appropriate method to protect it. The fault-current-limiting type HTS cable that is suggested in this study has a structure of transport part and limit part. It conduct a zero impedance transport current at ordinary operations and carry out a fault current limiting at extraordinary operations. To make a perfect this structure, it is essential to investigate electrical properties of transport part that comprise the fault-current-limiting type HTS cable. In this paper, transport part that comprise HTS wire with copper stabilization layer is examined the current transport properties and the stability evaluation.

Controlling Intermolecular Interactions, Optical Property, and Charge Transport in Conjugated Polyelectrolytes for Applications in Opto-electronics Devices

  • Nguyen, Thuc-Quyen;Garcia, Andres;Yang, Renqiang;Bazan, Guillermo
    • 한국고분자학회:학술대회논문집
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    • 한국고분자학회 2006년도 IUPAC International Symposium on Advanced Polymers for Emerging Technologies
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    • pp.229-229
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    • 2006
  • Recently there has been significant interest in utilizing functional semiconductor polymers for electronic and opto-electronic devices such as Light-emitting diodes, thin film field effect transistors, solar cells, displays, and chemical and biosensors. However, better materials and further understanding of their electronic properties are critical for devices based on these materials. In this work, we use various scanning probe techniques, spectroscopy, and device fabrication to study the molecular interactions, optical and charge transport properties in conjugated polyelectrolytes. Using chemical synthesis approach, we are able to tune the molecular packing and interactions in these materials, which in turn, influence their electronic properties and device performance.

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New PDP cell designs for high luminous efficiency and radiation transport model in PDP

  • Yang, Sung-Soo;Shin, Seung-Won;Kim, Hyun-Chul;Lee, Jae-Koo
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2002년도 International Meeting on Information Display
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    • pp.590-593
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    • 2002
  • Using two- and three-dimensional fluid simulation codes, we have suggested several new plasma display panel (PDP) cell structures that have high luminous efficiency compared with conventional structure. To improve the luminance and discharge efficiency, we utilize long discharge path, lower electric field region, and reduction of power consumption by adding one auxiliary electrode or reducing the electrode area. Consequently, luminous efficiency increases about 1.8 times. Furthermore for the resonance radiation trapping effect in PDP system, we have described a self-consistent radiation transport model coupled with fluid simulation using modified Holstein's equation.

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결함제어를 통한 열전 반도체 연구 동향 (Defect Engineering for High-Performance Thermoelectric Semiconductors)

  • 민유호
    • 한국전기전자재료학회논문지
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    • 제35권5호
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    • pp.419-430
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    • 2022
  • Defects in solids play a vital role on thermoelectric properties through the direct impacts of electronic band structure and electron/phonon transports, which can improve the electronic and thermal properties of a given thermoelectric semiconductor. Defects in semiconductors can be divided into four different types depending on their geometric dimensions, and thus understanding the effects on thermoelectric properties of each type is of a vital importance. This paper reviews the recent advances in the various thermoelectric semiconductors through defect engineering focusing on the charge carrier and phonon behaviors. First, we clarify and summarize each type of defects in thermoelectric semiconductors. Then, we review the recent achievements in thermoelectric properties by applying defect engineering when introducing defects into semiconductor lattices. This paper ends with a brief discussion on the challenges and future directions of defect engineering in the thermoelectric field.

The Effects of Electronic Commerce on the Freight Transport Industry

  • Yang, Jung-Ho
    • 무역상무연구
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    • 제40권
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    • pp.147-167
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    • 2008
  • This paper investigates changing business transaction under the e-commerce environment and their implications on freight transport industry with some case studies. It shows that an efficient and reliable delivery system is essential for e-commerce as business industries are faced with the stricter and more diversified demands of customer. In addition, many aspects of business practices such as small batch, customized production and just-in-time distribution in the e-commerce environment, in turn, bring about a number of changes in the volume and service patterns of freight transport. E-commerce requires longer transport distances and often higher delivery frequencies. It also entails to a certain extent a modal shift towards truck and air freight transport modes. On the one hand, the logistical requirements of e-commerce goods may stimulate greater complexity in existing supply chain management, causing higher costs. However it is true that the increased visibility of goods through more efficient information flow allows more efficient and effective transport management in the logistics system.

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