• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.15 no.10 s.89
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• pp.1005-1010
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• 2004

An analysis method of slot-coupled microstripline to waveguide transition is presented to developed a simple but accurate equivalent circuit model. The equivalent circuit consists of an ideal transformer, microstrip open stub, and admittance elements looking into a waveguide and a half space of feed side from a slot center. The related circuit element values are calculated by applying the reciprocity theorem, the Fourier transform and series representation, the complex power concept, and the spectral-domain immittance approach. The computed scattering parameters are compared with the measured, and good agreement validates the simplicity and accuracy of the proposed equivalent circuit model.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.9
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• pp.576-580
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• 2016

Single-layered transition metal dichalcogenides (TMDs) exhibit more interesting physical properties than those of bulk TMDs owing to the indirect to direct bandgap transition occurring due to quantum confinement. In this research, we demonstrate that layer-by-layer laser etching of molybdenum diselenide ($MoSe_2$) flakes could be controlled by varying the parameters employed in laser irradiation (time, intensity, interval, etc.). We observed a dramatic increase in the photoluminescence (PL) intensity (1.54 eV peak) after etching the samples, indicating that the removal of several layers of $MoSe_2$ led to a change from indirect to direct bandgap. The laser-etched $MoSe_2$ exhibited the single $MoSe_2$ Raman vibration modes at ${\sim}239.4cm^{-1}$ and ${\sim}295cm^{-1}$, associated to out-of-plane $A_{1g}$ and in-plane ${E^1}_{2g}$ Raman modes, respectively. These results indicate that controlling the number of $MoSe_2$ layers by laser etching method could be employed for optimizing the performance of nano-electronic devices.

• 한국전기화학회:학술대회논문집
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• 2003.11a
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• pp.141-151
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• 2003

The electrochemical activity of the olivine type $LiMPO_4$ (M=transition metals) cathodes strongly depends on various factors, e.g., the transition metal element M, perturbative doping of the supervalent cations into Li site, composite formation with conductive additives, state of charge/discharge, and particle size and its geometries, etc. This is, therefore, an important issue of interdisciplinary between electrochemistry and solid state science towards practical applications. In order to shed light on this interesting but complicated issue with the transport properties and crystallographic aspects, systematic discussion will be made with the review of our recent publications; (1) first principle derivation of the electronic structures, (2) crystallographic mapping of the selected solid solutions, (3) quantitative elucidation of the electron-lattice interaction, (4) spectroscopic detection of the local environment with Mossbauer and EXAFS, (5) synthetic optimization of the electrode composite, and (6) electrochemical evaluation of the reaction kinetics, particularly on M = Fe, Mn.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.210-213
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• 2004

The phase transition between amorphous and crystalline states in chalcogenide semiconductor films can controlled by electric pulses or pulsed laser beam; hence some chalcogenide semiconductor films can be applied to electrically write/erase nonvolatile memory devices, where the low conductive amorphous state and the high conductive crystalline state are assigned to binary states. Memory switching in chalcogenides is mostly a thermal process, which involves phase transformation from amorphous to crystalline state. The nonvolatile memory cells are composed of a simple sandwich (metal/chalcogenide/metal). It was formed that the threshold voltage depends on thickness, electrode distance, annealing time and temperature, respectively.

• Electrical & Electronic Materials
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• v.9 no.4
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• pp.404-409
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• 1996

The structural and electric properties of $Y_{1-x}$YbF$_{x}$Ba$_{2}$Cu$_{3}$O$_{7-y}$(x=0.0, 0.1, 0.2, 0.3, 0.4, 0.5 and 0.6) have been investigated by using XRD(X-ray diffraction), TMA(thennomechanical analysis), NMR(nuclear magnetic resonance) analysis and four probe method. $Y_{1-x}$YbF$_{x}$Ba$_{2}$Cu$_{3}$O$_{7-y}$ samples were prepared by conventional solid-state reaction method using $Y_{2}$O$_{3}$, BaCO$_{3}$, CuO and YbF$_{3}$ power. TMA and high temperature XRD results shows that orthorhombic to tetragonal phase transition occurs in the unfluorinated 1-2-3 sample while the phase change is not observed in the fluorinated 1-2-3 samples. Superconducting transition temperature(T$_{c}$) increases with increasing YbF$_{3}$ content ; T$_{c}$, of the sample reaching maximum of 102K for x=0.3, and then decreases with further increasing YbF$_{3}$ content. The structural analysis and T$_{c}$ results shows that the fluorine doping stabilize the orthorhombic phase, together with the increase in T$_{c}$.}$ c/.TEX> c/.

• Electrical & Electronic Materials
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• v.8 no.2
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• pp.190-195
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• 1995

Temperature dependences of the dielectric constant K(T), remanent polarization $P_{r}$, (T), effective birefringence overbar .DELTA.n(T), transmitted light intensity and quadratic electro optic coefficient R(T) of the two-stage sintered xBa(L $a_{1}$2/N $b_{1}$2/) $O_{3}$-(1-x)Pb(Z $r_{y}$ $Ti_{1-y}$) $O_{3}$(x=0.085, 0.09, 0.40.leq.y.leq.0.70) ceramics were investigated. Increasing the PbZr $O_{3}$ contents, the crystal structure of a specimen was changed from a tetragonal phase to a rhombohedral and cubic phase, and the phase transition was showed a diffuse phase transition(DPT) characteristics. In the compositions which located on the PE-FE phase boundary, the discrepancy was observed between the Curie temperature and temperature which a microscopic polarization and effective birefringence were disappeared.red.d.

• Progress in Superconductivity
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• v.14 no.1
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• pp.34-38
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• 2012

The effect of graphene inclusion in the ex-situ $MgB_2$ was analyzed with the help of resistivity behavior and critical current density studies. Amount of graphene was systematically varied from 0% for pristine sample to 3% by the weight of $MgB_2$. Graphene that is considered as a good source of carbon was found to be intact without any significant carbon doping in $MgB_2$ structure as reveled by XRD measurements. There was no signature of graphene inclusion as far as the superconducting transition is concerned which remained same at 39 K for all the samples. The transition width being sensitive to defect doping remained more or less about 2 K for all the samples showing no variation due to doping. Although there was no change in the superconducting transition or transition width, the graphene doped sample showed noticeable decrease in the overall resistivity behavior with respect to decrease in temperature. The graphene inclusion acted as effective pinning centers which have enhanced the upper critical field of these samples.

• Journal of the Microelectronics and Packaging Society
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• v.29 no.2
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• pp.53-58
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• 2022

One of the most promising emerging technologies for the next generation of nonvolatile memory devices based on resistive switching (RS) is the resistive random-access memory mechanism. To date, RS effects have been found in many transition metal oxides. However, no clear evidence has been reported that ZnO-based resistive transition mechanisms could be associated with strong correlation effects. Here, we investigated N, F-co-doped ZnO (NFZO), which shows bipolar RS. Conducting micro spectroscopic studies on exposed surfaces helps tracking the behavioral change in systematic electronic structural changes during low and high resistance condition of the material. The significant difference in electronic conductivity was observed to attribute to the field-induced oxygen vacancy that causes the metal-insulator Mott transition on the surface. In this study, we showed the strong correlation effects that can be explored and incorporated in the field of multifunctional oxide electrons devices.

• KIEE International Transactions on Electrophysics and Applications
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• v.4C no.2
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• pp.51-54
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• 2004

In this paper, the thermal and mechanical properties of elastic epoxy for the application of high voltage products were investigated. Glass transition temperature (Tg) of elastic epoxies cannot be found from room temperature to 20$0^{\circ}C$ by DSC (Differential Scanning Calorimetry). Weight reduction occurred at 285$^{\circ}C$ and 451$^{\circ}C$ according to a thermogravimeter. The first temperature was affected by addictives and the second by epoxies characteristic. Maximum tensile strain showed 28.3kgf/$\textrm{cm}^2$/$\textrm{cm}^2$ at 20% of mechanical stress in addictives 35 (phr). The SEM (Scanning electron microscope) micrograph of the fracture surface observed void and tearing of elastic epoxy at addictives 35 (phr). On the other side, the SEM micrograph of the rigid epoxy showed a broken trace.

• Proceedings of the IEEK Conference
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• 2004.06a
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• pp.59-62
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• 2004

The performance of turbo code is improved by updating extrinsic information. The bit patterns are categorized by the transition characteristics of extrinsic information in this paper. And the distribution of these patterns is surveyed according to signal-to-noise ratio. Based on the results, the dominant error pattern is determined at high signal-to-noise ratio range. Thus, it is expected to improve the error performance in the error floor region by correcting the dominant error pattern which is found in this paper.